Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
  • H01P1/00—Auxiliary devices
  • H01P1/24—Terminating devices
  • H01P1/26—Dissipative terminations

Definitions

• the present invention relates to the field of passive microwave components and more particularly to passive microwave components with resistive load intended for power dissipation comprising a resistive element suitable for 25 to 75 ohms and, most often, for the standard of 50 ohms.
• microwave-ribbons These components are used in different microwave systems (from 0.5 GHz) and are intended to protect installations by dissipating non-active energy from the system through a suitable medium in the event of a malfunction. They are most often connected to structures of microwave lines called "micro-ribbons”.
• Passive microwave components generally include a power dissipation support, on which are positioned a wiring range, a mass range and a resistive layer having a standard resistance between the wiring range and the mass range and also include elements of microwave adaptation.
• FR-A-2 096 858 which relates to a resistive load, but this load does not constitute a component intended for power dissipation and the adaptation is carried out by placing a resistive film on the side of the support.
• this technique of implementing the resistive load is very complex to master.
• the prior art also knows Japanese patent application JP-07 221 509 which relates to the adaptation of a component with elements external to it, but this component does not include simple internal adaptation and a fortiori d internal adaptation of multiple order.
• passive microwave components comprising a beryllium oxide dissipation support, so as to promote the heat exchange between the power absorbed by the resistive load and this support and heat distribution support on which the resistive load is etched.
• Beryllium oxide is one of the materials which presents the best compromise between a high thermal conductivity and a low dielectric constant.
• the present invention intends to remedy the drawbacks of the prior art by proposing a passive microwave component intended for power dissipation which comprises completely integrated capacitive and inductive microwave adaptation elements, located on the upper surface of the component, outside the layer. resistive, in order to achieve a multiple order adaptation, by multiplying the inductive elements in series and the capacitive elements in parallel.
• the present invention further proposes to use a support material which is not harmful, in this case aluminum oxide AL 2 O 3 or alumina.
• a support material which is not harmful, in this case aluminum oxide AL 2 O 3 or alumina.
• the depositor has developed a component image such that it makes it possible to obtain characteristics at least equal, sometimes even superior to the characteristics of the beryllium oxide supports, while keeping the same sizing.
• Alumina also has the advantage of being much less expensive to manufacture and much easier to implement.
• the present invention also proposes to use a support material made of aluminum nitride.
• An important advantage of the invention is that it makes it possible to produce a passive microwave component with an alumina support, unique, added, which is adapted in frequency for a power greater than 30 Watts and which can reach 60 to 80 Watts and even more.
• the component according to the invention makes it possible for example to obtain a TOS very close to 1 for a given frequency or for a frequency range which can be very large.
• the component allows for example to obtain a TOS less than 1.05 between
• the geometric dimension of the adaptation elements is adapted to the dimension and the power of the component.
• the multiple adaptation can be carried out by: one or more inductive pre-resistance elements situated in series between the wiring range and the resistive layer; and / or one or more pre-resistance capacitive elements located in parallel between the wiring area and the resistive layer; and / or - one or more post-resistance inductive elements located in series between the resistive layer and the mass range.
• FIGS. 3 and 4 illustrate a more complex version of the component according to the invention, seen respectively in perspective and in section along BB
• FIG. 5 illustrates the simplified equivalent diagram of the simple component of FIGS. 1 and 2
• FIG. 6 illustrates the simplified equivalent diagram of the complex component of FIGS. 3 and 4.
• FIG. 7 illustrates a diagram of the TOS obtained as a function of frequency, using a component according to the invention (curve B) compared to a conventional component (curve A),
• FIG. 8 illustrates the Smith diagram of the component of curve A
• the present invention relates to a passive microwave component with resistive load (1) intended for power dissipation, illustrated in FIGS. 1 and 2, comprising a support (2), a wiring range (3), a mass range (4 ) and a resistive layer (5) having a standard resistance between the wiring range (3) and the mass range (4).
• the component according to the invention is characterized in that it includes completely inductive and capacitive microwave adaptation elements integrated, external to the resistive layer (5) in order to carry out a multiple order adaptation, by multiplying the inductive elements in series and the capacitive elements in parallel.
• the component according to the invention is also characterized in that said microwave adaptation elements have geometric dimensions adapted to the dimension and the power of the component.
• Metallization is carried out on the underside (7) of the component (1). It constitutes the ground connection and is therefore called "ground plan”.
• the resistive layer (5) is deposited on the upper surface (8) of the component (1), in contact with the two metallic areas of wiring (3) and ground (4).
• the wiring range (3) constitutes the input connection of the resistive load and the mass range (4) allows the connection with the ground plane (7) via one or more holes (6) including the walls are metallized, opening on either side of the lower and upper surfaces.
• FIG. 5 shows a simplified equivalent diagram of the complete resistive load of FIGS. 1 and 2.
• the resistive layer (5) is modeled by the resistance R5 which is the main element of the load, supplemented by the capacitance C5 as well as the inductance L5 arranged between the resistive layer (5) and the ground plane (7).
• FIGS. 3 and 4 we find the same elements as in the simple version illustrated in FIGS. 1 and 2, but the metallized areas (3) and (4) are produced in a more complex pattern.
• Said microwave adaptation elements consist of: - one or more inductive pre-resistance elements (9) located in series between the wiring area (3) and the resistive layer (5), - one or more pre-resistance capacitive elements (10) located in parallel between the wiring area (3) and the resistive layer (5), the capacitive phenomenon being created between the wiring area (3) and the plane mass (7), and
• Said pre-resistance inductive element (9) can, for example, consist of a narrow line (12).
• Said pre-resistance capacitive element (10) can be, for example, constituted by a wide line (13), and / or by an insulating gap (15).
• Said post-resistance inductive elements (11) can, for example, consist of one or more holes (6) whose walls are metallized and / or of a narrow line (14).
• the component (1) illustrated by way of example in FIGS. 3 and 4 comprises a pre-resistance inductive element (9), a pre-resistance capacitive element (10) and two post-resistance inductive elements (11) constituted by holes ( 6) and a narrow line (14).
• the narrow line (12) forms an inductance in series L9
• the wide line (13) forms a capacitance in parallel C10
• the narrow line (14) constitutes a complementary inductance L11.
• FIG. 6 shows the role of elements C10, L9, L11 and L6 as compensators for elements C5 and L5 contained in the resistive layer (5) in addition to the main element R5.
• the above assembly constitutes, according to the state of the art, a fourth order adaptation circuit capable of compensating for the faults of the impedance measured at range (3) up to third order.
• the support (2) is made of aluminum oxide.
• the component according to the invention makes it possible to dissipate energies from 5 to 100 Watts, while keeping the same size as the beryllium oxide components.
• the operating frequencies can reach 1 to 5 GHz or more depending on the power to be dissipated.
• FIGS. 8 and 9 which illustrate the respective Smith diagrams of curves A and B clearly show that, in the case of a conventional component, the impedance is only capacitive whereas in the case of a component according to the invention, the impedance is alternately inductive then capacitive, then inductive.
• the support (2) is made of aluminum nitride.
• the component according to the invention thus produced makes it possible to achieve higher dissipated power performances (at specified frequency) or higher operating frequencies (at given dissipated power) than those of the beryllium oxide components.
• the mass return is preferably done by metallized edge.

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Cited By (1)

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• 1998
  • 1998-06-09 FR FR9807468A patent/FR2779577B1/fr not_active Expired - Fee Related
• 1999
  • 1999-06-09 EP EP99925061A patent/EP1086507B1/de not_active Expired - Lifetime
  • 1999-06-09 DE DE69910383T patent/DE69910383D1/de not_active Expired - Lifetime
  • 1999-06-09 AU AU41481/99A patent/AU4148199A/en not_active Abandoned
  • 1999-06-09 WO PCT/FR1999/001362 patent/WO1999065104A1/fr active IP Right Grant

Non-Patent Citations (1)

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