FR2946788B1 - Dispositif a resistance ajustable. - Google Patents

Dispositif a resistance ajustable.

Info

Publication number
FR2946788B1
FR2946788B1 FR0902845A FR0902845A FR2946788B1 FR 2946788 B1 FR2946788 B1 FR 2946788B1 FR 0902845 A FR0902845 A FR 0902845A FR 0902845 A FR0902845 A FR 0902845A FR 2946788 B1 FR2946788 B1 FR 2946788B1
Authority
FR
France
Prior art keywords
adjustable resistance
adjustable
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0902845A
Other languages
English (en)
Other versions
FR2946788A1 (fr
Inventor
Manuel Bibes
Agnes Barthelemy
Julie Grollier
Jean Claude Mage
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Thales SA
Universite Paris Saclay
Original Assignee
Centre National de la Recherche Scientifique CNRS
Thales SA
Universite Paris Sud Paris 11
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Thales SA, Universite Paris Sud Paris 11 filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR0902845A priority Critical patent/FR2946788B1/fr
Priority to PCT/EP2010/058149 priority patent/WO2010142762A1/fr
Publication of FR2946788A1 publication Critical patent/FR2946788A1/fr
Application granted granted Critical
Publication of FR2946788B1 publication Critical patent/FR2946788B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5657—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using ferroelectric storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Ceramic Engineering (AREA)
  • Neurology (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • Computational Linguistics (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
FR0902845A 2009-06-11 2009-06-11 Dispositif a resistance ajustable. Active FR2946788B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0902845A FR2946788B1 (fr) 2009-06-11 2009-06-11 Dispositif a resistance ajustable.
PCT/EP2010/058149 WO2010142762A1 (fr) 2009-06-11 2010-06-10 Dispositif ferroélectrique à résistance ajustable

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0902845A FR2946788B1 (fr) 2009-06-11 2009-06-11 Dispositif a resistance ajustable.

Publications (2)

Publication Number Publication Date
FR2946788A1 FR2946788A1 (fr) 2010-12-17
FR2946788B1 true FR2946788B1 (fr) 2016-11-11

Family

ID=41647171

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0902845A Active FR2946788B1 (fr) 2009-06-11 2009-06-11 Dispositif a resistance ajustable.

Country Status (2)

Country Link
FR (1) FR2946788B1 (fr)
WO (1) WO2010142762A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3003062B1 (fr) * 2013-03-05 2015-06-05 Univ Bordeaux 1 Organe a neurone artificiel et memristor
CN108154226B (zh) * 2016-12-06 2021-09-03 上海磁宇信息科技有限公司 一种使用模拟计算的神经网络芯片
FR3074337B1 (fr) 2017-11-30 2021-04-09 Thales Sa Reseau neuromimetique et procede de fabrication associe
GB2576174B (en) 2018-08-07 2021-06-16 Ip2Ipo Innovations Ltd Memory

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1007865A3 (nl) * 1993-12-10 1995-11-07 Philips Electronics Nv Tunnel schakelelement met verschillende blijvende schakeltoestanden.
US6141241A (en) * 1998-06-23 2000-10-31 Energy Conversion Devices, Inc. Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
US6548843B2 (en) * 1998-11-12 2003-04-15 International Business Machines Corporation Ferroelectric storage read-write memory
DE10059357A1 (de) * 2000-11-29 2002-06-13 Forschungszentrum Juelich Gmbh Verfahren zur Erzeugung eines Tunnelkontaktes sowie Vorrichtung umfassend Mittel zur Erzeugung eines Tunnelkontaktes
US6806526B2 (en) * 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
DE10250357A1 (de) * 2002-10-29 2004-05-19 Infineon Technologies Ag Ferroelektrische Speicherzelle
DE10303316A1 (de) * 2003-01-28 2004-08-12 Forschungszentrum Jülich GmbH Schneller remanenter Speicher

Also Published As

Publication number Publication date
FR2946788A1 (fr) 2010-12-17
WO2010142762A1 (fr) 2010-12-16

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Owner name: UNIVERSITE PARIS-SACLAY, FR

Effective date: 20231221

Owner name: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (, FR

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Owner name: THALES, FR

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