EP1219028B1 - Miroir acoustique et son procede de fabrication - Google Patents

Miroir acoustique et son procede de fabrication Download PDF

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Publication number
EP1219028B1
EP1219028B1 EP00964249A EP00964249A EP1219028B1 EP 1219028 B1 EP1219028 B1 EP 1219028B1 EP 00964249 A EP00964249 A EP 00964249A EP 00964249 A EP00964249 A EP 00964249A EP 1219028 B1 EP1219028 B1 EP 1219028B1
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Prior art keywords
layers
layer
recess
produced
metal
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EP00964249A
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German (de)
English (en)
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EP1219028A1 (fr
Inventor
Robert Aigner
Lüder ELBRECHT
Stephan Marksteiner
Annette SÄNGER
Hans-Jörg TIMME
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Infineon Technologies AG
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Infineon Technologies AG
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Definitions

  • the invention relates to an acoustic mirror, the acoustic Reflected waves of a defined frequency range.
  • Such an acoustic mirror is used, for example, in B. Olutade et al, "Sensitivity Analysis of Thin Film Bulk Acoustic Resonator Ladder Filter ", IEEE International Frequency Control Symposium 1997, 737.
  • the acoustic Mirror consists of a stack of thin layers with alternating high and low acoustic impedance.
  • the fat of the thin films is for example a quarter of the wavelength the to be reflected acoustic waves in the respective Thin film.
  • the preparation of the acoustic mirror as compatible as possible with silicon processing techniques, so that the acoustic mirror along with other components can be integrated on a chip.
  • NMP Nitride Masked Polishing
  • the invention is based on the problem, an acoustic Specify mirrors whose manufacture is compatible with silicon processing techniques is and in comparison to the prior art may have a particularly high reflectivity. Further is a method for producing such an acoustic Mirror can be specified.
  • the reflectivity is the higher the greater the difference between the acoustic impedances of the layers of the acoustic Mirror is.
  • Metal layers have a particularly high Impedance up. Due to the use of metal layers the reflectivity of the acoustic mirror can be especially be high.
  • Acoustic waves are reflected by a pile that consists of the insulating layers and the metal layers.
  • the reflection condition satisfied by the thicknesses of the layers is, for example, that one under one certain angles to the substrate incident acoustic Wave with a certain frequency from the layers especially is reflected well.
  • the thicknesses of the insulating layers and the metal layers are each preferably substantially ⁇ / 4, where ⁇ the wavelength of an acoustic wave in the respective Layer is that at vertical incidence on the substrate especially is reflected well.
  • the wavelength depends on the same Frequency of the wave from the impedance and from the specifi Density of the material that passes through the shaft.
  • the insulating layers have a low acoustic Impedance while the metal layers have a high acoustic Have impedance.
  • the thicknesses of the metal layers are So preferably the same. The same applies to the insulating ones Layers.
  • the insulating layers and the metal layers However, they usually have different thicknesses.
  • the bottom layer of the stack is for example one of insulating layers.
  • the uppermost layer of the stack is preferably one of the metal layers.
  • the layers of the stack are applied substantially conformally.
  • Adjacent layers of the stack preferably adjoin one another to each other. It can be between each other adjacent layers, however, also compared to the Layers of very thin intermediate layers, e.g. Diffusion barriers, be arranged.
  • the metal layers generated in at least one recess have smaller horizontal surfaces on as the substrate.
  • the capacity of the acoustic Mirror, which is formed by the metal layers, is in Comparison to an acoustic mirror, in which the metal layers cover the whole substrate, smaller.
  • a metal layer that covers the entire substrate causes due to a high layer stress, a bending of the substrate, the stronger the thicker the metal layer is.
  • the bending becomes of the substrate avoided because the metal layers are not covered the entire substrate, but only in one or more Well is arranged.
  • the metal layers are first deposited over the entire surface and then by chemical-mechanical polishing structured so that they are within their respective Well are arranged.
  • chemical-mechanical Polishing the metal can be better structured than by Etching using a photolithographic process. reason this is the bending of the substrate after the whole area Deposition of the metal layer causing problems in photolithographic Processes leads. For example, at a Strong bending Adjustment marks for adjusting masks not to be found. When bending the substrate is over it A sharp picture on exposure to produce the masks made of photoresist no longer possible.
  • inventive Method can deepening with the help of a photolithographic process before deposition of the metal layer, that is to say when the substrate is unbent.
  • the shape of the recess defines the shape of the metal layer.
  • the method allows the simultaneous generation of contacts or lines, which also generates on the substrate be structured by the auxiliary layer is structured accordingly and the recesses or contact holes generated thereby the deposition and the chemical mechanical polishing of the metal layer be filled. Again, the required Lithography on unbent substrate.
  • auxiliary layer containing the metal layer surrounds, exists between an area where the metal layer is arranged, and an area next to the metal layer is arranged, no or a smaller height difference as if the metal layer is structured by etching would have been. In a method according to the invention thus occur no topology problems.
  • etching metal with Help a photolithographic process for generating the metal layer without using the auxiliary layer and the Deepening, however, is formed a step through which it to Problems with deposition of further layers or photolithographic Procedures in which both an area of structured metal layer as well as a next to it Area to be exposed comes.
  • One of the metal layers can be arranged in a depression be arranged in the otherwise no further metal layer is.
  • the Metal layer deposited and planarized chemical-mechanical.
  • Target over the metal layer another metal layer are generated on the auxiliary layer one of the insulating Layers produced and about another auxiliary layer with a depression that over the depression of the Auxiliary layer is arranged and the further auxiliary layer severed.
  • the further metal layer is in the depression generates the further auxiliary layer.
  • the metal layer structured by chemical-mechanical polishing is the depth of the depression is equal to or greater than that Thickness of the structured metal layer.
  • an upper surface of the metal layer may also be deeper lie as an upper surface of the auxiliary layer.
  • the recess substantially on. Since the insulating layer on the auxiliary layer and the metal layer is arranged, is also in this case the insulating layer not disposed within the recess. Only part of the insulating layer is inside the Well arranged.
  • each metal layer in each case in a depression can e.g. all metal layers in each case in a depression be generated.
  • the depressions are arranged one above the other.
  • Between each two of the auxiliary layers is one of arranged insulating layers.
  • the metal layers and an interposed therebetween the insulating layers in the same recess be generated. These are after generation of the recess over the entire surface, first the one metal layer, then the insulating one Layer and then the further metal layer deposited. Subsequently, the metal layers and the insulating Layer by chemical-mechanical polishing in one Step removed until arranged outside the recess Parts of the two metal layers and the insulating layer be removed.
  • the bottom layer of the layers that created in the depression can be another of the insulating layers or one of the two metal layers.
  • the auxiliary layer must be even thicker be formed and other insulating layers and metal layers be deposited.
  • the depth of the pit is equal to or greater than the sum the thicknesses of all arranged within the recess Layers.
  • a horizontal area of the metal layers is between (20 * 20) by 2 and (400 * 400) ⁇ m 2 .
  • dishing there may be an effect of chemical mechanical polishing called dishing.
  • the thickness of the stop layer is preferably between 30 nm and 100 nm or at least 5 times smaller than the thickness of the metal layer.
  • the stop layer is made of a material that is hardly attacked in the chemical mechanical polishing of the metal. Parts of the stop layer located outside the recess are removed.
  • the metal layer is selectively chemically-mechanically polished to the stop layer.
  • the stop layer prevents that due to dishing and parts of the metal layer are removed within the recess.
  • the depth of the depression should not be smaller than the sum of all layers arranged therein, including the stop layer.
  • the stop layer covers the topmost metal layer.
  • the stop layer consists for example of titanium, TiN or Silicon nitride.
  • the stop layer for example, by chemical-mechanical Polishing can be structured. Alternatively it will the stop layer by a photolithographic process structured. As a method is, for example, dry etching suitable.
  • Stop layers are removed.
  • the metal layers are made of tungsten, for example.
  • the metal layers can be made of molybdenum or platinum consist.
  • the insulating layers consist for example of SiO 2 or of silicon nitride.
  • the auxiliary layers consist for example of SiO 2 or of silicon nitride.
  • the auxiliary layers selectively to the insulating layers be etchable.
  • the auxiliary layers etched selectively to the insulating layers.
  • the auxiliary layer selectively becomes the etch stop layer etched until a portion of the etch stop layer is exposed becomes.
  • the part of the etch stop layer can then be removed or acts as part of the insulating layer.
  • two or three metal layers are provided.
  • a first substrate 1 made of silicon is provided (see FIG 1).
  • first substrate 1 On the first substrate 1, an approximately 0.8 ⁇ m thick first insulating layer I1 of SiO 2 is produced (see FIG. 1).
  • first insulating layer II On the first insulating layer II, an approximately 100 nm thick first etching stop layer A1 of silicon nitride is produced. In addition, an approximately 0.9 ⁇ m thick first auxiliary layer H1 made of SiO 2 is produced (see FIG. 1).
  • a first recess V1 is generated by first SiO 2 is etched selectively with respect to silicon nitride to a portion of the etching stop layer is exposed (not shown) by means of a first photoresist mask in the first auxiliary layer H1, and then the portion of the etch stop layer A1 selectively removed to SiO 2 becomes.
  • the first depression V1 cuts through the first auxiliary layer H1 and the etching stop layer A1.
  • the first depression V1 has a square horizontal cross section with a side length of about 200 ⁇ m (see FIG. 1).
  • the first depression V1 extends to the first insulating layer I1.
  • first metal layer M1 tungsten is introduced into a thickness of about 0.7 microns deposited (see Figure 1). About that becomes a 50 nm thick first stop layer S1 made of titanium generated.
  • the first metal layer M1 becomes selective to the first Auxiliary layer H1 and the stop layer S1 by chemical mechanical polishing removed until outside the first Well V1 arranged parts of the first metal layer M1 be removed (see Figure 3).
  • the structured first metal layer M1 and the structured first stop layer S1 are arranged inside the first recess V1.
  • an approximately 100 nm thick second etch stop layer A2 of silicon nitride is produced.
  • a 0.9 ⁇ m thick second auxiliary layer H2 of SiO 2 is produced, in which, as in the first auxiliary layer H1, a second depression V2 is produced.
  • the second depression V2 is configured like the first depression V1 and is arranged directly above the first depression V1.
  • a ca. 0.7 ⁇ m thick second metal layer M2 made of tungsten and about a 50nm thick second Stop layer S2 made of titanium (see Figure 4).
  • the second Stop layer S2 and the second metal layer M2 are like the first stop layer S1 and the first metal layer M1 structured chemical-mechanical polishing (see Figure 4).
  • the method described becomes an acoustic mirror generated by the due to the first insulating layer I1, the first metal layer M1, the second insulating Layer I2 and the second metal layer M2 acoustic waves with a frequency of about 1.8GHz at normal incidence the substrate 1 can be reflected particularly well.
  • a second substrate 2 made of silicon is provided (see FIG 5).
  • first insulating layer I1 ' On the first insulating layer I1 ', an approximately 100 nm thick first etching stop layer A1' made of silicon nitride is produced. Over this, an approximately 2.7 ⁇ m thick first auxiliary layer H 'of SiO 2 is produced (see FIG. 5).
  • the first auxiliary layer H ' is patterned.
  • SiO 2 is first selectively etched to the silicon nitride is exposed to a part of the first etch stop layer A1 '.
  • the part of the etching stop layer A1 ' is removed.
  • a first depression V ' is produced in the first auxiliary layer H', which extends to the first insulating layer I1 'and has a horizontal cross-section which is square and has a side length of approximately 200 ⁇ m.
  • first metal layer M1 'of tungsten is produced.
  • second insulating layer I2 'of SiO 2 is produced.
  • An approximately 0.7 ⁇ m thick second metal layer M2 'of tungsten is produced over it (see FIG. 5).
  • first stop layer S ' made of titanium.
  • the first stop layer S ' is structured so that outside the first recess V 'arranged parts of the first Stop layer S 'are removed (see Figure 5).
  • the second metal layer M2 ', the second insulating layer I2 'and the first metal layer M1' chemical-mechanical polishing selective to the first Stop layer S 'and the first auxiliary layer H' removed until outside the first recess V 'arranged parts of second metal layer M2 ', the second insulating layer I2 'and the first metal layer M1' are removed (see FIG. 6).
  • third insulating layer I3 'of SiO 2 is produced.
  • second etching stop layer A2' made of silicon nitride is produced on the third insulating layer I3 '.
  • second auxiliary layer H " is produced from SiO 2 .
  • the second auxiliary layer H " is patterned. In this case, in the second auxiliary layer H '', a second recess V '' generated, which extends to the third insulating layer I3 '.
  • a ca. 0.7 ⁇ m thick third metal layer M3 ' produced from tungsten.
  • On the third metal layer M3 ' is a 50 nm thick second stop layer S "made of titanium generated (see Figure 7).
  • the second stop layer S " is so structured that outside the second recess V "arranged Parts of the second stop layer S "are removed.
  • the third metal layer M3 'by chemical-mechanical Polishing selectively to the second stop layer S '' and the second auxiliary layer H '' removed, to outside the second recess V '' arranged parts of the second Metal layer M3 'are removed (see Figure 7).
  • This method produces an acoustic mirror in the acoustic waves through the first insulating layer I1 ', the first metal layer M1', the second insulating Layer I2 ', the second metal layer M2', the third insulating Layer I3 'and the third metal layer M3' reflected become.
  • the first metal layer M1 ' covers flanks and a bottom the first recess V 'without the first recess V' fill.
  • the exemplary embodiments are conceivable, which are also within the scope of the invention.
  • dimensions of the layers and wells described adapted to the respective requirements.
  • Wavelengths are the thicknesses of the first insulating Layer, the second insulating layer, the first metal layer and the second metal layer is selected larger or smaller.
  • the stop layers can after chemically mechanical polishing are removed.
  • the metal layers, the auxiliary layers, the stop layers, the etch stop layers and the insulating layers can be different Materials are chosen.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Mirrors, Picture Frames, Photograph Stands, And Related Fastening Devices (AREA)

Claims (13)

  1. Miroir acoustique,
    dans lequel au moins deux couches (I1, I2) isolantes et au moins deux couches (M1, M2) métalliques sont superposées en alternance sur un substrat (1),
    dans lequel les couches (I1, I2) isolantes ont sensiblement la même épaisseur,
    dans lequel les couches (M1, M2) métalliques ont sensiblement la même épaisseur,
    dans lequel les épaisseurs des couches (I1, I2) isolantes et des couches (M1, M2) métalliques sont telles qu'une condition de réflexion est satisfaite,
    caractérisé en ce qu'au moins les couches (M1, M2) métalliques sont disposées à l'intérieur d'au moins une cavité (V1, V2) d'une couche (H1, H2) auxiliaire.
  2. Miroir acoustique suivant la revendication 1,
    comprenant au moins deux couches (H1, H2) auxiliaires dans lesquelles est disposée respectivement une cavité (V1, V2),
    dans lequel les au moins deux couches isolantes comprennent au moins une première couche (I1) isolante et une deuxième couche (I2) isolante,
    dans lequel les cavités (V1, V2) des couches (H1, H2) isolantes sont disposées l'une au-dessus de l'autre,
    dans lequel la deuxième des au moins deux couches (I2) isolantes est disposée entre respectivement deux des couches (H1, H2) auxiliaires,
    dans lequel au moins l'une des couches (M1, M2) métalliques est disposée à l'intérieur de la cavité (V1) de celles des couches (H1) auxiliaires à l'intérieur de laquelle il n'y a pas d'autre couche (M2) métallique,
    dans lequel la cavité (V1) qui vient d'être mentionnée traverse sa couche (H1) auxiliaire,
    dans lequel la couche (H1) auxiliaire qui vient d'être mentionnée est disposée sur la première des au moins deux couches (I1) isolantes,
    dans lequel au moins une autre des couches (M2) métalliques est disposée dans la cavité (V2) d'une autre couche auxiliaire que la couche (H2) auxiliaire qui vient d'être mentionnée.
  3. Miroir acoustique suivant la revendication 1 ou 2,
    dans lequel au moins deux des couches (M1', M2') métalliques et l'une, disposée entre elles, des couches (I2') isolantes sont disposées à l'intérieur de la même cavité (V'),
    dans lequel la plus basse des deux couches (M1') métalliques'qui viennent d'être mentionnées recouvrent un fond et des flancs de cette cavité (V') sensiblement complètement de sorte qu'une partie intermédiaire de la couche (M1') métallique la plus basse est abaissée.
  4. Miroir acoustique suivant l'une des revendications 1 à 3,
    dans lequel sur celles des couches M1) métalliques, sur laquelle n'est pas disposée une autre couche métallique à l'intérieur de la cavité dans laquelle la couche (M1) métallique qui vient d'être mentionnée est disposée, une couche (S1) d'arrêt est disposée à l'intérieur de la cavité (V1),
    dans lequel la profondeur de la cavité (V1) qui vient d'être mentionnée n'est pas plus petite que la somme des épaisseurs de toutes les couches (M1, S1) qui sont disposées dans la cavité (V1).
  5. Miroir acoustique suivant l'une des revendications 1 à 4,
    dans lequel entre au moins l'une des couches (I1) isolantes et l'une des couches (H1) auxiliaires disposées dessus est disposée une couche (A1) d'arrêt d'attaque.
  6. Miroir acoustique suivant l'une des revendications 1 à 5,
    dans lequel les couches (M1, M2) métalliques sont en tungstène,
    dans lequel les couches (I1, I2) isolantes sont en SiO2 ou en nitrure de silicium.
  7. Procédé de production d'un miroir acoustique,
    dans lequel on produit les unes au dessus des autres en alternance au moins deux couches (I1, I2) isolantes et au moins deux couches (M1, M2) métalliques sur un substrat,
    dans lequel on produit les couches (I1, I2) isolantes en leur donnant sensiblement la même épaisseur,
    dans lequel on produit les couches (M1, M2) métalliques en leur donnant sensiblement la même épaisseur,
    dans lequel les épaisseurs des couches (I1, I2) isolantes et des couches (M1, M2) métalliques sont telles qu'une condition de réflexion est satisfaite,
    caractérisé en ce que l'on produit les couches (M1, M2) métalliques en les déposant respectivement après production d'au moins une couche (H1, H2) auxiliaire dans laquelle est produite une cavité (V1, V2) et en retirant de la matière par polissage chémio-mécanique jusqu'à ce que des parties, disposées à l'extérieur de la cavité (V1, V2), de la couche (M1, M2) métallique respective soit éliminée.
  8. Procédé de production d'un miroir acoustique suivant la revendication 7,
    dans lequel on produit au moins deux couches (H1, H2) auxiliaires dans lesquelles on produit respectivement une cavité (V1, V2) de façon à ce que les cavités (V1, V2) des couches (H1, H2) auxiliaires soient disposées l'une au-dessus de l'autre,
    dans lequel les au moins deux couches isolantes produites entourent au moins une première couche (I1) isolante et une deuxième couche (I2) isolante,
    dans lequel on produit entre respectivement deux des couches (H1, H2) auxiliaires les deuxièmes des couches (I2) isolantes,
    dans lequel on produit au moins l'une des couches (M1) métalliques à l'intérieur d'une cavité (V1) de celles des couches (H1) auxiliaires à l'intérieur de laquelle il n'y a pas sinon d'autre couche métallique,
    dans lequel la cavité (V1) qui vient d'être mentionnée traverse sa couche (H1 ) auxiliaire,
    dans lequel on produit la couche (H1) auxiliaire qui vient d'être mentionnée sur la première des couches (I1) isolante,
    dans lequel on produit au moins une autre des couches (M2) métalliques à l'intérieur de la cavité (V2) d'une autre des couches (H2) auxiliaires.
  9. Procédé suivant la revendication 8,
    dans lequel on produit la deuxième des couches (I2) isolantes sur celles des couches (H1) auxiliaires à l'intérieur desquelles il n'est pas produit sinon d'autres couches métalliques,
    dans lequel on produit l'autre couche (H2) auxiliaire sur la deuxième des couches (I2) isolantes,
    dans lequel la cavité (V2) qui est produite dans l'autre couche (H2) auxiliaire va jusqu'à la deuxième couche (I2) isolante,
    dans lequel on dépose l'autre couche (M2) métallique et on enlève de la matière par polissage chémio-mécanique jusqu'à ce que des parties, disposées à l'extérieur de la cavité (V2) de l'autre couche (H2) auxiliaire, de l'autre couche (M2) métallique soit éliminée.
  10. Procédé suivant l'une des revendications 7 à 9,
    dans lequel après production de la cavité (V') dans l'une des couches auxiliaires on y dépose au moins deux couches (M1', M2') métalliques et une couche (I2') isolante interposées entre elles,
    dans lequel on enlève de la matière des deux couches (M1', M2') métalliques qui viennent d'être mentionnées et de la couche (I2') isolante par polissage chémio-mécanique jusqu'à ce que des parties, disposées à l'extérieur de la cavité (V') qui vient d'être mentionnée, des couches (M1', M2') métalliques qui viennent d'être mentionnées et de la couche (I2') isolante soient éliminées.
  11. Procédé suivant l'une des revendications 7 à 10,
    dans lequel après le dépôt de l'une des couches (M1) métalliques et avant d'en avoir enlevé de la matière, couche métallique sur laquelle pas d'autre couche métallique n'est produite à l'intérieur de la cavité (V1) dans laquelle, la couche (M1) métallique est produite, on dépose une couche (S1) d'arrêt à l'intérieur de la cavité (V1),
    dans lequel la profondeur de la cavité (V1) qui vient d'être mentionnée n'est pas plus petite que la somme des épaisseurs de toutes les couches (M1, S1) qui sont disposées dans la cavité (V1),
    dans lequel on élimine des parties de la couche (S1) d'arrêt qui se trouvent à l'extérieur de la cavité (V1 ),
    dans lequel on enlève de la matière de la couche (M1) métallique sélectivement par rapport à la couche (S1) d'arrêt par polissage chémio-mécanique.
  12. Procédé suivant l'une des revendications 7 à 11,
    dans lequel on produit entre au moins l'une des couches (I1) isolantes et l'une des couches (H1) auxiliaires qui se trouve dessus une couche (A1) d'arrêt d'attaque.
  13. Procédé suivant l'une des revendications 7 à 12,
    dans lequel les couches (M1, M2) métalliques sont en tungstène,
    dans lequel les couches (I1, I2) isolantes sont en SiO2 ou en nitrure de silicium.
EP00964249A 1999-09-30 2000-09-28 Miroir acoustique et son procede de fabrication Expired - Lifetime EP1219028B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19947081 1999-09-30
DE19947081A DE19947081A1 (de) 1999-09-30 1999-09-30 Akustischer Spiegel und Verfahren zu dessen Herstellung
PCT/EP2000/009521 WO2001024361A1 (fr) 1999-09-30 2000-09-28 Miroir acoustique et son procede de fabrication

Publications (2)

Publication Number Publication Date
EP1219028A1 EP1219028A1 (fr) 2002-07-03
EP1219028B1 true EP1219028B1 (fr) 2005-06-01

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EP00964249A Expired - Lifetime EP1219028B1 (fr) 1999-09-30 2000-09-28 Miroir acoustique et son procede de fabrication

Country Status (6)

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US (1) US6542054B2 (fr)
EP (1) EP1219028B1 (fr)
JP (1) JP3630305B2 (fr)
AT (1) ATE297068T1 (fr)
DE (2) DE19947081A1 (fr)
WO (1) WO2001024361A1 (fr)

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DE10147075A1 (de) * 2001-09-25 2003-04-30 Infineon Technologies Ag Piezoelektrisches Bauelement und Verfahren zu dessen Herstellung
DE10150253A1 (de) * 2001-10-11 2003-04-30 Infineon Technologies Ag Piezoelektrisches Bauelement
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EP1219028A1 (fr) 2002-07-03
US20020154425A1 (en) 2002-10-24
WO2001024361A1 (fr) 2001-04-05
JP2003531392A (ja) 2003-10-21
ATE297068T1 (de) 2005-06-15
DE50010475D1 (de) 2005-07-07
DE19947081A1 (de) 2001-04-05
US6542054B2 (en) 2003-04-01
JP3630305B2 (ja) 2005-03-16

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