EP1484947B1 - Circuit interrupteur pour commander une lampe - Google Patents

Circuit interrupteur pour commander une lampe Download PDF

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Publication number
EP1484947B1
EP1484947B1 EP04009454A EP04009454A EP1484947B1 EP 1484947 B1 EP1484947 B1 EP 1484947B1 EP 04009454 A EP04009454 A EP 04009454A EP 04009454 A EP04009454 A EP 04009454A EP 1484947 B1 EP1484947 B1 EP 1484947B1
Authority
EP
European Patent Office
Prior art keywords
bipolar transistor
drive circuit
effect transistor
circuit according
reference electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
EP04009454A
Other languages
German (de)
English (en)
Other versions
EP1484947A3 (fr
EP1484947A2 (fr
Inventor
Bernd Rudolph
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram GmbH
Original Assignee
Osram GmbH
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Filing date
Publication date
Application filed by Osram GmbH filed Critical Osram GmbH
Publication of EP1484947A2 publication Critical patent/EP1484947A2/fr
Publication of EP1484947A3 publication Critical patent/EP1484947A3/fr
Application granted granted Critical
Publication of EP1484947B1 publication Critical patent/EP1484947B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
    • H05B41/14—Circuit arrangements
    • H05B41/26—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc
    • H05B41/28—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters
    • H05B41/282—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
    • H05B41/14—Circuit arrangements
    • H05B41/26—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc
    • H05B41/28—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters
    • H05B41/282—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices
    • H05B41/2825—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices by means of a bridge converter in the final stage

Definitions

  • the present invention relates to a drive circuit for operating at least one lamp in an associated load circuit in which the terminals for the at least one lamp are arranged, with two switches in half-bridge arrangement.
  • FIG. 1 Such a drive circuit known from the prior art is shown schematically in FIG. 1 shown.
  • the so-called intermediate circuit voltage U zw is applied .
  • This is a DC voltage, which is usually generated by the skilled person circuits from the mains voltage.
  • Two switches S1, S2 are arranged in series in a half-bridge arrangement and are driven via a respective input circuit E1, E2, not shown.
  • the connection point of the two switches is connected via a throttle L with the lamp La, which is traversed by the lamp current I L in operation.
  • the two coupling capacitors C K1 , C K2 close the circuit.
  • Alternative circuit structures will be apparent to those skilled in the art but will not be described in more detail below as they are not relevant to the practice of the invention.
  • the switches S1, S2 When used in the so-called medium voltage range, the switches S1, S2 must be designed to switch voltages between 400 and 1000 volts.
  • the switching frequency is in the order of 40 to 50 kHz.
  • the duty cycle of in FIG. 1 shown circuit is 50 percent.
  • the network power to be switched is more than 100 watts.
  • MOSFETs Metal Oxide Semiconductor Field Effect Transistor
  • IGBTs Insulated Gate Bipolar Transistors
  • MOSFETs Since the field effect transistor increases the forward losses with the square of the current, and the chip area has to be correlated with the forward losses, MOSFETs become relatively expensive at currents above one ampere and average voltages of approximately 600 volts. In the IGBTs, however, there are large passage losses. In pure bipolar transistors where the forward losses are directly proportional to the current, components designed for such constraints are less expensive because they require less chip area, but their poor dynamic switching performance has a negative impact. Since the collector current can not be switched off fast enough, high switching losses result from the overlaps with the collector-emitter voltage over time.
  • the printing pen EP 0 261 018 A1 shows a drive circuit according to the preamble of claim 1.
  • the present invention is therefore the object of developing a generic drive circuit such that it has low forward losses at average currents of about 1 to 10 amps, at the same time low cost and given controllability from microcontrollers or integrated control modules.
  • the present invention is based on the finding that a fast switching can be achieved when a low-voltage MOSFET is used in combination with a bipolar transistor.
  • the MOSFET therefore only has to apply the small control voltage for the bipolar transistor and can therefore be designed to be small and cheap.
  • the bipolar transistor whose power loss is linked only linearly with the current flowing through it, can be dimensioned at low cost for large currents.
  • the second finding underlying the invention is that such a drive circuit can be started in a simple manner if a part of the energy flowing in the load circuit is transmitted to the input circuit of the respective switch.
  • a bipolar transistor is essentially a current-controlled component, a corresponding control current must be provided to it at the base.
  • a primary winding of a transformer is formed in the load circuit, the secondary windings are arranged in the input circuit of each bipolar transistor and thus supply the base of the bipolar transistor with power.
  • the bipolar transistor is overdriven as a factor of 4. This results in low passage losses. While it would not be possible to drive the bipolar transistor as a result of the large required control currents from an integrated circuit, this is very well possible with the MOSFET as an essentially voltage-controlled component.
  • the duty cycle of the two switches of the half-bridge is substantially 50 percent, so as to ensure that the transmitter does not saturate because it is being reversed by the other transistor current.
  • a preferred embodiment of the present invention is characterized in that a diode is arranged such that in the case of an npn bipolar transistor, a flow of a positive base current through the secondary winding, in the case of a pnp bipolar transistor prevents a flow of negative base current through the secondary winding , This is important because a flow of the base current through the secondary winding would prevent the formation of a voltage between the control electrode of the bipolar transistor and the reference electrode of the field effect transistor and thus the formation of a sufficiently high base-emitter voltage.
  • At least one diode or a Zener diode between the potential of the control electrode of the bipolar transistor and the potential of the reference electrode of the field effect transistor may be arranged. This is at least the voltage at the pn junction of the diode as the base-emitter voltage at the pn junction of the bipolar transistor. Opening of the bipolar transistor can thus be ensured. The same applies when using a Zener diode.
  • a series connection of an ohmic resistor and a capacitor is furthermore preferably arranged.
  • the start of the drive circuit according to the invention can be implemented cost-effectively in a simple manner.
  • the control electrode of the field effect transistor is connected to an integrated driver circuit.
  • a field effect transistor is a voltage controlled element that can be controlled from an integrated circuit due to the low demand for control current.
  • the diode or Zener diode which is arranged parallel to the control electrode of the bipolar transistor and the reference electrode of the field effect transistor between the potential of the control electrode of the bipolar transistor and the potential of the reference electrode of the field effect transistor is preferably dimensioned as a voltage of at least 1 volt, preferably about 2 volts, drops.
  • the reference electrode of the field effect transistor of each switch is preferably connected to a first reference potential, while the control electrode of the bipolar transistor of each switch is connected via a high-impedance resistor to a second reference potential.
  • This resistor is used to supply charge carriers to the base of the bipolar transistor, as long as the secondary winding of the transformer still introduces no charge carriers in the input circuit, especially at start.
  • an ohmic resistor is further arranged between the control and the reference electrode of the bipolar transistor of each switch. This ensures that the transistor is not switched on in the off state by glitches at the wrong time.
  • a cascode circuit as in the present case, it can also be used for charging or discharging parasitic capacitances of the field effect transistor. Finally, it also increases the dielectric strength of the bipolar transistors.
  • the switches are designed so that they can be operated in operation with a frequency between 100 Hz and 300 kHz and a voltage of 100 to 1000 volts. Further advantageous embodiments will become apparent from the dependent claims.
  • FIGS. 2 and 3 show embodiments of the input circuit E2 of FIG. 1 in a drive circuit according to the invention. Identical components are provided with the same reference numerals and are explained only once.
  • a bipolar transistor B2 and a field effect transistor F2 in cascode form the switch S2. The gate of the field effect transistor F2 is connected via its terminal 10 to the output of an integrated driver circuit.
  • a transformer preferably designed as a ring core, is located with its primary winding L 0 in the load circuit. Secondary windings are arranged in the respective input circuit, here the secondary winding L2 in the input circuit E2.
  • a diode D21 prevents outflow of charge carriers from the base via the secondary winding L2.
  • a high-resistance resistor R21 which is connected on the one hand to the base of the bipolar transistor B2
  • the intermediate circuit voltage U zw charge carriers can be provided to the base.
  • the base of the bipolar transistor via a parallel connection of a diode D22 and a on the other hand connected via a parallel connection of a diode D22 and a resistor R22 to the reference potential, on which the reference electrode of the field effect transistor F2 is located. This makes it possible to generate a sufficiently large base-emitter voltage with which the circuit arrangement can be started.
  • a resistor R23 serves the dielectric strength of the associated bipolar transistor.
  • a typical value for R21 is 1 M ⁇ , a typical value for R22 is 100 ⁇ .
  • D22 it is also possible to provide a Zener diode, of course in a reverse arrangement.
  • FIG. 3 is the series circuit of secondary winding L2 and diode D21 on the one hand a Zener diode Z2 connected in parallel, on the other hand, the series connection of a resistor R22 and a capacitor C2.
  • the base of the transistor is in turn connected via a high-resistance resistor R21 with the intermediate circuit voltage U zw and via a resistor R23 to the working electrode of the field effect transistor F2.
  • the capacitor C2 is charged to approximately 2 volts via the resistors R22 and R21 when the intermediate circuit voltage U zw is applied .
  • the field effect transistor F2 is switched on via a suitable signal at the terminal 10
  • the bipolar transistor B2 opens
  • the capacitor C2 discharges and, when dimensioning the resistor R22, leads to 10 ⁇ to a base current I B of 100 mA.
  • the switch S2 is turned on for one to two microseconds, a load current I L begins to flow and via the combination of primary winding L 0 and secondary winding L2, a signal is coupled into the input circuit E2, whereby the circuit arrangement is started.
  • this solution also improves the turn-off behavior of the circuit.
  • the problem is namely that when switching off the field effect transistor F2, the emitter current I E of the bipolar transistor abruptly goes to zero.
  • the collector current I C wants to continue flowing, the base is flooded with charge carriers, which leads to long turn-off.
  • long switch-off times are accompanied by the problem that collector current I C and collector-emitter voltage U CE have positive values simultaneously over a certain period of time. Since the product of these two quantities dominates the transmission loss, this results in undesirably high power losses. Due to the parallel connection of diode D22 and ohmic resistor R22 in FIG.
  • the resistor R23 is dimensioned for example with 100 ⁇ and serves to ensure that no current can flow, as long as the field effect transistor is high impedance.
  • FIGS. 2 and 3 show by way of example the input circuit E2. It is obvious to a person skilled in the art that the input circuit E1 must be interpreted symmetrically in a corresponding manner.

Landscapes

  • Electronic Switches (AREA)
  • Circuit Arrangements For Discharge Lamps (AREA)

Claims (10)

  1. Circuit d'attaque pour le fonctionnement d'au moins une lampe ( La ) dans un circuit de charge qui en fait partie et dans lequel les bornes pour la au moins une lampe sont montées, comprenant deux interrupteurs ( S1, S2 ) en demi-pont, chaque interrupteur ( S1, S2 ) comprenant en montage cascode un transistor ( B2 ) bipolaire ayant une électrode de commande, une électrode de travail, et une électrode de référence et un transistor ( F2 ) à effet de champ, ayant une électrode de commande, une électrode de travail et une électrode de référence. le point médian du demi-pont étant couplé au au moins un circuit de charge, caractérisé en ce que chaque montage cascode de ce genre a un circuit ( E1, E2 ) d'entrée, dans lequel en parallèle à l'électrode de commande du transistor ( B2 ) bipolaire et de l'électrode de référence du transistor ( F2 ) à effet de champ est monté le montage série d'une diode ( D21 ) et d'un enroulement ( L2 ) secondaire d'un transformateur dont l'enroulement ( L0 ) primaire est monté dans le circuit de charge, de sorte qu'il est parcouru par le courant ( IL ) du circuit de charge, lorsque la au moins une lampe ( La ) fonctionne.
  2. Circuit d'attaque suivant la revendication 1,
    caractérisé
    en ce que la diode ( D21 ) est montée de manière à ce qu'elle empêche, dans le cas d'un transistor ( B2 ) bipolaire npn, un passage d'un courant ( IB ) de base positif par l'enroulement ( L2 ) secondaire, dans le cas d'un transistor bipolaire pnp, un passage d'un courant de base négatif par l'enroulement secondaire.
  3. Circuit d'attaque suivant l'une des revendications 1 ou 2,
    caractérisé
    en ce qu'en parallèle à l'électrode de commande du transistor ( B2 ) bipolaire et de l'électrode de référence du transistor ( F2 ) à effet de champ, au moins une diode ( D22 ) ou une diode ( Z2 ) Zener est montée entre le potentiel de l'électrode de commande du transistor ( B2 ) bipolaire et le potentiel de l'électrode de référence du transistor ( F2 ) à effet de champ.
  4. Circuit d'attaque suivant l'une des revendications précédentes,
    caractérisé
    en ce qu'en parallèle à l'électrode de commande du transistor ( B2 ) bipolaire et de l'électrode de référence du transistor ( F2 ) à effet de champ est montée un montage série d'une résistance ( R22 ) ohmique et d'un condensateur ( C2 ).
  5. Circuit d'attaque suivant l'une des revendications précédentes,
    caractérisé
    en ce que l'électrode de commande du transistor ( F2 ) à effet de champ est reliée à un circuit d'attaque intégré.
  6. Circuit d'attaque suivant l'une des revendications précédentes,
    caractérisé
    en ce que le coefficient d'utilisation des deux interrupteurs ( S1, S2 ) du demi-pont est sensiblement de 50%.
  7. Circuit d'attaque suivant l'une des revendications 3 à 6,
    caractérisé
    en ce que la diode ( 22 ) ou la diode ( Z2 ) Zener sont telles qu'il chute à ses bornes une tension d'au moins 1 V, de préférence d'environ 2 V.
  8. Circuit d'attaque suivant l'une des revendications précédentes,
    caractérisé
    en ce que l'électrode de référence du transistor ( F2 ) à effet de champ de chaque interrupteur ( S1, S2 ) est reliée à un premier potentiel de référence et l'électrode de commande du transistor bipolaire d'au moins un interrupteur est reliée à un deuxième potentiel ( UZW ) de référence par l'intermédiaire d'une résistance ( R21 ) à grande valeur ohmique.
  9. Circuit d'attaque suivant l'une des revendications précédentes,
    caractérisé
    en ce qu'une résistance ( R23 ) ohmique est montée entre l'électrode de commande et l'électrode de référence du transistor ( B2 ) bipolaire de chaque interrupteur ( S1, S2 ).
  10. Circuit d'attaque suivant l'une des revendications précédentes,
    caractérisé
    en ce que les interrupteurs ( S1, S2 ) sont conçus pour fonctionner à une fréquence comprise entre 100 Hz et 300 kHz et sous une tension de 100 à 1000 V.
EP04009454A 2003-06-06 2004-04-21 Circuit interrupteur pour commander une lampe Expired - Fee Related EP1484947B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10325872 2003-06-06
DE10325872A DE10325872A1 (de) 2003-06-06 2003-06-06 Ansteuerschaltung für den Betrieb mindestens einer Lampe in einem dazugehörigen Lastkreis

Publications (3)

Publication Number Publication Date
EP1484947A2 EP1484947A2 (fr) 2004-12-08
EP1484947A3 EP1484947A3 (fr) 2006-01-18
EP1484947B1 true EP1484947B1 (fr) 2009-08-19

Family

ID=33154586

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04009454A Expired - Fee Related EP1484947B1 (fr) 2003-06-06 2004-04-21 Circuit interrupteur pour commander une lampe

Country Status (7)

Country Link
US (1) US7057355B2 (fr)
EP (1) EP1484947B1 (fr)
KR (1) KR20040105592A (fr)
CN (1) CN100574549C (fr)
CA (1) CA2469575A1 (fr)
DE (2) DE10325872A1 (fr)
TW (1) TW200503584A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012112391B4 (de) * 2012-12-17 2018-10-04 Phoenix Contact Gmbh & Co. Kg Schaltnetzteil mit einer Kaskodenschaltung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4894587A (en) * 1984-08-17 1990-01-16 Lutron Electronics Co., Inc. High frequency gas discharge lamp dimming ballast
FR2603756B1 (fr) * 1986-09-09 1993-03-26 Cfei Co Fr Electrotherm Ind Onduleur de tension autopilote en frequence
JPH06511350A (ja) * 1992-07-17 1994-12-15 オスラム・シルバニア・インコーポレイテッド 電源回路
TW307980B (fr) * 1994-04-28 1997-06-11 Toshiba Light Technic Kk
US5783911A (en) * 1995-07-12 1998-07-21 Patent-Treuhand-Gesellschaft Fuer Elektrische Gluehlampen Mbh Circuit arrangement for operating electric lamps, and operating method for electric lamps
EP0936845B1 (fr) * 1998-02-10 2002-09-18 STMicroelectronics S.A. Dispositif et procédé d'amorçage et d'alimentation de tube fluorescent
DE19830368A1 (de) * 1998-07-07 2000-02-03 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Elektronisches Vorschaltgerät mit Einschaltstrombegrenzung
DE10200047A1 (de) * 2002-01-02 2003-07-17 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Vorschaltgerät für eine Lampe und Verfahren zum betreiben eines Vorschaltgeräts für eine Lampe

Also Published As

Publication number Publication date
CN1575079A (zh) 2005-02-02
DE10325872A1 (de) 2004-12-23
TW200503584A (en) 2005-01-16
EP1484947A3 (fr) 2006-01-18
US20040245938A1 (en) 2004-12-09
CA2469575A1 (fr) 2004-12-06
EP1484947A2 (fr) 2004-12-08
US7057355B2 (en) 2006-06-06
KR20040105592A (ko) 2004-12-16
CN100574549C (zh) 2009-12-23
DE502004009910D1 (de) 2009-10-01

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