EP1338039A1 - Procede de production d'un contact par effet tunnel, ainsi que dispositif comportant des moyens destines a produire un contact par effet tunnel - Google Patents

Procede de production d'un contact par effet tunnel, ainsi que dispositif comportant des moyens destines a produire un contact par effet tunnel

Info

Publication number
EP1338039A1
EP1338039A1 EP01999007A EP01999007A EP1338039A1 EP 1338039 A1 EP1338039 A1 EP 1338039A1 EP 01999007 A EP01999007 A EP 01999007A EP 01999007 A EP01999007 A EP 01999007A EP 1338039 A1 EP1338039 A1 EP 1338039A1
Authority
EP
European Patent Office
Prior art keywords
ferroelectric
electrodes
ferroelectric material
layer
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01999007A
Other languages
German (de)
English (en)
Inventor
Hermann Kohlstedt
Julio Rodriguez Contreras
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Publication of EP1338039A1 publication Critical patent/EP1338039A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Definitions

  • Method for producing a tunnel contact and device comprising means for producing a tunnel contact
  • the invention relates to a method for producing a tunnel contact and a device comprising means for producing a tunnel contact.
  • Ferroelectric materials are becoming increasingly important in the semiconductor industry, among others. Non-volatile, ferroelectric memory elements are independent of power, can be programmed with a low voltage, have a short access time and also consume less energy than conventional memory elements. Ferroelectric materials include ferroelectric, dielectric connections, inter alia, with a perovskite structure, for example lead zirconate titanate PbZr ⁇ - x Ti x 0 3 (PZT), barium strontium titanate BaSr ⁇ _ x Ti x 0 3 (BST), lead lanthanum zirconate titanate Pb ⁇ - x La x (Zr !
  • Ferroelectrics have a spontaneous electrical polarization below a critical temperature, which can be folded over into another stable position by applying an external electrical field.
  • ferroelectric connections e.g. B. in non-volatile memory chips (FeRAMs) and pyroelectric detectors, ferroelectric layers with layer thicknesses of 20 nm and above used to keep leakage currents low.
  • Metal layers e.g. Pt
  • a tunnel current can be demonstrated by measuring the current-voltage characteristic.
  • a tunnel current shows a parabolic curve when the current-voltage characteristic (dV / dl) is first derived from V.
  • the measurement of the temperature dependence of the tunnel resistance provides additional information. Theoretically, the tunnel resistance only changes by a few percent between 300 K and 10 K.
  • the methods and devices for signal transmission and evaluation known from the prior art have a relatively high response time and a low sensitivity.
  • the object is achieved according to the invention with the features specified in the characterizing part of claim 1. Furthermore, the problem is solved on the basis of the preamble of claim 11 according to the invention with the features specified in the characterizing part of claim 11. With the method and the device according to the invention, it is now possible to achieve fast signal transmission and signal evaluation. If the layer thickness of the ferroelectric is reduced, a noticeable tunnel current begins to flow below a critical layer thickness, which is dependent on the material and temperature. This critical layer thickness can be in the range around 6 nm. The tunnel current through a ferroelectric tunnel contact causes a voltage drop across the component in which the ferroelectric tunnel contact is used.
  • the current-voltage characteristic of a ferroelectric tunnel contact is asymmetrical. It is therefore possible to use the current-voltage characteristic to measure whether the state is logic 1 or 0. To do this, a current is allowed to flow alternately in the positive and negative current directions. Since the current-voltage characteristic is asymmetrical, the magnitude of the voltage can be used to determine the logical state of the component. This method and the device allow, for example, a non-destructive reading of information. The destructive selection of information z. Currently a major problem with FeRAMs.
  • the maximum voltage drop across the sample is set so that the domain migration is minimized, ie E c is not reached in any case. Since both directions of tension are used, the problem of fatigue and imprint is also reduced.
  • a non-volatile memory can also be built up.
  • the state of polarization can be changed by a short current or voltage pulse. How the information is changed depends on the current direction and the polarization state in which the component was previously.
  • the current pulse must be high enough to reach at least the voltage ⁇ V C.
  • the length of the pulse must also be so large that the component can be switched. This is the enrollment process.
  • the process is faster than that of conventional FeRAM capacitors due to the low layer thicknesses.
  • the method and the device are also suitable, for example, for the detection of electromagnetic radiation, as IR detectors or also for constructing a heterodyne receiver, within a ferroelectric field effect transistor or for use in displays.
  • Fig. 1 Cross section of ferroelectric tunnel contact
  • Fig. 2 Current-voltage characteristic of a ferroelectric tunnel contact
  • Fig. 3 Basic circuit with a ferroelectric tunnel contact, which serves as a detector
  • FIG. 1 The cross section of a ferroelectric tunnel contact shown in FIG. 1 shows two conductive electrodes (1 and 3) and an intermediate layer (2) made of ferroelectric material which produces the tunnel contact.
  • Figure 2 shows the current-voltage characteristic of a ferroelectric tunnel contact, which has an asymmetrical profile.
  • This current-voltage characteristic curve can be used to determine whether the component is in state 0 or 1. To do this, a current is allowed to flow alternately in the positive and negative current directions. Since the current-voltage characteristic is asymmetrical, the amount of the voltage can be used to determine which logic Condition of the component. The amount of voltage can be determined in the area of the dashed line and the logical state of the component and thus an evaluation of the information can be derived from this.
  • the arrows a) and b) pointing up and down in the Y direction indicate the area in which the coercive field strength can be measured.
  • the markings -Vc and + Vc indicated on the abscissa X denote the critical voltage at which a clear jump in current can be observed.
  • FIG. 3 A basic circuit is described in FIG. 3, in which a ferroelectric tunnel contact serves as a detector.
  • the incident radiation (hv) causes a change in the tunnel current and thus a change in the resistance of the ferroelectric tunnel contact (4).
  • This change in resistance can be detected with the aid of an amplifier (5) and a voltmeter (6).
  • Power is supplied by a power source (7).
  • ferroelectric materials ferroelectric niobit crystals with a tungsten-bronze structure of the formula PbNb 2 0 6 with K x W0 3 or Na x W0 3 with X ⁇ 1, water-soluble crystals such as, for. B. KH 2 P0 4 - (KDP) family or (NH 2 CH 2 C00H) 3 -H 2 S0 4 - (TGS) family, ferroelectric crystals such. B.
  • polymers eg [CH 2 CF 2 ] n with n ⁇ 1
  • Various deposition methods can be used to produce a ferroelectric layer on the surface of the conductive electrodes. Examples include sputtering, pulsed laser deposition (PLD), molecular beam epitaxy (MBE), chemical solution deposition (CSD) or metal organic chemical vapor deposition (MOVD).
  • PLD pulsed laser deposition
  • MBE molecular beam epitaxy
  • CSSD chemical solution deposition
  • MOVD metal organic chemical vapor deposition
  • the flow of the tunnel current and thus the generation of the tunnel contact depends on the ferroelectric materials used and the specifically set layer thicknesses. Layer thicknesses in a range from 0.1 to 1000 nm are possible. Layer thicknesses from 0.3 nm to 20 nm are particularly preferred. Layer thicknesses of 4, 5 and 6 nm are possible. Layer thicknesses of 7, 8, 9 and 10 are also suitable nm.
  • Electrodes made of conductive oxide or metal as well as semiconductors and superconductors are suitable as conductive electrodes.
  • electrodes made of platinum, aluminum, iridium, rhodium or ruthenium are used.
  • Electrodes made of Ir0 2 , indium tin oxide (In 2 Sn 2 0 5 ), Rh0 2 , Mo0 3 , Ru0 2 , SrRu0 3 can be mentioned as examples.
  • the layer thickness of the electrodes depends on the ferroelectric materials used. Layer thicknesses in the range from 10 to 80 nm are preferred. Layer thicknesses of 20, 40, 50 and 60 nm are particularly preferred.
  • the inventive design of the method according to claim 1 with electrodes, which are separated from each other by ferroelectric material through which a tunnel current flows, causes a tunnel contact to be made by using two effects, which is faster and more sensitive than conventional methods and devices Signal transmission leads.
  • the first effect is based on the generation of a tunnel current by selection of suitable materials and their respective layer thickness, which prevent the flow of the enable current flow.
  • the second effect is based on the use of ferroelectric materials, which react to a reversal of the polarization when exposed to an electrical or electromagnetic field. This rapid reversal of the polarization (approx. 1-2 nanoseconds) leads to a change in the tunnel current and has e.g. B. compared to memory elements the advantage that the current / signal transmission is much faster and more sensitive. Improved data storage and a method with a very high switching frequency can be achieved.
  • the advantageous embodiment of the method according to claim 2 with a layer of ferroelectric material, the layer thickness being set so that a tunnel current can flow, has the effect that the flow of a tunnel current is only made possible with the aid of the layer thickness.
  • the material used and the layer thickness that is set are closely related.
  • the layer thickness of the ferroelectric material affects the speed at which the polarization flaps. The thinner the layer, the faster the polarization flips, and the faster signal transmission or signal evaluation can take place.
  • ferroelectric material comprising compounds with a perovskite structure, ferroelectric niobate crystals with a tungsten-bronze structure, water-soluble and ferroelectric crystals and organic ferroelectrics are used.
  • ferroelectric material comprising compounds of PbZr ⁇ _ x Ti x 0 3 (PZT) with X 6 [0.1], BaSr ! - x Ti x 0 3 (BST) with X 6 [0.1], Pb ⁇ - x La x (Zr!
  • electrodes made of conductive oxide or metal or, for example, electrodes made of platinum, aluminum, iridium, rhodium or ruthenium or electrodes with compounds made of Ir0 2 , In 2 Sn 2 0 5 , Rh0 2 , Mo0 3 , Ru0 2 or SrRu0 3 can be used, it becomes possible to adapt the process to the different requirements depending on the area of application.
  • the advantageous embodiment of the method according to claim 8, in which any number of alternating layers of electrodes and ferroelectric layers are used, has the effect that the series connection of the ferroelectric material and the electrodes enables a larger signal application.
  • the change in polarization can take place, for example, within the planes spanned by the ferroelectric layers or perpendicular to them.
  • the embodiment of the method according to claim 9, in which exactly two electrodes are separated by a layer of ferroelectric material, has the advantage that only a small space is required for the use of this method and therefore the use for micro or nano -Applications particularly suitable.
  • ferroelectric material which consists of homogeneous material or a mixture of different ferroelectric and / or non-ferroelectric materials
  • ferroelectric material which consists of homogeneous material or a mixture of different ferroelectric and / or non-ferroelectric materials
  • Both ferroelectric materials and non-ferroelectric materials that develop ferroelectric properties only when mixed can be used.
  • the device according to the invention which comprises electrodes which are separated from one another by ferroelectric material, makes it possible for a tunnel contact to be produced by using two effects, which leads to faster and more sensitive signal transmission and signal evaluation than conventional devices ,
  • the first effect is based on the generation of a tunnel current by selection of suitable materials and their respective layer thickness, which allow the tunnel current to flow.
  • the second effect is based on the use of ferroelectric materials, which react to a reversal of the polarization when exposed to an electrical or electromagnetic field.
  • This rapid flipping of the polarization leads to a change in the tunnel current and has e.g. B. compared to memory elements the advantage that the current / signal transmission is much faster and more sensitive. Improved data storage and a very high switching frequency can be achieved.
  • the layer thickness of the ferroelectric material enables the flow of a tunnel current
  • the selection of the ferroelectric material and the variation of the layer thickness make it possible to increase the speed at which the polarization is reversed influence.
  • the thinner the layer the faster the polarization flips and the faster signal transmission or signal evaluation can take place.
  • the polarization can be reversed very quickly and thus very fast information transmission and signal acquisition.
  • This response time is, for example, in the nano-second range.
  • ferroelectric material comprising compounds with a perovskite structure, ferroelectric niobate crystals with a tungsten-bronze structure, water-soluble and ferroelectric crystals and organic ferroelectrics, makes it possible for each optimal conditions can be created according to the intended use or area of application using the materials that can be used. Both the temperature and the layer thickness influence the polarization behavior, so that some materials are particularly suitable for certain conditions. Compounds with a perovskite structure are suitable, for example, for use in a wide temperature range from 4 K to 700 K.
  • the electrodes consist of conductive oxide or metal or, for example, of platinum, aluminum, iridium, rhodium or ruthenium or of compounds with Ir0 2 , In 2 Sn 2 0 5 , Rh0 2 , Mo0 3 , Ru0 2 or SrRu0 3 , it becomes possible to adapt the device to the different requirements depending on the area of application.
  • the series connection of the ferroelectric material and the electrodes enables a larger signal application.
  • the change in polarization can take place, for example, within the planes spanned by the ferroelectric layers or perpendicular to them.
  • the embodiment of the device according to claim 21, in which exactly two electrodes are separated by a layer of ferroelectric material, makes it possible that only a small space is required for the use of this method and therefore the
  • the embodiment of the device according to claim 22, which is characterized by a homogeneous layer of ferroelectric material or a layer consisting of a mixture of ferroelectric and / or non-ferroelectric material, has the effect that different ferroelectric properties can be generated with the aid of the material variations. Both ferroelectric materials and non-ferroelectric materials that develop ferroelectric properties only when mixed can be used.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

Procédé de production d'un contact par effet tunnel, ainsi que dispositif comportant des moyens destinés à produire un contact par effet tunnel. Les matières ferroélectriques sont utilisées entre autres dans l'industrie des semi-conducteurs. Le procédé et le dispositif selon la présente invention reposent sur l'utilisation de matières ferroélectriques pour la production d'un contact par effet tunnel. Par rapport aux procédés et dispositifs classiques, le procédé et le dispositif selon la présente invention permettent une évaluation plus rapide et plus sensible des signaux électriques ou électromagnétiques.
EP01999007A 2000-11-29 2001-11-23 Procede de production d'un contact par effet tunnel, ainsi que dispositif comportant des moyens destines a produire un contact par effet tunnel Withdrawn EP1338039A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10059357 2000-11-29
DE10059357A DE10059357A1 (de) 2000-11-29 2000-11-29 Verfahren zur Erzeugung eines Tunnelkontaktes sowie Vorrichtung umfassend Mittel zur Erzeugung eines Tunnelkontaktes
PCT/DE2001/004447 WO2002045172A1 (fr) 2000-11-29 2001-11-23 Procede de production d'un contact par effet tunnel, ainsi que dispositif comportant des moyens destines a produire un contact par effet tunnel

Publications (1)

Publication Number Publication Date
EP1338039A1 true EP1338039A1 (fr) 2003-08-27

Family

ID=7665171

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01999007A Withdrawn EP1338039A1 (fr) 2000-11-29 2001-11-23 Procede de production d'un contact par effet tunnel, ainsi que dispositif comportant des moyens destines a produire un contact par effet tunnel

Country Status (3)

Country Link
EP (1) EP1338039A1 (fr)
DE (1) DE10059357A1 (fr)
WO (1) WO2002045172A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10245554B4 (de) * 2002-09-30 2008-04-10 Qimonda Ag Nanopartikel als Ladungsträgersenke in resistiven Speicherelementen
DE10250357A1 (de) * 2002-10-29 2004-05-19 Infineon Technologies Ag Ferroelektrische Speicherzelle
DE10303316A1 (de) * 2003-01-28 2004-08-12 Forschungszentrum Jülich GmbH Schneller remanenter Speicher
US7759713B2 (en) 2006-03-06 2010-07-20 Ut-Battelle, Llc Ferroelectric tunneling element and memory applications which utilize the tunneling element
FR2946788B1 (fr) * 2009-06-11 2016-11-11 Thales Sa Dispositif a resistance ajustable.
US20190245056A1 (en) * 2018-02-02 2019-08-08 International Business Machines Corporation Ferroelectric devices free of extended grain boundaries

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1007865A3 (nl) * 1993-12-10 1995-11-07 Philips Electronics Nv Tunnel schakelelement met verschillende blijvende schakeltoestanden.
US6548843B2 (en) * 1998-11-12 2003-04-15 International Business Machines Corporation Ferroelectric storage read-write memory

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0245172A1 *

Also Published As

Publication number Publication date
WO2002045172A1 (fr) 2002-06-06
DE10059357A1 (de) 2002-06-13

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