EP1283528B1 - Résistance électrique de basse impédance et procédé de fabrication - Google Patents

Résistance électrique de basse impédance et procédé de fabrication Download PDF

Info

Publication number
EP1283528B1
EP1283528B1 EP02015940A EP02015940A EP1283528B1 EP 1283528 B1 EP1283528 B1 EP 1283528B1 EP 02015940 A EP02015940 A EP 02015940A EP 02015940 A EP02015940 A EP 02015940A EP 1283528 B1 EP1283528 B1 EP 1283528B1
Authority
EP
European Patent Office
Prior art keywords
resistors
layer
strips
film
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP02015940A
Other languages
German (de)
English (en)
Other versions
EP1283528A3 (fr
EP1283528A2 (fr
Inventor
Ullrich Dr. Hetzler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IsabellenHuette Heusler GmbH and Co KG
Original Assignee
IsabellenHuette Heusler GmbH and Co KG
Isabellen Huette GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2001139323 external-priority patent/DE10139323C1/de
Priority claimed from DE2001153273 external-priority patent/DE10153273A1/de
Application filed by IsabellenHuette Heusler GmbH and Co KG, Isabellen Huette GmbH filed Critical IsabellenHuette Heusler GmbH and Co KG
Publication of EP1283528A2 publication Critical patent/EP1283528A2/fr
Publication of EP1283528A3 publication Critical patent/EP1283528A3/fr
Application granted granted Critical
Publication of EP1283528B1 publication Critical patent/EP1283528B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/003—Apparatus or processes specially adapted for manufacturing resistors using lithography, e.g. photolithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/003—Thick film resistors

Definitions

  • the invention relates to a low-resistance electrical resistor and a method for its production according to the preamble of the independent claims. In particular acts low-resistance precision resistors for current measurement purposes in SMD or chip design.
  • the separation of the resistors can be done with a laser cutting machine or preferably by breaking the adhesive film after double-sided Etching through the metal layers along the intended Separation lines are made.
  • This known method is relative consuming. Above all, however, it is hardly possible thanks to this necessary etching resistors with precisely defined resistance values to create. It is particularly difficult to apply the alloy foil galvanized connection contacts by etching structure without the underlying alloy metal attack, with the precision also by the for the etching Typical undefined shape of the end faces of the connection contacts is affected, which is not exactly perpendicular to Surface, but more or less concave down to the alloy surface run.
  • connection contacts are used to manufacture SMD measuring resistors a bonded to a substrate, structured in the usual way Resistance foil if necessary after galvanic pre-tinning the connection areas as a paste using the screen printing process applied to the film and then melted into compact "beads". The desired precise resistance value can also be found here can only be achieved by subsequent adjustment.
  • These resistors are separated by stamping, as is also the case with comparable other known components is common.
  • the invention has for its object a method for Specify the manufacture of precision resistors of the type under consideration, that is easier than comparable known methods and in particular the formation of the connection contacts without etching allows.
  • the invention also provides a low-resistance resistor with the features of claim 1 provided.
  • precision resistances can be done with a few simple operations be made in the milliohm range that with resistance tolerances of max. ⁇ 5% no subsequent Require adjustment.
  • connection contacts nor the Alloy areas have to be etched, with the disadvantages the etching structuring, namely the Formation of leaking, non-vertical etching flanks leading to large fluctuations in the resistance value and poor reproducibility to lead.
  • the second requirement for the production according to the invention is more precise Resistance is the creation of a defined width. This is preferably done by sawing the galvanized resistance layer reached.
  • Sawing results in much higher accuracy and reproducibility of the resistances than with other separation methods such as etching, stamping and z. B. also in itself possible use of lasers. In addition, by sawing is the number that can be produced for a given usable area Resistances are maximized.
  • the process is suitable for for the production of extremely low-resistance Resistors in the range of about 0.5, for example Large quantities of m ⁇ to 5 m ⁇ , but resistors can also be used with even lower or higher resistance values be, e.g. B. 0.01-50 m ⁇ . With a modified design with particularly thin resistance foils, the resistance value can also be easily raised, e.g. up to 100 m ⁇ .
  • the resistors are also flexible and can be almost any size depending on the desired load capacity or be made small. Since the manufactured according to the invention Resistance consists essentially only of metal and the organic used in the known methods mentioned Adhesive layer either completely eliminated or, if available, does not have to dissipate heat, it has the advantage of high temperature resistance and high resilience. In the for this resistance typical applications, it is sufficient to use the heat loss derived via the connection contacts, for example in a Circuit board, on the surface of which the resistors according the SMD technology.
  • a bare is in the first step rectangular sheet 1 made of a metallic resistance alloy covered with a photoresist layer 2, which in the Photolithography usual way through a photomask (not shown) can be exposed.
  • the sheet 1 can be practical Cases a usable area of z. B. have about 300 x 400 mm and be between 0.1 and 1 mm thick. It preferably exists made of one of the proven Cu-based resistance alloys such as z. B. CuMn12Ni or the like.
  • Mask serving structure consists of a multitude of themselves over the entire width or length of the upper one in the drawing Surface of the sheet 1 or at least the surface to be used extending parallel strip 2 ', as a rule the same width and same, over the entire length of the strip have constant mutual distances.
  • the photoresist layer 2 Before, after or simultaneously with the photolithographic Structuring the photoresist layer 2 is the bottom of the Sheet 1 covered with a protective film 3, which in the subsequent Galvanizing is a metallization of the sheet metal underside prevented.
  • the photoresist strips are in the process stage according to FIG. 1D) 2 'removed and replaced by protective lacquer.
  • the protective lacquer strips 5 can, for example, by hand Spatulas or squeegees can be applied. You prevent one Metallization of the areas between the copper strips 4 of the sheet 1 in a subsequent galvanic reinforcement the copper strip and later protect as well like the protective film 3, the surface of the alloy area of the finished resistance.
  • further copper can be galvanically applied to the copper strip 4 Copper to strengthen the contacts and / or an additional one Metal to be deposited.
  • tin 6 the copper surface is protected from tarnishing and that later soldering the resistor onto a circuit board or The like. Relieved. Form the strips 4 with the tin layer 6 the connection contacts of the individual resistors to be generated.
  • connection contacts provided sheet 1 longitudinally perpendicular to the Sheet surface and groups running perpendicular to each other separated from cutting planes.
  • the cutting planes of one of these both groups run parallel to the copper strips 4 and thus to one of the edges of the sheet 1 through the entire sheet and are each in the middle of one of the copper strips 4, the thereby being cut into two equal strips, along the arrows 7 in Fig. 1E) and in Fig. F).
  • Fig. F as the last or penultimate stage of the process the isolated resistance or one along the second group of cutting planes shown strips to be divided.
  • the cutting planes of the second group also run parallel to the other sheet edge through the entire sheet along the side edges of the individual resistors.
  • the single resistance created after the last process step is shown schematically (not to scale) in Fig. 2.
  • the finished resistor consists of the rectangular one Alloy sheet metal piece 1 ', at the opposite ends of which rectangular connection contacts 4 'and 4' 'with the tin layers 6 ', 6' 'are electroplated.
  • the by galvanic cutting of copper possibly in several layers are preferably relatively thick, i.a. for good Input and output of the current in or out of the alloy guarantee.
  • the thickness of the copper can be approximate 50-100 ⁇ m.
  • the resistance has the opposite Ends of flat end faces 9 of the connection contacts and the sheet metal piece 1 'itself, which is exactly perpendicular to the Align the sheet level with each other. The same applies to the two lateral end faces 8 of the contacts and the sheet metal piece 1'.
  • The is between the connection contacts Protective lacquer layer 5 ', while the surface facing away from the contacts of the resistance is still covered by the protective film 3 ' can be.
  • the modified resistor shown in Fig. 3 differs from the design according to FIG. 2 only in that instead of the relatively thick sheet metal piece covered with the protective film 3 ' 1 'a much thinner resistance film 11 has been used is that on a double-sided adhesive serving as a protective film Adhesive film 13 has been attached.
  • the resistance foil 11 whose thickness is less than 100 ⁇ m e.g. down to 20 ⁇ m is for the purpose of manageability, i.e. for mechanical Stabilization using the protective and adhesive film 13 been fixed on a substrate 18, for example can be a 0.5 mm thick aluminum sheet.
  • connection contacts 14 with the tin layers 16 and Protective lacquer layer 15 correspond to the embodiment according to FIG. 2, and also the manufacture of the modified resistor takes place essentially according to that described with reference to FIG. 1 Method with the proviso that instead of in the step of FIG. 1A of the relatively thick sheet 1 from the thin resistance film 11, the double-sided adhesive film 13 and the substrate 18 existing laminate is used, the adhesive film 13 and the substrate 18 can replace the protective film 3.
  • the values of the resistors produced in this way can typically in the order of 50 or 100 m ⁇ .

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Networks Using Active Elements (AREA)
  • Control Of Electrical Variables (AREA)
  • Non-Adjustable Resistors (AREA)
  • Details Of Resistors (AREA)

Claims (12)

  1. Résistance électrique de faible impédance, formée par une partie métallique (1', 11) plane, rectangulaire, réalisée dans un alliage pour résistances électriques, et des contacts de raccordement (4', 4", 14) sont déposés par électrolyse sur des extrémités opposées d'une surface principale de la partie métallique, les faces frontales (9) de la partie métallique (1', 11) et des contacts de raccordement (4', 4", 14) au niveau de ces extrémités et les faces frontales (8), adjacentes perpendiculairement à ces faces frontales (9), de la partie métallique (1', 11) et des contacts de raccordement (4', 4", 14) étant alignées respectivement les unes aux autres perpendiculairement au plan de la surface principale de la partie métallique (1', 11).
  2. Résistance selon la revendication 1, caractérisée en ce que sa valeur de résistance se situe entre environ 0,5 mΩ et environ 5,0 mΩ.
  3. Résistance selon la revendication 1 ou 2, caractérisée en ce que la partie métallique est une feuille (11), dont la face opposée aux contacts de raccordement (14) est fixée sur un substrat (18).
  4. Résistance selon la revendication 3, caractérisée en ce que la feuille (11) possède une épaisseur inférieure à 100 µm.
  5. Résistance selon la revendication 3 ou 4, caractérisée en ce que sa valeur de résistance est supérieure à 10 mΩ et de préférence supérieure à 50 mΩ.
  6. Procédé de fabrication de résistances électriques de faible impédance, dans lequel un métal, destiné à former des contacts de raccordement (4) pour une pluralité de résistances individuelles, est déposé par voie électrolytique sur des zones, définies par photolithographie, d'une couche formée par une tôle (1) ou une feuille (11) en alliage métallique pour résistances électriques, et la couche (1, 11) munie des contacts de raccordement (4) est sectionnée pour former les différentes résistances, caractérisé par les étapes :
    réalisation par photolithographie d'un masque de recouvrement, qui est formé par une pluralité de bandes (2') parallèles qui s'étendent à distances régulières les unes des autres sur une surface de la couche (1, 11) ;
    métallisation de la couche (1, 11) uniquement sur la surface portant le masque de recouvrement pour la précipitation du métal des contacts de raccordement sur les bandes de résistance disposées entre les bandes de masque (2') parallèles ; et
    sectionnement de la couche métallisée (1, 11) le long de groupes de plans de coupe, disposés perpendiculairement à la surface de ladite couche et perpendiculairement les uns aux autres, parmi lesquels les plans de coupe (7) sectionnent chacun l'une des bandes de contact de raccordement parallèlement à aux bandes de contact de raccordement (4), alors que les autres plans de coupe séparent les résistances les unes des autres au niveau de leurs bords transversaux aux bandes de contact de raccordement (4), la couche métallisée (1, 11) étant sciée pour séparer les résistances ou étant sectionnée par laser.
  7. Procédé selon la revendication 6, caractérisé en ce que la métallisation de la face arrière de la couche (1) est revêtue par une feuille de protection (3).
  8. Procédé selon la revendication 6 ou 7, caractérisé en ce que, après la précipitation du métal des contacts de raccordement, les bandes de masque (2') sont éliminées et sont remplacées par une couche de vernis de protection (5).
  9. Procédé selon l'une quelconque des revendications 6 à 8, caractérisé en ce qu'au moins une couche supplémentaire (6), réalisée dans le même métal ou dans un métal différent, est déposée par voie électrolytique sur les bandes de contact de raccordement (4) avant la séparation des résistances.
  10. Procédé selon l'une quelconque des revendications 6 à 9, caractérisé en ce que, pour former les bandes de contact de raccordement, on dépose du cuivre sur une tôle (1) ou une feuille (11) en alliage de cuivre et on galvanise les bandes de cuivre (4).
  11. Procédé selon l'une quelconque des revendications 6 à 10, caractérisé en ce que la longueur, la largeur et l'épaisseur des parties métalliques (1'), qui subsistent après la séparation des résistances, et la distance réciproque entre les contacts de raccordement (4', 4") subsistants sont définies pour des valeurs de résistance entre environ 0,1 mΩ et environ 5 mΩ.
  12. Procédé selon l'une quelconque des revendications 6 à 10, caractérisé en ce que le masque de recouvrement est réalisé sur une feuille d'une épaisseur inférieure à 100 µm, qui est réalisée dans l'alliage de la résistance et qui est rendue manipulable par fixation sur un substrat (18), et en ce que la longueur, la largeur et l'épaisseur des parties de feuille (11), qui subsistent après la séparation des résistances sont définies pour des valeurs de résistance entre environ 10 mΩ et environ 50 mΩ.
EP02015940A 2001-08-10 2002-07-17 Résistance électrique de basse impédance et procédé de fabrication Expired - Lifetime EP1283528B1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE2001139323 DE10139323C1 (de) 2001-08-10 2001-08-10 Niederohmiger elektrischer Widerstand und Verfahren zur Herstellung solcher Widerstände
DE10139323 2001-08-10
DE2001153273 DE10153273A1 (de) 2001-10-29 2001-10-29 Niederohmiger elektrischer Widerstand und Verfahren zur Herstellung solcher Widerstände
DE10153273 2001-10-29

Publications (3)

Publication Number Publication Date
EP1283528A2 EP1283528A2 (fr) 2003-02-12
EP1283528A3 EP1283528A3 (fr) 2003-07-16
EP1283528B1 true EP1283528B1 (fr) 2004-10-13

Family

ID=26009922

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02015940A Expired - Lifetime EP1283528B1 (fr) 2001-08-10 2002-07-17 Résistance électrique de basse impédance et procédé de fabrication

Country Status (4)

Country Link
EP (1) EP1283528B1 (fr)
AT (1) ATE279779T1 (fr)
DE (1) DE50201270D1 (fr)
ES (1) ES2229026T3 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10338041B3 (de) * 2003-08-19 2005-02-24 Isabellenhütte Heusler GmbH KG Elektrischer Widerstand und Verfahren zum Herstellen von Widerständen
US8242878B2 (en) 2008-09-05 2012-08-14 Vishay Dale Electronics, Inc. Resistor and method for making same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3296574A (en) * 1962-12-21 1967-01-03 Tassara Luigi Film resistors with multilayer terminals
DE3201434A1 (de) * 1982-01-19 1983-09-08 Siemens AG, 1000 Berlin und 8000 München Elektrisches bauelement in chip-bauweise
NL8302150A (nl) * 1982-06-16 1984-01-16 Nitto Electric Ind Co Uitgangsplaat voor een gedrukte schakeling met een weerstandslaag en werkwijze voor de vervaardiging daarvan.

Also Published As

Publication number Publication date
ES2229026T3 (es) 2005-04-16
ATE279779T1 (de) 2004-10-15
EP1283528A3 (fr) 2003-07-16
DE50201270D1 (de) 2004-11-18
EP1283528A2 (fr) 2003-02-12

Similar Documents

Publication Publication Date Title
DE4339551C1 (de) Widerstand in SMD-Bauweise und Verfahren zu seiner Herstellung sowie Leiterplatte mit solchem Widerstand
DE112006002516B4 (de) Chip-Widertand und Befestigungsstruktur für einen Chip-Widerstand
DE4310288B4 (de) Oberflächenmontierbarer Widerstand
DE1965546C3 (de) Halbleiterbauelement
EP1941520B1 (fr) Résistance, notamment résistance smd et procédé de production associé
DE2810054A1 (de) Elektronische schaltungsvorrichtung und verfahren zu deren herstellung
DE4412278A1 (de) Starre und flexible Bereiche aufweisende Leiterplatte
DE1514055C2 (de) Kühlvorrichtung mit mindestens zwei zueinander parallel verlaufenden Kühlkörpern, insbesondere für Diodenlaser
EP0046975A2 (fr) Réseau électrique et procédé pour sa fabrication
DE19953162A1 (de) Verfahren zum Herstellen von Thermistor-Chips
EP0193127A1 (fr) Circuit monté sur un film et procédé de fabrication
DE112009001287T5 (de) Widerstand
DE102004002030A1 (de) Verbundmaterial und Verfahren zu dessen Herstellung
EP1371273B1 (fr) Composite forme d'elements conducteurs plats
EP0538280A1 (fr) Assemblage d'un commutateur a rheostat incorpore.
EP0841668B1 (fr) Résistance électrique et son procédé de fabrication
DE2315711A1 (de) Verfahren zum kontaktieren von in einem halbleiterkoerper untergebrachten integrierten schaltungen mit hilfe eines ersten kontaktierungsrahmens
DE112013001486T5 (de) Chipwiderstand zur einbettung in eine leiterplatte und verfahren zu dessen herstellung
DE69837636T2 (de) Herstellungsverfahren von elektronischen Komponenten
EP3599636A1 (fr) Support de circuit en céramique et unité électronique
EP1313109A2 (fr) Résistance à montage en surface
DE102015112723A1 (de) Strommesswiderstand und Verfahren zum Herstellen desselben
DE3445690C2 (de) Verfahren zur Herstellung einer Trägerplatte für eine gedruckte Schaltung
EP1283528B1 (fr) Résistance électrique de basse impédance et procédé de fabrication
DE3545527A1 (de) Flexible elektrische verbindungsvorrichtung und verfahren zu ihrer herstellung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

17P Request for examination filed

Effective date: 20030728

AKX Designation fees paid

Designated state(s): AT DE ES FR GB IT

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RBV Designated contracting states (corrected)

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

RIC1 Information provided on ipc code assigned before grant

Ipc: 7H 01C 1/142 B

Ipc: 7H 01C 17/28 A

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20041013

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20041013

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20041013

Ref country code: IE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20041013

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: ISABELLENHUETTE HEUSLER GMBH & CO.KG

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: GERMAN

REF Corresponds to:

Ref document number: 50201270

Country of ref document: DE

Date of ref document: 20041118

Kind code of ref document: P

REG Reference to a national code

Ref country code: SE

Ref legal event code: TRGR

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)

Effective date: 20041220

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20050113

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20050113

REG Reference to a national code

Ref country code: ES

Ref legal event code: FG2A

Ref document number: 2229026

Country of ref document: ES

Kind code of ref document: T3

REG Reference to a national code

Ref country code: IE

Ref legal event code: FD4D

ET Fr: translation filed
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050717

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20050717

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050731

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050731

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20050714

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20060731

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20060731

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

BERE Be: lapsed

Owner name: ISABELLENHUTTE *HEUSLER G.M.B.H. & CO. K.G.

Effective date: 20050731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050313

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: ES

Payment date: 20090623

Year of fee payment: 8

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: CZ

Payment date: 20090616

Year of fee payment: 8

Ref country code: FI

Payment date: 20090615

Year of fee payment: 8

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SK

Payment date: 20090616

Year of fee payment: 8

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20090617

Year of fee payment: 8

Ref country code: SE

Payment date: 20090730

Year of fee payment: 8

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20090708

Year of fee payment: 8

REG Reference to a national code

Ref country code: NL

Ref legal event code: V1

Effective date: 20110201

REG Reference to a national code

Ref country code: SK

Ref legal event code: MM4A

Ref document number: E 33

Country of ref document: SK

Effective date: 20100717

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CZ

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100717

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100717

Ref country code: FI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100717

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20110201

Ref country code: SK

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100717

REG Reference to a national code

Ref country code: ES

Ref legal event code: FD2A

Effective date: 20110818

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100718

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100718

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: AT

Payment date: 20130722

Year of fee payment: 12

Ref country code: DE

Payment date: 20130904

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20130723

Year of fee payment: 12

Ref country code: FR

Payment date: 20130719

Year of fee payment: 12

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 50201270

Country of ref document: DE

REG Reference to a national code

Ref country code: AT

Ref legal event code: MM01

Ref document number: 279779

Country of ref document: AT

Kind code of ref document: T

Effective date: 20140717

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20140717

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20150331

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20150203

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 50201270

Country of ref document: DE

Effective date: 20150203

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140717

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140731

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140717