EP0888641A1 - Klima- und korrosionsstabiler schichtaufbau - Google Patents
Klima- und korrosionsstabiler schichtaufbauInfo
- Publication number
- EP0888641A1 EP0888641A1 EP97908285A EP97908285A EP0888641A1 EP 0888641 A1 EP0888641 A1 EP 0888641A1 EP 97908285 A EP97908285 A EP 97908285A EP 97908285 A EP97908285 A EP 97908285A EP 0888641 A1 EP0888641 A1 EP 0888641A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- barrier
- barrier layer
- corrosion
- climate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000007797 corrosion Effects 0.000 title claims abstract description 23
- 238000005260 corrosion Methods 0.000 title claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 70
- 238000002161 passivation Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052719 titanium Inorganic materials 0.000 abstract description 5
- 239000010936 titanium Substances 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- -1 silicon oxide nitride Chemical class 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 193
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 239000011521 glass Substances 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 8
- 239000006096 absorbing agent Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004831 Hot glue Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Claims
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19611410 | 1996-03-22 | ||
DE19611410A DE19611410C1 (de) | 1996-03-22 | 1996-03-22 | Klimastabile elektrische Dünnschichtanordnung |
DE19707280 | 1997-02-24 | ||
DE19707280A DE19707280A1 (de) | 1997-02-24 | 1997-02-24 | Klima- und korrosionsstabiler Schichtaufbau |
PCT/EP1997/001451 WO1997036334A1 (de) | 1996-03-22 | 1997-03-21 | Klima- und korrosionsstabiler schichtaufbau |
Publications (1)
Publication Number | Publication Date |
---|---|
EP0888641A1 true EP0888641A1 (de) | 1999-01-07 |
Family
ID=26024048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP97908285A Withdrawn EP0888641A1 (de) | 1996-03-22 | 1997-03-21 | Klima- und korrosionsstabiler schichtaufbau |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0888641A1 (de) |
JP (1) | JP2000507393A (de) |
CN (1) | CN1218577A (de) |
WO (1) | WO1997036334A1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0969521A1 (de) * | 1998-07-03 | 2000-01-05 | ISOVOLTAÖsterreichische IsolierstoffwerkeAktiengesellschaft | Fotovoltaischer Modul sowie ein Verfahren zu dessen Herstellung |
JP2002100469A (ja) | 2000-09-25 | 2002-04-05 | Pioneer Electronic Corp | 有機エレクトロルミネッセンス表示パネル |
CN100344019C (zh) | 2004-06-16 | 2007-10-17 | 松下电器产业株式会社 | 活性物质材料、其制造方法及含该材料的非水电解质二次电池 |
EP1964180B1 (de) | 2005-12-21 | 2010-08-04 | Saint-Gobain Glass France S.A. | Prozess zum herstellen eines photovoltaischen dünnfilmbauelements |
JP5219538B2 (ja) | 2008-02-12 | 2013-06-26 | 大成建設株式会社 | 太陽光発電薄膜を基材に直接形成した太陽電池 |
FR2939240B1 (fr) | 2008-12-03 | 2011-02-18 | Saint Gobain | Element en couches et dispositif photovoltaique comprenant un tel element |
JP5334645B2 (ja) * | 2009-03-31 | 2013-11-06 | 富士フイルム株式会社 | 可撓性太陽電池モジュール |
EP2534693A2 (de) * | 2010-02-09 | 2012-12-19 | Dow Global Technologies LLC | Feuchtigkeitsbeständige pv-module mit verbesserter sperrschichthaftung |
JP5602700B2 (ja) * | 2010-11-02 | 2014-10-08 | 富士フイルム株式会社 | 光電変換素子およびその製造方法 |
CN110344034A (zh) * | 2019-07-30 | 2019-10-18 | 暨南大学 | 一种塑料表面纯镍涂层的纳米反应喷雾沉积方法 |
CN114874731B (zh) * | 2022-05-11 | 2023-09-22 | 长春工业大学 | 一种钙钛矿光伏封装材料、器件及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3996067A (en) * | 1975-12-30 | 1976-12-07 | The United States Of America As Represented By The National Aeronautics And Space Administration | Silicon nitride coated, plastic covered solar cell |
DE3027256A1 (de) * | 1980-07-18 | 1982-02-18 | Robert Bosch Gmbh, 7000 Stuttgart | Mehrschichtsystem fuer waermeschutzanwendungen und verfahren zu seiner herstellung |
US4780372A (en) * | 1984-07-20 | 1988-10-25 | The United States Of America As Represented By The United States Department Of Energy | Silicon nitride protective coatings for silvered glass mirrors |
JPS61128576A (ja) * | 1984-11-27 | 1986-06-16 | Inax Corp | 窯業製基盤を有した太陽電池及び該太陽電池の製造方法 |
DE3725338A1 (de) * | 1987-07-30 | 1989-02-09 | Nukem Gmbh | Verkapselung von einem photovoltaischem element |
JPH0435070A (ja) * | 1990-05-31 | 1992-02-05 | Taiyo Yuden Co Ltd | 透光性配線基板 |
-
1997
- 1997-03-21 WO PCT/EP1997/001451 patent/WO1997036334A1/de not_active Application Discontinuation
- 1997-03-21 EP EP97908285A patent/EP0888641A1/de not_active Withdrawn
- 1997-03-21 JP JP9534021A patent/JP2000507393A/ja active Pending
- 1997-03-21 CN CN97194657A patent/CN1218577A/zh active Pending
Non-Patent Citations (1)
Title |
---|
See references of WO9736334A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN1218577A (zh) | 1999-06-02 |
JP2000507393A (ja) | 2000-06-13 |
WO1997036334A1 (de) | 1997-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 19980928 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SIEMENS UND SHELL SOLAR GMBH Owner name: SIEMENS AKTIENGESELLSCHAFT |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SIEMENS UND SHELL SOLAR GMBH |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SHELL SOLAR GMBH |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20031002 |