EP0936268A3 - Composition nettoyante pour materiaux électroniques et méthode pour utiliser - Google Patents

Composition nettoyante pour materiaux électroniques et méthode pour utiliser Download PDF

Info

Publication number
EP0936268A3
EP0936268A3 EP99300286A EP99300286A EP0936268A3 EP 0936268 A3 EP0936268 A3 EP 0936268A3 EP 99300286 A EP99300286 A EP 99300286A EP 99300286 A EP99300286 A EP 99300286A EP 0936268 A3 EP0936268 A3 EP 0936268A3
Authority
EP
European Patent Office
Prior art keywords
cleaning solution
electromaterials
hydrogen
water
gas dissolved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP99300286A
Other languages
German (de)
English (en)
Other versions
EP0936268A2 (fr
EP0936268B1 (fr
Inventor
Hiroshi Morita
Juinichi Ida
Tetsuo Mizuniwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kurita Water Industries Ltd
Original Assignee
Kurita Water Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP00622198A external-priority patent/JP3424731B2/ja
Priority claimed from JP02120198A external-priority patent/JP3397117B2/ja
Application filed by Kurita Water Industries Ltd filed Critical Kurita Water Industries Ltd
Publication of EP0936268A2 publication Critical patent/EP0936268A2/fr
Publication of EP0936268A3 publication Critical patent/EP0936268A3/fr
Application granted granted Critical
Publication of EP0936268B1 publication Critical patent/EP0936268B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
EP99300286A 1998-01-16 1999-01-15 Composition nettoyante pour materiaux électroniques et méthode pour utiliser Expired - Lifetime EP0936268B1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP00622198A JP3424731B2 (ja) 1998-01-16 1998-01-16 電子材料の洗浄方法
JP622198 1998-01-16
JP2120198 1998-02-02
JP02120198A JP3397117B2 (ja) 1998-02-02 1998-02-02 電子材料用洗浄水及び洗浄方法

Publications (3)

Publication Number Publication Date
EP0936268A2 EP0936268A2 (fr) 1999-08-18
EP0936268A3 true EP0936268A3 (fr) 1999-09-15
EP0936268B1 EP0936268B1 (fr) 2003-07-09

Family

ID=26340300

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99300286A Expired - Lifetime EP0936268B1 (fr) 1998-01-16 1999-01-15 Composition nettoyante pour materiaux électroniques et méthode pour utiliser

Country Status (5)

Country Link
US (1) US6346505B1 (fr)
EP (1) EP0936268B1 (fr)
KR (1) KR100437429B1 (fr)
DE (1) DE69909346T2 (fr)
TW (1) TWI239561B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372699B1 (en) * 1997-12-22 2002-04-16 Kurita Water Industries Ltd. Cleaning solution for electronic materials and method for using same
US6162302A (en) * 1999-11-16 2000-12-19 Agilent Technologies Method of cleaning quartz substrates using conductive solutions
US6692976B1 (en) * 2000-08-31 2004-02-17 Agilent Technologies, Inc. Post-etch cleaning treatment
JP4000247B2 (ja) * 2001-04-18 2007-10-31 株式会社ルネサステクノロジ フォトマスクの洗浄方法
JP4532776B2 (ja) * 2001-05-07 2010-08-25 パナソニック株式会社 基板洗浄方法及び電子デバイスの製造方法
JP4010819B2 (ja) * 2002-02-04 2007-11-21 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
CN1444259A (zh) * 2002-03-12 2003-09-24 株式会社东芝 半导体器件的制造方法
DE10259367A1 (de) * 2002-12-18 2004-07-08 Siemens Ag Verfahren zur Verbesserung der Wechselwirkung zwischen einem Medium und einem Bauteil
TW200411726A (en) * 2002-12-31 2004-07-01 Au Optronics Corp Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method
ZA200507191B (en) * 2003-04-17 2007-03-28 Unilever Plc Effervescent cleaning composition
US7402207B1 (en) 2004-05-05 2008-07-22 Advanced Micro Devices, Inc. Method and apparatus for controlling the thickness of a selective epitaxial growth layer
US7402485B1 (en) 2004-10-20 2008-07-22 Advanced Micro Devices, Inc. Method of forming a semiconductor device
US7456062B1 (en) 2004-10-20 2008-11-25 Advanced Micro Devices, Inc. Method of forming a semiconductor device
US7553732B1 (en) 2005-06-13 2009-06-30 Advanced Micro Devices, Inc. Integration scheme for constrained SEG growth on poly during raised S/D processing
US7479460B2 (en) * 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
KR101113628B1 (ko) * 2005-09-20 2012-02-17 고에키자이단호진 고쿠사이카가쿠 신고우자이단 반도체 장치의 제조 방법 및 반도체 제조 장치
US7572705B1 (en) 2005-09-21 2009-08-11 Advanced Micro Devices, Inc. Semiconductor device and method of manufacturing a semiconductor device
EP2077576A1 (fr) * 2008-01-04 2009-07-08 S.O.I.Tec Silicon on Insulator Technologies Procédé pour la préparation de substrats nettoyés appropriés pour une croissance épitaxiale
RU2495512C2 (ru) * 2011-11-23 2013-10-10 Валерий Михайлович Рыков Способ очистки поверхности полупроводниковых пластин
CN102515555B (zh) * 2011-11-30 2014-04-02 周燕平 一种石英坩埚表面处理方法
US9937535B2 (en) * 2013-03-14 2018-04-10 Ecolab Usa Inc. Method and system for operating a CIP pre-flush step using fluorometric measurements of soil content

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03228327A (ja) * 1990-02-02 1991-10-09 Nec Corp 半導体ウェーハの洗浄方法
JPH0669303A (ja) * 1992-08-13 1994-03-11 Mitsubishi Materials Corp シリコンウエーハ表面の酸化膜の膜厚測定方法とその装置
US5340437A (en) * 1993-10-08 1994-08-23 Memc Electronic Materials, Inc. Process and apparatus for etching semiconductor wafers
JPH0781902A (ja) * 1993-09-17 1995-03-28 Nec Corp 金属不純物除去方法およびその装置
JPH07312359A (ja) * 1994-03-25 1995-11-28 Fujitsu Ltd 半導体装置の洗浄方法及びその評価方法、処理装置、並びに水の溶存酸素量の制御方法
JPH0878376A (ja) * 1994-09-07 1996-03-22 Sumitomo Metal Ind Ltd 半導体用治工具の洗浄方法
JPH0964146A (ja) * 1995-08-29 1997-03-07 Tadahiro Omi 半導体製造システム及びクリーンルーム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03208900A (ja) * 1990-01-12 1991-09-12 Nippon Steel Corp シリコンウェハの洗浄方法
JP2743823B2 (ja) * 1994-03-25 1998-04-22 日本電気株式会社 半導体基板のウエット処理方法
KR970003576A (ko) * 1995-06-30 1997-01-28 김주용 웨이퍼 세정방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03228327A (ja) * 1990-02-02 1991-10-09 Nec Corp 半導体ウェーハの洗浄方法
JPH0669303A (ja) * 1992-08-13 1994-03-11 Mitsubishi Materials Corp シリコンウエーハ表面の酸化膜の膜厚測定方法とその装置
JPH0781902A (ja) * 1993-09-17 1995-03-28 Nec Corp 金属不純物除去方法およびその装置
US5340437A (en) * 1993-10-08 1994-08-23 Memc Electronic Materials, Inc. Process and apparatus for etching semiconductor wafers
JPH07312359A (ja) * 1994-03-25 1995-11-28 Fujitsu Ltd 半導体装置の洗浄方法及びその評価方法、処理装置、並びに水の溶存酸素量の制御方法
JPH0878376A (ja) * 1994-09-07 1996-03-22 Sumitomo Metal Ind Ltd 半導体用治工具の洗浄方法
JPH0964146A (ja) * 1995-08-29 1997-03-07 Tadahiro Omi 半導体製造システム及びクリーンルーム

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 9147, Derwent World Patents Index; Class L03, AN 91-342953, XP002108424 *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 311 (E - 1561) 14 June 1994 (1994-06-14) *
PATENT ABSTRACTS OF JAPAN vol. 095, no. 006 31 July 1995 (1995-07-31) *
PATENT ABSTRACTS OF JAPAN vol. 096, no. 003 29 March 1996 (1996-03-29) *
PATENT ABSTRACTS OF JAPAN vol. 096, no. 007 31 July 1996 (1996-07-31) *
PATENT ABSTRACTS OF JAPAN vol. 097, no. 007 31 July 1997 (1997-07-31) *

Also Published As

Publication number Publication date
KR100437429B1 (ko) 2004-06-25
US6346505B1 (en) 2002-02-12
DE69909346D1 (de) 2003-08-14
KR19990067948A (ko) 1999-08-25
EP0936268A2 (fr) 1999-08-18
TWI239561B (en) 2005-09-11
DE69909346T2 (de) 2004-04-15
EP0936268B1 (fr) 2003-07-09

Similar Documents

Publication Publication Date Title
EP0936268A3 (fr) Composition nettoyante pour materiaux électroniques et méthode pour utiliser
WO2001060750A3 (fr) Appareil et procede de distribution regulee d'un gaz
EP1008557A4 (fr) Procede et appareil d'electrolyse hydrothermale
AU2002255298A1 (en) Hydrogen-oxygen gas generator and method of generating hydrogen-oxygen gas using the generator
NO20012173L (no) Blodsepareringssystemer og fremgangsmater som anvender en flerfunksjons pumpestasjon for a utfore forskjellige on-line behandlingsoppgaver
AU2001245928A1 (en) Electrolyzer and method of using the same
AU2003230747A1 (en) Method and system for generating hydrogen
AU2002215230A1 (en) Internet commerce system and the method
EP1442028A4 (fr) Derives d'acides substitues en tant qu'agents de lutte contre le diabete et contre l'obesite, et procede associe
AU2001265112A1 (en) Method for coating using liquid carbon dioxide
WO1999019001A3 (fr) Procede et appareil permettant de produire et d'utiliser du dioxyde de chlore
DE50202924D1 (de) Korrosionsschutzverfahren für Metalloberflächen
EP0924970A3 (fr) Composition nettoyante pour matériaux électroniques et méthode d'utilisation
AU2001256357A1 (en) Method comprising the indirect electrochemical regeneration of nad(p)h
AU2002332224A1 (en) Arrangement and method for electrochemical purification or treatment
AU2001271356A1 (en) Catalytic alloy for the dissociation of water into hydrogen and oxygen and method of making
AU5883001A (en) Harm-removing agent and method for rendering halogen-containing gas harmless anduses thereof
AU2001288106A1 (en) Diamond electrode for measuring glucose concentration, and measuring method and apparatus employing the same
IT1284624B1 (it) Elettrodo a diffusione di gas e metodo elettrolitico che lo impiega.
IT1307053B1 (it) Unita' di assorbimento dell'anidride carbonica e metodo dirigenerazione di tale unita'.
AU2002226490A1 (en) Hydrogen generating system and hydrodehalogenation method
AU2001256868A1 (en) Device and method for electrochemically generating one or more gases
AU6499799A (en) Interactive voice dialog application platform and methods for using the same
AU4887701A (en) System, device and method for intermediating connection to the internet using voice domains, and generating a database used therefor
WO2003031691A3 (fr) Procede de recyclage du gaz utilise dans des processus electrochimiques

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

17P Request for examination filed

Effective date: 20000309

AKX Designation fees paid

Free format text: DE FR GB

17Q First examination report despatched

Effective date: 20001214

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Designated state(s): DE FR GB

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REF Corresponds to:

Ref document number: 69909346

Country of ref document: DE

Date of ref document: 20030814

Kind code of ref document: P

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20040414

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20120202

Year of fee payment: 14

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20120111

Year of fee payment: 14

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20120111

Year of fee payment: 14

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20130115

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20130930

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20130801

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 69909346

Country of ref document: DE

Effective date: 20130801

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20130115

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20130131