EP1230670A1 - Dispositif et procede de nettoyage de substrats - Google Patents

Dispositif et procede de nettoyage de substrats

Info

Publication number
EP1230670A1
EP1230670A1 EP00974406A EP00974406A EP1230670A1 EP 1230670 A1 EP1230670 A1 EP 1230670A1 EP 00974406 A EP00974406 A EP 00974406A EP 00974406 A EP00974406 A EP 00974406A EP 1230670 A1 EP1230670 A1 EP 1230670A1
Authority
EP
European Patent Office
Prior art keywords
treatment container
treatment
container
gas
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00974406A
Other languages
German (de)
English (en)
Inventor
Thomas Riedel
Klaus Wolke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Scp Us Inc
Original Assignee
Steag Microtech GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10007439A external-priority patent/DE10007439C2/de
Application filed by Steag Microtech GmbH filed Critical Steag Microtech GmbH
Publication of EP1230670A1 publication Critical patent/EP1230670A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Definitions

  • the present invention relates to an apparatus and a method for cleaning substrates, in particular semiconductor wafers
  • Another method which has a dry cleaning process uses gases containing O 2 or H 2 to remove fluorocarbon polymers from semiconductor wafers. Although there are no problems due to the components used, such dry cleaning processes are very time-consuming, resulting in leads to high costs
  • EP-A-0 867 924 discloses a method in which ozone gas is introduced into a water vapor atmosphere containing an additive in order to remove organic impurities from a semiconductor wafer.
  • Ozone is used to oxidize the impurity and the water vapor requires the oxidation process
  • the water vapor atmosphere is generated by heating and partially evaporating a water layer located below a wafer.
  • the water vapor atmosphere is saturated at its operating temperature, which is higher than the temperature of the wafer.Therefore, water vapor condenses on the wafers and forms it a layer of water forms on the surface of the wafers.
  • This layer of water reaches a thickness which prevents oxidation of the This is particularly the case if the ozone, OH radicals or other reactive components generated by interaction with the water do not come into contact with the impurities. This is particularly the case if the thickness of the water layer is greater than the lifetime the reactive component, such as ozone, times its diffusion constant in water
  • the present invention is based on the object of providing an apparatus and a method which, in a simple and inexpensive manner, enable the substrates to be cleaned quickly and effectively
  • this object is achieved by a device for cleaning substrates, in particular semiconductor wafers, with a treatment container for receiving at least one substrate, a cover for closing off the treatment container, a first introduction device for controllably introducing a reactive gas, and a second introduction for controllable purposes Introduction of a reaction between the reactive gas and an impurity which is to be removed from the substrate and which has a moisture-containing fluid and a control device for controlling the moisture concentration in the treatment container.
  • the device provides a closed system and enables precise control of the moisture concentration in the treatment container The moisture concentration can be matched to the particular cleaning process, as a result of which the formation of a liquid layer on the substrates to be cleaned, through which moisture is contained End fluid, controlled or can be completely prevented.
  • the first introduction device has a valve for controlling the amount of gas introduced, in order thereby to create a controlled process atmosphere.
  • the first introduction device preferably has an ozone generator, since ozone is particularly suitable and inexpensive, in particular for the oxidation and removal of organic contamination.
  • the second introduction device preferably has at least one valve for controlling the amount of fluid introduced.
  • the second introduction device preferably has a steam generator, in particular a water vapor generator, since water vapor is easy to produce and can be used as a fluid which promotes the reaction.
  • the moisture concentration and / or temperature of the steam can preferably be controlled.
  • the second introduction device has at least one liquid inlet nozzle.
  • the moisture concentration can also be adjusted in a simple manner.
  • the liquid inlet nozzle is preferably arranged above the substrates and directed towards them in order to enable the substrates to be rinsed.
  • the oxidized reaction products are rinsed off the wafers to expose the underlying, non-oxidized layers.
  • the device preferably has a heating device for heating the treatment container and / or the container contents, a controllable suction device and / or a controllable liquid outlet.
  • the device has a third introduction device for the controllable introduction of a further fluid, in particular a wetting agent
  • a further gas inlet device is preferably provided for the controllable introduction of a further gas, in particular an inert gas
  • a device for measuring the moisture concentration in the treatment container is provided for an exact setting of the moisture concentration. This enables the actual moisture concentration to be fed back to the control device, which can adapt its control parameters accordingly
  • the treatment container is pressure-tight and the device has a pressure control device which is suitable for controlling the pressure in the treatment container to an overpressure.
  • a pressure control device which is suitable for controlling the pressure in the treatment container to an overpressure.
  • the treatment container is preferably sealed pressure-tight by the cover in order to provide a good seal against the ambient atmosphere
  • the danger of ozone escaping from the treatment tank is prevented, which enables the use of highly concentrated ozone without endangering the environment
  • the use of highly concentrated ozone leads to an increased reaction rate, whereby the process times can be reduced even further
  • the object on which the invention is based is also achieved by a method for cleaning substrates, in particular semiconductor wafers, in a treatment container for receiving at least one substrate, with the following method steps: introducing a substrate into the container, closing off the treatment container, introducing a reactive gas and at least one that requires a reaction between the reactive gas and an impurity to be removed from the substrate, a moisture-containing fluid in the treatment container, and control of the moisture concentration in the treatment container.
  • the amount of the reactive gas and / or the fluid introduced is preferably controlled
  • a fluid is steam, in particular water vapor, the humidity and / or temperature of which is controlled.
  • the process atmosphere in the treatment container is preferably controlled so that essentially none Condensation of the steam occurs on the substrate.
  • the temperature of the substrate is kept at or above the temperature of the steam for this purpose.
  • the steam is preferably introduced into the treatment container before the reactive gas, in particular ozone
  • a fluid is preferably a liquid.
  • at least part of the liquid is drained off in order to maintain constant and controlled process conditions.
  • the amount of the drained liquid is preferably controlled for one good rinsing, the liquid is preferably sprayed onto the substrate from above. This process preferably takes place during short time intervals in order to prevent the uncontrolled formation of a liquid layer on the substrate.
  • the time intervals for spraying are preferably substantially shorter than pauses in between
  • the temperature of the treatment tank and / or the tank contents is preferably controlled.
  • the moisture content is preferably controlled on the basis of the amount of reactive gas introduced, the amount of fluid introduced and / or the temperature.
  • the temperature is controlled Moisture concentration measured in the treatment tank and regulated based on the measurement results
  • the reactive mixture is suctioned off after cleaning.
  • a further gas displacing the reactive gas in particular an inert gas
  • the treatment container is introduced
  • a treatment liquid is introduced into the treatment container after cleaning in order to further treat the substrate.
  • the pressure in the treatment tank is controlled, in particular controlled to an excess pressure, as a result of which higher steam temperatures can be achieved during the treatment. Furthermore, the pressure can be used to control the moisture concentration in the treatment tank.
  • Fig. 1 is a schematic representation of a first embodiment of the invention
  • Fig. 2 is a schematic representation of a second embodiment of the invention
  • 3 shows a schematic illustration of a further embodiment of the invention
  • Fig. 4 is a schematic representation of an alternative embodiment of the invention
  • 5 shows a schematic illustration of a further embodiment of the invention
  • 6 shows a schematic illustration of a further embodiment of the invention.
  • FIG. 1 shows a device for cleaning semiconductor wafers 2 with a treatment container 4.
  • a substrate receiving device 6 for holding the substrates 2 in an upright position.
  • the treatment container 4 has an upper part which is rectangular in cross section and a lower part which tapers conically downwards.
  • the treatment tank 4 has in the upper Area of the rectangular part a diffuser 8 for introducing water vapor into the treatment container 4.
  • the diffuser 8 is connected to a steam generator 10 via a corresponding line 9.
  • the diffuser 8 forms a ring which is adapted to the shape of the treatment basin and a uniform steam distribution in the container In this case, the diffuser 8 forms an inner diameter which is dimensioned sufficiently to allow the substrates 2 to be moved through
  • a winding device (not shown in more detail in FIG. 1) via which a winding liquid in the form of a finely divided mist is introduced into the treatment container 4.
  • the winding liquid is introduced in such a way that the substrates accommodated in the treatment container 4 are uniformly wound
  • a heating device 12 for heating the treatment container 4 and the substrates 2 is provided in an edge region of the treatment container 4.
  • the heating device 12 is arranged in such a way that it does not hinder movement of the substrates 2 into the treatment container 4 and out of the treatment container 4 an overflow 14 at its upper end
  • a diffuser 16 is provided for the introduction of ozone in the treatment container 4.
  • the diffuser 16 is connected to an ozone generator 18 via a line 17.
  • the diffuser 16 is in turn an Rmgdiffusor, which is adapted to the shape of the treatment container 4 and a uniform distribution of the ozone in the container 4 is permitted.
  • the diffuser is arranged in the lower region of the rectangular part of the container 4.
  • a cover 24, which closes the treatment container 4, is provided above the treatment container 4.
  • the cover 24 is able to hold the treatment container 4 in a completely closed position. seal against the environment in order to prevent leakage of the process components contained therein. In the fully closed position, the connection of the treatment container 4 to the overflow 14 is also closed.
  • a suction device for the controlled suction of the process components from the treatment container 4 is provided.
  • the suction device can be attached either to the treatment container 4 or to the cover 24.
  • dry wafers 2 for example coated or contaminated with photoresist
  • the lid 24 is then brought into a position closing the treatment container 4.
  • the inside of the treatment container 4 and the substrates 2 are heated via the heating device 12.
  • Steam with a certain humidity and temperature is generated in the steam generator 10.
  • the water vapor can optionally be a gaseous substance, such as nitrogen, and / or a liquid medium, such as. B. acetic acid, to be added to support the subsequent cleaning process of the wafer 2.
  • the water vapor generated in this way is introduced into the treatment container 4 in a controlled manner via the line 9 and the diffuser 8, i. H.
  • a certain amount of steam is introduced as a function of the container volume in order to achieve a certain moisture concentration in the container 4.
  • the inside of the treatment container 4 and the wafers 2 are heated to a temperature above the temperature of the steam in order to substantially prevent condensation of the steam on the wafer.
  • Ozone is generated in the ozone generator 18 and is introduced into the treatment container 4 in a controlled manner via the line 17 and the diffuser 16, ie the amount of ozone is controlled as a function of the amount of steam introduced.
  • the amount of ozone is controlled as a function of the amount of steam introduced.
  • the ozone gas reacts with the photoresist to be removed, whereby the water vapor prompts and accelerates this reaction.
  • the ozone oxidizes the photoresist and thereby enables detachment from the wafer 2
  • the suction device can be actuated in order to draw off a certain amount of the ozone gas / water vapor mixture in order to enable the supply of fresh ozone and water vapor. Controlled actuation of the suction device also allows the moisture concentration in the treatment container to be controlled by a specific one Amount of moist process atmosphere is suctioned off. The suction device is actuated so that a slight overpressure arises within the treatment container during the cleaning of the substrates, ie less of the mixture is suctioned off than was previously introduced
  • the spooling device (not shown) is also activated during certain time intervals in order to spool the substrates in the meantime, in particular in order to unwind the oxidized reaction products from the wafers. This ensures that the oxidized reaction products do not form a reaction barrier on the substrates, and that the ozone gas / water vapor mixture comes into contact with the underlying, non-oxidized layers.
  • a certain amount of rinsing liquid is introduced into the treatment container 4.
  • This liquid has an influence on the moisture concentration within the treatment container and is therefore in the control of the moisture concentration included
  • a controlled amount of the winding liquid accumulating at the bottom of the treatment container is preferably measured via the E after each winding process Inlet / outlet opening 20 drained
  • the winding processes take place in short time intervals during the cleaning process. These time intervals are essentially short zer than the pauses in between, since precise control of a liquid layer thickness on the substrate surface is not possible or is only possible with difficulty during the rinsing processes. Therefore, liquid layer thicknesses can quickly form on the substrates, which prevent the cleaning process.
  • the temperature of the pool or the pool contents is controlled via the heating device 12 in order to control the process atmosphere, in particular the moisture concentration in the tank.
  • the ozone gas / water vapor mixture is sucked out of the treatment container 4 via the suction device.
  • the treatment container 4 is flooded with an inert gas, such as nitrogen, via a further diffuser, not shown, in order to completely displace the ozone gas / water vapor mixture from the treatment container 4.
  • an inert gas such as nitrogen
  • the nitrogen could also be introduced via the ozone gas diffuser 16, the diffuser 16 then still being connected to a nitrogen source.
  • a rinsing liquid such as deionized water
  • the water flows into the overflow 14 and is discharged from there.
  • the water is then drained off and the wafers are dried.
  • the draining of the water can be carried out according to the marangony effect, for example by using a surface tension of the water. sers reducing fluid is applied to the water surface while the water is drained
  • the cleaning device 100 in turn has a treatment container 104 with wafer receptacles 106.
  • a diffuser 108 is provided in a lower, tapering part of the treatment container 104, which diffuser 108 is integrated with a steam generator 110 in the treatment container 104 is connected
  • a heating device 112 is provided for heating the treatment container 104 and the substrates 102.
  • the treatment container 104 in turn has an overflow 114 in an upper region of the treatment container 104, a diffuser 116 for introducing ozone is arranged, which is connected to an ozone generator 118 via a line 117.
  • the diffuser 116 is located in a lateral region of the treatment container 104, specifically on one of the heating devices tung 1 12 opposite side
  • an inlet / outlet opening 120 for rinsing liquid such as deionized water
  • the opening 120 is connected in a suitable manner to a source of deionized water.
  • a cover 124 closes the treatment container 104 and seals it from the surroundings
  • the operation of the device 100 is essentially the same as the operation of the device 1 according to the first exemplary embodiment.
  • the main difference between the devices 1 and 100 lies in the arrangement of the elements, in particular the integration of the steam generator in the treatment container 104
  • FIG. 3 shows a further embodiment of a cleaning device 200 for semiconductor wafers 202.
  • the cleaning device 200 has a treatment container 204, which is constructed from an outer basin 205 and an inner basin 206.
  • the outer basin 205 is at least partially filled with a liquid 207, which The inner basin 206 is suitably held within the outer basin in order to prevent the inner basin 206 from floating in the liquid 207
  • the inner basin 206 has an upper part which is rectangular in cross section and a lower part which tapers downwards in a pointed manner. Holding devices (not shown in more detail) are provided in the treatment basin 206 for receiving the substrates 202.
  • a tub 210 is provided in the lower region of the rectangular part in the basin 206, which has an inlet / outlet opening (not shown).
  • a diffuser 212 for introducing a reactive gas, such as ozone, into the treatment tank 206 is provided below the trough.
  • the diffuser 212 is in turn an annular diffuser, but can have any suitable shape that provides a uniform introduction made possible by ozone
  • a fluid inlet / outlet opening not shown
  • the treatment basin 206 is closed by a first, movable cover 214.
  • a steam diffuser 216 and a liquid spray device 218 are provided on the cover 214, which are connected in a suitable manner to a steam source or a liquid source
  • a further cover 220 is provided to close off the outer and inner treatment basin.
  • a suction line 224 extends through the covers 214 and 220 and extends into the inner treatment basin 206.
  • the suction line 224 is connected in a suitable manner to a suction device (not shown)
  • the operation of the device 200 is essentially the same as the operation of the device 1 according to the first exemplary embodiment
  • the cleaning device 300 has an essentially closed treatment container 304 with a rectangular cross section.
  • the treatment container 304 has an input / output opening 306 in a lower lateral region, which can be closed by a cover 308
  • the cover 308 is able to seal an interior 310 of the treatment container 304 from the surroundings.
  • a pressure lock not shown, is provided, via which a semiconductor wafer can be inserted or removed in the treatment container 304 - Maneuverability to change the pressure within the treatment container during loading and unloading. Pressure locks of this type are known in the art and are therefore not described in more detail
  • a rotatable wafer receptacle 312 with a horizontal support surface 314 for the semiconductor wafer 302 is provided in the lower region of the treatment container 304.
  • the receptacle in the support surface 314 has openings to which a bottom pressure can be applied to pull the semiconductor wafer 302 firmly against the support.
  • Lines 316 and 318 with respective control valves 320, 322 are connected to the treatment tank 304. Pressurized water vapor or pressurized ozone are introduced into the treatment tank 304 via the lines 316, 318.
  • a rinsing device 324 is provided, via which a rinsing liquid in the form of a finely divided mist is introduced into the treatment container 304.
  • An outlet line 326 with a control valve 328 is provided at the bottom of the treatment container 304.
  • a semiconductor wafer 302 is first inserted into the treatment container 304 via the opening 306 and received on the receptacle 312, fixed and heated in the receptacle 312 via a heating device (not shown). Subsequently, steam or ozone under pressure is introduced into the container 304 via the lines 316 and 318. Depending on the volume of the container, a certain amount of steam and ozone is introduced, so that a certain excess pressure and a certain moisture concentration in the container 304 are reached. In order to prevent condensation of the steam on the wafer and on the walls of the treatment container 304, these are heated to a temperature above the steam temperature.
  • the pressure within treatment tank 304 is measured and maintained at a set level. A portion of the ozone gas / water vapor mixture formed in the container 304 is sucked off via the line 326.
  • the spray device 324 is activated at certain time intervals to rinse the substrates.
  • a certain amount of rinsing liquid is introduced into the treatment container 4, and after each rinsing process an amount of rinsing liquid corresponding to the amount introduced is drained off via the line 326.
  • the wafer is rotated with the receiver 312 during the above process to prevent liquid from accumulating on the upward facing wafer surface
  • the device 300 according to FIG. 5 has a treatment container 304 for treating semiconductor wafers 302. / Output lock 330 is provided on an upper wall of the treatment container 304.
  • a wafer receptacle 312 with a contact surface 314 is provided in an interior 310 of the container 304.
  • the wafer receptacle 312 is on a side wall of the container 304 provided and has a substantially vertical contact surface 314.
  • the semiconductor wafers 302 are held in a vertical orientation on the receptacle 312 via vacuum openings (not shown) in the contact surface 314.
  • Lines 316, 318 with corresponding valves 320, 322 are again in turn for introducing water vapor or ozone, as well as e
  • a winding device 324 is provided in an upper region of the treatment container 304.
  • An outlet line 326 with a valve 328 is attached to the bottom of the treatment container 304
  • a further inlet line 336 with a valve 337 is provided.
  • the inlet line 336 serves for introducing acetic acid, which reacts the reaction of the ozone gas / water vapor mixture with the impurities to be removed on the semiconductor wafer 2 urges
  • the operation of the device 300 according to FIG. 5 is essentially the same as the operation of the device 300 according to FIG. 4, with acetic acid additionally being introduced into the treatment container 304 during the cleaning in order to demand the cleaning action, because the semiconductor wafer 302 is in a vertical orientation a turning and flinging of Liquid is not necessary during or after a rinsing process, since it flows off well from the wafer 302.
  • FIG. 6 shows a further embodiment of a device 400 according to the invention for cleaning semiconductor wafers 402.
  • the device 400 has an inner treatment container 404 which is received and held in an outer treatment container 406.
  • the inner treatment container 404 has a cover 408, while the outer treatment container 406 has a cover 410.
  • the covers 408 and 410 are movable relative to the treatment containers 404 and 406 to enable access to the respective treatment containers.
  • the cover 408 is also movable relative to the cover 410 along suitable guide rails 412 on the cover 410.
  • the covers can also be tilted relative to one another about corresponding tilting points.
  • the inner treatment tank 404 is controllably fillable with ozone gas and water vapor via inlet lines, not shown.
  • the inner treatment tank 404 is connected to another gas such as e.g. via suitable lines 414 attached to the cover 408.
  • An overpressure valve 416 is provided in each of the lines 414, which opens when the pressure in the treatment tank 404 falls below the pressure in a supply line 417.
  • the pressure in the supply line 417 is essentially ambient pressure, so that the pressure relief valves prevent a negative pressure from building up in the treatment container 404.
  • the inner treatment tank 404 can be filled with a liquid such as deionized water via an inlet / outlet system, not shown, as is shown schematically in FIG. 6.
  • outlet lines 420 are also arranged, in each of which pressure relief valves 421 are arranged, which open when the Pressure in a common outlet line 422 falls below the pressure in the treatment container 404.
  • the lines 420 are connected to a suction device such as a pump 424.
  • an ozone catalyst 426 such as a manganese oxide, is arranged in the outlet line 420 -Catalyst to convert ozone extracted from treatment tank 404 to oxygen
  • semiconductor wafers 402 are first loaded into the inner treatment container 404 when the covers 408, 410 are open, and are accommodated there in a holding device (not shown).
  • the covers 408 and 410 are then closed, the cover 408 being the inner one Treatment container 404 is essentially sealed, while the outer cover 410 does not necessarily have to seal the outer treatment container 406 in the outer treatment container 406, a suction device (not shown) is provided, which runs continuously in order to suck off gases located in the outer treatment container 406 and around to prevent gases from escaping from the inner or outer treatment container into the working environment
  • the inner treatment container 404 is filled with hot water in order to bring the wafers 402 up to or at least close to the process temperature. The water is then drained off. Of course, the wafers can also be brought up to the process temperature in other ways Close the treatment basin
  • water vapor is first introduced into the inner treatment container 404, which is controlled to a specific moisture concentration as described above.
  • Ozone is then introduced into the inner treatment container 404 by the pump 424 a certain amount of the ozone gas / water vapor mixture now located in the treatment container 404 is sucked off, and through the catalyst Analyzer 426 directed to convert the ozone in the mixture and thus render it harmless.
  • Vacuum causes the pressure relief valves 416 to open, via which ambient air or nitrogen is then passed into the treatment container in order to avoid the build-up of a vacuum in the treatment container
  • both the supply of water vapor and ozone is stopped.
  • the treatment container 404 is filled with water in order to displace the ozone gas / water vapor mixture from the treatment container 404.
  • the ozone gas / water vapor mixture is thereby passed through the lines 420, 422 derived from the inner treatment tank 404
  • the inner cover 408 is first raised so that the water in the inner treatment tank 404 can overflow into the outer treatment tank 406. From there, the water becomes derived in a suitable manner
  • any ozone gas residues which may be present in the inner treatment container 404 can escape into the outer treatment container 406, from which they are discharged via the continuously operating suction system. Only then is the outer cover 410 raised.
  • the water in the treatment container 404 is drained off , and the wafers are dried according to the Marangoni process as described above.
  • the treated wafers 402 are then removed from the treatment containers and new, untreated wafers are inserted
  • the amount of fluid pumped by the pump 424 is matched to the respective process conditions.
  • ozone gas / water vapor treatment essentially the Ozone gas / water vapor amount pumped out via the pump 424, which is introduced via the lines, not shown, in order to maintain a continuous flow through the treatment basin 404.
  • the same amount of fluid is pumped out via the pump 424 as water is introduced into the treatment container 404 in order to increase the local pressure in the treatment container 404, the lines 420 or the common outlet line 422 or the To avoid catalyst.
  • a feed line 417 with a pressure relief valve is provided in the exemplary embodiment shown in FIG. 6, via which a gas, such as air or nitrogen, is introduced into the treatment tank if the pressure in the treatment tank drops below the ambient pressure, it should be noted that the line is not absolutely necessary.
  • the pump 424 can also be controlled in a suitable manner. When controlling the pump volume of the pump, pressure losses in the catalytic converter and also the maximum flow rate of the catalytic converter must be taken into account.
  • a flushing device can be provided in the inner treatment container 404, for example in the exemplary embodiment according to FIG. 3, in order to flush the semiconductor wafers during the ozone gas / water vapor treatment. All in all, it should be mentioned that the respective elements of the different exemplary embodiments can, if possible, be combined with one another.
  • the cover could also extend over the overflow in order to cover it and thus seal the treatment container from the environment.
  • the suction device device could also be connected to the overflow.
  • the heating device could also be attached to the lid. In this case, it could cover a larger area without hindering the insertion and removal of the substrates.
  • the heating device could be installed outside the treatment container. In the case of the treatment container of FIGS. 4 and 5, it would also be possible to generate a negative pressure before the introduction of water vapor and ozone in order to enable the generation of a plasma for the partial dissolving or softening of the contaminants to be removed on the wafer.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un dispositif permettant un nettoyage rapide et efficace de substrats, notamment de plaquettes. Ce dispositif comprend un bac de traitement destiné à recevoir au moins un substrat, un couvercle permettant de fermer le bac de traitement, un premier dispositif d'introduction permettant d'introduire de façon contrôlée un gaz réactif, un deuxième dispositif d'introduction permettant d'introduire de façon contrôlée au moins un fluide favorisant une réaction entre le gaz réactif et une couche à éliminer du substrat et présentant une certaine humidité et enfin un dispositif de commande permettant de commander la concentration d'humidité dans le bac de traitement. L'invention concerne également un procédé de nettoyage de substrats, notamment de plaquettes, dans un bac de traitement destiné à recevoir au moins un substrat. Ce procédé consiste: à introduire un substrat dans le bac ; à fermer le bac de traitement ; à introduire dans le bac de traitement un gaz réactif et au moins un fluide favorisant une réaction entre le gaz réactif et une couche à éliminer du substrat et présentant une certaine humidité; puis à commander la concentration d'humidité dans le bac de traitement.
EP00974406A 1999-10-19 2000-10-17 Dispositif et procede de nettoyage de substrats Withdrawn EP1230670A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE19950365 1999-10-19
DE19950365 1999-10-19
DE10007439A DE10007439C2 (de) 1999-10-19 2000-02-18 Vorrichtung und Verfahren zum Reinigen von Substraten
DE10007439 2000-02-18
PCT/EP2000/010212 WO2001029883A1 (fr) 1999-10-19 2000-10-17 Dispositif et procede de nettoyage de substrats

Publications (1)

Publication Number Publication Date
EP1230670A1 true EP1230670A1 (fr) 2002-08-14

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP00974406A Withdrawn EP1230670A1 (fr) 1999-10-19 2000-10-17 Dispositif et procede de nettoyage de substrats

Country Status (5)

Country Link
US (1) US6817369B1 (fr)
EP (1) EP1230670A1 (fr)
JP (1) JP2004500705A (fr)
TW (1) TW480612B (fr)
WO (1) WO2001029883A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003224102A (ja) * 2002-01-30 2003-08-08 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP3953361B2 (ja) * 2002-05-08 2007-08-08 東京エレクトロン株式会社 基板処理装置および基板処理方法
DE10319521A1 (de) * 2003-04-30 2004-11-25 Scp Germany Gmbh Verfahren und Vorrichtung zum Behandeln von scheibenförmigen Substraten
US7431040B2 (en) * 2003-09-30 2008-10-07 Tokyo Electron Limited Method and apparatus for dispensing a rinse solution on a substrate
US20070261718A1 (en) * 2006-05-10 2007-11-15 Rubinder Randhawa Method and apparatus for ozone-enhanced cleaning of flat objects with pulsed liquid jet
US20140216498A1 (en) * 2013-02-06 2014-08-07 Kwangduk Douglas Lee Methods of dry stripping boron-carbon films
US10082461B2 (en) 2014-07-29 2018-09-25 Nanometrics Incorporated Optical metrology with purged reference chip
US11220758B2 (en) * 2016-06-15 2022-01-11 Seoul Viosys Co., Ltd. Systems and methods for thermal hydro-synthesis of semiconductor materials by holding a substrate wafer within a chamber in a vertical direction

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JPH05259139A (ja) 1992-03-16 1993-10-08 Hitachi Ltd 洗浄装置
KR940012061A (ko) 1992-11-27 1994-06-22 가나이 쯔또무 유기물제거방법 및 그 방법을 이용하기 위한 유기물제거장치
KR100370728B1 (ko) * 1994-10-27 2003-04-07 실리콘 밸리 그룹, 인크. 기판을균일하게코팅하는방법및장치
US5783495A (en) 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
DE19704454C2 (de) 1997-02-06 2000-03-02 Bosch Gmbh Robert Verfahren zur Herstellung oberflächenmikromechanischer Strukturen mittels Ätzung in der Dampfphase
EP0867924B1 (fr) 1997-02-14 2011-08-31 Imec Procédé pour enlever la contamination organique de la surface de semiconducteurs

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0129883A1 *

Also Published As

Publication number Publication date
JP2004500705A (ja) 2004-01-08
WO2001029883A1 (fr) 2001-04-26
US6817369B1 (en) 2004-11-16
TW480612B (en) 2002-03-21

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