EP1135806A1 - Element a semiconducteur pouvant etre commande, comprenant une resistance de grille en serie - Google Patents

Element a semiconducteur pouvant etre commande, comprenant une resistance de grille en serie

Info

Publication number
EP1135806A1
EP1135806A1 EP98964378A EP98964378A EP1135806A1 EP 1135806 A1 EP1135806 A1 EP 1135806A1 EP 98964378 A EP98964378 A EP 98964378A EP 98964378 A EP98964378 A EP 98964378A EP 1135806 A1 EP1135806 A1 EP 1135806A1
Authority
EP
European Patent Office
Prior art keywords
resistance
component
gate electrode
branches
arrangement according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98964378A
Other languages
German (de)
English (en)
Inventor
Frank Pfirsch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1135806A1 publication Critical patent/EP1135806A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08128—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes

Definitions

  • the present invention relates to controllable semiconductor components which are controlled by a gate electrode.
  • the invention relates to field effect transistors such as MOSFETs and IGBTs.
  • Semiconductor components are their behavior when switching on and off.
  • the aim in the development of circuits with controllable semiconductor components is to obtain components and circuits that are as optimized and robust as possible.
  • the current density that can be switched off should be as high as possible.
  • at least the current flowing at the maximum gate voltage in the event of a short circuit should be controlled.
  • a particularly critical case is when at the beginning of the shutdown process, for example an IGBT, there is only a low collector-emitter voltage compared to the blocking capability of the semiconductor component and then shutdown with a low gate series resistance to a high voltage with an inductive load.
  • a very high hole current flows for a short time, which can lead to the destruction of the semiconductor component.
  • the parasitic bipolar transistor or thyristor of the arrangement is switched on. This effect is called latch-up. This effect is particularly problematic with IGBTs, especially those with a trench-shaped gate electrode.
  • a first solution to this special problem is to make the semiconductor device itself insensitive to latch-up.
  • This happens e.g. B. in that Semiconductor component doping regions with a very high conductivity are provided, or the emitter efficiency of the component is minimized.
  • Such measures are described, for example, in T. Laska et al, "A Low Loss / Highly Rugged IGBT Generation - Based On A Seif Aligned Process ith Double Implanted N / N + -Em ⁇ tter", Proc. ISPSD 94, Davos, 1994, pages 171 to 175.
  • the conductivity of the p-body region below the n-source is set very high, or that the emitter efficiency of the n-source is minimized.
  • a further possibility for influencing the switch-on or switch-off process is to provide the semiconductor component with a gate series resistor.
  • Such gate series resistors are known, for example, from DE 195 12 799.
  • No. 5,525,925 also discloses a parallel connection of a resistor and a diode chain, which is connected in front of the gate electrode and enables the semiconductor component to be switched off in two phases with different time constants.
  • the problem with these solutions from the prior art is that either the switch-on losses increase sharply with the size of the gate series resistor or relatively complex circuits are required to optimize the switch-on and switch-off behavior.
  • the object of the present invention is therefore to provide the simplest possible arrangement with a controllable semiconductor component which enables the component to be switched on and off in an optimized manner. This object is achieved by the features of the present patent claim 1.
  • the semiconductor component consists of at least two doping regions embedded in a semiconductor substrate and at least one gate electrode for controlling the semiconductor component, which is separated from the doping regions by an insulation layer.
  • the gate electrode is now integrated with a resistance circuit, which has at least two resistance branches connected in parallel, part of the entire resistance branches having at least one resistance element and possibly further components, the remaining part of the resistance branches has at least one resistance element and a component with rectifying behavior has, but may also have other components.
  • the one resistance branch thus has at least one resistance element
  • the other resistance branch has at least one resistance element and additionally a component with rectifying behavior.
  • more than two resistance branches can also be provided.
  • Adaptation of the components with rectifying behavior in particular with regard to their own resistance, can be dispensed with completely in the remaining part of the resistance branches on a resistance element.
  • the rectifying components in part of the resistance branches can now be used to ensure that a current flows through only part of the resistance branches in the direction of the current flow through the resistance circuit.
  • the resistance circuit has one
  • the rectifying component is switched in the respective resistance branch in such a way that a charge is transported to the gate electrode hm in the forward direction of the component, whereas a charge is transported away from the gate electrode while the component is being is done.
  • the resistance branch is thus blocked for a charge transport away from the gate electrode.
  • the resistance for the charge transport away from the gate electrode is thus only determined by the remaining resistance branches without rectifying components.
  • the resistance is determined by all resistance branches and is the total resistance of the parallel connection of the Emzel resistors.
  • the resistance in the direction of the gate electrode hm is thus significantly lower than the resistance during charge transport away from the gate electrode.
  • the gate electrode is thus charged much faster than the gate electrode is discharged.
  • the switch-off process is thus significantly delayed compared to the switch-on process.
  • the current flow in the semiconductor component in particular the hole current component, can be considerably reduced and, in particular, a latch-up of the component can be prevented.
  • the resistance branches can be provided. Diodes are preferably used for such components. However, it can also be provided, for example, to provide a transistor arrangement such that it exhibits rectifying behavior. It is not absolutely necessary for the component to have the best possible rectifying behavior. For example, it is already sufficient for the component in the resistor branch to have a leakage current in the blocking direction that is less than 20% of the current in the forward direction that the component has in the resistor branch. It is only essential for the function of the arrangement that the total resistance of the resistance circuit during the switch-on process can be designed significantly different from the total resistance during the switch-off process. Ideally, the
  • Total resistance of the first part of the resistance branches i.e. those resistance branches without rectifiers, at least double the total resistance of the other resistance branches, that is to say those resistance branches with a rectifier.
  • the resistance circuit can be implemented in different ways. For example, it can be provided that the resistance circuit is formed by polysilicon layers that are separated from the semiconductor substrate by one or more insulation layers. In particular, it can be provided that the insulation layer is formed by the same layer that also separates the gate electrode from the semiconductor substrate. The same layer that is used to manufacture the gate electrode can be used as the polysilicon layer for forming the resistance circuit.
  • the resistance circuit is formed directly in the semiconductor substrate by generating corresponding diffusion regions.
  • the generally customary procedures are to be applied.
  • FIG. 1 Circuit diagram of the semiconductor device with resistance circuit
  • FIG. 2 Schematic representation of an IGBT with a trench-shaped gate electrode
  • FIG. 3 Schematic representation of an IGBT with a trench-shaped gate electrode and polysilicon resistor arrangement
  • FIG. 4 top view of the resistor arrangement according to FIG. 3
  • the circuit diagram according to FIG. 1 shows a controllable semiconductor component 1, the gate electrode of which is connected via a conductive lead 7 to a voltage source V Q J? connected is.
  • a resistance circuit 8 is also provided in the conductive feed 7, which consists of two resistance branches 9, 10 connected in parallel.
  • a resistor 11 with a resistance value R1 is provided in the first resistance branch 9.
  • the second resistance branch 10 has a resistor 12 with a resistance value R2 and a diode 13.
  • the diode 13 is connected such that a charge is transported to the gate electrode of the semiconductor component 1 in the forward direction of the diode 13.
  • the value of Rl should ideally be at least twice, for example about ten times the value of R2.
  • Rl For a semiconductor component 1 which is provided for a power circuit of 25 A, a value for Rl of approximately 50 ohms can be selected, for R2, on the other hand, a value of approximately 5 ohms.
  • R2 can also assume a much smaller value, conversely, R1 can also assume larger values.
  • the rectifier behavior of the diode 13 need not be particularly optimized. It is sufficient if the leakage current is in
  • the blocking direction of the diode 13 is not higher than 20% of the current in the forward direction, the current in the forward direction being determined by the resistance element 12 or by its value R2.
  • An n-channel trench IGBT ie an IGBT with a trench-shaped gate electrode, is provided as the semiconductor component 1 in the present example.
  • This has an n ⁇ substrate 2, in which a p-base region 3 and an n + source region 4 are embedded as doping regions. These adjoin a trench which is lined with an insulation layer ⁇ and filled with a polysilicon layer 5 that acts as a gate electrode.
  • the component On the opposite side of the semiconductor substrate, the component has a p + anode region as the drain region or collector region.
  • the source region 4 is also referred to as the emitter region.
  • FIG. 3 now shows another cross section through an IGBT 1 according to the invention and a branch of the
  • Resistor arrangement 8 which has a diode 13.
  • Polysilicon layer formed and can be generated simultaneously with the gate electrode 5, guided away from the gate electrode 5.
  • the polysilicon layer also forms the resistance element 12 of the resistor arrangement 8, which is designed as n-polysilicon.
  • a p-polysilicon layer adjoins this resistance element, as a result of which the pn junction of a diode 13 is formed.
  • the resistor arrangement 8 is also through the insulation layer 6 from the semiconductor substrate 2 or
  • the resistor arrangement can also be separated from the semiconductor substrate by means of other or further insulation layers.
  • the resistance arrangement 8 in turn borders on a contact area 14 for contacting the gate electrode, which is formed by a metallization.
  • a further metallization 15 ensures that the parallel resistance branches are connected to one another on the gate side to form a parallel connection.
  • the two gate electrodes 5 shown in FIG. 3 are preferably formed as part of a transistor cell, ie there are several trenches in which gate electrodes are located located, transistor cells limited.
  • the ditches cross and form closed cells. In principle, these can have any shape, such as rectangular, hexagonal or square.
  • the gate electrodes in the trench of a cell are conductively connected to one another or there is a continuous gate electrode structure through the trench of a cell.
  • the gate electrodes of individual cells can also be connected to one another.
  • Exactly one resistor arrangement 8 can now be provided for each of the transistor cells or for each arrangement of interconnected transistor cells. Basically, however, several such resistor arrangements 8 can be provided instead of just one.
  • Figure 4 shows the whole in a top view
  • Resistor arrangement 8 with the conductive feed 7 to the gate electrode and the adjacent contact area 14 for contacting the resistor arrangement 8 and the metallization 15 for connecting the resistance branches on the gate side.
  • the entire resistance circuit 8 itself consists of an n-polysilicon resistor 11 with a resistance value R1, which is conductively connected to the conductive supply 7 and to the contact area 14.
  • an n-polysilicon resistor 12 with a resistance value R2 is connected, which is connected to a p-
  • the pn junction 13 forms a diode which is connected in series with the resistor 12 and adjoins the contact area 14.
  • the specific configuration of the entire arrangement depends, among other things, on the requirements for the layout of the semiconductor chip.
  • the resistor arrangement 8 and the contacting surface 14 are provided in the interior of the chip or alternatively are provided on the edge of the chip.
  • the conductive supply 7 and the insulation layer 6 can also be modified.
  • the invention is also the same not only limited to semiconductor devices with trench-shaped gate electrodes.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un dispositif qui comprend un élément à semiconducteur (1) pouvant être commandé et présentant: au moins deux zones de dopage (3, 4) noyées dans un substrat semiconducteur (2), au moins une électrode de grille (5) servant à commander l'élément à semiconducteur, et une ligne d'amenée conductrice (7) menant à l'électrode de grille (5). Un circuit résistif (8) comportant au moins deux branches résistives (9, 10) montées en parallèle est prévu dans cette ligne d'amenée (7). Une première partie des branches résistives (9) présente au moins un élément résistif (11), et la partie restante des branches résistives (10) présente au moins un élément résistif (12) ainsi qu'un composant (13) présentant des propriétés de redressement.
EP98964378A 1998-12-03 1998-12-03 Element a semiconducteur pouvant etre commande, comprenant une resistance de grille en serie Withdrawn EP1135806A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE1998/003562 WO2000033380A1 (fr) 1998-12-03 1998-12-03 Element a semiconducteur pouvant etre commande, comprenant une resistance de grille en serie

Publications (1)

Publication Number Publication Date
EP1135806A1 true EP1135806A1 (fr) 2001-09-26

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ID=6918699

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98964378A Withdrawn EP1135806A1 (fr) 1998-12-03 1998-12-03 Element a semiconducteur pouvant etre commande, comprenant une resistance de grille en serie

Country Status (2)

Country Link
EP (1) EP1135806A1 (fr)
WO (1) WO2000033380A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4846106B2 (ja) * 2001-02-16 2011-12-28 三菱電機株式会社 電界効果型半導体装置及びその製造方法
JP2010153636A (ja) 2008-12-25 2010-07-08 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
DE102009020126A1 (de) * 2009-05-06 2010-11-18 Siemens Aktiengesellschaft Elektrische Einrichtung mit einem IGBT
JP2011109775A (ja) * 2009-11-16 2011-06-02 Toyota Motor Corp コンバータ制御装置
US9041120B2 (en) 2013-07-25 2015-05-26 Infineon Technologies Ag Power MOS transistor with integrated gate-resistor
JP6223918B2 (ja) * 2014-07-07 2017-11-01 株式会社東芝 半導体装置
EP3136599A1 (fr) * 2015-08-26 2017-03-01 Siemens Aktiengesellschaft Circuit dote de transistor a effet de terrain et commande par inductivite
JP2022174830A (ja) * 2021-05-12 2022-11-25 キヤノン株式会社 電源装置及び画像形成装置

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US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element
US5525925A (en) * 1992-09-25 1996-06-11 Texas Instruments Incorporated Simple power MOSFET low side driver switch-off circuit with limited di/dt and fast response
DE4236334A1 (de) * 1992-10-28 1994-05-05 Bosch Gmbh Robert Monolithisch integriertes MOS-Endstufenbauteil mit einer Überlast-Schutzeinrichtung
DE4237489A1 (de) * 1992-11-06 1994-05-11 Bosch Gmbh Robert Schaltung zum Schutz eines MOSFET-Leistungstransistors
DE69420327T2 (de) * 1993-06-22 2000-03-30 Koninkl Philips Electronics Nv Halbleiter-Leistungsschaltung
EP0680089A1 (fr) * 1994-04-28 1995-11-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Dispositif semi-conducteur de puissance comprenant une structure de circuit intégré de protection contre des surtensions, et procédé de fabrication associé
EP0814564A1 (fr) * 1996-06-20 1997-12-29 ANSALDO INDUSTRIA S.p.A. Circuit de commutation électronique avec réduction des transitoires de commutation
DE19811297B4 (de) * 1997-03-17 2009-03-19 Fuji Electric Co., Ltd., Kawasaki MOS-Halbleitervorrichtung mit hoher Durchbruchspannung

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Also Published As

Publication number Publication date
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