EP1344243A1 - Procede et dispositif pour traiter des substrats semi-conducteurs - Google Patents

Procede et dispositif pour traiter des substrats semi-conducteurs

Info

Publication number
EP1344243A1
EP1344243A1 EP01994794A EP01994794A EP1344243A1 EP 1344243 A1 EP1344243 A1 EP 1344243A1 EP 01994794 A EP01994794 A EP 01994794A EP 01994794 A EP01994794 A EP 01994794A EP 1344243 A1 EP1344243 A1 EP 1344243A1
Authority
EP
European Patent Office
Prior art keywords
chamber
pressure
processing
processing chamber
transfer chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01994794A
Other languages
German (de)
English (en)
Inventor
Piotr Strzyzewski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10159702A external-priority patent/DE10159702A1/de
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of EP1344243A1 publication Critical patent/EP1344243A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Definitions

  • the invention relates to a method and a device
  • the semiconductor substrates can be loaded, for which purpose first
  • 00027 processing chambers is carried out by means of at least one in
  • 00029 processing chambers are by means of the transfer chamber
  • 00034 vacuum or ultra high vacuum only needs to take place 00035 the transfer chamber is evacuated or kept in a vacuum
  • 00041 gene CVD processes are parasitic depositions e.g. on
  • the particles can be any material that can be used to make a Particle formation going out.
  • the particles can be any material that can be used to make a Particle formation going out.
  • 00053 is cooled. Especially with process printing
  • 00055 influenced the thermal conductivity to a significant extent.
  • the object of the invention is measures
  • 00072 transfer chamber is flooded with an inert gas.
  • 00073 measure has the consequence ,, that the processing chamber on
  • the invention provides that when opening the
  • 00078 gig is higher than the pressure in the processing chamber.
  • 00089 has a heated process chamber during loading
  • 00103 see compounds of Ga, In or AI.
  • the invention also relates to a device or a
  • 00122 is set by a controllable valve that the
  • 00126 influenced the pump associated with the transfer chamber. 00127
  • the invention relates in particular to the control method
  • the purge gas flow is from the total
  • the second parameter is the pressure difference
  • 00139 renz can be dependent on the total pressure. From these 00140 determines the two parameters, the process control unit, 00141 which can be a computer, the 00142 pressure in the other chamber. Depending on this pressure 00143, the purge gas flow 00144 to be set for this chamber is determined. The purge gas flow and the pressure 00145 are then set. If stable pressure conditions 00147 have occurred in both the processing chamber and 00146, the connecting door is opened. The pressure in the processing chamber is preferred00148, so that the transfer chamber pressure is set according to the 00150 pressure difference and the processing chamber pressure. The pressure difference between transfer chamber 00152 pressure and processing chamber pressure can be between 0, 1 and 00153 5 bar.
  • the pressure in the transfer chamber or the 00154 pressure in the processing chamber can be between one and 00155 several 100 mbar. Accordingly, the 00156 purge gas flow into the transfer chamber or the processing chamber is between 100 and 500 sccm. The flow can also be larger in the processing chamber.
  • 00159 00160 00161 Embodiments of the invention are explained below 00162 with reference to the accompanying drawings.
  • the figures show: 00163 00164 Fig. 1 in a rough schematic representation of a device for processing semiconductor substrates, 00166 00167 Fig. 2 roughly schematic a section through a transfer chamber 00168 and a processing chamber with 00169 indicated gas flows and 00170 00171 Fig. 3 the flow chart of the pressure control in the Trans00172 chamber. 00173 00174
  • the device shown in Fig. 1 has as
  • 00175 central element is a transfer chamber 2.
  • transfer chamber 2 In the transfer
  • 00182 se 1 is from the transfer chamber 2 by means of a connection
  • the processing chamber 3 can be an ultra
  • 00200 processing chamber 5 can either be a vacuum process or
  • 00205 Wafers can be made of silicon, depending on the process
  • 00206 gallium arsenide or indium phosphide can consist of
  • the transfer chamber 2 sits a robot arm 10 which
  • an inert gas for example argon or nitrogen
  • 00229 is when the pressure in the low pressure or atmospheric
  • this processing chamber 4 has one in the state
  • the process chamber is kept at process temperature
  • 00262 gate is formed, can in other machining chamber
  • the invention also includes multi-chamber devices
  • FIG. 2 An arrangement is shown roughly schematically in FIG. 2
  • 00275 provides a transfer chamber 2 and a processing
  • 00276 has chamber 4 which by means of a bulkhead 7 voneinan ⁇
  • 00278 transfer chamber 2 opens an inert gas supply line 11 and 00279 an evacuation line 12. In the evacuation line
  • 00280 12 is a pressure control valve 14, which is one
  • the pressure is preferably in the transfer chamber 2
  • 00301 can be between 1 and 500 sccm. Furthermore, the
  • 00312 supply line 11 flowing inert gas stream set.
  • the 00313 constant gas flow is here also 100 to 500

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un procédé et un dispositif pour traiter des substrats semi-conducteurs. Selon ce procédé, les substrats semi-conducteurs, en particulier non revêtus, sont acheminés dans une installation de traitement par un sas de chargement (1) adjacent à une chambre de transfert (2), depuis laquelle une pluralité de chambres de traitement (3, 4, 5) peuvent ensuite être chargées avec les substrats semi-conducteurs à traiter. A cet effet, l'air présent dans la chambre de transfert (2) et dans la chambre de traitement (3) est évacué, puis une porte de liaison (7) située entre la chambre de transfert (2) et la chambre de traitement (3) est ouverte. Selon l'invention, pour améliorer ce système, un processus à basse pression ou à pression atmosphérique est effectué dans au moins une des chambres de traitement (4) et, avant l'ouverture de la porte de liaison (8) associée à cette chambre de traitement (4), la chambre de transfert (2) est remplie d'un gaz inerte, une différence de pression prédéterminée étant maintenue entre la chambre de transfert et la chambre de traitement.
EP01994794A 2000-12-23 2001-12-15 Procede et dispositif pour traiter des substrats semi-conducteurs Withdrawn EP1344243A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10064943 2000-12-23
DE10064943 2000-12-23
DE10159702A DE10159702A1 (de) 2000-12-23 2001-12-05 Verfahren und Vorrichtung zur Bearbeitung von Halbleitersubstraten
DE10159702 2001-12-05
PCT/EP2001/014832 WO2002052617A1 (fr) 2000-12-23 2001-12-15 Procede et dispositif pour traiter des substrats semi-conducteurs

Publications (1)

Publication Number Publication Date
EP1344243A1 true EP1344243A1 (fr) 2003-09-17

Family

ID=26008087

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01994794A Withdrawn EP1344243A1 (fr) 2000-12-23 2001-12-15 Procede et dispositif pour traiter des substrats semi-conducteurs

Country Status (4)

Country Link
US (1) US6908838B2 (fr)
EP (1) EP1344243A1 (fr)
JP (1) JP2004516678A (fr)
WO (1) WO2002052617A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521089B2 (en) * 2002-06-13 2009-04-21 Tokyo Electron Limited Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers
US7368368B2 (en) 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
TW200709936A (en) * 2005-07-13 2007-03-16 Dimatix Inc Fluid deposition cluster tool
US20080050889A1 (en) * 2006-08-24 2008-02-28 Applied Materials, Inc. Hotwall reactor and method for reducing particle formation in GaN MOCVD
US20090029033A1 (en) * 2007-07-27 2009-01-29 Joseph Chou Method of manufacturing thin-film based PV modules
US20100236478A1 (en) * 2007-09-03 2010-09-23 Tokyo Electron Limited Vacuum processing system
CN101802254B (zh) 2007-10-11 2013-11-27 瓦伦斯处理设备公司 化学气相沉积反应器
JP4931902B2 (ja) * 2008-12-26 2012-05-16 東京エレクトロン株式会社 処理方法および処理システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900001666B1 (ko) * 1985-07-19 1990-03-17 후지쓰가부시끼가이샤 화합물 반도체의 에피택셜층 성장용의 화학적 유기 금속 기상 성장장치
US4985281A (en) * 1988-08-22 1991-01-15 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition
EP0408216A3 (en) * 1989-07-11 1991-09-18 Hitachi, Ltd. Method for processing wafers and producing semiconductor devices and apparatus for producing the same
JPH03193877A (ja) * 1989-12-21 1991-08-23 Matsushita Electric Ind Co Ltd 半導体製造装置及び半導体装置の製造方法
JP3268394B2 (ja) * 1992-03-11 2002-03-25 東京エレクトロン株式会社 処理方法
JPH0758093A (ja) * 1993-08-17 1995-03-03 Kokusai Electric Co Ltd ロードロック装置のガス置換方法及びその装置
JPH10144757A (ja) * 1996-11-08 1998-05-29 Dainippon Screen Mfg Co Ltd 基板処理システム
JP3967424B2 (ja) * 1997-04-30 2007-08-29 東京エレクトロン株式会社 真空処理装置及び圧力調整方法
CA2306384A1 (fr) * 1997-10-14 1999-04-22 Patterning Technologies Limited Procede de formation d'un dispositif electronique
US6376387B2 (en) * 1999-07-09 2002-04-23 Applied Materials, Inc. Method of sealing an epitaxial silicon layer on a substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO02052617A1 *

Also Published As

Publication number Publication date
US6908838B2 (en) 2005-06-21
WO2002052617B1 (fr) 2002-09-06
US20040058464A1 (en) 2004-03-25
WO2002052617A1 (fr) 2002-07-04
JP2004516678A (ja) 2004-06-03

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