EP1155456A1 - Structure de diode esd amelioree - Google Patents

Structure de diode esd amelioree

Info

Publication number
EP1155456A1
EP1155456A1 EP00981343A EP00981343A EP1155456A1 EP 1155456 A1 EP1155456 A1 EP 1155456A1 EP 00981343 A EP00981343 A EP 00981343A EP 00981343 A EP00981343 A EP 00981343A EP 1155456 A1 EP1155456 A1 EP 1155456A1
Authority
EP
European Patent Office
Prior art keywords
region
esd
circuit
diode
power line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00981343A
Other languages
German (de)
English (en)
Inventor
Roy A. Colclaser
David M. Szmyd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of EP1155456A1 publication Critical patent/EP1155456A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention is directed to a device used for protecting circuits against electrostatic discharge (ESD), and more particularly, to an ESD diode having a reduced capacitance.
  • ESD electrostatic discharge
  • FIG 1 shows conventional circuit arrangement 100 which is protected against electrostatic discharge (ESD).
  • the device being protected is a circuit 110, which may be formed on a semiconductor substrate of an integrated circuit or chip.
  • the input 115 and output 120 of the circuit 110 are connected to input and output pads 125, 130, respectively, which in turn are connected to pins of the integrated circuit or chip.
  • the input 115 and output 120 of the circuit 110 are protected against an electrostatic discharge (ESD) using diodes Dl, D2, D3 and D4 connected between the input/output pads 125, 130 and power lines.
  • the power lines include a ground bus 135 and a power supply bus 140, which is connected to a voltage source for providing a positive voltage, referred to as Vcc.
  • each of the diodes Dl, D2, D3 and D4 is formed by a P-N junction, and may be integrated on the same chip or integrated circuit that includes the circuit 100 to be protected.
  • the diodes Dl, D2 For protection against positive ESD, the diodes Dl, D2 have their anodes (P-side) connected to the input 115 and output 120 of the circuit 110.
  • the cathodes (N-side) of the diodes Dl, D2 are connected to the power supply bus 140 having the positive voltage Vcc.
  • the diodes D3, D4 have their cathodes (N-side) connected to the input 115 and output 120 of the circuit 110.
  • FIG 1 shows the anode (P-side) of the diode Dl as numeral 145 and the cathode (N-side) as numeral 150. It is understood by those skilled in the art that the discussion of the diode Dl is for illustration purposes, and is equally applicable to all the diodes D1-D4. As is well known in the art, each diode (e.g., diode Dl) blocks current when reverse biased, which is when the cathode (N-side) 150 is made positive with respect to the anode (P-side) 145 until the cathode voltage is high enough to cause breakdown.
  • diode e.g., diode Dl
  • the current from the cathode 150 to the anode 145 is very low and is called leakage current.
  • the mode of operation is referred to as forward bias.
  • the voltage across the diode Dl is referred to as the forward bias voltage, which is the voltage from the anode 145 to the cathode 150. If the forward bias voltage is increased across the diode Dl, the current from the anode 145 to the cathode 150, referred to as the anode current, increases exponentially with the voltage as shown by the plot 410 shown in FIG 4.
  • the diodes D1-D4 provide an open circuit in the reverse direction or block current flow from the cathode 150 to the anode 145.
  • the diode Dl turns on in the forward direction, and provides a relatively low resistance path for current flow from the anode 145 or P-side to the cathode 150 or ⁇ -side.
  • ESD events can occur with either polarity between any pair of pins on an integrated circuit. ESD protection must therefore be provided from each input/output pin to both the power supply bus 140 and the ground bus 135 and to all other input/output pins.
  • ESD protection is required for both positive and negative polarities between the power supply bus 140 and the ground bus 135.
  • the ESD current passes through diode Dl to the power supply bus 140.
  • this ESD current passes to the ground bus 135 though a clamp structure 155 which is located between the power supply bus 140 and the ground bus 135.
  • the ESD current passes through diode D3 to the ground bus 135.
  • the ESD current passes through diodes Dl, D2 to the power supply bus 140.
  • the ESD current passes through the clamp structure 155 and through the diodes D3, D4 to the pad.
  • the ESD current passes through diode Dl to the power supply bus 140, through the power supply clamp 155 to the ground bus 135 and through the diode D4.
  • the ESD current passes through diode D2 to the power supply bus 140, through the power supply clamp 155 to the ground bus 135 and through the diode D3.
  • the ESD current passes through the power supply clamp 155.
  • the ESD current passes through one or more of the series diode strings Dl and D3 or D2 and D4.
  • the conventional ESD protected circuit arrangement 100 provides an effective protection scheme for many situations.
  • each diode Dl, D2, D3 and D4 provides a capacitive load on input/output signals which can significantly degrade the input and output signals and performance of the circuit 110, particularly at high frequencies.
  • the major disadvantage of the conventional diode Dl occurs during normal (non-ESD) operation.
  • the diodes Dl, D2 connected between the input or output pins or pads 125, 135 and the power supply line 140, as well as the diodes D3, D4 connected between ground 135 and the pads 125, 135, are reverse biased where an analogue input signal is biased between the power supply and ground.
  • Each of the diodes D1-D4 has a capacitance that is associated with the diode P-N junction where the capacitance depends on the area and the doping configuration. Part of the high frequency input signal is diverted through the diodes to circuitry other than the intended path. Reducing the size or area of the diodes reduces the capacitance, but it also reduces the level of ESD protection, since the level of ESD protection depends on the current density in the diode.
  • the object of the present invention is to provide an electrostatic discharge (ESD) protection device that significantly reduces the problems of conventional ESD protection devices.
  • the present invention accomplishes the above and other objects by providing an ESD protection device, referred to as an ESD diode for example, which protects a circuit against electrostatic discharge and allows proper operation, particularly at high frequencies.
  • the ESD diode has four adjacent regions. The first and third regions are formed from a semiconductor substrate having a P-type conductivity. The second and fourth regions are formed from the semiconductor substrate having an N-type conductivity. The first region is for connection to a signal terminal of the circuit being protected when the fourth region is connected to a positive power line of the circuit. The fourth region is for connection to the signal terminal when the first region is connected to the ground line or a negative power line of the circuit.
  • FIG 1 shows a conventional circuit arrangement which is protected against electrostatic discharge (ESD);
  • FIG 2 shows a circuit arrangement which is protected against ESD using ESD diodes according to present invention
  • FIG 3 shows one of the ESD diodes shown in FIG 2 in greater detail according to present invention
  • FIG 4 shows plots of the forward biased current-voltage characteristics of a conventional diode and the ESD diode according to present invention
  • FIG 5 shows an embodiment of the ESD diode with a resistor according to present invention
  • FIG 6 shows another embodiment of the ESD diode having a high gain region according to present invention.
  • FIG 2 shows a circuit arrangement 200 where the diodes D1-D4 shown in FIG 1 are replaced with devices that provide improved electrostatic discharge (ESD) protection.
  • diodes Dl, D2, D3, D4 are replaced with two terminal integrated structures referred to as ESD diodes 210, 215, 220, 225, respectively.
  • the anode 245 of the ESD diode 210 and the anode 255 of the ESD diode 210 are connected to the input 115 and output 120 of the circuit 110, respectively.
  • the cathodes 250, 260 of the ESD diodes 210, 215 are connected to the power supply bus 140.
  • the cathode 270 of the ESD diode 220 and the cathode 280 of the ESD diode 225 are connected to the input 115 and output 120 of the circuit 110, respectively.
  • the anodes 265, 275 of the ESD diodes 220, 225 are connected to the ground bus 135, which may be replaced with a bus that provides a voltage lower than the voltage of the power supply bus 140.
  • the voltage of the power supply bus 140 is a positive voltage Vcc and the bus 135 is either a ground bus or provides a negative voltage, for example.
  • ESD protection is provided in a fashion similar to the conventional circuit arrangement 100 shown in FIG 1.
  • the ESD devices 210, 215 protect the input 115 and output 120 of the circuit 110, respectively, against positive ESD with respect to the ground bus 135.
  • current from a positive ESD on the input 115 with respect to the ground bus 135 passes through the ESD diode 210 to the power supply bus 140.
  • FIG 3 shows one of the ESD diodes 210, 215, 220, 225 shown in FIG 2 in greater detail, such as the ESD diode 210 for example. It is understood by those skilled in the art that the discussion of the ESD diode 210 shown in FIG 3 is for illustration purposes, and is equally applicable to all the ESD diodes 210, 215, 220, 225 shown in FIG 2.
  • the ESD diode 210 is a two terminal PNPN device which has four regions 310, 320, 330, 340. The first and third regions 310, 330 are formed by doping a semiconductor substrate, such as silicon, so that it has a P-type conductivity.
  • the silicon substrate may be doped with boron to achieve the P-type conductivity.
  • the second and fourth regions 320, 340 are formed by doping the semiconductor substrate so that it has an N-type conductivity, where the silicon is doped with arsenic or phosphorus for example.
  • the first and fourth regions 310, 340 are connected to the ESD diode terminals, where the first region 310 is connected to the anode terminal 245 and the fourth region 340 is the cathode terminal 250.
  • the first region 310 or anode 245, 255 is for connection to a signal terminal, e.g., input or output terminal 115, 120 of the circuit 110 when the fourth region 340 or cathode 250, 260 is connected to the positive power line 140.
  • the fourth region 340 or cathode 270, 280 is for connection to the signal terminal when the first region 310 or anode 265, 275 is connected to the ground line 135 which, instead of ground, may provide a lower voltage level than Vcc, such as a negative voltage.
  • the ESD diode 210 operates as follows. In the reverse bias mode, where the cathode 250 or fourth region 340 is made positive with respect to the anode 245 or first region 310, the ESD diode 210 blocks current similar to a conventional diode Dl (FIG 1). In the forward bias mode, the anode 245 is made positive with respect to the cathode 250, the ESD diode 210 also blocks current, until the avalanche voltage V A of the center junction 350 is reached, where the center junction 350 is the P-N junction between the third and second regions 330, 320.
  • FIG 4 shows plots of the forward biased current- voltage characteristics of a conventional diode Dl (FIG 1) and the ESD diode 210 (FTGs 2-3), where the conventional diode plot is referenced by numeral 410, and the ESD diode plot is referenced by numeral 420.
  • V A avalanche voltage
  • the avalanche voltage V A can range from 2 to 30 volts, and the low voltage V L is approximately 1 volt.
  • the ON state of the ESD diode 210 is maintained until the current is forced to zero by external means, such as when the anode voltage drops below the cathode voltage plus a certain amount, e.g., plus the low voltage state V L of approximately 1 volt.
  • FIG 5 shows an embodiment of the ESD diode 210 where a resistor R is connected between the two P regions 310, 330, for triggering ON the ESD diode 210.
  • the resistor R makes the ESD diode 210 act in a manner similar to a conventional diode Dl or P-N junction.
  • the voltage drops V T and V L across the conventional diode Dl and the ESD diode 210, respectively, are shown in FIG 4.
  • the disadvantage of the higher ESD diode voltage drop V as compared to the voltage drop V T of the conventional diode Dl is not significant, and the ESD diode 210 is well suited to carry the ESD current. This disadvantage is more than offset by the advantage during normal (non-ESD) operation, namely, of having a reduced capacitance.
  • the ESD diode 210 has two reverse biased junctions 360, 370 and one forward biased junction 350 connected in series which are equivalent to three capacitances connected in series. The series connection of the junction capacitances results in lower total capacitance.
  • the lower capacitance permits use of the ESD diode 210 at higher frequencies than that for a conventional diode configuration Dl.
  • the ESD diode 210 operates properly up to 30GHz and higher. It is customary in most processes to form the ESD protection devices without requiring additional process steps. The process is optimized for the conventional transistors and passive components, and the ESD devices are often not optimized because they make are formed with the basic process flow. For example, a frequently used protection device in CMOS is a lateral NPN bipolar transistor that is a parasitic element that occurs when an N- channel MOSFET is formed.
  • PNPN device When a PNPN device is formed in a process that is optimized to make NPN bipolar transistors and/or CMOS transistors, there are usually several ways of forming the PNPN device, for example, using different combinations of wells and diffusions. Some of the possible PNPN devices formed in a given process may be better for use as ESD protection than others. In other situations, adding components like the resistor R may be necessary to make the ESD protection function as desired.
  • FIG 5 shows an embodiment of the resistor R shown in FIG 5 where the resistor R shown in FIG 5 is not used. Instead, the process allows a configuration of the geometry and doping concentration of regions 340, 330' and 320 that results in a high gain NPN transistor 440.
  • the ESD diode 210' is formed by first forming the high gain NPN transistor 440 like a conventional transistor in the process. Next, an additional P-type layer 310 is formed over the high gain NPN transistor to form the ESD diode 210'.
  • the ESD diode may be formed using a bipolar or a complementary metal oxide semiconductor (CMOS) process or a combination of a bipolar-CMOS (bi-CMOS) process as is well known in the art.
  • CMOS complementary metal oxide semiconductor
  • bi-CMOS bipolar-CMOS
  • the resistor R shown in FIG 5 is not needed for proper operation of the ESD diode when it is formed by a high performance bipolar process where a high gain NPN transistor is formed.
  • the resistor R may be added if desired.
  • the conventional integrated junction diodes D1-D4, shown in FIG 1, are replaced with the two terminal integrated structure 210, 210' shown in FIGs 3 and 5-6.
  • the two terminal integrated structure or ESD diode performs a function similar to a conventional diode Dl but is better suited to carry high currents and has less capacitance than a conventional diode Dl with similar current carrying capabilities.
  • the four regions 310, 320, 330, 340 may be formed over each other, where three junctions capacitors are connected in series thus resulting in a reduced capacitance using the same area. This allows the ESD diode to shunt large ESD currents and operate at high frequencies.
  • Conventional PNPN devices that have been used for ESD protection are typically silicon controlled rectifier (SCR) type devices and have more than two terminals, instead of only the two terminals of the ESD diode 310, namely the cathode and the anode.
  • the conventional PNPN devices are connected in an opposite direction than the ESD diode. For example, if the conventional PNPN devices are connected to provide positive ESD protection, thus replacing the ESD diodes 210, 215 (FIG 2), then the P-region of the conventional PNPN devices is connected to the power line 140, while the N-region is connected to the input or output terminals 115, 120.
  • the conventional PNPN devices are connected to provide negative ESD protection, thus replacing the ESD diodes 220, 225, then the N-region of the conventional PNPN devices is connected to the ground line 135, while the P-region is connected to the input or output terminals 115, 120.
  • the conventional PNPN devices typically block current, both in the forward and reverse directions, and need to be triggered ON by an additional signal or voltage applied to an additional terminal before ESD current is shunted. Typically, efforts have been made to reduce the trigger voltage of conventional PNPN devices.
  • the ESD diode is not blocking in the forward direction, either due to the geometry and doping or due to the use of resistor R.

Abstract

Une diode ESD protège un circuit contre la décharge électrostatique (ESD). La diode ESD comporte quatre régions adjacentes. Les première et troisième régions sont formées au moyen du dopage d'un substrat semi-conducteur de manière à ce qu'il présente une conductivité de type P. Les deuxième et quatrième régions sont formées au moyen du dopage du substrat semi-conducteur de manière à ce qu'il présente une conductivité de type N. La première région est prévue pour être connectée à une borne de signal du circuit protégé lorsque la quatrième région est connectée à une ligne d'énergie positive du circuit. La quatrième région est prévue pour être connectée à une borne de signal lorsque la première région est connectée à la ligne de terre ou à une ligne d'énergie négative du circuit.
EP00981343A 1999-12-17 2000-12-05 Structure de diode esd amelioree Withdrawn EP1155456A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/466,411 US6674129B1 (en) 1999-12-17 1999-12-17 ESD diode structure
US466411 1999-12-17
PCT/EP2000/012259 WO2001045173A1 (fr) 1999-12-17 2000-12-05 Structure de diode esd amelioree

Publications (1)

Publication Number Publication Date
EP1155456A1 true EP1155456A1 (fr) 2001-11-21

Family

ID=23851652

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00981343A Withdrawn EP1155456A1 (fr) 1999-12-17 2000-12-05 Structure de diode esd amelioree

Country Status (7)

Country Link
US (1) US6674129B1 (fr)
EP (1) EP1155456A1 (fr)
JP (1) JP2003517215A (fr)
KR (1) KR100678781B1 (fr)
CN (1) CN1210801C (fr)
TW (1) TW477055B (fr)
WO (1) WO2001045173A1 (fr)

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Also Published As

Publication number Publication date
CN1210801C (zh) 2005-07-13
TW477055B (en) 2002-02-21
WO2001045173A1 (fr) 2001-06-21
KR100678781B1 (ko) 2007-02-05
CN1347568A (zh) 2002-05-01
US6674129B1 (en) 2004-01-06
JP2003517215A (ja) 2003-05-20
KR20010102167A (ko) 2001-11-15

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