EP1160882A3 - A photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate - Google Patents
A photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate Download PDFInfo
- Publication number
- EP1160882A3 EP1160882A3 EP01112409A EP01112409A EP1160882A3 EP 1160882 A3 EP1160882 A3 EP 1160882A3 EP 01112409 A EP01112409 A EP 01112409A EP 01112409 A EP01112409 A EP 01112409A EP 1160882 A3 EP1160882 A3 EP 1160882A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- photonic device
- fabricating
- substrate
- manufacturing
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000149191 | 2000-05-22 | ||
JP2000149191 | 2000-05-22 | ||
JP2000149190 | 2000-05-22 | ||
JP2000149190 | 2000-05-22 | ||
JP2000293846 | 2000-09-27 | ||
JP2000293763 | 2000-09-27 | ||
JP2000293763 | 2000-09-27 | ||
JP2000293846 | 2000-09-27 | ||
JP2001114067A JP4131618B2 (en) | 2000-05-22 | 2001-04-12 | Manufacturing method of substrate for photonic device |
JP2001114067 | 2001-04-12 | ||
JP2001114065A JP3626423B2 (en) | 2000-05-22 | 2001-04-12 | Photonic device manufacturing method |
JP2001114065 | 2001-04-12 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1160882A2 EP1160882A2 (en) | 2001-12-05 |
EP1160882A3 true EP1160882A3 (en) | 2006-01-04 |
EP1160882B1 EP1160882B1 (en) | 2018-12-05 |
Family
ID=27554788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01112409.6A Expired - Lifetime EP1160882B1 (en) | 2000-05-22 | 2001-05-21 | Method for manufacturing a photonic device |
Country Status (4)
Country | Link |
---|---|
US (1) | US6495894B2 (en) |
EP (1) | EP1160882B1 (en) |
KR (1) | KR20010107604A (en) |
CN (1) | CN1193439C (en) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002075880A (en) * | 2000-09-01 | 2002-03-15 | Sanyo Electric Co Ltd | Method for forming nitride-based semiconductor layer and method for manufacturing nitride-based semiconductor device |
JP3941449B2 (en) | 2000-10-18 | 2007-07-04 | 日本碍子株式会社 | Group III nitride film |
JP4001262B2 (en) * | 2001-02-27 | 2007-10-31 | 日本碍子株式会社 | Method for manufacturing nitride film |
EP1235282B1 (en) * | 2001-02-27 | 2017-05-17 | NGK Insulators, Ltd. | Method of fabricating a III-nitride film and corresponding III-nitride film |
US6703255B2 (en) | 2001-03-28 | 2004-03-09 | Ngk Insulators, Ltd. | Method for fabricating a III nitride film |
JP4209097B2 (en) | 2001-05-24 | 2009-01-14 | 日本碍子株式会社 | Semiconductor photo detector |
JP3795771B2 (en) * | 2001-06-13 | 2006-07-12 | 日本碍子株式会社 | Group III nitride semiconductor substrate for ELO |
JP3954335B2 (en) * | 2001-06-15 | 2007-08-08 | 日本碍子株式会社 | Group III nitride multilayer film |
US7148520B2 (en) | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
JP3831322B2 (en) * | 2001-12-25 | 2006-10-11 | 日本碍子株式会社 | Group III nitride film manufacturing method, epitaxial growth substrate, group III nitride film, group III nitride element epitaxial substrate, and group III nitride element |
JP4063548B2 (en) * | 2002-02-08 | 2008-03-19 | 日本碍子株式会社 | Semiconductor light emitting device |
DE10208766B4 (en) * | 2002-02-28 | 2007-06-21 | Osram Opto Semiconductors Gmbh | Process for the production of radiation-emitting semiconductor chips |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
US8134168B2 (en) | 2003-10-14 | 2012-03-13 | Showa Denko K.K. | Group-III nitride semiconductor device |
CN1333471C (en) * | 2004-03-12 | 2007-08-22 | 广镓光电股份有限公司 | Buffer layer for light emitting semiconductor device |
US7872268B2 (en) * | 2004-04-22 | 2011-01-18 | Cree, Inc. | Substrate buffer structure for group III nitride devices |
KR101254539B1 (en) * | 2004-04-28 | 2013-04-19 | 버티클 인코퍼레이티드 | Vertical structure semiconductor devices |
JP2006073578A (en) * | 2004-08-31 | 2006-03-16 | Nokodai Tlo Kk | METHOD AND EQUIPMENT FOR VAPOR PHASE EPITAXIAL GROWTH IN AlGaN |
TWI299915B (en) * | 2004-11-16 | 2008-08-11 | Showa Denko Kk | Group iii nitride semiconductor light-emitting device |
JP4189386B2 (en) * | 2005-01-27 | 2008-12-03 | ローム株式会社 | Method for growing nitride semiconductor crystal layer and method for producing nitride semiconductor light emitting device |
CN1996625A (en) * | 2006-01-06 | 2007-07-11 | 大连路明科技集团有限公司 | GaN base optical electronic part and its making method |
KR100756841B1 (en) * | 2006-03-13 | 2007-09-07 | 서울옵토디바이스주식회사 | Light emitting diode having graded buffer layer and fabrication method thereof |
US7498645B2 (en) * | 2006-10-04 | 2009-03-03 | Iii-N Technology, Inc. | Extreme ultraviolet (EUV) detectors based upon aluminum nitride (ALN) wide bandgap semiconductors |
EP2273536B1 (en) * | 2008-03-13 | 2013-10-30 | Toyoda Gosei Co., Ltd. | Group iii nitride semiconductor device and method for manufacturing the same, group iii nitride semiconductor light-emitting device and method for manufacturing the same, and lamp |
CN101640227B (en) * | 2009-09-07 | 2012-12-05 | 中国科学院微电子研究所 | Solar blind AlGaN ultraviolet detector with self-gain and preparation method thereof |
US20130082274A1 (en) * | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
US10490697B2 (en) | 2011-12-03 | 2019-11-26 | Sensor Electronic Technology, Inc. | Epitaxy technique for growing semiconductor compounds |
US10158044B2 (en) | 2011-12-03 | 2018-12-18 | Sensor Electronic Technology, Inc. | Epitaxy technique for growing semiconductor compounds |
US10211048B2 (en) * | 2012-02-01 | 2019-02-19 | Sensor Electronic Technology, Inc. | Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds |
EP2720257A4 (en) * | 2012-08-10 | 2015-09-23 | Ngk Insulators Ltd | Semiconductor element, hemt element, and method for manufacturing semiconductor element |
JP5362085B1 (en) * | 2012-09-05 | 2013-12-11 | 株式会社東芝 | Nitride semiconductor wafer, nitride semiconductor device, and method of manufacturing nitride semiconductor wafer |
WO2014118162A1 (en) * | 2013-01-31 | 2014-08-07 | Osram Opto Semiconductors Gmbh | Semiconductor layer sequence and method for producing a semiconductor layer sequence |
KR102175320B1 (en) * | 2014-04-07 | 2020-11-06 | 엘지이노텍 주식회사 | Light emitting device and lighting system having the same |
WO2016009577A1 (en) * | 2014-07-18 | 2016-01-21 | キヤノンアネルバ株式会社 | Method for forming nitride semiconductor layer and method for manufacturing semiconductor device |
TWI703726B (en) * | 2016-09-19 | 2020-09-01 | 新世紀光電股份有限公司 | Semiconductor device containing nitrogen |
CN107634128A (en) * | 2017-09-14 | 2018-01-26 | 厦门三安光电有限公司 | Nitride semiconductor device |
US11054673B2 (en) | 2018-05-11 | 2021-07-06 | Raytheon Bbn Technologies Corp. | Photonic devices |
US10890712B2 (en) | 2018-05-11 | 2021-01-12 | Raytheon Bbn Technologies Corp. | Photonic and electric devices on a common layer |
CN109904286B (en) * | 2019-01-18 | 2021-08-06 | 华灿光电(浙江)有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393993A (en) * | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
JPH07235692A (en) * | 1993-12-30 | 1995-09-05 | Sony Corp | Compound semiconductor device and forming method thereof |
EP0731512A2 (en) * | 1995-03-10 | 1996-09-11 | Hewlett-Packard Company | Light emitting diode |
US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
US5838706A (en) * | 1994-09-20 | 1998-11-17 | Cree Research, Inc. | Low-strain laser structures with group III nitride active layers |
JPH11145063A (en) * | 1997-11-05 | 1999-05-28 | Sanken Electric Co Ltd | Semiconductor device having gallium nitride semiconductor layer and its manufacture |
DE19905517A1 (en) * | 1998-06-05 | 1999-12-09 | Hewlett Packard Co | Buffer layer for semiconductor device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5182670A (en) * | 1991-08-30 | 1993-01-26 | Apa Optics, Inc. | Narrow band algan filter |
JPH05291618A (en) | 1992-04-08 | 1993-11-05 | Asahi Chem Ind Co Ltd | Light emitting device |
US5883564A (en) * | 1994-04-18 | 1999-03-16 | General Motors Corporation | Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer |
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
JPH08203862A (en) * | 1995-01-27 | 1996-08-09 | Matsushita Electric Ind Co Ltd | Method for etching nitride compound semiconductor |
JPH0964477A (en) | 1995-08-25 | 1997-03-07 | Toshiba Corp | Semiconductor light emitting element and its manufacture |
JP3712770B2 (en) * | 1996-01-19 | 2005-11-02 | 豊田合成株式会社 | Method for manufacturing group 3 nitride semiconductor and semiconductor device |
US5834331A (en) * | 1996-10-17 | 1998-11-10 | Northwestern University | Method for making III-Nitride laser and detection device |
JPH10303510A (en) * | 1997-04-23 | 1998-11-13 | Fuji Electric Co Ltd | Iii-group nitride semiconductor device and its manufacture |
JP3545197B2 (en) * | 1998-03-23 | 2004-07-21 | 三洋電機株式会社 | Semiconductor device and method of manufacturing the same |
JP3505405B2 (en) * | 1998-10-22 | 2004-03-08 | 三洋電機株式会社 | Semiconductor device and method of manufacturing the same |
US6133589A (en) * | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
-
2001
- 2001-05-14 US US09/854,925 patent/US6495894B2/en not_active Expired - Lifetime
- 2001-05-21 EP EP01112409.6A patent/EP1160882B1/en not_active Expired - Lifetime
- 2001-05-21 KR KR1020010027650A patent/KR20010107604A/en active Search and Examination
- 2001-05-22 CN CNB011372893A patent/CN1193439C/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393993A (en) * | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
JPH07235692A (en) * | 1993-12-30 | 1995-09-05 | Sony Corp | Compound semiconductor device and forming method thereof |
US5838706A (en) * | 1994-09-20 | 1998-11-17 | Cree Research, Inc. | Low-strain laser structures with group III nitride active layers |
EP0731512A2 (en) * | 1995-03-10 | 1996-09-11 | Hewlett-Packard Company | Light emitting diode |
US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
JPH11145063A (en) * | 1997-11-05 | 1999-05-28 | Sanken Electric Co Ltd | Semiconductor device having gallium nitride semiconductor layer and its manufacture |
DE19905517A1 (en) * | 1998-06-05 | 1999-12-09 | Hewlett Packard Co | Buffer layer for semiconductor device |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 01 31 January 1996 (1996-01-31) * |
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 10 31 August 1999 (1999-08-31) * |
Also Published As
Publication number | Publication date |
---|---|
KR20010107604A (en) | 2001-12-07 |
CN1193439C (en) | 2005-03-16 |
US6495894B2 (en) | 2002-12-17 |
EP1160882A2 (en) | 2001-12-05 |
US20020020850A1 (en) | 2002-02-21 |
EP1160882B1 (en) | 2018-12-05 |
CN1344037A (en) | 2002-04-10 |
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