EP0897652A1 - Complexes organometalliques destines a etre utilises dans des dispositifs electroluminescents - Google Patents
Complexes organometalliques destines a etre utilises dans des dispositifs electroluminescentsInfo
- Publication number
- EP0897652A1 EP0897652A1 EP97930874A EP97930874A EP0897652A1 EP 0897652 A1 EP0897652 A1 EP 0897652A1 EP 97930874 A EP97930874 A EP 97930874A EP 97930874 A EP97930874 A EP 97930874A EP 0897652 A1 EP0897652 A1 EP 0897652A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- organic
- layer
- transporting layer
- electron transporting
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 125000002524 organometallic group Chemical group 0.000 title claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 92
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 30
- 238000005401 electroluminescence Methods 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000012044 organic layer Substances 0.000 claims 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 44
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 41
- 230000000052 comparative effect Effects 0.000 description 18
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 17
- 239000011777 magnesium Substances 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 11
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 229910052725 zinc Inorganic materials 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 238000010030 laminating Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 150000003751 zinc Chemical class 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 239000012153 distilled water Substances 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- IAZDPXIOMUYVGZ-WFGJKAKNSA-N Dimethyl sulfoxide Chemical compound [2H]C([2H])([2H])S(=O)C([2H])([2H])[2H] IAZDPXIOMUYVGZ-WFGJKAKNSA-N 0.000 description 4
- LWBPNIJBHRISSS-UHFFFAOYSA-L beryllium dichloride Chemical compound Cl[Be]Cl LWBPNIJBHRISSS-UHFFFAOYSA-L 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010406 cathode material Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 229960003540 oxyquinoline Drugs 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000003828 vacuum filtration Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 229910001627 beryllium chloride Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- DIMYTQPLZWDZFE-UHFFFAOYSA-L beryllium sulfate tetrahydrate Chemical compound [Be+2].O.O.O.O.[O-]S([O-])(=O)=O DIMYTQPLZWDZFE-UHFFFAOYSA-L 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001938 differential scanning calorimetry curve Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D277/00—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings
- C07D277/60—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings condensed with carbocyclic rings or ring systems
- C07D277/62—Benzothiazoles
- C07D277/64—Benzothiazoles with only hydrocarbon or substituted hydrocarbon radicals attached in position 2
- C07D277/66—Benzothiazoles with only hydrocarbon or substituted hydrocarbon radicals attached in position 2 with aromatic rings or ring systems directly attached in position 2
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
Definitions
- the present invention relates to an electron injecting material for use in organic electroluminescence devices. More particularly, the present invention relates to an electron injecting material, being capable of driving with a lower drive voltage and having an improved efficiency in power conversion, for use in an organic electroluminescent device.
- the organic electroluminescent device in accordance with the present invention comprises an anode electrode, a cathode electrode, and an organic film layer formed between the anode and cathode electrodes, wherein the organic film layer is made of a 2-(0-hydroxyphenyl)benzthiazole beryllium complex.
- EL device organic electroluminescence device
- the organic dye molecules should have the capability of accepting carriers from the electrodes and the high mobility of the carriers inside the electroluminescent layer.
- the recombination zone of the carriers should be located away from the electrodes to prevent occurrences of exciton quenching by the metallic electrodes.
- U.S. Patent No. 4,539,507 granted to Steven A. VanSlyke et al., issued on Sep. 3, 1985 teaches a device having two layers which comprises in the order of anode/hole transporting layer/electron transporting layer/cathode.
- a triphenylamine-containing compound and an aluminum complex of 8-hydroxyquinoline are used as the hole transporting material and the electron transporting material respectively, wherein the latter also functions as an emitting layer of the device. Facile injection of carriers and high mobility of holes and electrons in the two-layer EL device makes the driving voltage to be lowered.
- the power conversion efficiency of the organic EL device has improved up to 1.5 lm/W and hundreds of cd/m in brightness thereof has been obtained at a voltage of less than 10 V.
- U.S. Patent No. 4,539,507 also teaches an organic EL device having an improved durability and a higher efficiency than the two-layer device, being fabricated by interposing a hole injecting layer containing a metal phthalocyanine between an anode and a hole transporting layer. Enhancing the carrier injection is therefore considered one of the important factors for the improvement of EL devices.
- the adhesive layer is composed of a metal complex of 8-hydroxyquinoline or a derivative thereof which is contaminated by adding a small amount of additional compounds to prevent it from crystallization. Therefore the morphologically stabilized adhesive layer provides the device with a uniform light emission and durability thereof.
- the energy level of the lowest unoccupied molecular orbital (hereinafter referred to as "LUMO") of the metal complex of 8-hydroxyquinoline is located below that of another emissive molecules which are in contact with the adhesive layer in a device comprising in the order of anode/hole injecting layer/hole transporting layer/emitting layer/adhesive layer/cathode to ensure the facile electron injection from the cathode.
- LUMO lowest unoccupied molecular orbital
- the objective of the present invention is to provide an electron injecting material having a low drive voltage and an improved power conversion efficiency for organic electroluminescene (EL) devices.
- EL organic electroluminescene
- Ri to Rs represent hydrogen or Ci to C 8 alkyl groups, independently.
- a zinc derivative of compound (1), 2-(O-hydroxyphenyl)benzthiazole zinc complex, has been known as a blue light emitting electron transporting material (see European. Pat. Publication No. 0652273 and Japanese Patent Application Laid-Open No. 113576/1996).
- the present inventors discovered that the compounds represented by the above general formula (1) show excellent electron injection and transport properties which have not been found in the aforementioned patents.
- FIGS. 1 to 3 are schematic diagrams of organic EL devices where the present invention can be used.
- FIG. 4 is a graph showing a relationship of light intensity (arbitrary unit) vs. voltage respectively in Example 1, Comparative Example 1.1 and Comparative Example 1.2.
- FIG. 5 is a graph showing a relationship of light intensity (arbitrary unit) vs. voltage respectively in Example 2 and Comparative Example 2.
- the use of stable cathode having a low work function is a critical factor to commercialize an efficient EL device. Since the LUMO level of the conventional electron injecting layer (a layer being located in contact with a cathode) does not match with the work function of the cathode material, a significant high energy barrier exists when injecting electrons from the cathode into the organic medium. For example, an energy barrier of about 0.6 eV exists when injecting electrons from a Mg:Ag alloy into 8-hydroxyqunoline aluminum salt (hereinafter referred to as Alq3) which is one of the most widely used electron injecting layers in an EL device.
- Alq3 8-hydroxyqunoline aluminum salt
- the present invention is based on a discovery that a complex represented by the above formula (1) can provide an EL device with both a high power efficiency and a low driving- voltage when it is interposed as a thin layer between a cathode electrode and the hole-transporting layer of a conventional EL device.
- FIGS. 1 to 3 show a respective schematic cross section of internal junction organic EL devices. These devices generally comprise a transparent support layer 1 onto which an anode electrode 2 having a high work function is coated. Specific examples of a conductive material for the anode electrode 2 may include Au, Indium Tin Oxide (ITO), Sn0 2 , conducting polymers and ZnO 2 .
- ITO Indium Tin Oxide
- Sn0 2 conducting polymers
- ZnO 2 ZnO 2
- a cathode electrode 7 is formed by way of a method of vapor deposition or sputtering of electrically conductive material with a low work function.
- the cathode electrode 7 may be made of a material selected from the group of aluminum, silver, magnesium, lithium, samarium, indium, tin, lead, yttrium, ruthenium and alloys of these (see U.S. Pat. No. 4,885,211; U.S. Pat. No. 4,539,507; U.S. Pat. No. 5,059,862; U.S. Pat. No. 5,429,844; and U.S. Pat. No. 5,500,568), but not limited thereto.
- a hole transporting layer 3 is made of a material, which is capable of accepting holes from the anode electrode 2 and transporting them with high mobility, preferably a derivative of aryl amine or a mixture of at least two aryl amines with different molecular structure to suppress possible crystallization and to improve the performance of EL devices. Also the hole transporting layer 3 can be divided into multiple sub-layers each of which is made of different hole transporting material.
- An electron transporting layer 4 is made of a material, which is capable of accepting electrons from the cathode electrode 7 and transporting them. As shown in FIG. 1, the electron transporting layer 4 is located between the cathode electrode 7 and the hole transporting layer 3.
- FIGS. 2 and 3 are a respective schematic cross section of organic EL devices having a hole injecting layer 5 sandwiched between an anode electrode 2 and a hole transporting layer 3 to enhance the injection of holes from the anode electrode 2 into the hole transporting layer 3 and to improve the lifetime of the organic EL devices as well.
- the hole injecting layer 5 is made of a material having ability of forming a stable interface with both the anode electrode 2 and the hole transporting layer 3. Also it is preferable that the hole injecting material has an energy level of the highest occupied molecular orbital (HOMO) in between the work function of the anode and the HOMO level of the hole transporting material (see U.S. Pat. No. 4,539,507 and U.S. Pat. No. 4,769,292).
- HOMO highest occupied molecular orbital
- the electron transporting layer 4 is made of a material capable of accepting electrons from the cathode electrode 7, upon application of an appropriate forward bias, and transporting them and is located between the cathode electrode 7 and the hole transporting layer 3.
- the recombination of carriers generally takes place, but not necessarily, in the electron transporting layer 4, and it is preferable to select the electron transporting material among molecules having a high fluorescent quantum efficiency.
- highly fluorescent materials may be doped into the electron transporting layer 4 with a low concentration.
- the band gap of the dopant material there are two important requirements such as the band gap of the dopant material and the location of it in the electron transporting layer 4 in the direction of thickness. If the band gap of the dopant material is larger than that of electron transporting material 4, effective energy transfer cannot be obtained. Therefore it is preferable to select a dopant material with a band gap similar to or lower than that of the electron transporting material.
- Another requirement, i.e., the location of the doped region, should be fulfilled to maximize the power conversion efficiency of organic EL devices. If the LUMO level of the dopant is lower than that of the electron transporting layer 4, the dopant acts as a shallow trap of electrons. Since the shallow trap increases a space charge density, a higher voltage is required to drive the EL devices. Therefore it is preferable to locate the doped region in the direction of thickness where the exiton formation takes place.
- FIG. 3 schematically illustrates an organic EL device fabricated by interposing a light emitting layer 6 between the electron transporting layer 4 and the hole transporting layer 3 based on an organic EL device as shown in FIG. 2 (see U.S. Pat. No. 4,539,507).
- this device according to the inventors of above U.S. patent, it is desirable that the thickness of the electron transporting layer 4 is smaller than that of the light emitting layer 6 to minimize the possibility of light emission from the electron transporting layer 4 which has a band gap (energy gap) smaller than that of the light emitting layer 6.
- the present invention relates to an organic EL device having a low drive voltage and an improved power conversion efficiency. Electron injecting materials of the present invention are represented by the following formula (1):
- Ri to Rs represent hydrogen or C ⁇ to C 8 alkyl groups, independently.
- Specific examples of the electron injecting materials of the present invention are represented by the following formula (2) and (3):
- the energy gap of compound (2) obtained from the wavelength of absorption ends of abso ⁇ tion spectrum ranging from UV light to visible light of a thin film corresponds to 2.82 eV.
- the emission color is found to be blue (CIE 0.138, 0.149). Therefore the compound (2) is an excellent candidate material for the electron transporting layer 4 and the light emitting layer 6 for emitting blue color.
- this material expands the possible choice of the dopant material having a band gap energy corresponding to a color range from blue to red compared with that from green to red when Alq3 is used as an electron transporting/host molecule which has a band gap energy corresponding to green color.
- the compound (2) should meet other requirements such as thermal stability, electrochemical stability, electron accepting ability (low LUMO energy level) and so on. According to a DSC thermogram, compound (2) melts at the onset temperature of 325 °C which is high enough for practical use.
- TABLE 1 The physical properties described above of the compound (2) are summarized in TABLE 1.
- the yielded product was further purified by train sublimation.
- the results of analyzing the product are given as follows: m.p.: 325 °C (onset).
- compound (2) as an electron injecting material was measured using cyclic voltammeter by comparing its reduction potential with known electron transporting materials.
- the reference compounds used in this set of experiments is Alq3.
- organic EL devices were fabricated with and without compound (2) as follows.
- Commercially available ITO coated glass was subjected to ultrasonic cleaning with methanol, acetone, isopropyl alcohol, acetone and methanol in success for 5 minutes in each solvent, and dried in a vacuum oven for 1 hour at 110 ° C.
- the cleaned substrate was fixed on a substrate holder in a thermal vacuum deposition chamber.
- An organic EL device which comprises laminating layers in the order of ITO/TPD/Alq3/compound (2)/Mg:Ag (10:l)/Ag with a film thickness of 60 nm (TPD), 50 nm (Alq3), 20 nm (compound (2)), 100 nm (Mg:Ag) and 150 nm (Ag) respectively (TPD: N, N-diphenyl-N, N-bis(3-methylphenyl)-[l, l-biphenyl]-4, 4-diamine).
- the deposition rate was maintained in a range of 1 ⁇ 3 A/sec in a high vacuum of about 10 "6 torr with a substrate temperature set at room temperature.
- a shadow mask was used for the patterning of the cathode electrode to make 0.15 cm of active device area.
- the schematic cross section of this organic EL device is analogous to the device described in FIG. 1 except that the former has an additional layer made of compound (2) inbetween the electron transporting layer 4 and the cathode electrode 7.
- An organic EL device which comprises laminating layers in the order of ITO/TPD/Alq3/Mg:Ag(10:l)/Ag was obtained in the same manner as in EXAMPLE 1 except that the electron injecting material (2) was excluded.
- the schematic cross section of this organic EL device is described in FIG. 1.
- the power conversion efficiency of this device was 1.2 lm/W at the brightness of 100 cd/m . 1 mA/cm 2 of current density was injected at 9.1 V. The results are summarized in TABLE 3.
- An organic EL device which comprises laminating layers in the order of ITO/TPD/Alq3/2-(0-hydroxyphenyl)benzthiazole zinc complex/Mg:Ag(10:l)/Ag was obtained in the same manner as in EXAMPLE 1 except that the electron injecting material (2) was replaced with the zinc complex of material (2) with the same thickness as the compound (1).
- the schematic cross section of this organic EL device is analogous to a device described in FIG. 1 except that the former has an additional layer made of 2-(O-hydroxyphenyl)benzthiazole zinc complex inbetween the electron transporting layer 4 and the cathode electrode 7.
- the power conversion efficiency of this device was 1.6 lm/W at the brightness of 100 cd/m 2 . 1 mA/cm 2 of current density was injected at 8.4 V. The results are summarized in TABLE 3.
- An organic EL device which comprises laminating layers in the order of ITO/TPD/Alq3/compound (2)/Ag was obtained in the same manner as in EXAMPLE 1 with a film thickness of 60 nm (TPD), 20 nm (Alq3), 50 nm (compound (2)), and 200 nm (Ag) respectively.
- TPD 60 nm
- Alq3 20 nm
- compound (2) 50 nm
- Ag electron injecting/transporting material
- low work function magnesium silver (Mg:Ag) alloy was replaced with the high work function silver (Ag) electrode.
- the schematic cross section of this organic EL device is analogous to a device depicted in FIG.
- An organic EL device which comprises laminating layers in the order of ITO/TPD/Alq3/2-(0-hydroxyphenyl)benzthiazole zinc complex/Ag was obtained in the same manner as in EXAMPLE 1 with a film thickness of 60 nm (TPD), 20 nm (Alq3), 50 nm (2-(0-hydroxyphenyl)benzthiazole zinc complex), and 200 nm (Ag) respectively.
- TPD 60 nm
- Alq3 20 nm
- 200 nm (Ag) respectively.
- Alq3 was used as light emitting material
- the 2-(0-hydroxyphenyl)benzthiazole zinc complex as an electron injecting/transporting material.
- a low work function magnesium silver alloy was replaced with a high work function silver electrode.
- FIG. 5 which depicts a graph of plotted light intensities (arbitrary unit) at various voltages from devices used for EXAMPLE 2 and Comparative Example 2 clearly illustrates the performance of compound (2) superior to its zinc analogue. At the same voltage, the device in EXAMPLE 2 gives off much higher light intensity compared with that in Comparative Example 2.
- An organic EL device which comprises laminating layers in the order of ITO/TPD/compound (2): coumarine 540(100:l)/Mg:Ag/Ag was obtained in the same manner as in EXAMPLE 1 with a film thickness of 60 nm (TPD), 50 nm (compound (2): coumarine 540), 100 nm (Mg:Ag) and 150 nm (Ag) respectively.
- coumarine 540 was used as a dopant molecule and compound (2) as a host molecule with the role of electron injecting and transporting at the same time.
- the chemical structure of coumarine 540 is illustrated below and the schematic cross section of this organic EL device is illustrated in FIG. 1.
- An organic EL device which comprises laminating layers in the order of ITO/TPD/Alq3:coumarine 540(100:l)/Mg:Ag/Ag was obtained in the same manner as in EXAMPLE 3 with a film thickness of 60 nm (TPD), 50 nm (compound (2): coumarine 540), 100 nm (Mg:Ag) and 150 nm (Ag) respectively.
- coumarine 540 was used as a dopant molecule and Alq3 as a host molecule with the role of electron injecting and transporting at the same time.
- the schematic cross section of this organic EL device is illustrated in FIG. 1. The results are summarized in TABLE 5.
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- Electroluminescent Light Sources (AREA)
Abstract
Matière à injection d'électrons, capable d'excitation à l'aide d'une tension d'excitation plus faible et présentant une meilleure efficacité de conversion de puissance, destinée à être utilisée dans un dispositif électroluminescent organique. Pour répondre aux caractéristiques techniques de la présente invention, ledit dispositif comprend une électrode anode, une électrode cathode et un film organique placé entre les électrodes, ledit film organique étant constitué d'un complexe organométallique de formule (1) dans laquelle R1 à R8 sont indépendamment hydrogène ou des groupes alkyle C1 à C8.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR19970005406 | 1997-02-22 | ||
KR1997540 | 1997-02-22 | ||
PCT/KR1997/000134 WO1998037736A1 (fr) | 1997-02-22 | 1997-07-08 | Complexes organometalliques destines a etre utilises dans des dispositifs electroluminescents |
Publications (1)
Publication Number | Publication Date |
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EP0897652A1 true EP0897652A1 (fr) | 1999-02-24 |
Family
ID=19497678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP97930874A Withdrawn EP0897652A1 (fr) | 1997-02-22 | 1997-07-08 | Complexes organometalliques destines a etre utilises dans des dispositifs electroluminescents |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0897652A1 (fr) |
JP (1) | JP2000515926A (fr) |
KR (1) | KR100259398B1 (fr) |
TW (1) | TW373211B (fr) |
WO (1) | WO1998037736A1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6558817B1 (en) * | 1998-09-09 | 2003-05-06 | Minolta Co., Ltd. | Organic electroluminescent element |
KR100373203B1 (ko) * | 1999-03-31 | 2003-02-25 | 주식회사 엘지화학 | 새로운 큐마린계 착물 및 이를 이용한 유기 발광 소자 |
AU2003230308A1 (en) | 2002-05-07 | 2003-11-11 | Lg Chem, Ltd. | New organic compounds for electroluminescence and organic electroluminescent devices using the same |
TWI468490B (zh) | 2007-07-24 | 2015-01-11 | Gracel Display Inc | 新穎紅色電場發光化合物及使用該化合物之有機電場發光裝置 |
KR100970713B1 (ko) * | 2007-12-31 | 2010-07-16 | 다우어드밴스드디스플레이머티리얼 유한회사 | 유기발광화합물을 발광재료로서 채용하고 있는 전기 발광소자 |
KR101294620B1 (ko) * | 2010-06-07 | 2013-08-07 | 롬엔드하스전자재료코리아유한회사 | 유기발광화합물을 발광재료로서 채용하고 있는 전기 발광 소자 |
JP6115395B2 (ja) * | 2013-08-14 | 2017-04-19 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス素子用金属錯体、並びに表示装置及び照明装置 |
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US5529853A (en) * | 1993-03-17 | 1996-06-25 | Sanyo Electric Co., Ltd. | Organic electroluminescent element |
JPH07133483A (ja) * | 1993-11-09 | 1995-05-23 | Shinko Electric Ind Co Ltd | El素子用有機発光材料及びel素子 |
US5486406A (en) * | 1994-11-07 | 1996-01-23 | Motorola | Green-emitting organometallic complexes for use in light emitting devices |
-
1997
- 1997-07-08 JP JP10536500A patent/JP2000515926A/ja not_active Ceased
- 1997-07-08 WO PCT/KR1997/000134 patent/WO1998037736A1/fr not_active Application Discontinuation
- 1997-07-08 EP EP97930874A patent/EP0897652A1/fr not_active Withdrawn
- 1997-07-30 TW TW086111076A patent/TW373211B/zh not_active IP Right Cessation
-
1998
- 1998-02-18 KR KR1019980004989A patent/KR100259398B1/ko not_active IP Right Cessation
Non-Patent Citations (1)
Title |
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See references of WO9837736A1 * |
Also Published As
Publication number | Publication date |
---|---|
TW373211B (en) | 1999-11-01 |
WO1998037736A1 (fr) | 1998-08-27 |
JP2000515926A (ja) | 2000-11-28 |
KR19980071472A (ko) | 1998-10-26 |
KR100259398B1 (ko) | 2000-06-15 |
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