EP1489193A1 - Silber-legierung und deren Verwendung - Google Patents
Silber-legierung und deren Verwendung Download PDFInfo
- Publication number
- EP1489193A1 EP1489193A1 EP20040011328 EP04011328A EP1489193A1 EP 1489193 A1 EP1489193 A1 EP 1489193A1 EP 20040011328 EP20040011328 EP 20040011328 EP 04011328 A EP04011328 A EP 04011328A EP 1489193 A1 EP1489193 A1 EP 1489193A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- silver
- alloy
- weight
- tin
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001316 Ag alloy Inorganic materials 0.000 title 1
- 239000000956 alloy Substances 0.000 claims abstract description 41
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 40
- 229910052709 silver Inorganic materials 0.000 claims abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000004332 silver Substances 0.000 claims abstract description 34
- 229910052718 tin Inorganic materials 0.000 claims abstract description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052738 indium Inorganic materials 0.000 claims abstract description 17
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 40
- 239000011135 tin Substances 0.000 description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000002341 toxic gas Substances 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 229910017750 AgSn Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- ZSUXOVNWDZTCFN-UHFFFAOYSA-L tin(ii) bromide Chemical compound Br[Sn]Br ZSUXOVNWDZTCFN-UHFFFAOYSA-L 0.000 description 2
- JTDNNCYXCFHBGG-UHFFFAOYSA-L tin(ii) iodide Chemical compound I[Sn]I JTDNNCYXCFHBGG-UHFFFAOYSA-L 0.000 description 2
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 241000093804 Berzelia galpinii Species 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910000629 Rh alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- PNOXNTGLSKTMQO-UHFFFAOYSA-L diacetyloxytin Chemical compound CC(=O)O[Sn]OC(C)=O PNOXNTGLSKTMQO-UHFFFAOYSA-L 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 239000001119 stannous chloride Substances 0.000 description 1
- 229940108184 stannous iodide Drugs 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- OBBXFSIWZVFYJR-UHFFFAOYSA-L tin(2+);sulfate Chemical compound [Sn+2].[O-]S([O-])(=O)=O OBBXFSIWZVFYJR-UHFFFAOYSA-L 0.000 description 1
- 229910000375 tin(II) sulfate Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Definitions
- the invention relates to a silver-based alloy and its use.
- EP 1 028 421 A2 discloses a multilayer optical disk having at least two Layers for data recording, with a transparent layer as well as a translucent Protective layer are covered. At least one of the two layers for Data recording at least one element of a group, among many others also the Elements called silver, gold, tin, aluminum, copper, ruthenium, rhodium and indium.
- WO 99/67084 discloses metal alloys for reflective or semi-reflective layers an optical storage medium.
- silver-palladium-copper alloys are used as metal alloys.
- silver-palladium-rhodium alloys are used as metal alloys.
- EP 1 103 758 A2 discloses a reflector layer of a silver-palladium-copper alloy for a lamp, wherein the palladium content in the range of 0.5 to 3 wt .-% and the Copper content is in the range of 0.1 to 3 wt .-%. Furthermore, it is disclosed a sputtering target or to provide a vaporizable silver-palladium-copper alloy material.
- EP 1 069 194 A1 discloses a metal alloy for electronic parts with 0.1 to 3.0 Wt .-% palladium, 0.1 to 3.0 wt .-% copper and the rest silver. Furthermore, it discloses the metal alloy to use for a sputtering target.
- DE 41 35 801 C2 discloses a reflective layer of silver on a glass substrate, which on the side facing away from the glass substrate for corrosion protection with an aqueous solution of a chloride, bromide, iodide, sulfate or acetate of at least Al 3+ , Tl 3+ , V 2 + , V 3+ , Cr 2+ , Fe 2+ , In 2+ and Cu 2+ .
- Sn (II) ions may furthermore be contained in the aqueous solution.
- the use of such a coated glass substrate takes place, inter alia, as a mirror.
- DE 41 35 800 C2 discloses a reflective layer of silver on a glass substrate, which on the side facing away from the glass substrate for corrosion protection with a freshly prepared, acidified, aqueous solution of a stannous chloride, stannous bromide, stannous iodide, Tin (II) sulfate or tin (II) acetate is treated.
- the reflection layer of silver shows this treatment on its glass substrate side facing away from a surface layer with a thickness in the range of 2 to 3nm, containing at least an increased number of tin atoms in the range of 5 to 35 atoms of Sn per 100 atoms of metal, accounting for greater than 5.5 Wt .-% Sn corresponds, has.
- the use of such a coated glass substrate takes place among other things as a mirror.
- WO 00/69975 discloses a method of producing metal bumps with a dielectric coating.
- the material for the metal bauble or a reflective metal layer from the group Al, Cu, Ag, Au, Pt, Pd, Ni, Co, Sn, Rh, Nb, Cr, their combinations or their alloys selected.
- the reflective metal layer is covered on both sides with a dielectric Layer covered and finally crushed into flake particles.
- the object is achieved by making the alloy 0.01 to 5.0 wt .-% indium and / or tin and / or antimony and / or bismuth and the rest of silver.
- an alloy is preferred 0.5 to 3.0 wt .-% indium and / or tin and / or antimony and / or bismuth and the rest silver.
- a first comparison layer of pure silver (Ag), a second comparative layer with 98% by weight of silver, 1% by weight of palladium and 1% by weight of copper (AgPd1Cu1) and the following layers of an alloy according to the invention were heated at a temperature of 25 ° C exposed to a pollutant gas with a relative humidity of 75% and a H 2 S - content of 1 ppm: 99.5% by weight of silver, 0.5% by weight of indium (AgIn 0.5) 99.0% by weight of silver, 1.0% by weight of indium (Agln1) 99.0% by weight of silver, 0.5% by weight of tin, 0.5% by weight of indium (AgSn 0.5 In 0.5) 99.5% by weight of silver, 0.5% by weight of tin (AgSn 0.5) 99.0% by weight of silver, 1.0% by weight of tin (AgSn1) 97.0% by weight of silver, 3.0% by weight of tin (AgSn3)
- the reflection of the layers was added 560nm before the noxious gas test and after a noxious gas test duration of 3h and 6h (see Fig. 1).
- a standardization of the measurement results of each layer was carried out the value of their reflection before the climatic test.
- the reflector layers of the alloys of the invention from the known layers Ag or AgPd1 Cu1 are clearly superior in weatherability.
- the layers of AgSn1 and the AgSn0.5In0.5 were found.
- the alloys according to the invention for the formation of reflector layers is ideal.
- the alloys AgIn0.5 and AgSn0.5 have as reflector layers opposite known materials for reflector layers such as AgPd1Cu1 the advantage a higher reflectivity.
- the reflection (in%) of the comparative layers from Ag (curve A) and AgPd1Cu1 (curve D) to the layers of the alloys according to the invention AgIn0.5 (curve B) and AgSn0.5 (curve C) at wavelengths in the visible range Spectrum faced.
- the improved reflection of the layers of the invention Alloys compared to the comparative layer of AgPd1Cu1 (curve D) to detect.
- the use as a reflector layer for the reflection of visible daylight is preferred.
- the reflector layer is particularly suitable for the reflection of visible Daylight in reflective or transflective displays. Because in reflective displays no additional electrical backlight is provided, here is a particularly high reflectivity the reflector layer is required, which is a layer of the invention Alloy highly.
- an aftertreatment of the reflector layer by example, chemical, mechanical or coating processes omitted can.
- alloys according to the invention for forming a Sputtering material for sputtering proven.
- PVD physical vapor deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Optical Elements Other Than Lenses (AREA)
- Powder Metallurgy (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
0.01 bis 5.0 Gew.-% Indium und/oder Zinn und/oder Antimon und/oder Wismut und Rest Silber besteht.
0.5 bis 3.0 Gew.-% Indium und/oder Zinn und/oder Antimon und/oder Wismut und Rest Silber besteht.
0.5 bis 1.0 Gew.-% Indium und/oder Zinn und/oder Antimon und/oder Wismut und Rest Silber, insbesondere aus
0.5 Gew.-% Zinn und Rest Silber oder aus
1.0 Gew.-% Zinn und Rest Silber oder aus
0.5 Gew.-% Indium und Rest Silber oder aus
1.0 Gew.-% Indium und Rest Silber oder aus
0.5 Gew.-% Zinn, 0.5 Gew.-% Indium und Rest Silber.
99,5 Gew.-% Silber, 0,5 Gew.-% Indium (AgIn0,5)
99,0 Gew.-% Silber, 1,0 Gew.-% Indium (Agln1)
99,0 Gew.-% Silber, 0,5 Gew.-% Zinn, 0,5 Gew.-% Indium (AgSn0,5In0,5)
99,5 Gew.-% Silber, 0,5 Gew.-% Zinn (AgSn0,5)
99,0 Gew.-% Silber, 1,0 Gew.-% Zinn (AgSn1)
97,0 Gew.-% Silber, 3,0 Gew.-% Zinn (AgSn3)
Claims (14)
- Legierung, die auf Silber basiert, dadurch gekennzeichnet, dass die Legierung aus 0.01 bis 5.0 Gew.-% Indium und/oder Zinn und/oder Antimon und/oder Wismut und Rest Silber besteht.
- Legierung nach Anspruch 1, dadurch gekennzeichnet, dass die Legierung aus 0.5 bis 3.0 Gew.-% Indium und/oder Zinn und/oder Antimon und/oder Wismut und Rest Silber besteht.
- Legierung nach Anspruch 2, dadurch gekennzeichnet, dass die Legierung aus 0.5 bis 1.0 Gew.-% Indium und/oder Zinn und/oder Antimon und/oder Wismut und Rest Silber besteht.
- Legierung nach Anspruch 3, dadurch gekennzeichnet, dass die Legierung aus 0.5 Gew.-% Zinn und Rest Silber besteht.
- Legierung nach Anspruch 3, dadurch gekennzeichnet, dass die Legierung aus 1.0 Gew.-% Zinn und Rest Silber besteht.
- Legierung nach Anspruch 3, dadurch gekennzeichnet, dass die Legierung aus 0.5 Gew.-% Indium und Rest Silber besteht.
- Legierung nach Anspruch 3, dadurch gekennzeichnet, dass die Legierung aus 1.0 Gew.-% Indium und Rest Silber besteht.
- Legierung nach Anspruch 3, dadurch gekennzeichnet, dass die Legierung aus
0.5 Gew.-% Zinn,
0.5 Gew.-% Indium und
Rest Silber besteht. - Verwendung einer Legierung nach einem der Ansprüche 1 bis 8 zur Bildung einer Reflektorschicht.
- Verwendung nach Anspruch 9, dadurch gekennzeichnet, dass die Reflektorschicht zur Reflexion von sichtbarem Tageslicht verwendet wird.
- Verwendung nach Anspruch 10, dadurch gekennzeichnet, dass die Reflektorschicht zur Reflexion von sichtbarem Tageslicht in reflektiven oder transflektiven Displays verwendet wird.
- Verwendung nach Anspruch 9, dadurch gekennzeichnet, dass die Reflektorschicht für optische Speichermedien verwendet wird.
- Verwendung einer Legierung nach einem der Ansprüche 1 bis 8 zur Bildung eines Zerstäubungsmaterials für Kathodenzerstäubungsanlagen.
- Verwendung einer Legierung nach einem der Ansprüche 1 bis 8 zur Bildung eines verdampfbaren Materials für Aufdampfanlagen.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10327336 | 2003-06-16 | ||
DE2003127336 DE10327336A1 (de) | 2003-06-16 | 2003-06-16 | Legierung und deren Verwendung |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1489193A1 true EP1489193A1 (de) | 2004-12-22 |
EP1489193B1 EP1489193B1 (de) | 2007-06-27 |
Family
ID=33394849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20040011328 Expired - Lifetime EP1489193B1 (de) | 2003-06-16 | 2004-05-13 | Silber-legierung und deren Verwendung |
Country Status (6)
Country | Link |
---|---|
US (2) | US20040253137A1 (de) |
EP (1) | EP1489193B1 (de) |
JP (1) | JP2005008983A (de) |
KR (1) | KR20040108585A (de) |
DE (2) | DE10327336A1 (de) |
TW (1) | TWI316092B (de) |
Cited By (5)
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---|---|---|---|---|
WO2012107524A1 (en) | 2011-02-09 | 2012-08-16 | Impact Coatings Ab | Material for providing an electrically conducting contact layer, a contact element with such layer, method for providing the contact element, and uses of the material |
EP2647737A1 (de) | 2012-04-04 | 2013-10-09 | Heraeus Materials Technology GmbH & Co. KG | Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben |
CN106414793A (zh) * | 2015-02-27 | 2017-02-15 | 三菱综合材料株式会社 | Ag合金溅射靶及Ag合金膜的制造方法 |
EP3168325A1 (de) | 2015-11-10 | 2017-05-17 | Heraeus Deutschland GmbH & Co. KG | Sputtertarget auf der basis einer silberlegierung |
EP2937444B1 (de) | 2012-12-21 | 2017-08-16 | Mitsubishi Materials Corporation | Ag-in-legierungs-sputtertarget |
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US7314657B2 (en) * | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
US6852384B2 (en) * | 1998-06-22 | 2005-02-08 | Han H. Nee | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
US7045187B2 (en) * | 1998-06-22 | 2006-05-16 | Nee Han H | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
US7384677B2 (en) * | 1998-06-22 | 2008-06-10 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
US7314659B2 (en) * | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
US7374805B2 (en) * | 2000-07-21 | 2008-05-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
US7316837B2 (en) * | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
TWI368819B (en) * | 2003-04-18 | 2012-07-21 | Target Technology Co Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
TW200514070A (en) * | 2003-09-03 | 2005-04-16 | Williams Advanced Materials Inc | Silver alloys for optical data storage and optical media containing same |
TWI325134B (en) * | 2004-04-21 | 2010-05-21 | Kobe Steel Ltd | Semi-reflective film and reflective film for optical information recording medium, optical information recording medium, and sputtering target |
JP2006294195A (ja) * | 2005-04-14 | 2006-10-26 | Kobe Steel Ltd | 光情報記録用Ag合金反射膜、光情報記録媒体および光情報記録用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
US20070014963A1 (en) * | 2005-07-12 | 2007-01-18 | Nee Han H | Metal alloys for the reflective layer of an optical storage medium |
KR20140015432A (ko) * | 2011-04-06 | 2014-02-06 | 미쓰비시 마테리알 가부시키가이샤 | 도전성 막 형성용 은 합금 스퍼터링 타깃 및 그 제조 방법 |
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JP2013077547A (ja) * | 2011-09-15 | 2013-04-25 | Mitsubishi Materials Corp | 導電性膜及びその製造方法並びに導電性膜形成用銀合金スパッタリングターゲット及びその製造方法 |
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CN105324510B (zh) * | 2013-06-26 | 2018-12-14 | 株式会社神户制钢所 | 反射电极用或布线电极用Ag合金膜、反射电极或布线电极、和Ag合金溅射靶 |
TWI535865B (zh) | 2015-06-25 | 2016-06-01 | 王仁宏 | 一種銀合金材料及其製作方法 |
JP2019035100A (ja) * | 2016-01-06 | 2019-03-07 | コニカミノルタ株式会社 | 反射膜の製造方法 |
JP2018176493A (ja) * | 2017-04-07 | 2018-11-15 | 三菱マテリアル株式会社 | 積層膜、及び、Ag合金スパッタリングターゲット |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1628296B1 (de) * | 1997-11-17 | 2013-03-06 | Mitsubishi Kagaku Media Co., Ltd. | Optisches Informationsaufzeichnungsmedium |
US6852384B2 (en) * | 1998-06-22 | 2005-02-08 | Han H. Nee | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
JP2004002929A (ja) * | 2001-08-03 | 2004-01-08 | Furuya Kinzoku:Kk | 銀合金、スパッタリングターゲット、反射型lcd用反射板、反射配線電極、薄膜、その製造方法、光学記録媒体、電磁波遮蔽体、電子部品用金属材料、配線材料、電子部品、電子機器、金属膜の加工方法、電子光学部品、積層体及び建材ガラス |
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2003
- 2003-06-16 DE DE2003127336 patent/DE10327336A1/de not_active Withdrawn
-
2004
- 2004-05-13 DE DE200450004173 patent/DE502004004173D1/de not_active Expired - Lifetime
- 2004-05-13 EP EP20040011328 patent/EP1489193B1/de not_active Expired - Lifetime
- 2004-05-21 TW TW93114542A patent/TWI316092B/zh active
- 2004-06-03 KR KR1020040040214A patent/KR20040108585A/ko not_active Application Discontinuation
- 2004-06-14 US US10/866,945 patent/US20040253137A1/en not_active Abandoned
- 2004-06-15 JP JP2004177245A patent/JP2005008983A/ja active Pending
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2006
- 2006-11-07 US US11/557,265 patent/US20070062810A1/en not_active Abandoned
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US3874941A (en) * | 1973-03-22 | 1975-04-01 | Chugai Electric Ind Co Ltd | Silver-metal oxide contact materials |
US6139652A (en) * | 1997-01-23 | 2000-10-31 | Stern-Leach | Tarnish-resistant hardenable fine silver alloys |
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Cited By (7)
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WO2012107524A1 (en) | 2011-02-09 | 2012-08-16 | Impact Coatings Ab | Material for providing an electrically conducting contact layer, a contact element with such layer, method for providing the contact element, and uses of the material |
EP2647737A1 (de) | 2012-04-04 | 2013-10-09 | Heraeus Materials Technology GmbH & Co. KG | Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben |
EP2937444B1 (de) | 2012-12-21 | 2017-08-16 | Mitsubishi Materials Corporation | Ag-in-legierungs-sputtertarget |
CN106414793A (zh) * | 2015-02-27 | 2017-02-15 | 三菱综合材料株式会社 | Ag合金溅射靶及Ag合金膜的制造方法 |
CN106414793B (zh) * | 2015-02-27 | 2018-05-18 | 三菱综合材料株式会社 | Ag合金溅射靶及Ag合金膜的制造方法 |
EP3168325A1 (de) | 2015-11-10 | 2017-05-17 | Heraeus Deutschland GmbH & Co. KG | Sputtertarget auf der basis einer silberlegierung |
WO2017080968A1 (de) | 2015-11-10 | 2017-05-18 | Materion Advanced Materials Germany Gmbh | Sputtertarget auf der basis einer silberlegierung |
Also Published As
Publication number | Publication date |
---|---|
DE502004004173D1 (de) | 2007-08-09 |
TWI316092B (en) | 2009-10-21 |
JP2005008983A (ja) | 2005-01-13 |
KR20040108585A (ko) | 2004-12-24 |
EP1489193B1 (de) | 2007-06-27 |
US20070062810A1 (en) | 2007-03-22 |
DE10327336A1 (de) | 2005-01-27 |
US20040253137A1 (en) | 2004-12-16 |
TW200508403A (en) | 2005-03-01 |
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