EP1202447A1 - Verfahren zur Reduktion von Rauschen in einem HF Leistungsverstärker - Google Patents

Verfahren zur Reduktion von Rauschen in einem HF Leistungsverstärker Download PDF

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Publication number
EP1202447A1
EP1202447A1 EP01112501A EP01112501A EP1202447A1 EP 1202447 A1 EP1202447 A1 EP 1202447A1 EP 01112501 A EP01112501 A EP 01112501A EP 01112501 A EP01112501 A EP 01112501A EP 1202447 A1 EP1202447 A1 EP 1202447A1
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EP
European Patent Office
Prior art keywords
bulk acoustic
film bulk
acoustic resonator
power amplifier
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
EP01112501A
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English (en)
French (fr)
Inventor
Michael L. Frank
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Agilent Technologies Inc
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Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of EP1202447A1 publication Critical patent/EP1202447A1/de
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier

Definitions

  • the invention is related to the field of power amplifiers, particularly towards noise reduction in the power amplifiers.
  • both the transmitter and the receiver can operate simultaneously. This results in two forms of interference.
  • the first interference is the T x (transmit) band power getting into the receiver.
  • the second interference is noise generated in the R x (Receive) band by the T x portion of the radio, and leaking into the R x portion of the transceiver.
  • Both types of interference are mitigated by using a duplexer.
  • a duplexer is a three port, passive element consisting of a pair of bandpass filters and supporting components. One filter passes the T x frequencies and rejects the R x . the other passes the R x and rejects the T x .
  • the transmit (T x ) power As the transmit (T x ) power is not completely blocked by the duplexer, the power can enter the receiver thus causing distortion. In a filter-based duplexer, this is a measure of how well the receive (R x ) filter rejects the transmit T x band power.
  • the T x filter has no effect because the leakage is in the pass-band of the T x filter.
  • the second interference is caused by noise in the R x band, generated by the T x circuitry, getting by the duplexer into the receiver. This causes a loss of sensitivity. In a filter-based duplexer, this is a measure of how well the T x filter can reject the R x band power. The R x filter has no effect upon this leakage because it is in the pass-band of the R x filter. This type of crosstalk drives the design of the T x chain. The sensitivity required of the receiver dictates how much leakage is acceptable. The rejection of the duplexer dictates how much noise power the T x chain can be allowed to generate.
  • the noise figure of an amplifier is a sum all of its noise sources, referenced to the input of the amplifier.
  • the noise power at the output of that amplifier is the sum of the gain of the amplifier and the noise figure. Since the sensitivity required by the R x branch of the transceiver is set, the allowable noise power out of the T x branch effectively sets the maximum gain of the power amplifier.
  • the gain setting routine discussed above relies upon the R x noise at the input to the power amplifier be at or near the noise floor available at that temperature.
  • the noise generated in the T x chain previous to the power amplifier must be sufficiently rejected to not increase the noise power at the output of the power amplifier. This is accomplished by inserting a R x band reject filter just in front of the power amplifier, in the T x band signal path.
  • the difficulty of building this type of R x rejection filter is such that many handsets rely upon two filters in parallel, each filter dealing with half the signal bandwidth, adding half the pass-band to the reject band frequency. This makes each filter of the pair much easier than a full band implementation.
  • the input signal is routed through a switch, then into one of the filter pair. After the filter, the signal is then recombined with a switch.
  • One prior art implementation shown in Figure 1, includes a R x rejection filter in front of a two-stage power amplifier. Given that this node is at or near the noise floor, and given the amount of noise generated in the power amplifier, the amount of R x rejection required in the duplexer can be specified.
  • the duplexer filter that implements the required rejection has an associated insertion loss. This loss is in the T x band, and is dependent upon the R x band rejection. Hence, the more rejection required, the higher the loss in the T x band.
  • Receive band filtering between the last two stages of an N-stage power amplifier can reduce the R x band noise.
  • N-1 interstage matching networks interposing N stage amplifiers, where N greater than or equal to 2.
  • the interstage matching networks and stage amplifiers are electrically connected in series.
  • the N-1 th or ultimate interstage matching network includes a T x band filter positioned proximate to the output of the penultimate or N-1 th stage power amplifier.
  • the R x band noise dependency upon the T x chain is reduced so that the duplexer rejection requirement may be relaxed. As the loss is less, less power is required from the power amplifier. This is turn requires less current and results in longer battery life.
  • FIG. 2 illustrates a transceiver 10 using an N-stage power amplifier of the present invention, where N ⁇ 2.
  • An antenna 12 is connected to a duplexer 14.
  • the duplexer 14 receives data from antenna 12 and transmits it to low noise amplifier (LNA) 16.
  • a receive R x filter 18 is connected between LNA 16 and a downconverter 20.
  • An IF filter 22 receives the output of downconverter 20.
  • the duplexer 12 transmits data received from a power amplifier/filter 24.
  • a transmit T x filter 26 connects between power amplifier/filter 24 and an upconverter 28.
  • FIG. 3 illustrates a two-stage amplifier of the prior art.
  • the interstage matching network is an RLC network.
  • Figure 4 illustrates a novel power amplifier/filter 24, as shown in Figure 2. While a two-stage power amplifier is illustrated, this concept as will be described is easily extended to cover a N-stage power amplifier. In this illustration, N equals 2.
  • the N-1 th interstage matching network includes a receive band filter positioned proximate to the output of the N-1 th stage power amplifier.
  • the N-1 th interstage matching network has very low impedance.
  • the receive band filter is designed to operate at the required impedance.
  • the illustrative filter operates in a 6 ⁇ network. Approximately, 10dB of net rejection results in about 10dB reduction in the output R x band noise power.
  • the receive band filter may be a surface acoustic wave filter, a film bulk acoustic resonator (FBAR) filter, a ceramic filter, or a piezo-electric based filter.
  • Figure 5 illustrates a preferred embodiment of the interstage matching network shown in Figure 4.
  • a first FBAR 12 is serially connected between the input and a first inductor 14 is tied to ground.
  • a second FBAR 16 is connected between the input and output.
  • a third FBAR 18 is connected between the output and a second inductor 20 that is tied to ground.
  • the first and third FBARS 12, 18 have one resonant frequency while the second FBAR 16 has another resonant frequency.
  • Figure 6 shows the noise reduction for a two stage power amplifier using the receive band filter shown in Figure 4 in the N-1 th interstage matching network.
  • Figure 7 illustrates another preferred embodiment of the interstage matching network shown in Figure 4.
  • a first FBAR 30 is connected between the input and second FBAR 32 that is connected to the output.
  • a third and a fourth FBAR 34, 36 are connected to node A.
  • An inductor 38 is connected between the third FBAR 34 and ground.
  • Another inductor 40 is connected between the fourth FBAR 36 and ground.
  • the first and second FBARS 30, 32 have one resonant frequency while the third and fourth FBARS 34, 36 have a different resonant frequency.
  • Figure 8 illustrates another preferred embodiment of the interstage matching network shown in Figure 4.
  • a first FBAR 42 is connected between the input and second FBAR 44 that is connected to the output.
  • a third FBAR 46 is serially connected to an inductor 48.
  • the first and second FBARs 24, 44 have one resonant frequency while the third FBAR 46 has a different resonant frequency.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
EP01112501A 2000-10-03 2001-05-22 Verfahren zur Reduktion von Rauschen in einem HF Leistungsverstärker Withdrawn EP1202447A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/678,954 US6489862B1 (en) 2000-10-03 2000-10-03 Method for reducing noise generated in a power amplifier
US678954 2000-10-03

Publications (1)

Publication Number Publication Date
EP1202447A1 true EP1202447A1 (de) 2002-05-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP01112501A Withdrawn EP1202447A1 (de) 2000-10-03 2001-05-22 Verfahren zur Reduktion von Rauschen in einem HF Leistungsverstärker

Country Status (6)

Country Link
US (1) US6489862B1 (de)
EP (1) EP1202447A1 (de)
JP (1) JP2002185262A (de)
KR (1) KR20020026836A (de)
MY (1) MY127331A (de)
SG (1) SG108279A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020026836A (ko) * 2000-10-03 2002-04-12 마리 오 휴버 파워 증폭기
EP1505726A1 (de) * 2003-08-01 2005-02-09 Northrop Grumman Space & Missions Systems Corp. Asymmetrisch optimizierter Zweirichtungsverstärker mit gemeinsamer Source

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WO2003015260A1 (en) * 2001-08-06 2003-02-20 California Institute Of Technology Method and apparatus for a multi-pole bandwidth enhancement technique for wideband amplification
US7113980B2 (en) 2001-09-06 2006-09-26 Bea Systems, Inc. Exactly once JMS communication
US6710677B2 (en) * 2002-02-12 2004-03-23 Nortel Networks Limited Band reject filters
US6924715B2 (en) * 2002-02-12 2005-08-02 Nortel Networks Limited Band reject filters
US20050093652A1 (en) * 2003-10-31 2005-05-05 Qing Ma Size scaling of film bulk acoustic resonator (FBAR) filters using impedance transformer (IT) or balun
US7777597B2 (en) * 2004-10-29 2010-08-17 Nortel Networks Limited Band reject filters
US7274270B2 (en) * 2005-04-13 2007-09-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Resonator matching network
US7274275B2 (en) * 2005-06-10 2007-09-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bandpass filter network and method for bandpass filtering signals using multiple acoustic resonators
US7443269B2 (en) * 2005-07-27 2008-10-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit
US7372335B2 (en) * 2005-10-21 2008-05-13 Wilinx, Inc. Wideband circuits and methods
US7586389B2 (en) * 2006-06-19 2009-09-08 Maxim Integrated Products, Inc. Impedance transformation and filter using bulk acoustic wave technology
US7598827B2 (en) * 2006-06-19 2009-10-06 Maxim Integrated Products Harmonic termination of power amplifiers using BAW filter output matching circuits
JP2008252249A (ja) * 2007-03-29 2008-10-16 Mitsubishi Electric Corp 衛星通信用地上局装置
US7868703B2 (en) * 2009-05-01 2011-01-11 Raytheon Company Passive spectrum control for pulsed RF power amplifiers
US9484887B2 (en) * 2012-11-28 2016-11-01 Telefonaktiebolaget Lm Ericsson (Publ) Acoustic wave band reject filter
WO2015001828A1 (ja) * 2013-07-01 2015-01-08 株式会社村田製作所 フロントエンド回路
JP6288099B2 (ja) * 2013-09-26 2018-03-07 株式会社村田製作所 高周波パワーアンプ、高周波フロントエンド回路、無線通信装置
CN106464283B (zh) * 2014-06-02 2019-03-08 株式会社村田制作所 发送电路、高频前端电路、发送信号的控制方法以及高频前端的收发控制方法
US10396750B2 (en) 2016-08-26 2019-08-27 Samsung Electro-Mechanics Co., Ltd. Radio frequency transmitter having improved receive band rejection function
KR102323572B1 (ko) 2017-05-16 2021-11-05 삼성전기주식회사 수신밴드 가변 필터링 기능을 갖는 다중밴드 고주파 송신 장치
WO2022080393A1 (ja) * 2020-10-14 2022-04-21 株式会社村田製作所 電力増幅回路及び通信装置
WO2024057696A1 (ja) * 2022-09-16 2024-03-21 株式会社村田製作所 高周波回路および通信装置

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US5051706A (en) * 1988-11-09 1991-09-24 Kabushiki Kaisha Toshiba High frequency power amplifier circuit
US5438683A (en) * 1992-03-02 1995-08-01 Novatel Communications, Ltd. Automatic level control circuit for dual mode analog/digital cellular telephone
EP0862266A2 (de) * 1997-02-12 1998-09-02 Oki Electric Industry Co., Ltd. Akustische Oberflächenwellenfilter mit erzeugten Dämpfungspolen durch Impedanzschaltungen
WO2000024124A1 (en) * 1998-10-22 2000-04-27 Ericsson, Inc. Dual-band, dual-mode power amplifier with reduced power loss
US6122491A (en) * 1996-12-27 2000-09-19 Lucent Technologies Inc. Communications system using power amplifier with dynamic biasing

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JP2533497B2 (ja) * 1986-08-13 1996-09-11 株式会社日立製作所 電力制御方法
JPH04306922A (ja) * 1991-04-04 1992-10-29 Nec Corp マイクロ波帯送受信共用無線装置
JP2855989B2 (ja) * 1992-08-31 1999-02-10 日本電気株式会社 高周波信号増幅回路
CN1077354C (zh) * 1995-06-09 2002-01-02 松下电器产业株式会社 放大器
EP0795956B1 (de) * 1995-09-29 2003-10-29 Matsushita Electric Industrial Co., Ltd. Leistungsverstärker und kommunikationsvorrichtung
JPH09219667A (ja) * 1996-02-13 1997-08-19 Murata Mfg Co Ltd スペクトル拡散通信送信装置
US6078794A (en) * 1997-02-19 2000-06-20 Motorola, Inc. Impedance matching for a dual band power amplifier
JP2000138546A (ja) * 1998-10-30 2000-05-16 Kyocera Corp 高周波用多段電力増幅器
US6489862B1 (en) * 2000-10-03 2002-12-03 Agilent Technologies, Inc. Method for reducing noise generated in a power amplifier

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051706A (en) * 1988-11-09 1991-09-24 Kabushiki Kaisha Toshiba High frequency power amplifier circuit
US5438683A (en) * 1992-03-02 1995-08-01 Novatel Communications, Ltd. Automatic level control circuit for dual mode analog/digital cellular telephone
US6122491A (en) * 1996-12-27 2000-09-19 Lucent Technologies Inc. Communications system using power amplifier with dynamic biasing
EP0862266A2 (de) * 1997-02-12 1998-09-02 Oki Electric Industry Co., Ltd. Akustische Oberflächenwellenfilter mit erzeugten Dämpfungspolen durch Impedanzschaltungen
WO2000024124A1 (en) * 1998-10-22 2000-04-27 Ericsson, Inc. Dual-band, dual-mode power amplifier with reduced power loss

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020026836A (ko) * 2000-10-03 2002-04-12 마리 오 휴버 파워 증폭기
EP1505726A1 (de) * 2003-08-01 2005-02-09 Northrop Grumman Space & Missions Systems Corp. Asymmetrisch optimizierter Zweirichtungsverstärker mit gemeinsamer Source
US7239852B2 (en) 2003-08-01 2007-07-03 Northrop Grumman Corporation Asymmetric, optimized common-source bi-directional amplifier

Also Published As

Publication number Publication date
SG108279A1 (en) 2006-01-27
MY127331A (en) 2006-11-30
KR20020026836A (ko) 2002-04-12
US6489862B1 (en) 2002-12-03
JP2002185262A (ja) 2002-06-28

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