EP1134815A3 - Magnetowiderstandseffektvorrichtung und Herstellungsverfahren desselben - Google Patents
Magnetowiderstandseffektvorrichtung und Herstellungsverfahren desselben Download PDFInfo
- Publication number
- EP1134815A3 EP1134815A3 EP01113584A EP01113584A EP1134815A3 EP 1134815 A3 EP1134815 A3 EP 1134815A3 EP 01113584 A EP01113584 A EP 01113584A EP 01113584 A EP01113584 A EP 01113584A EP 1134815 A3 EP1134815 A3 EP 1134815A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- film
- effect device
- magnetoresistance effect
- producing
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000000694 effects Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005290 antiferromagnetic effect Effects 0.000 abstract 2
- 230000005294 ferromagnetic effect Effects 0.000 abstract 2
- 230000005291 magnetic effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
- 229910003145 α-Fe2O3 Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26321297 | 1997-09-29 | ||
JP26321297 | 1997-09-29 | ||
EP98118338A EP0905802B1 (de) | 1997-09-29 | 1998-09-28 | Magnetowiderstandseffektvorrichtung ,magnetoresistive Kopf und Verfahren zur Herstellung einer Magnetowiderstandseffektvorrichtung |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98118338A Division EP0905802B1 (de) | 1997-09-29 | 1998-09-28 | Magnetowiderstandseffektvorrichtung ,magnetoresistive Kopf und Verfahren zur Herstellung einer Magnetowiderstandseffektvorrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1134815A2 EP1134815A2 (de) | 2001-09-19 |
EP1134815A3 true EP1134815A3 (de) | 2001-10-31 |
Family
ID=17386347
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98118338A Expired - Lifetime EP0905802B1 (de) | 1997-09-29 | 1998-09-28 | Magnetowiderstandseffektvorrichtung ,magnetoresistive Kopf und Verfahren zur Herstellung einer Magnetowiderstandseffektvorrichtung |
EP01113584A Withdrawn EP1134815A3 (de) | 1997-09-29 | 1998-09-28 | Magnetowiderstandseffektvorrichtung und Herstellungsverfahren desselben |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98118338A Expired - Lifetime EP0905802B1 (de) | 1997-09-29 | 1998-09-28 | Magnetowiderstandseffektvorrichtung ,magnetoresistive Kopf und Verfahren zur Herstellung einer Magnetowiderstandseffektvorrichtung |
Country Status (5)
Country | Link |
---|---|
US (2) | US6597547B1 (de) |
EP (2) | EP0905802B1 (de) |
KR (1) | KR100302029B1 (de) |
CN (1) | CN1124594C (de) |
DE (1) | DE69827737D1 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001024170A1 (fr) * | 1999-09-29 | 2001-04-05 | Fujitsu Limited | Tete a effet de resistance magnetique et dispositif de reproduction d'informations |
JP2001110016A (ja) * | 1999-10-05 | 2001-04-20 | Alps Electric Co Ltd | スピンバルブ型薄膜磁気素子およびその製造方法、およびこのスピンバルブ型薄膜磁気素子を備えた薄膜磁気ヘッド |
US6280813B1 (en) * | 1999-10-08 | 2001-08-28 | International Business Machines Corporation | Magnetic recording media with antiferromagnetically coupled ferromagnetic films as the recording layer |
US6407890B1 (en) | 2000-02-08 | 2002-06-18 | International Business Machines Corporation | Dual spin valve sensor read head with a specular reflector film embedded in each antiparallel (AP) pinned layer next to a spacer layer |
JP2001308413A (ja) * | 2000-02-18 | 2001-11-02 | Sony Corp | 磁気抵抗効果薄膜、磁気抵抗効果素子及び磁気抵抗効果型磁気ヘッド |
TWI222630B (en) * | 2001-04-24 | 2004-10-21 | Matsushita Electric Ind Co Ltd | Magnetoresistive element and magnetoresistive memory device using the same |
US6791805B2 (en) * | 2001-05-03 | 2004-09-14 | Seagate Technology Llc | Current-perpendicular-to-plane spin valve reader with reduced scattering of majority spin electrons |
US6930864B2 (en) * | 2002-03-22 | 2005-08-16 | International Business Machines Corporation | Methods and apparatus for defining the track width of a magnetic head having a flat sensor profile |
JP2003283000A (ja) * | 2002-03-27 | 2003-10-03 | Toshiba Corp | 磁気抵抗効果素子およびこれを有する磁気メモリ |
KR100464318B1 (ko) * | 2002-10-01 | 2005-01-03 | 삼성전자주식회사 | 자기기록매체 |
WO2004051629A1 (ja) * | 2002-12-05 | 2004-06-17 | Matsushita Electric Industrial Co., Ltd. | 磁気ディスク装置及びその製造方法 |
US7495871B1 (en) * | 2005-07-26 | 2009-02-24 | Storage Technology Corporation | Top formed grating stabilizer |
JP4786331B2 (ja) | 2005-12-21 | 2011-10-05 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
JP4514721B2 (ja) | 2006-02-09 | 2010-07-28 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置 |
JP2007299880A (ja) | 2006-04-28 | 2007-11-15 | Toshiba Corp | 磁気抵抗効果素子,および磁気抵抗効果素子の製造方法 |
JP4550777B2 (ja) | 2006-07-07 | 2010-09-22 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ |
JP4388093B2 (ja) | 2007-03-27 | 2009-12-24 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置 |
US7978439B2 (en) * | 2007-06-19 | 2011-07-12 | Headway Technologies, Inc. | TMR or CPP structure with improved exchange properties |
US8094421B2 (en) * | 2007-12-26 | 2012-01-10 | Hitachi Global Storage Technologies Netherlands, B.V. | Current-perpendicular-to-plane (CPP) read sensor with multiple reference layers |
JP5039007B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP5039006B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP2010080839A (ja) | 2008-09-29 | 2010-04-08 | Toshiba Corp | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置 |
JP2012204432A (ja) * | 2011-03-24 | 2012-10-22 | Toshiba Corp | 磁気ランダムアクセスメモリ及びその製造方法 |
KR102127043B1 (ko) | 2018-04-17 | 2020-06-25 | 고려대학교 산학협력단 | 자기 소자 |
EP3588591A1 (de) * | 2018-06-25 | 2020-01-01 | Deutsches Elektronen-Synchrotron DESY | Mehrschichtige vorrichtung mit einer verbesserten antiferromagnetischen pinning-schicht und zugehöriges herstellungsverfahren dafür |
CN111740010B (zh) * | 2020-06-18 | 2022-11-15 | 电子科技大学 | 一种基于多层磁性复合结构的各向异性磁电阻 |
Citations (4)
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JPS5987616A (ja) * | 1982-11-09 | 1984-05-21 | Sharp Corp | 薄膜磁気ヘツド |
US5373238A (en) * | 1992-11-06 | 1994-12-13 | International Business Machines Corporation | Four layer magnetoresistance device and method for making a four layer magnetoresistance device |
EP0687917A2 (de) * | 1994-06-15 | 1995-12-20 | International Business Machines Corporation | Magnetoresistiver Spinventilfühler mit selbstverankerenden Laminierte Schicht und Benutzung der Fühler in einem magnetisches Aufzeichnungssystem |
JPH08279117A (ja) * | 1995-04-03 | 1996-10-22 | Alps Electric Co Ltd | 巨大磁気抵抗効果材料膜およびその製造方法とそれを用いた磁気ヘッド |
Family Cites Families (19)
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US5780176A (en) * | 1992-10-30 | 1998-07-14 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5465185A (en) | 1993-10-15 | 1995-11-07 | International Business Machines Corporation | Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor |
EP0677750A3 (de) | 1994-04-15 | 1996-04-24 | Hewlett Packard Co | Riesenmagnetoresistiver Sensor mit isolierender Pinning-Lage. |
JP2672802B2 (ja) | 1994-12-13 | 1997-11-05 | 株式会社東芝 | 交換結合膜および磁気抵抗効果素子 |
JP2748876B2 (ja) | 1995-01-27 | 1998-05-13 | 日本電気株式会社 | 磁気抵抗効果膜 |
JP2778626B2 (ja) * | 1995-06-02 | 1998-07-23 | 日本電気株式会社 | 磁気抵抗効果膜及びその製造方法並びに磁気抵抗効果素子 |
SG46731A1 (en) * | 1995-06-30 | 1998-02-20 | Ibm | Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer and magnetic recording system using the senor |
JPH0950612A (ja) | 1995-08-04 | 1997-02-18 | Hitachi Ltd | 磁気抵抗効果膜,磁気抵抗効果素子,磁気ヘッドおよび磁気記録再生装置 |
US5648885A (en) * | 1995-08-31 | 1997-07-15 | Hitachi, Ltd. | Giant magnetoresistive effect sensor, particularly having a multilayered magnetic thin film layer |
US5923504A (en) * | 1995-09-21 | 1999-07-13 | Tdk Corporation | Magnetoresistance device |
JP3321615B2 (ja) | 1995-09-21 | 2002-09-03 | ティーディーケイ株式会社 | 磁気抵抗効果素子および磁気変換素子 |
JPH0992904A (ja) | 1995-09-22 | 1997-04-04 | Alps Electric Co Ltd | 巨大磁気抵抗効果材料膜およびその製造方法とそれを用いた磁気ヘッド |
JPH09251618A (ja) | 1996-03-19 | 1997-09-22 | Fujitsu Ltd | 磁気センサ |
JP3327375B2 (ja) * | 1996-04-26 | 2002-09-24 | 富士通株式会社 | 磁気抵抗効果型トランスデューサ、その製造方法及び磁気記録装置 |
JP3137580B2 (ja) * | 1996-06-14 | 2001-02-26 | ティーディーケイ株式会社 | 磁性多層膜、磁気抵抗効果素子および磁気変換素子 |
US6535362B2 (en) * | 1996-11-28 | 2003-03-18 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive device having a highly smooth metal reflective layer |
JPH10188235A (ja) * | 1996-12-26 | 1998-07-21 | Nec Corp | 磁気抵抗効果膜及びその製造方法 |
US5828529A (en) * | 1997-04-29 | 1998-10-27 | International Business Machines Corporation | Antiparallel pinned spin valve with read signal symmetry |
US6061210A (en) * | 1997-09-22 | 2000-05-09 | International Business Machines Corporation | Antiparallel pinned spin valve with high magnetic stability |
-
1998
- 1998-09-28 US US09/162,300 patent/US6597547B1/en not_active Expired - Lifetime
- 1998-09-28 DE DE69827737T patent/DE69827737D1/de not_active Expired - Lifetime
- 1998-09-28 EP EP98118338A patent/EP0905802B1/de not_active Expired - Lifetime
- 1998-09-28 EP EP01113584A patent/EP1134815A3/de not_active Withdrawn
- 1998-09-29 CN CN98125636A patent/CN1124594C/zh not_active Expired - Fee Related
- 1998-09-29 KR KR1019980040439A patent/KR100302029B1/ko not_active IP Right Cessation
-
2003
- 2003-03-11 US US10/386,343 patent/US20030156360A1/en not_active Abandoned
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JPS5987616A (ja) * | 1982-11-09 | 1984-05-21 | Sharp Corp | 薄膜磁気ヘツド |
US5373238A (en) * | 1992-11-06 | 1994-12-13 | International Business Machines Corporation | Four layer magnetoresistance device and method for making a four layer magnetoresistance device |
EP0687917A2 (de) * | 1994-06-15 | 1995-12-20 | International Business Machines Corporation | Magnetoresistiver Spinventilfühler mit selbstverankerenden Laminierte Schicht und Benutzung der Fühler in einem magnetisches Aufzeichnungssystem |
JPH08279117A (ja) * | 1995-04-03 | 1996-10-22 | Alps Electric Co Ltd | 巨大磁気抵抗効果材料膜およびその製造方法とそれを用いた磁気ヘッド |
Non-Patent Citations (3)
Title |
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EGELHOFF W F ET AL: "OPTIMIZING THE GIANT MAGNETORESISTANCE OF SYMMETRIC AND BOTTOM SPINVALVES (INVITED)", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 79, no. 8, PART 2A, 15 April 1996 (1996-04-15), pages 5277 - 5281, XP000695748, ISSN: 0021-8979 * |
PATENT ABSTRACTS OF JAPAN vol. 008, no. 204 (P - 301) 18 September 1984 (1984-09-18) * |
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 02 28 February 1997 (1997-02-28) * |
Also Published As
Publication number | Publication date |
---|---|
EP0905802A3 (de) | 1999-05-06 |
CN1124594C (zh) | 2003-10-15 |
KR100302029B1 (ko) | 2001-11-05 |
US20030156360A1 (en) | 2003-08-21 |
EP0905802A2 (de) | 1999-03-31 |
EP1134815A2 (de) | 2001-09-19 |
CN1235338A (zh) | 1999-11-17 |
DE69827737D1 (de) | 2004-12-30 |
EP0905802B1 (de) | 2004-11-24 |
US6597547B1 (en) | 2003-07-22 |
KR19990030219A (ko) | 1999-04-26 |
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