WO2001045173A1 - Improved esd diode structure - Google Patents
Improved esd diode structure Download PDFInfo
- Publication number
- WO2001045173A1 WO2001045173A1 PCT/EP2000/012259 EP0012259W WO0145173A1 WO 2001045173 A1 WO2001045173 A1 WO 2001045173A1 EP 0012259 W EP0012259 W EP 0012259W WO 0145173 A1 WO0145173 A1 WO 0145173A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- region
- esd
- circuit
- diode
- power line
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000001960 triggered effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00981343A EP1155456A1 (en) | 1999-12-17 | 2000-12-05 | Improved esd diode structure |
JP2001545372A JP2003517215A (en) | 1999-12-17 | 2000-12-05 | Improved ESD diode structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/466,411 US6674129B1 (en) | 1999-12-17 | 1999-12-17 | ESD diode structure |
US09/466,411 | 1999-12-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001045173A1 true WO2001045173A1 (en) | 2001-06-21 |
Family
ID=23851652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2000/012259 WO2001045173A1 (en) | 1999-12-17 | 2000-12-05 | Improved esd diode structure |
Country Status (7)
Country | Link |
---|---|
US (1) | US6674129B1 (en) |
EP (1) | EP1155456A1 (en) |
JP (1) | JP2003517215A (en) |
KR (1) | KR100678781B1 (en) |
CN (1) | CN1210801C (en) |
TW (1) | TW477055B (en) |
WO (1) | WO2001045173A1 (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004050637A (en) * | 2002-07-19 | 2004-02-19 | Canon Inc | Substrate for inkjet head, inkjet head, and inkjet recorder employing inkjet head |
US6891702B1 (en) * | 2002-10-31 | 2005-05-10 | Western Digital Technologies, Inc. | Method and devices for providing magnetoresistive heads with protection from electrostatic discharge and electric overstress events |
US7009253B2 (en) * | 2003-08-06 | 2006-03-07 | Esd Pulse, Inc. | Method and apparatus for preventing microcircuit thermo-mechanical damage during an ESD event |
US6853036B1 (en) * | 2003-08-06 | 2005-02-08 | Esd Pulse, Inc. | Method and apparatus for preventing microcircuit dynamic thermo-mechanical damage during an ESD event |
DE102004007655B8 (en) * | 2004-02-17 | 2013-10-10 | Infineon Technologies Ag | Semiconductor circuits with ESD protection device with an ESD protection circuit contacted with a substrate or guard ring contact |
US20060205170A1 (en) * | 2005-03-09 | 2006-09-14 | Rinne Glenn A | Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices |
JP2007018198A (en) * | 2005-07-06 | 2007-01-25 | Sony Corp | Device for generating index information with link information, device for generating image data with tag information, method for generating index information with link information, method for generating image data with tag information, and program |
US7932615B2 (en) * | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
US20070223870A1 (en) * | 2006-03-23 | 2007-09-27 | Seagate Technology Llc | Single board digital video system |
US7592673B2 (en) * | 2006-03-31 | 2009-09-22 | Freescale Semiconductor, Inc. | ESD protection circuit with isolated diode element and method thereof |
US9679602B2 (en) | 2006-06-14 | 2017-06-13 | Seagate Technology Llc | Disc drive circuitry swap |
US9305590B2 (en) | 2007-10-16 | 2016-04-05 | Seagate Technology Llc | Prevent data storage device circuitry swap |
US8537512B2 (en) * | 2009-02-26 | 2013-09-17 | Freescale Semiconductor, Inc. | ESD protection using isolated diodes |
US9203237B2 (en) * | 2012-04-24 | 2015-12-01 | Nxp B.V. | Protection circuit |
US9059324B2 (en) | 2013-06-30 | 2015-06-16 | Texas Instruments Incorporated | Bi-directional ESD diode structure with ultra-low capacitance that consumes a small amount of silicon real estate |
US9594172B1 (en) * | 2013-09-09 | 2017-03-14 | The United States Of America, As Represented By The Secretary Of The Navy | Solid-state spark chamber for detection of radiation |
US9472511B2 (en) * | 2014-01-16 | 2016-10-18 | Cypress Semiconductor Corporation | ESD clamp with a layout-alterable trigger voltage and a holding voltage above the supply voltage |
US9887188B2 (en) * | 2015-01-20 | 2018-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electro-static discharge structure, circuit including the same and method of using the same |
EP3067930B1 (en) | 2015-03-09 | 2021-08-11 | Nexperia B.V. | Data transmission system |
CN105162442B (en) * | 2015-10-08 | 2018-12-21 | 重庆中科芯亿达电子有限公司 | A kind of power tube drive integrated circult |
US10504886B1 (en) * | 2018-09-05 | 2019-12-10 | Hong Kong Applied Science and Technology Research Institute Company, Limited | Low-capacitance electro-static-discharge (ESD) protection structure with two floating wells |
CN112802836A (en) * | 2019-11-13 | 2021-05-14 | 瑞昱半导体股份有限公司 | Integrated circuit and electrostatic discharge protection method |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0032046A2 (en) * | 1979-12-27 | 1981-07-15 | Fujitsu Limited | Circuitry for protecting a semiconductor device against static electricity |
US4567500A (en) * | 1981-12-01 | 1986-01-28 | Rca Corporation | Semiconductor structure for protecting integrated circuit devices |
US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
EP0477393A1 (en) * | 1990-09-24 | 1992-04-01 | Siemens Aktiengesellschaft | Input protection structure for integrated circuits |
US5754380A (en) * | 1995-04-06 | 1998-05-19 | Industrial Technology Research Institute | CMOS output buffer with enhanced high ESD protection capability |
US5936282A (en) * | 1994-04-13 | 1999-08-10 | Kabushiki Kaisha Toshiba | Semiconductor device having input protection circuit |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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US4484244A (en) | 1982-09-22 | 1984-11-20 | Rca Corporation | Protection circuit for integrated circuit devices |
FR2566582B1 (en) | 1984-06-22 | 1987-02-20 | Silicium Semiconducteur Ssc | TWO-WAY PROTECTION DEVICE TRIGGERED BY AVALANCHE |
US5012317A (en) | 1986-04-11 | 1991-04-30 | Texas Instruments Incorporated | Electrostatic discharge protection circuit |
FR2598043A1 (en) | 1986-04-25 | 1987-10-30 | Thomson Csf | SEMICONDUCTOR COMPONENT FOR OVERVOLTAGE AND OVERCURRENT PROTECTION |
CA1330451C (en) | 1989-03-15 | 1994-06-28 | Francis Yun-Tai Hung | Solid state overcurrent protection device |
DE4200884A1 (en) * | 1991-01-16 | 1992-07-23 | Micron Technology Inc | Integrated semiconductor circuit with connector to external circuit - has bipolar transistor with collector terminal coupled to bus, and emitter and base terminals to reference potential |
FR2770341B1 (en) * | 1997-10-24 | 2000-01-14 | Sgs Thomson Microelectronics | PROTECTION AGAINST ELECTROSTATIC DISCHARGES AT LOW THRESHOLD LEVEL |
DE4229307A1 (en) | 1992-09-02 | 1994-03-03 | D & D Hardware Software Und Do | Conductor component for protecting microelectronic system from overvoltage - comprises bidirectional thyristor diode with highly-doped surface region and high gradient of free charge carrier at predefined distance from oppositely doped base region |
US5440151A (en) * | 1993-04-09 | 1995-08-08 | Matra Mhs | Electrostatic discharge protection device for MOS integrated circuits |
US5446295A (en) * | 1993-08-23 | 1995-08-29 | Siemens Components, Inc. | Silicon controlled rectifier with a variable base-shunt resistant |
US5479031A (en) | 1993-09-10 | 1995-12-26 | Teccor Electronics, Inc. | Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value |
FR2719721B1 (en) | 1994-05-09 | 1996-09-20 | Sgs Thomson Microelectronics | Telephone line interface protection. |
US5455436A (en) | 1994-05-19 | 1995-10-03 | Industrial Technology Research Institute | Protection circuit against electrostatic discharge using SCR structure |
US5600525A (en) | 1994-08-17 | 1997-02-04 | David Sarnoff Research Center Inc | ESD protection circuit for integrated circuit |
GB2293484B (en) | 1994-09-08 | 1998-08-19 | Texas Instruments Ltd | Improved lightning overvoltage protector |
JP2850801B2 (en) | 1995-07-28 | 1999-01-27 | 日本電気株式会社 | Semiconductor element |
FR2737343B1 (en) * | 1995-07-28 | 1997-10-24 | Ferraz | CURRENT LIMITING COMPONENT AND METHOD FOR PRODUCING THE SAME |
US5808342A (en) | 1996-09-26 | 1998-09-15 | Texas Instruments Incorporated | Bipolar SCR triggering for ESD protection of high speed bipolar/BiCMOS circuits |
US6469325B1 (en) | 1996-11-07 | 2002-10-22 | Hitachi, Ltd. | Semiconductor integrated circuit device and its manufacture |
US6016002A (en) * | 1996-12-20 | 2000-01-18 | Texas Instruments Incorporated | Stacked silicon-controlled rectifier having a low voltage trigger and adjustable holding voltage for ESD protection |
DE19743240C1 (en) * | 1997-09-30 | 1999-04-01 | Siemens Ag | Integrated semiconductor circuit with protective structure to protect against electrostatic discharge |
FR2773265B1 (en) | 1997-12-30 | 2000-03-10 | Sgs Thomson Microelectronics | SUBSCRIBER INTERFACE PROTECTION CIRCUIT |
US6144542A (en) * | 1998-12-15 | 2000-11-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD bus lines in CMOS IC's for whole-chip ESD protection |
-
1999
- 1999-12-17 US US09/466,411 patent/US6674129B1/en not_active Expired - Lifetime
-
2000
- 2000-12-05 KR KR1020017010364A patent/KR100678781B1/en not_active IP Right Cessation
- 2000-12-05 CN CNB008062943A patent/CN1210801C/en not_active Expired - Fee Related
- 2000-12-05 JP JP2001545372A patent/JP2003517215A/en not_active Withdrawn
- 2000-12-05 EP EP00981343A patent/EP1155456A1/en not_active Withdrawn
- 2000-12-05 WO PCT/EP2000/012259 patent/WO2001045173A1/en active IP Right Grant
- 2000-12-08 TW TW089126223A patent/TW477055B/en not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0032046A2 (en) * | 1979-12-27 | 1981-07-15 | Fujitsu Limited | Circuitry for protecting a semiconductor device against static electricity |
US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
US4567500A (en) * | 1981-12-01 | 1986-01-28 | Rca Corporation | Semiconductor structure for protecting integrated circuit devices |
EP0477393A1 (en) * | 1990-09-24 | 1992-04-01 | Siemens Aktiengesellschaft | Input protection structure for integrated circuits |
US5936282A (en) * | 1994-04-13 | 1999-08-10 | Kabushiki Kaisha Toshiba | Semiconductor device having input protection circuit |
US5754380A (en) * | 1995-04-06 | 1998-05-19 | Industrial Technology Research Institute | CMOS output buffer with enhanced high ESD protection capability |
Non-Patent Citations (1)
Title |
---|
KER M -D ET AL: "A GATE-COUPLED PTLSCR/NTLSCR ESD PROTECTION CIRCUIT FOR DEEP-SUBMICRON LOW-VOLTAGE CMOS IC'S", IEEE JOURNAL OF SOLID-STATE CIRCUITS,IEEE INC. NEW YORK,US, vol. 32, no. 1, 1997, pages 38 - 50, XP000691835, ISSN: 0018-9200 * |
Also Published As
Publication number | Publication date |
---|---|
CN1210801C (en) | 2005-07-13 |
TW477055B (en) | 2002-02-21 |
KR100678781B1 (en) | 2007-02-05 |
EP1155456A1 (en) | 2001-11-21 |
CN1347568A (en) | 2002-05-01 |
US6674129B1 (en) | 2004-01-06 |
JP2003517215A (en) | 2003-05-20 |
KR20010102167A (en) | 2001-11-15 |
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