EP1509975A4 - Laser dbr monomode avec section de dephasage amelioree, et son procede de fabrication - Google Patents
Laser dbr monomode avec section de dephasage amelioree, et son procede de fabricationInfo
- Publication number
- EP1509975A4 EP1509975A4 EP03731472A EP03731472A EP1509975A4 EP 1509975 A4 EP1509975 A4 EP 1509975A4 EP 03731472 A EP03731472 A EP 03731472A EP 03731472 A EP03731472 A EP 03731472A EP 1509975 A4 EP1509975 A4 EP 1509975A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- shift section
- dbr laser
- improved phase
- fabricating same
- mode dbr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
- H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US159347 | 1993-11-30 | ||
US10/159,361 US6638773B1 (en) | 2002-05-31 | 2002-05-31 | Method for fabricating single-mode DBR laser with improved yield |
US10/159,347 US6608855B1 (en) | 2002-05-31 | 2002-05-31 | Single-mode DBR laser with improved phase-shift section |
US159361 | 2002-05-31 | ||
PCT/US2003/017166 WO2003103107A1 (fr) | 2002-05-31 | 2003-05-29 | Laser dbr monomode avec section de dephasage amelioree, et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1509975A1 EP1509975A1 (fr) | 2005-03-02 |
EP1509975A4 true EP1509975A4 (fr) | 2005-06-15 |
Family
ID=29714712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03731472A Withdrawn EP1509975A4 (fr) | 2002-05-31 | 2003-05-29 | Laser dbr monomode avec section de dephasage amelioree, et son procede de fabrication |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1509975A4 (fr) |
AU (1) | AU2003240967A1 (fr) |
WO (1) | WO2003103107A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018070432A1 (fr) | 2016-10-12 | 2018-04-19 | 古河電気工業株式会社 | Élément laser à semi-conducteur |
CN112993751B (zh) * | 2021-01-28 | 2022-08-19 | 湖北光安伦芯片有限公司 | 一种纳米柱vcsel光源结构及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4796273A (en) * | 1985-03-20 | 1989-01-03 | Nec Corporation | Distributed feedback semiconductor laser |
US4847857A (en) * | 1987-07-08 | 1989-07-11 | Mitsubishi Denki Kabushiki Kaisha | Single wavelength semiconductor laser |
EP0559192A2 (fr) * | 1992-03-06 | 1993-09-08 | Nippon Telegraph And Telephone Corporation | Réflecteur distribué et laser à semi-conducteur à longeur d'onde accordable |
US6088377A (en) * | 1997-01-27 | 2000-07-11 | Fujitsu Limited | Optical semiconductor device having a diffraction grating and fabrication process thereof |
US20020181516A1 (en) * | 2001-06-04 | 2002-12-05 | Kamath Kishore K. | Active phase tuning of DBR lasers |
US20030147441A1 (en) * | 2002-02-05 | 2003-08-07 | Akulova Yuliya Anatolyevna | Laser with a resonant optical reflector |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3714430B2 (ja) * | 1996-04-15 | 2005-11-09 | シャープ株式会社 | 分布帰還型半導体レーザ装置 |
-
2003
- 2003-05-29 WO PCT/US2003/017166 patent/WO2003103107A1/fr not_active Application Discontinuation
- 2003-05-29 EP EP03731472A patent/EP1509975A4/fr not_active Withdrawn
- 2003-05-29 AU AU2003240967A patent/AU2003240967A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4796273A (en) * | 1985-03-20 | 1989-01-03 | Nec Corporation | Distributed feedback semiconductor laser |
US4847857A (en) * | 1987-07-08 | 1989-07-11 | Mitsubishi Denki Kabushiki Kaisha | Single wavelength semiconductor laser |
EP0559192A2 (fr) * | 1992-03-06 | 1993-09-08 | Nippon Telegraph And Telephone Corporation | Réflecteur distribué et laser à semi-conducteur à longeur d'onde accordable |
US6088377A (en) * | 1997-01-27 | 2000-07-11 | Fujitsu Limited | Optical semiconductor device having a diffraction grating and fabrication process thereof |
US20020181516A1 (en) * | 2001-06-04 | 2002-12-05 | Kamath Kishore K. | Active phase tuning of DBR lasers |
US20030147441A1 (en) * | 2002-02-05 | 2003-08-07 | Akulova Yuliya Anatolyevna | Laser with a resonant optical reflector |
Non-Patent Citations (1)
Title |
---|
See also references of WO03103107A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP1509975A1 (fr) | 2005-03-02 |
AU2003240967A1 (en) | 2003-12-19 |
WO2003103107A1 (fr) | 2003-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20040325 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: ZHENG, JUN Inventor name: ANSELM, KLAUS, ALEXANDER Inventor name: HWANG, WEN-YEN |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20050502 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: 7H 01S 5/0625 B Ipc: 7H 01S 5/00 B Ipc: 7H 01S 3/08 A |
|
17Q | First examination report despatched |
Effective date: 20050615 |
|
DAX | Request for extension of the european patent (deleted) | ||
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20091201 |