GB2293484B - Improved lightning overvoltage protector - Google Patents
Improved lightning overvoltage protectorInfo
- Publication number
- GB2293484B GB2293484B GB9418145A GB9418145A GB2293484B GB 2293484 B GB2293484 B GB 2293484B GB 9418145 A GB9418145 A GB 9418145A GB 9418145 A GB9418145 A GB 9418145A GB 2293484 B GB2293484 B GB 2293484B
- Authority
- GB
- United Kingdom
- Prior art keywords
- overvoltage protector
- lightning overvoltage
- improved lightning
- improved
- protector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001012 protector Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/044—Physical layout, materials not provided for elsewhere
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M3/00—Automatic or semi-automatic exchanges
- H04M3/18—Automatic or semi-automatic exchanges with means for reducing interference or noise; with means for reducing effects due to line faults with means for protecting lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9418145A GB2293484B (en) | 1994-09-08 | 1994-09-08 | Improved lightning overvoltage protector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9418145A GB2293484B (en) | 1994-09-08 | 1994-09-08 | Improved lightning overvoltage protector |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9418145D0 GB9418145D0 (en) | 1994-10-26 |
GB2293484A GB2293484A (en) | 1996-03-27 |
GB2293484B true GB2293484B (en) | 1998-08-19 |
Family
ID=10761066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9418145A Expired - Fee Related GB2293484B (en) | 1994-09-08 | 1994-09-08 | Improved lightning overvoltage protector |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2293484B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6501630B1 (en) | 1999-12-17 | 2002-12-31 | Koninklijke Philips Electronics N.V. | Bi-directional ESD diode structure |
US6674129B1 (en) | 1999-12-17 | 2004-01-06 | Koninklijke Phillips Electronics N.V. | ESD diode structure |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2184884A (en) * | 1985-12-20 | 1987-07-01 | Philips Electronic Associated | Bipolar semiconductor device |
GB2256744A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A monolithic semiconductor component for transient voltage suppression |
EP0518790A1 (en) * | 1991-06-11 | 1992-12-16 | STMicroelectronics S.A. | Bidirectional protection part |
GB2263579A (en) * | 1992-01-24 | 1993-07-28 | Texas Instruments Ltd | An integrated circuit with intermingled electrodes |
-
1994
- 1994-09-08 GB GB9418145A patent/GB2293484B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2184884A (en) * | 1985-12-20 | 1987-07-01 | Philips Electronic Associated | Bipolar semiconductor device |
GB2256744A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A monolithic semiconductor component for transient voltage suppression |
EP0518790A1 (en) * | 1991-06-11 | 1992-12-16 | STMicroelectronics S.A. | Bidirectional protection part |
GB2263579A (en) * | 1992-01-24 | 1993-07-28 | Texas Instruments Ltd | An integrated circuit with intermingled electrodes |
Also Published As
Publication number | Publication date |
---|---|
GB2293484A (en) | 1996-03-27 |
GB9418145D0 (en) | 1994-10-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20110908 |