EP1393128A1 - Systeme lithographique et procede de fabrication de dispositifs - Google Patents

Systeme lithographique et procede de fabrication de dispositifs

Info

Publication number
EP1393128A1
EP1393128A1 EP02726678A EP02726678A EP1393128A1 EP 1393128 A1 EP1393128 A1 EP 1393128A1 EP 02726678 A EP02726678 A EP 02726678A EP 02726678 A EP02726678 A EP 02726678A EP 1393128 A1 EP1393128 A1 EP 1393128A1
Authority
EP
European Patent Office
Prior art keywords
radiation
workpiece
pulse
mask
pulses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02726678A
Other languages
German (de)
English (en)
Inventor
Dan Meisburger
David A. Markle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ultratech Inc
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of EP1393128A1 publication Critical patent/EP1393128A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • G03F7/70725Stages control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70041Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70225Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un système lithographique ainsi qu'un procédé de fabrication de dispositifs à moindres frais pouvant utiliser un nouveau mode de fonctionnement de type 'flash à la volée', des champs d'exposition étant formés au moyen d'impulsions simples de rayonnement. Ce système comprend une source de rayonnement pulsé (14), un système d'éclairage (24), un masque (M), une lentille de projection (40) et un étage de pièce à usiner (50) supportant une pièce à usiner (W) dotée d'une surface de support d'image (WS). On utilise un contrôleur de source de rayonnement (16) et un système de positionnement d'étage de pièce à usiner (60) comprenant un dispositif métrologique (62) pour coordonner et contrôler l'exposition du masque aux impulsions de rayonnement de façon que des impulsions de rayonnement adjacentes forment des champs d'exposition adjacents (EF). Lorsque l'uniformité d'impulsion à impulsion à partir de la source de rayonnement est insuffisante, on peut éventuellement utiliser un système de stabilisation d'impulsions (18) pour obtenir l'uniformité d'impulsion à impulsion souhaitée dans une dose d'exposition. La rapidité avec laquelle les expositions peuvent être réalisées au moyen d'une impulsion de rayonnement permet d'obtenir un débit très élevé, lequel permet à son tour d'utiliser une lentille de projection de champ d'image de petite taille de manière économique dans la fabrication de dispositifs tels que des circuits intégrés à semi-conducteurs, entre autres. On peut également utiliser ledit système dans un mode de fonctionnement de type 'reproduction pas à pas' classique, l'utilisateur du système pouvant ainsi choisir le mode de fonctionnement le plus économique pour n'importe quelle application.
EP02726678A 2001-05-10 2002-03-27 Systeme lithographique et procede de fabrication de dispositifs Withdrawn EP1393128A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US854226 1986-04-21
US09/854,226 US6753947B2 (en) 2001-05-10 2001-05-10 Lithography system and method for device manufacture
PCT/US2002/009593 WO2002093254A1 (fr) 2001-05-10 2002-03-27 Systeme lithographique et procede de fabrication de dispositifs

Publications (1)

Publication Number Publication Date
EP1393128A1 true EP1393128A1 (fr) 2004-03-03

Family

ID=25318087

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02726678A Withdrawn EP1393128A1 (fr) 2001-05-10 2002-03-27 Systeme lithographique et procede de fabrication de dispositifs

Country Status (5)

Country Link
US (3) US6753947B2 (fr)
EP (1) EP1393128A1 (fr)
JP (1) JP2005506684A (fr)
KR (1) KR20040029982A (fr)
WO (1) WO2002093254A1 (fr)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134396A (ja) * 2000-10-25 2002-05-10 Sony Corp 半導体装置の製造方法および半導体パターン自動調節装置
US6760641B2 (en) * 2001-08-08 2004-07-06 Asml Holding N.V. Discrete time trajectory planner for lithography system
TWI240850B (en) * 2001-12-26 2005-10-01 Pentax Corp Projection aligner
JP2003303751A (ja) * 2002-04-05 2003-10-24 Canon Inc 投影光学系、該投影光学系を有する露光装置及び方法
JP2004053807A (ja) * 2002-07-18 2004-02-19 Renesas Technology Corp マスクメーカ選定方法
US6881592B2 (en) * 2002-10-11 2005-04-19 Infineon Technologies Richmond, Lp Method and device for minimizing multi-layer microscopic and macroscopic alignment errors
SG111171A1 (en) * 2002-11-27 2005-05-30 Asml Netherlands Bv Lithographic projection apparatus and device manufacturing method
US6781094B2 (en) * 2002-12-30 2004-08-24 Texas Instruments Incorporated Analysis of MEMS mirror device using a laser for mirror removal
US7037012B2 (en) * 2003-02-24 2006-05-02 Ziv-Av Engineering Ltd. Scanning mechanism for high-speed high-resolution scanning
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
DE10354112B4 (de) * 2003-11-19 2008-07-31 Qimonda Ag Verfahren und Anordnung zur Reparatur von Speicherchips mittels Mikro-Lithographie-Verfahren
US7361457B2 (en) * 2004-01-13 2008-04-22 International Business Machines Corporation Real-time configurable masking
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20140138350A (ko) 2004-05-17 2014-12-03 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20140003800A1 (en) * 2004-09-24 2014-01-02 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US20060066842A1 (en) * 2004-09-30 2006-03-30 Saunders Winston A Wafer inspection with a customized reflective optical channel component
US7432517B2 (en) * 2004-11-19 2008-10-07 Asml Netherlands B.V. Pulse modifier, lithographic apparatus, and device manufacturing method
US7391499B2 (en) 2004-12-02 2008-06-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
GB2422679A (en) * 2005-01-28 2006-08-02 Exitech Ltd Exposure method and tool
EP1896902B1 (fr) * 2005-04-15 2018-09-19 Mycronic AB Procédé pour générer des motifs par faisceaux d'irradiation multiples et générateur de motifs
JP4686599B2 (ja) * 2005-04-15 2011-05-25 マイクロニック レーザー システムズ アクチボラゲット 画像強調技法
WO2006117642A2 (fr) * 2005-05-02 2006-11-09 Radove Gmbh Procede lithographique de transfert de motif sans masque sur un substrat photosensible
US7645620B2 (en) * 2005-10-11 2010-01-12 International Business Machines Corporation Method and structure for reducing prior level edge interference with critical dimension measurement
US7626181B2 (en) * 2005-12-09 2009-12-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7728955B2 (en) * 2006-03-21 2010-06-01 Asml Netherlands B.V. Lithographic apparatus, radiation supply and device manufacturing method
KR100735532B1 (ko) * 2006-03-21 2007-07-04 삼성전자주식회사 기판 내에 팽창부를 포함하는 포토마스크 및 포토마스크의표면 평탄화 방법
GB2438601B (en) * 2006-05-24 2008-04-09 Exitech Ltd Method and unit for micro-structuring a moving substrate
US7697115B2 (en) * 2006-06-23 2010-04-13 Asml Holding N.V. Resonant scanning mirror
KR100791338B1 (ko) * 2006-08-07 2008-01-03 삼성전자주식회사 레지스트레이션이 보정된 포토마스크 및 포토마스크의레지스트레이션 보정 방법
US7868999B2 (en) * 2006-08-10 2011-01-11 Asml Netherlands B.V. Lithographic apparatus, source, source controller and control method
US20080050680A1 (en) * 2006-08-24 2008-02-28 Stefan Brandl Lithography systems and methods
US7626182B2 (en) * 2006-09-05 2009-12-01 Asml Netherlands B.V. Radiation pulse energy control system, lithographic apparatus and device manufacturing method
US7738079B2 (en) * 2006-11-14 2010-06-15 Asml Netherlands B.V. Radiation beam pulse trimming
US20090323739A1 (en) * 2006-12-22 2009-12-31 Uv Tech Systems Laser optical system
US20080151951A1 (en) * 2006-12-22 2008-06-26 Elliott David J Laser optical system
US7772570B2 (en) 2006-12-22 2010-08-10 Asml Netherlands B.V. Assembly for blocking a beam of radiation and method of blocking a beam of radiation
CN100456141C (zh) * 2007-01-23 2009-01-28 上海微电子装备有限公司 批量硅片曝光的方法
US9529275B2 (en) * 2007-02-21 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography scanner throughput
US7917244B2 (en) * 2007-03-14 2011-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing critical dimension side-to-side tilting error
US7714986B2 (en) * 2007-05-24 2010-05-11 Asml Netherlands B.V. Laser beam conditioning system comprising multiple optical paths allowing for dose control
US8482732B2 (en) * 2007-10-01 2013-07-09 Maskless Lithography, Inc. Alignment system for various materials and material flows
US8715909B2 (en) * 2007-10-05 2014-05-06 Infineon Technologies Ag Lithography systems and methods of manufacturing using thereof
US20090091729A1 (en) * 2007-10-05 2009-04-09 Sajan Marokkey Lithography Systems and Methods of Manufacturing Using Thereof
US7947968B1 (en) * 2009-01-29 2011-05-24 Ultratech, Inc. Processing substrates using direct and recycled radiation
NL2004256A (en) * 2009-05-13 2010-11-18 Asml Netherlands Bv Enhancing alignment in lithographic apparatus device manufacture.
WO2011020690A2 (fr) 2009-08-07 2011-02-24 Carl Zeiss Smt Gmbh Procédé pour produire un miroir ayant au moins deux surfaces de miroir, miroir d'un appareil d'exposition par projection pour microlithographie et appareil d'exposition par projection
KR101448444B1 (ko) * 2010-06-10 2014-10-15 에스티에스반도체통신 주식회사 무선 신호 검사 기능을 가지는 비아 홀 가공용 레이저 장치 및 그 가공 방법
CN101893826B (zh) * 2010-06-25 2012-01-04 袁波 电路板的感光式制版方法及其制版机
AU2011202449A1 (en) * 2010-08-16 2012-03-01 Agilent Technologies Australia (M) Pty Ltd Xenon flash lamp
US9034233B2 (en) * 2010-11-30 2015-05-19 Infineon Technologies Ag Method of processing a substrate
US8254768B2 (en) * 2010-12-22 2012-08-28 Michael Braithwaite System and method for illuminating and imaging the iris of a person
CN104272192A (zh) * 2012-06-01 2015-01-07 Asml荷兰有限公司 用于改变多个辐射束的性质的组件、光刻仪器、改变多个辐射束的性质的方法以及器件制造方法
US8999610B2 (en) * 2012-12-31 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography mask repairing process
CN103324037B (zh) * 2013-07-04 2015-01-07 北京京东方光电科技有限公司 一种曝光装置及其曝光方法
US9158884B2 (en) * 2013-11-04 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for repairing wafer defects
NL2015073A (en) * 2014-07-15 2016-04-12 Asml Netherlands Bv Lithography apparatus and method of manufacturing devices.
US9645496B2 (en) 2014-08-08 2017-05-09 David A. Markle Maskless digital lithography systems and methods with image motion compensation
KR20180059812A (ko) * 2015-09-30 2018-06-05 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 플랫 패널 디스플레이 제조 방법
US10031427B2 (en) * 2015-09-30 2018-07-24 Applied Materials, Inc. Methods and apparatus for vibration damping stage
US11067900B2 (en) * 2016-05-19 2021-07-20 Nikon Corporation Dense line extreme ultraviolet lithography system with distortion matching
US9929045B2 (en) * 2016-07-14 2018-03-27 Taiwan Semiconductor Manufacturing Company Ltd. Defect inspection and repairing method and associated system and non-transitory computer readable medium
US11169026B2 (en) * 2018-11-30 2021-11-09 Munro Design & Technologies, Llc Optical measurement systems and methods thereof
CN112596346B (zh) * 2020-12-09 2022-09-27 合肥芯碁微电子装备股份有限公司 曝光系统的控制方法和曝光系统

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4095891A (en) 1976-12-27 1978-06-20 Gca Corporation On-the-fly photoresist exposure apparatus
US4980896A (en) * 1986-04-15 1990-12-25 Hampshire Instruments, Inc. X-ray lithography system
JPH01503100A (ja) 1986-06-24 1989-10-19 ロージアン マイクロファブリケイション リミティド 写真印刷における符合方法及びその方法を実施するための装置
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
US5077774A (en) * 1989-07-12 1991-12-31 Adelphi Technology Inc. X-ray lithography source
US5385633A (en) * 1990-03-29 1995-01-31 The United States Of America As Represented By The Secretary Of The Navy Method for laser-assisted silicon etching using halocarbon ambients
US5633735A (en) * 1990-11-09 1997-05-27 Litel Instruments Use of fresnel zone plates for material processing
US5362940A (en) * 1990-11-09 1994-11-08 Litel Instruments Use of Fresnel zone plates for material processing
CA2075026A1 (fr) * 1991-08-08 1993-02-09 William E. Nelson Methode et appareil de creation de configuration sur un element d'imagerie
US5281996A (en) 1992-09-04 1994-01-25 General Signal Corporation Photolithographic reduction imaging of extended field
US5523543A (en) * 1994-09-09 1996-06-04 Litel Instruments Laser ablation control system and method
US5749769A (en) 1994-12-16 1998-05-12 International Business Machines Corporation Lapping process using micro-advancement for optimizing flatness of a magnetic head air bearing surface
JP3590822B2 (ja) * 1995-12-12 2004-11-17 株式会社ニコン 露光方法及び装置
US5699621A (en) 1996-02-21 1997-12-23 Massachusetts Institute Of Technology Positioner with long travel in two dimensions
US6080148A (en) 1996-11-18 2000-06-27 Trimedyne, Inc. Variable pulse width lasing device
US5767523A (en) * 1997-04-09 1998-06-16 Svg Lithography Systems, Inc. Multiple detector alignment system for photolithography
WO1998057363A1 (fr) * 1997-06-09 1998-12-17 Nikon Corporation Systeme d'exposition, procede servant a fabriquer ce systeme d'exposition et procede servant a fabriquer des dispositifs
US5987042A (en) 1997-10-31 1999-11-16 General Electric Company Method and apparatus for shaping a laser pulse
SE9800665D0 (sv) * 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
US6151345A (en) 1998-07-07 2000-11-21 Dtm Corporation Laser power control with stretched initial pulses
US6198069B1 (en) * 1998-08-13 2001-03-06 The Regents Of The University Of California Laser beam temporal and spatial tailoring for laser shock processing
JP2000091192A (ja) * 1998-09-09 2000-03-31 Nikon Corp 露光装置
US6172325B1 (en) 1999-02-10 2001-01-09 Electro Scientific Industries, Inc. Laser processing power output stabilization apparatus and method employing processing position feedback
US6353271B1 (en) * 1999-10-29 2002-03-05 Euv, Llc Extreme-UV scanning wafer and reticle stages

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO02093254A1 *

Also Published As

Publication number Publication date
US6753947B2 (en) 2004-06-22
KR20040029982A (ko) 2004-04-08
WO2002093254A8 (fr) 2002-12-27
JP2005506684A (ja) 2005-03-03
WO2002093254A3 (fr) 2009-06-11
WO2002093254A1 (fr) 2002-11-21
US20020186359A1 (en) 2002-12-12
US6731376B1 (en) 2004-05-04
US6556279B1 (en) 2003-04-29

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