EP0849775A3 - Anlage und Verfahren zur Abscheidung aus der Dampfphase - Google Patents

Anlage und Verfahren zur Abscheidung aus der Dampfphase Download PDF

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Publication number
EP0849775A3
EP0849775A3 EP97122152A EP97122152A EP0849775A3 EP 0849775 A3 EP0849775 A3 EP 0849775A3 EP 97122152 A EP97122152 A EP 97122152A EP 97122152 A EP97122152 A EP 97122152A EP 0849775 A3 EP0849775 A3 EP 0849775A3
Authority
EP
European Patent Office
Prior art keywords
vapor deposition
rotator
wafer substrate
wafer
feed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97122152A
Other languages
English (en)
French (fr)
Other versions
EP0849775A2 (de
Inventor
Tadashi Ohashi
Katuhiro Chaki
Ping Xin
Tatsuo Fujii
Katsuyuki Iwata
Shinichi Mitani
Takaaki Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Publication of EP0849775A2 publication Critical patent/EP0849775A2/de
Publication of EP0849775A3 publication Critical patent/EP0849775A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
EP97122152A 1996-12-19 1997-12-16 Anlage und Verfahren zur Abscheidung aus der Dampfphase Withdrawn EP0849775A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP354382/96 1996-12-19
JP8354382A JPH10177961A (ja) 1996-12-19 1996-12-19 気相成長装置及び気相成長方法

Publications (2)

Publication Number Publication Date
EP0849775A2 EP0849775A2 (de) 1998-06-24
EP0849775A3 true EP0849775A3 (de) 1999-04-28

Family

ID=18437188

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97122152A Withdrawn EP0849775A3 (de) 1996-12-19 1997-12-16 Anlage und Verfahren zur Abscheidung aus der Dampfphase

Country Status (5)

Country Link
US (1) US6132519A (de)
EP (1) EP0849775A3 (de)
JP (1) JPH10177961A (de)
KR (1) KR100490013B1 (de)
TW (1) TW432492B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10177961A (ja) * 1996-12-19 1998-06-30 Toshiba Ceramics Co Ltd 気相成長装置及び気相成長方法
JPH1167675A (ja) * 1997-08-21 1999-03-09 Toshiba Ceramics Co Ltd 高速回転気相薄膜形成装置及びそれを用いる高速回転気相薄膜形成方法
WO2007072863A1 (ja) * 2005-12-20 2007-06-28 Sintokogio, Ltd. 投射機による投射条件情報の推定方法及びその装置
JP2009021533A (ja) * 2007-06-15 2009-01-29 Nuflare Technology Inc 気相成長装置及び気相成長方法
JP2011171450A (ja) * 2010-02-17 2011-09-01 Nuflare Technology Inc 成膜装置および成膜方法
US9196471B1 (en) 2012-06-01 2015-11-24 Yen Fui Choo Scanner for wafers, method for using the scanner, and components of the scanner

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972718A (ja) * 1982-10-20 1984-04-24 Toshiba Corp 縦型気相成長装置
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
JPH0590167A (ja) * 1991-09-30 1993-04-09 Toshiba Corp 気相成長方法
JPH0750260A (ja) * 1991-04-23 1995-02-21 Toshiba Corp 気相成長装置
JPH08291385A (ja) * 1995-04-20 1996-11-05 Tokyo Electron Ltd 処理装置のシャワーヘッド構造及び処理ガスの供給方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2043966A (en) * 1934-04-21 1936-06-09 Kathon Ltd Apparatus for depositing metal by electrode dispersion
JPH06140335A (ja) * 1992-10-23 1994-05-20 Fujitsu Ltd 成膜装置
JPH06283449A (ja) * 1993-03-24 1994-10-07 Tokyo Electron Ltd 真空排気方法及び真空装置
JPH07201756A (ja) * 1993-12-28 1995-08-04 Tokyo Electron Ltd 熱処理装置
JPH0745524A (ja) * 1993-07-28 1995-02-14 Hitachi Ltd 半導体製造装置
JPH07111259A (ja) * 1993-10-09 1995-04-25 Tokyo Electron Ltd プラズマ処理装置
JP3077516B2 (ja) * 1994-07-15 2000-08-14 住友金属工業株式会社 プラズマ処理装置
JPH10177961A (ja) * 1996-12-19 1998-06-30 Toshiba Ceramics Co Ltd 気相成長装置及び気相成長方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972718A (ja) * 1982-10-20 1984-04-24 Toshiba Corp 縦型気相成長装置
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
JPH0750260A (ja) * 1991-04-23 1995-02-21 Toshiba Corp 気相成長装置
JPH0590167A (ja) * 1991-09-30 1993-04-09 Toshiba Corp 気相成長方法
JPH08291385A (ja) * 1995-04-20 1996-11-05 Tokyo Electron Ltd 処理装置のシャワーヘッド構造及び処理ガスの供給方法
US5595606A (en) * 1995-04-20 1997-01-21 Tokyo Electron Limited Shower head and film forming apparatus using the same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
GADGIL P N: "OPTIMIZATION OF A STAGNATION POINT FLOW REACTOR DESIGN FOR METALORGANIC CHEMICAL VAPOR DEPOSITION BY FLOW VISUALIZATION", JOURNAL OF CRYSTAL GROWTH, vol. 134, no. 3/04, 1 December 1993 (1993-12-01), pages 302 - 312, XP000415696 *
PATENT ABSTRACTS OF JAPAN vol. 008, no. 181 (E - 261) 21 August 1984 (1984-08-21) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 431 (E - 1411) 10 August 1993 (1993-08-10) *
PATENT ABSTRACTS OF JAPAN vol. 095, no. 005 30 June 1995 (1995-06-30) *

Also Published As

Publication number Publication date
EP0849775A2 (de) 1998-06-24
TW432492B (en) 2001-05-01
KR100490013B1 (ko) 2005-09-02
KR19980064236A (ko) 1998-10-07
US6132519A (en) 2000-10-17
JPH10177961A (ja) 1998-06-30

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