EP1393128A1 - Systeme lithographique et procede de fabrication de dispositifs - Google Patents
Systeme lithographique et procede de fabrication de dispositifsInfo
- Publication number
- EP1393128A1 EP1393128A1 EP02726678A EP02726678A EP1393128A1 EP 1393128 A1 EP1393128 A1 EP 1393128A1 EP 02726678 A EP02726678 A EP 02726678A EP 02726678 A EP02726678 A EP 02726678A EP 1393128 A1 EP1393128 A1 EP 1393128A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- radiation
- workpiece
- pulse
- mask
- pulses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
L'invention concerne un système lithographique ainsi qu'un procédé de fabrication de dispositifs à moindres frais pouvant utiliser un nouveau mode de fonctionnement de type 'flash à la volée', des champs d'exposition étant formés au moyen d'impulsions simples de rayonnement. Ce système comprend une source de rayonnement pulsé (14), un système d'éclairage (24), un masque (M), une lentille de projection (40) et un étage de pièce à usiner (50) supportant une pièce à usiner (W) dotée d'une surface de support d'image (WS). On utilise un contrôleur de source de rayonnement (16) et un système de positionnement d'étage de pièce à usiner (60) comprenant un dispositif métrologique (62) pour coordonner et contrôler l'exposition du masque aux impulsions de rayonnement de façon que des impulsions de rayonnement adjacentes forment des champs d'exposition adjacents (EF). Lorsque l'uniformité d'impulsion à impulsion à partir de la source de rayonnement est insuffisante, on peut éventuellement utiliser un système de stabilisation d'impulsions (18) pour obtenir l'uniformité d'impulsion à impulsion souhaitée dans une dose d'exposition. La rapidité avec laquelle les expositions peuvent être réalisées au moyen d'une impulsion de rayonnement permet d'obtenir un débit très élevé, lequel permet à son tour d'utiliser une lentille de projection de champ d'image de petite taille de manière économique dans la fabrication de dispositifs tels que des circuits intégrés à semi-conducteurs, entre autres. On peut également utiliser ledit système dans un mode de fonctionnement de type 'reproduction pas à pas' classique, l'utilisateur du système pouvant ainsi choisir le mode de fonctionnement le plus économique pour n'importe quelle application.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US854226 | 1986-04-21 | ||
US09/854,226 US6753947B2 (en) | 2001-05-10 | 2001-05-10 | Lithography system and method for device manufacture |
PCT/US2002/009593 WO2002093254A1 (fr) | 2001-05-10 | 2002-03-27 | Systeme lithographique et procede de fabrication de dispositifs |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1393128A1 true EP1393128A1 (fr) | 2004-03-03 |
Family
ID=25318087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02726678A Withdrawn EP1393128A1 (fr) | 2001-05-10 | 2002-03-27 | Systeme lithographique et procede de fabrication de dispositifs |
Country Status (5)
Country | Link |
---|---|
US (3) | US6753947B2 (fr) |
EP (1) | EP1393128A1 (fr) |
JP (1) | JP2005506684A (fr) |
KR (1) | KR20040029982A (fr) |
WO (1) | WO2002093254A1 (fr) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002134396A (ja) * | 2000-10-25 | 2002-05-10 | Sony Corp | 半導体装置の製造方法および半導体パターン自動調節装置 |
US6760641B2 (en) * | 2001-08-08 | 2004-07-06 | Asml Holding N.V. | Discrete time trajectory planner for lithography system |
TWI240850B (en) * | 2001-12-26 | 2005-10-01 | Pentax Corp | Projection aligner |
JP2003303751A (ja) * | 2002-04-05 | 2003-10-24 | Canon Inc | 投影光学系、該投影光学系を有する露光装置及び方法 |
JP2004053807A (ja) * | 2002-07-18 | 2004-02-19 | Renesas Technology Corp | マスクメーカ選定方法 |
US6881592B2 (en) * | 2002-10-11 | 2005-04-19 | Infineon Technologies Richmond, Lp | Method and device for minimizing multi-layer microscopic and macroscopic alignment errors |
SG111171A1 (en) * | 2002-11-27 | 2005-05-30 | Asml Netherlands Bv | Lithographic projection apparatus and device manufacturing method |
US6781094B2 (en) * | 2002-12-30 | 2004-08-24 | Texas Instruments Incorporated | Analysis of MEMS mirror device using a laser for mirror removal |
US7037012B2 (en) * | 2003-02-24 | 2006-05-02 | Ziv-Av Engineering Ltd. | Scanning mechanism for high-speed high-resolution scanning |
US8208198B2 (en) | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
DE10354112B4 (de) * | 2003-11-19 | 2008-07-31 | Qimonda Ag | Verfahren und Anordnung zur Reparatur von Speicherchips mittels Mikro-Lithographie-Verfahren |
US7361457B2 (en) * | 2004-01-13 | 2008-04-22 | International Business Machines Corporation | Real-time configurable masking |
US20080151364A1 (en) | 2004-01-14 | 2008-06-26 | Carl Zeiss Smt Ag | Catadioptric projection objective |
KR20140138350A (ko) | 2004-05-17 | 2014-12-03 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20140003800A1 (en) * | 2004-09-24 | 2014-01-02 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
US20060066842A1 (en) * | 2004-09-30 | 2006-03-30 | Saunders Winston A | Wafer inspection with a customized reflective optical channel component |
US7432517B2 (en) * | 2004-11-19 | 2008-10-07 | Asml Netherlands B.V. | Pulse modifier, lithographic apparatus, and device manufacturing method |
US7391499B2 (en) | 2004-12-02 | 2008-06-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
GB2422679A (en) * | 2005-01-28 | 2006-08-02 | Exitech Ltd | Exposure method and tool |
EP1896902B1 (fr) * | 2005-04-15 | 2018-09-19 | Mycronic AB | Procédé pour générer des motifs par faisceaux d'irradiation multiples et générateur de motifs |
JP4686599B2 (ja) * | 2005-04-15 | 2011-05-25 | マイクロニック レーザー システムズ アクチボラゲット | 画像強調技法 |
WO2006117642A2 (fr) * | 2005-05-02 | 2006-11-09 | Radove Gmbh | Procede lithographique de transfert de motif sans masque sur un substrat photosensible |
US7645620B2 (en) * | 2005-10-11 | 2010-01-12 | International Business Machines Corporation | Method and structure for reducing prior level edge interference with critical dimension measurement |
US7626181B2 (en) * | 2005-12-09 | 2009-12-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7728955B2 (en) * | 2006-03-21 | 2010-06-01 | Asml Netherlands B.V. | Lithographic apparatus, radiation supply and device manufacturing method |
KR100735532B1 (ko) * | 2006-03-21 | 2007-07-04 | 삼성전자주식회사 | 기판 내에 팽창부를 포함하는 포토마스크 및 포토마스크의표면 평탄화 방법 |
GB2438601B (en) * | 2006-05-24 | 2008-04-09 | Exitech Ltd | Method and unit for micro-structuring a moving substrate |
US7697115B2 (en) * | 2006-06-23 | 2010-04-13 | Asml Holding N.V. | Resonant scanning mirror |
KR100791338B1 (ko) * | 2006-08-07 | 2008-01-03 | 삼성전자주식회사 | 레지스트레이션이 보정된 포토마스크 및 포토마스크의레지스트레이션 보정 방법 |
US7868999B2 (en) * | 2006-08-10 | 2011-01-11 | Asml Netherlands B.V. | Lithographic apparatus, source, source controller and control method |
US20080050680A1 (en) * | 2006-08-24 | 2008-02-28 | Stefan Brandl | Lithography systems and methods |
US7626182B2 (en) * | 2006-09-05 | 2009-12-01 | Asml Netherlands B.V. | Radiation pulse energy control system, lithographic apparatus and device manufacturing method |
US7738079B2 (en) * | 2006-11-14 | 2010-06-15 | Asml Netherlands B.V. | Radiation beam pulse trimming |
US20090323739A1 (en) * | 2006-12-22 | 2009-12-31 | Uv Tech Systems | Laser optical system |
US20080151951A1 (en) * | 2006-12-22 | 2008-06-26 | Elliott David J | Laser optical system |
US7772570B2 (en) | 2006-12-22 | 2010-08-10 | Asml Netherlands B.V. | Assembly for blocking a beam of radiation and method of blocking a beam of radiation |
CN100456141C (zh) * | 2007-01-23 | 2009-01-28 | 上海微电子装备有限公司 | 批量硅片曝光的方法 |
US9529275B2 (en) * | 2007-02-21 | 2016-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography scanner throughput |
US7917244B2 (en) * | 2007-03-14 | 2011-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for reducing critical dimension side-to-side tilting error |
US7714986B2 (en) * | 2007-05-24 | 2010-05-11 | Asml Netherlands B.V. | Laser beam conditioning system comprising multiple optical paths allowing for dose control |
US8482732B2 (en) * | 2007-10-01 | 2013-07-09 | Maskless Lithography, Inc. | Alignment system for various materials and material flows |
US8715909B2 (en) * | 2007-10-05 | 2014-05-06 | Infineon Technologies Ag | Lithography systems and methods of manufacturing using thereof |
US20090091729A1 (en) * | 2007-10-05 | 2009-04-09 | Sajan Marokkey | Lithography Systems and Methods of Manufacturing Using Thereof |
US7947968B1 (en) * | 2009-01-29 | 2011-05-24 | Ultratech, Inc. | Processing substrates using direct and recycled radiation |
NL2004256A (en) * | 2009-05-13 | 2010-11-18 | Asml Netherlands Bv | Enhancing alignment in lithographic apparatus device manufacture. |
WO2011020690A2 (fr) | 2009-08-07 | 2011-02-24 | Carl Zeiss Smt Gmbh | Procédé pour produire un miroir ayant au moins deux surfaces de miroir, miroir d'un appareil d'exposition par projection pour microlithographie et appareil d'exposition par projection |
KR101448444B1 (ko) * | 2010-06-10 | 2014-10-15 | 에스티에스반도체통신 주식회사 | 무선 신호 검사 기능을 가지는 비아 홀 가공용 레이저 장치 및 그 가공 방법 |
CN101893826B (zh) * | 2010-06-25 | 2012-01-04 | 袁波 | 电路板的感光式制版方法及其制版机 |
AU2011202449A1 (en) * | 2010-08-16 | 2012-03-01 | Agilent Technologies Australia (M) Pty Ltd | Xenon flash lamp |
US9034233B2 (en) * | 2010-11-30 | 2015-05-19 | Infineon Technologies Ag | Method of processing a substrate |
US8254768B2 (en) * | 2010-12-22 | 2012-08-28 | Michael Braithwaite | System and method for illuminating and imaging the iris of a person |
CN104272192A (zh) * | 2012-06-01 | 2015-01-07 | Asml荷兰有限公司 | 用于改变多个辐射束的性质的组件、光刻仪器、改变多个辐射束的性质的方法以及器件制造方法 |
US8999610B2 (en) * | 2012-12-31 | 2015-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography mask repairing process |
CN103324037B (zh) * | 2013-07-04 | 2015-01-07 | 北京京东方光电科技有限公司 | 一种曝光装置及其曝光方法 |
US9158884B2 (en) * | 2013-11-04 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for repairing wafer defects |
NL2015073A (en) * | 2014-07-15 | 2016-04-12 | Asml Netherlands Bv | Lithography apparatus and method of manufacturing devices. |
US9645496B2 (en) | 2014-08-08 | 2017-05-09 | David A. Markle | Maskless digital lithography systems and methods with image motion compensation |
KR20180059812A (ko) * | 2015-09-30 | 2018-06-05 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법, 그리고 플랫 패널 디스플레이 제조 방법 |
US10031427B2 (en) * | 2015-09-30 | 2018-07-24 | Applied Materials, Inc. | Methods and apparatus for vibration damping stage |
US11067900B2 (en) * | 2016-05-19 | 2021-07-20 | Nikon Corporation | Dense line extreme ultraviolet lithography system with distortion matching |
US9929045B2 (en) * | 2016-07-14 | 2018-03-27 | Taiwan Semiconductor Manufacturing Company Ltd. | Defect inspection and repairing method and associated system and non-transitory computer readable medium |
US11169026B2 (en) * | 2018-11-30 | 2021-11-09 | Munro Design & Technologies, Llc | Optical measurement systems and methods thereof |
CN112596346B (zh) * | 2020-12-09 | 2022-09-27 | 合肥芯碁微电子装备股份有限公司 | 曝光系统的控制方法和曝光系统 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4095891A (en) | 1976-12-27 | 1978-06-20 | Gca Corporation | On-the-fly photoresist exposure apparatus |
US4980896A (en) * | 1986-04-15 | 1990-12-25 | Hampshire Instruments, Inc. | X-ray lithography system |
JPH01503100A (ja) | 1986-06-24 | 1989-10-19 | ロージアン マイクロファブリケイション リミティド | 写真印刷における符合方法及びその方法を実施するための装置 |
US5523193A (en) * | 1988-05-31 | 1996-06-04 | Texas Instruments Incorporated | Method and apparatus for patterning and imaging member |
US5077774A (en) * | 1989-07-12 | 1991-12-31 | Adelphi Technology Inc. | X-ray lithography source |
US5385633A (en) * | 1990-03-29 | 1995-01-31 | The United States Of America As Represented By The Secretary Of The Navy | Method for laser-assisted silicon etching using halocarbon ambients |
US5633735A (en) * | 1990-11-09 | 1997-05-27 | Litel Instruments | Use of fresnel zone plates for material processing |
US5362940A (en) * | 1990-11-09 | 1994-11-08 | Litel Instruments | Use of Fresnel zone plates for material processing |
CA2075026A1 (fr) * | 1991-08-08 | 1993-02-09 | William E. Nelson | Methode et appareil de creation de configuration sur un element d'imagerie |
US5281996A (en) | 1992-09-04 | 1994-01-25 | General Signal Corporation | Photolithographic reduction imaging of extended field |
US5523543A (en) * | 1994-09-09 | 1996-06-04 | Litel Instruments | Laser ablation control system and method |
US5749769A (en) | 1994-12-16 | 1998-05-12 | International Business Machines Corporation | Lapping process using micro-advancement for optimizing flatness of a magnetic head air bearing surface |
JP3590822B2 (ja) * | 1995-12-12 | 2004-11-17 | 株式会社ニコン | 露光方法及び装置 |
US5699621A (en) | 1996-02-21 | 1997-12-23 | Massachusetts Institute Of Technology | Positioner with long travel in two dimensions |
US6080148A (en) | 1996-11-18 | 2000-06-27 | Trimedyne, Inc. | Variable pulse width lasing device |
US5767523A (en) * | 1997-04-09 | 1998-06-16 | Svg Lithography Systems, Inc. | Multiple detector alignment system for photolithography |
WO1998057363A1 (fr) * | 1997-06-09 | 1998-12-17 | Nikon Corporation | Systeme d'exposition, procede servant a fabriquer ce systeme d'exposition et procede servant a fabriquer des dispositifs |
US5987042A (en) | 1997-10-31 | 1999-11-16 | General Electric Company | Method and apparatus for shaping a laser pulse |
SE9800665D0 (sv) * | 1998-03-02 | 1998-03-02 | Micronic Laser Systems Ab | Improved method for projection printing using a micromirror SLM |
US6151345A (en) | 1998-07-07 | 2000-11-21 | Dtm Corporation | Laser power control with stretched initial pulses |
US6198069B1 (en) * | 1998-08-13 | 2001-03-06 | The Regents Of The University Of California | Laser beam temporal and spatial tailoring for laser shock processing |
JP2000091192A (ja) * | 1998-09-09 | 2000-03-31 | Nikon Corp | 露光装置 |
US6172325B1 (en) | 1999-02-10 | 2001-01-09 | Electro Scientific Industries, Inc. | Laser processing power output stabilization apparatus and method employing processing position feedback |
US6353271B1 (en) * | 1999-10-29 | 2002-03-05 | Euv, Llc | Extreme-UV scanning wafer and reticle stages |
-
2001
- 2001-05-10 US US09/854,226 patent/US6753947B2/en not_active Expired - Lifetime
- 2001-08-20 US US09/933,583 patent/US6556279B1/en not_active Expired - Fee Related
- 2001-10-22 US US10/035,764 patent/US6731376B1/en not_active Expired - Fee Related
-
2002
- 2002-03-27 WO PCT/US2002/009593 patent/WO2002093254A1/fr not_active Application Discontinuation
- 2002-03-27 KR KR10-2003-7014633A patent/KR20040029982A/ko not_active Application Discontinuation
- 2002-03-27 JP JP2002589875A patent/JP2005506684A/ja active Pending
- 2002-03-27 EP EP02726678A patent/EP1393128A1/fr not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
See references of WO02093254A1 * |
Also Published As
Publication number | Publication date |
---|---|
US6753947B2 (en) | 2004-06-22 |
KR20040029982A (ko) | 2004-04-08 |
WO2002093254A8 (fr) | 2002-12-27 |
JP2005506684A (ja) | 2005-03-03 |
WO2002093254A3 (fr) | 2009-06-11 |
WO2002093254A1 (fr) | 2002-11-21 |
US20020186359A1 (en) | 2002-12-12 |
US6731376B1 (en) | 2004-05-04 |
US6556279B1 (en) | 2003-04-29 |
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