EP0841167B1 - Méthode de production d'un trou tranversant et utilisation de cette méthode pour produire un substrat silicon avec un trou traversant ou un dispositif utilisant ce substrat, méthode de production d'une imprimant à jet d'encre et utilisation de cette méthode pour produire une imprimante à jet d'encre - Google Patents
Méthode de production d'un trou tranversant et utilisation de cette méthode pour produire un substrat silicon avec un trou traversant ou un dispositif utilisant ce substrat, méthode de production d'une imprimant à jet d'encre et utilisation de cette méthode pour produire une imprimante à jet d'encre Download PDFInfo
- Publication number
- EP0841167B1 EP0841167B1 EP19970119648 EP97119648A EP0841167B1 EP 0841167 B1 EP0841167 B1 EP 0841167B1 EP 19970119648 EP19970119648 EP 19970119648 EP 97119648 A EP97119648 A EP 97119648A EP 0841167 B1 EP0841167 B1 EP 0841167B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- hole
- layer
- silicon
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 327
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 196
- 229910052710 silicon Inorganic materials 0.000 title claims description 196
- 239000010703 silicon Substances 0.000 title claims description 196
- 238000000034 method Methods 0.000 title claims description 172
- 238000004519 manufacturing process Methods 0.000 title description 20
- 238000005530 etching Methods 0.000 claims description 150
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 123
- 239000010408 film Substances 0.000 claims description 113
- 239000013078 crystal Substances 0.000 claims description 77
- 230000008569 process Effects 0.000 claims description 70
- 239000000377 silicon dioxide Substances 0.000 claims description 58
- 235000012239 silicon dioxide Nutrition 0.000 claims description 57
- 238000002161 passivation Methods 0.000 claims description 55
- 230000001419 dependent effect Effects 0.000 claims description 46
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 38
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 33
- 239000012528 membrane Substances 0.000 claims description 30
- 229910021426 porous silicon Inorganic materials 0.000 claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 239000000523 sample Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000007743 anodising Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 52
- 235000012431 wafers Nutrition 0.000 description 41
- 238000012545 processing Methods 0.000 description 24
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 23
- 239000007789 gas Substances 0.000 description 23
- 239000007864 aqueous solution Substances 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 6
- 238000002048 anodisation reaction Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- -1 EDP Chemical compound 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910017903 NH3F Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006268 silicone film Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1637—Manufacturing processes molding
- B41J2/1639—Manufacturing processes molding sacrificial molding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/13—Heads having an integrated circuit
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Pressure Sensors (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Micromachines (AREA)
Claims (21)
- Procédé de production d'un trou débouchant (19 ; 109) dans un substrat de silicium (10 ; 100), ledit procédé comprenant les étapes consistant à :(a) former une couche sacrificielle (11 ; 111) faite d'un film de silicium polycristallin sur la surface principale dudit substrat (10 ; 100), à un endroit où le trou débouchant (19 ; 109) sera formé, ladite couche sacrificielle (11 ; 111) étant capable d'être gravée sélectivement sans que soit gravé le matériau dudit substrat (10 ; 100) ;(b) former une couche de passivation (12 ; 112) offrant une résistance à un processus de gravure sur ledit substrat (10 ; 100), de manière à ce que ladite couche sacrificielle (11 ; 111) soit recouverte par ladite couche de passivation (12 ; 112) ;(c) former une couche de masque de gravure (13 ; 102) sur la surface postérieure dudit substrat (10 ; 100), ladite couche de masque de gravure (13 ; 102) présentant une ouverture (14 ; 116) correspondant à ladite couche sacrificielle (11 ; 111) ;(d) graver le substrat (10; 100) à l'aide d'un processus de gravure anisotrope dépendant de l'orientation du cristal jusqu'à ce que ladite couche sacrificielle (11; 111) soit exposée au travers de ladite ouverture (14 ; 116) ;(e) éliminer ladite couche sacrificielle (11 ; 111) en gravant ladite couche sacrificielle (11 ; 111) de manière isotrope à partir de la partie qui a été exposée dans ladite étape de gravure du substrat (10, 100) ; et(f) éliminer partiellement ladite couche de passivation (17 ; 97) de manière à former un trou débouchant (19 ; 109).
- Procédé de production d'un trou débouchant (19 ; 109) dans un substrat de silicium (10 ; 100), ledit procédé comprenant les étapes consistant à :(a) former une couche de prévention de la croissance épitaxiale (98) destinée à empêcher la croissance épitaxiale sur une partie dudit substrat (100), puis à former une couche épitaxiale (99) sur ledit substrat (100), formant ainsi une couche sacrificielle (111) capable d'être gravée sélectivement sans que soit gravé le matériau dudit substrat (10; 100), ladite couche sacrificielle étant formée sur ladite couche de prévention de la croissance épitaxiale (98) à un endroit où le trou débouchant (109) sera formé ;(b) former une couche de passivation (12 ; 112) offrant une résistance à un processus de gravure sur ledit substrat (10 ; 100), de manière à ce que ladite couche sacrificielle (11 ; 111) soit recouverte par ladite couche de passivation (12 ; 112) ;(c) former une couche de masque de gravure (13 ; 102) sur la surface postérieure dudit substrat (10 ; 100), ladite couche de masque de gravure (13 ; 102) présentant une ouverture (14 ; 116) correspondant à ladite couche sacrificielle (11 ; 111) ;(d) graver le substrat (10 ; 100) à l'aide d'un processus de gravure anisotrope dépendant de l'orientation du cristal jusqu'à ce que ladite couche sacrificielle (98) soit exposée au travers de ladite ouverture (14 ; 116) ;(e) éliminer la partie de ladite couche de prévention de la croissance épitaxiale (98) exposée dans ladite étape de gravure du substrat (10, 100) ;(f) éliminer ladite couche sacrificielle (11 ; 111) en la gravant au travers de la partie éliminée de ladite couche de prévention de la croissance (98) ; et(g) éliminer partiellement ladite couche de passivation (17 ; 97) de manière à former un trou débouchant (19 ; 109).
- Procédé de production d'un trou débouchant (19 ; 109) selon la revendication 1 ou 2, dans lequel une membrane de ladite couche de passivation (12 ; 112) est formée en gravant ladite couche sacrificielle (11 ; 111).
- Procédé de production d'un trou débouchant (19 ; 109) selon la revendication 1 ou 2, dans lequel ledit processus de gravure anisotrope est réalisé en utilisant une solution de TMAH.
- Procédé de production d'un trou débouchant (19 ; 109) selon la revendication 1 ou 2, dans lequel la taille de l'ouverture (14 ; 116) et la taille de la couche sacrificielle (11 ; 111) sont déterminées afin que, lorsqu'un trou débouchant (19 ; 109) est formé dans le substrat (10 ; 100) en attaquant le substrat (10 ; 100) au travers de l'ouverture (14 ; 116), la taille du trou débouchant (19 ; 109) obtenu, mesurée sur la surface principale du substrat (10 ; 100) est inférieure à celle de la couche sacrificielle (19 ; 169).
- Procédé de production d'un trou débouchant (19 ; 109) selon la revendication 6, dans lequel ledit substrat (10 ; 100) possède une surface cristalline (100).
- Procédé de production, d'un trou débouchant (19 ; 109) selon la revendication 6, dans lequel la taille d1 de la couche sacrificielle (11 ; 111) est sélectionnée pour satisfaire la relation suivante :
- Procédé de production d'un trou débouchant (19 ; 109) selon la revendication 6, dans lequel ledit substrat (10 ; 100) a une surface cristalline décalée d'une surface cristalline (100) d'un angle α (°) et la taille d1 de la couche sacrificielle (11 ; 111) est sélectionnée pour satisfaire la relation suivante :
- Procédé de production d'un trou débouchant (19 ; 109) selon la revendication 1, dans lequel la partie dudit substrat (10 ; 100) en contact direct avec ladite couche sacrificielle (11 ; 111) est également gravée pendant l'étape de gravure de ladite couche sacrificielle (11 ; 111).
- Procédé de production d'un trou débouchant (19 ; 109) selon la revendication 1 ou 2, dans lequel ladite couche sacrificielle (11 ; 111) est formée sur ledit substrat (10 ; 100) de manière encastrée en anodisant ledit substrat (10 ; 100) et en le convertissant ainsi en un matériau poreux.
- Procédé de production d'un trou débouchant (19 ; 109) selon la revendication 1 ou 2, dans lequel ladite couche sacrificielle (11 ; 111) est faite de dioxyde de silicium formé en oxydant du silicium poreux formé sur ledit substrat (10 ; 100) de manière encastrée en anodisant ledit substrat (10 ; 100) et en le convertissant ainsi en un silicium poreux.
- Procédé de production d'un trou débouchant (19 ; 109) selon la revendication 3, dans lequel ladite membrane de la couche de passivation (12 ; 112) présente une contrainte en traction.
- Procédé de production d'un trou débouchant (19 ; 109) selon la revendication 12, dans lequel ladite couche de passivation (12 ; 112) est un film de nitrure de silicium formé à l'aide d'une technologie CVD à basse pression.
- Procédé de production d'un trou débouchant (19 ; 109) selon la revendication 13, dans lequel ladite couche de passivation (12 ; 112) est tracée de manière à ne subsister que près du trou débouchant.
- Procédé de production d'une tête d'impression à jet d'encre comprenant un trou de décharge (106) pour décharger de l'encre, un trajet de circulation d'encre (107) en communication avec ledit trou de décharge (106), un substrat (100) ayant un générateur d'énergie de décharge (103) afin de décharger de l'encre, et un trou débouchant (109) servant de trou de fourniture d'encre destiné à fournir de l'encre audit trajet de circulation d'encre (107), dans lequel ledit trou débouchant (109) servant de trou de fourniture d'encre est obtenu par le procédé selon l'une quelconque des revendications 1 à 14.
- Utilisation d'un procédé selon l'une quelconque des revendications 1 à 14 pour produire un substrat de silicium comprenant un élément fonctionnel et un trou débouchant (19 ; 109) ainsi obtenu, où ledit substrat de silicium (10 ; 100) est caractérisé en ce que le diamètre d'ouverture d' du trou débouchant (19 ; 109), mesuré à la surface sur laquelle est formé ledit élément fonctionnel, satisfait la relation suivante :
- Utilisation selon la revendication 16 afin de produire une poutre en porte-à-faux destinée à être utilisée dans un microscope en champ proche, dans laquelle ledit élément fonctionnel est une poutre en porte-à-faux en film mince (26) dont l'une des extrémités est fixée audit substrat (10 ; 100).
- Utilisation d'un procédé selon la revendication 15 pour produire une tête d'impression à jet d'encre comprenant un trou de décharge (106) pour décharger de l'encre, un trajet de circulation d'encre (107) en communication avec ledit trou de décharge (106), un substrat (100) ayant un générateur d'énergie de décharge (103) afin de décharger de l'encre et un trou débouchant (109) formé en gravant le substrat (100) par sa surface postérieure, opposée à la surface sur laquelle ledit générateur d'énergie de décharge (103) est formé, si bien que ledit trou débouchant sert de trou de fourniture d'encre destiné à fournir de l'encre audit trajet de circulation d'encre (107),
ledit substrat de silicium (100) étant caractérisé en ce que le diamètre d'ouverture d' du trou débouchant, mesuré à la surface, sur laquelle est formé ledit élément fonctionne, satisfait la relation suivante : - Utilisation selon la revendication 18, dans laquelle ledit substrat de silicium (10 ; 100) comprend un élément actif formé à la surface sur laquelle est formé ledit générateur d'énergie de décharge.
- Utilisation selon, la revendication 18, dans laquelle ledit substrat de silicium (10 ; 100) comprend une membrane de film de SiN dans la région du trou de fourniture d'encre.
- Utilisation selon la revendication 20, dans laquelle ledit film de SiN est formé sur le substrat de silicium de manière à ce que ledit élément actif ne soit pas couvert par ledit film de SiN.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29864396 | 1996-11-11 | ||
| JP29864296 | 1996-11-11 | ||
| JP298642/96 | 1996-11-11 | ||
| JP29864296 | 1996-11-11 | ||
| JP29864396 | 1996-11-11 | ||
| JP298643/96 | 1996-11-11 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0841167A2 EP0841167A2 (fr) | 1998-05-13 |
| EP0841167A3 EP0841167A3 (fr) | 2000-03-08 |
| EP0841167B1 true EP0841167B1 (fr) | 2004-09-15 |
Family
ID=26561605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP19970119648 Expired - Lifetime EP0841167B1 (fr) | 1996-11-11 | 1997-11-10 | Méthode de production d'un trou tranversant et utilisation de cette méthode pour produire un substrat silicon avec un trou traversant ou un dispositif utilisant ce substrat, méthode de production d'une imprimant à jet d'encre et utilisation de cette méthode pour produire une imprimante à jet d'encre |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0841167B1 (fr) |
| DE (1) | DE69730667T2 (fr) |
| DK (1) | DK0841167T3 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009067123A1 (fr) * | 2007-11-24 | 2009-05-28 | Hewlett-Packard Development Company, L.P. | Matrice de tête d'impression de dispositif d'impression à jet d'encre comportant une couche de protection de bord pour résistance chauffante |
| CN101820570B (zh) * | 2006-10-13 | 2013-08-21 | 欧姆龙株式会社 | 麦克风 |
| CN103281661A (zh) * | 2013-05-09 | 2013-09-04 | 上海集成电路研发中心有限公司 | 一种mems麦克风结构及其制造方法 |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6336714B1 (en) | 1996-02-07 | 2002-01-08 | Hewlett-Packard Company | Fully integrated thermal inkjet printhead having thin film layer shelf |
| US6273557B1 (en) | 1998-03-02 | 2001-08-14 | Hewlett-Packard Company | Micromachined ink feed channels for an inkjet printhead |
| US6379571B1 (en) * | 1998-06-11 | 2002-04-30 | Canon Kabushiki Kaisha | Etching method for processing substrate, dry etching method for polyetheramide resin layer, production method of ink-jet printing head, ink-jet head and ink-jet printing apparatus |
| JP4690556B2 (ja) * | 2000-07-21 | 2011-06-01 | 大日本印刷株式会社 | 微細パターン形成装置と微細ノズルの製造方法 |
| IT1320599B1 (it) | 2000-08-23 | 2003-12-10 | Olivetti Lexikon Spa | Testina di stampa monolitica con scanalatura autoallineata e relativoprocesso di fabbricazione. |
| US6675476B2 (en) | 2000-12-05 | 2004-01-13 | Hewlett-Packard Development Company, L.P. | Slotted substrates and techniques for forming same |
| US6419346B1 (en) | 2001-01-25 | 2002-07-16 | Hewlett-Packard Company | Two-step trench etch for a fully integrated thermal inkjet printhead |
| US6481832B2 (en) | 2001-01-29 | 2002-11-19 | Hewlett-Packard Company | Fluid-jet ejection device |
| US6517735B2 (en) | 2001-03-15 | 2003-02-11 | Hewlett-Packard Company | Ink feed trench etch technique for a fully integrated thermal inkjet printhead |
| US6818138B2 (en) | 2001-06-22 | 2004-11-16 | Hewlett-Packard Development Company, L.P. | Slotted substrate and slotting process |
| DE60222969T2 (de) * | 2001-08-10 | 2008-07-24 | Canon K.K. | Verfahren zur Herstellung eines Flüssigkeitsausstosskopfes, Substrat für einen Flüssigkeitsausstosskopf und dazugehöriges Herstellungsverfahren |
| ITTO20011019A1 (it) * | 2001-10-25 | 2003-04-28 | Olivetti I Jet | Procedimento perfezionato per la costruzione di un condotto di alimentazione per una testina di stampa a getto di inchiostro. |
| US7105097B2 (en) | 2002-01-31 | 2006-09-12 | Hewlett-Packard Development Company, L.P. | Substrate and method of forming substrate for fluid ejection device |
| US6648454B1 (en) | 2002-10-30 | 2003-11-18 | Hewlett-Packard Development Company, L.P. | Slotted substrate and method of making |
| US6880926B2 (en) | 2002-10-31 | 2005-04-19 | Hewlett-Packard Development Company, L.P. | Circulation through compound slots |
| CN100355573C (zh) | 2002-12-27 | 2007-12-19 | 佳能株式会社 | 用于制造喷墨记录头的基础件 |
| US6883903B2 (en) | 2003-01-21 | 2005-04-26 | Martha A. Truninger | Flextensional transducer and method of forming flextensional transducer |
| US6821450B2 (en) | 2003-01-21 | 2004-11-23 | Hewlett-Packard Development Company, L.P. | Substrate and method of forming substrate for fluid ejection device |
| KR100480791B1 (ko) * | 2003-06-05 | 2005-04-06 | 삼성전자주식회사 | 일체형 잉크젯 프린트헤드 및 그 제조방법 |
| JP2005035281A (ja) * | 2003-06-23 | 2005-02-10 | Canon Inc | 液体吐出ヘッドの製造方法 |
| US7429335B2 (en) | 2004-04-29 | 2008-09-30 | Shen Buswell | Substrate passage formation |
| DE102005046156B3 (de) * | 2005-09-27 | 2007-05-31 | Siemens Ag | Vorrichtung mit Funktionselement und Verfahren zum Herstellen der Vorrichtung |
| DE102007031549B4 (de) | 2007-07-06 | 2021-07-08 | Robert Bosch Gmbh | Vorrichtung aus einkristallinem Silizium und Verfahren zur Herstellung einer Vorrichtung aus einkristallinem Silizium |
| US9136160B2 (en) | 2012-06-29 | 2015-09-15 | Institute of Microelectronics, Chinese Academy of Sciences | Solid hole array and method for forming the same |
| CN103510088B (zh) * | 2012-06-29 | 2015-11-11 | 中国科学院微电子研究所 | 固态孔阵及其制作方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4784721A (en) * | 1988-02-22 | 1988-11-15 | Honeywell Inc. | Integrated thin-film diaphragm; backside etch |
| US5308442A (en) * | 1993-01-25 | 1994-05-03 | Hewlett-Packard Company | Anisotropically etched ink fill slots in silicon |
| US5387314A (en) * | 1993-01-25 | 1995-02-07 | Hewlett-Packard Company | Fabrication of ink fill slots in thermal ink-jet printheads utilizing chemical micromachining |
| JP3343875B2 (ja) | 1995-06-30 | 2002-11-11 | キヤノン株式会社 | インクジェットヘッドの製造方法 |
-
1997
- 1997-11-10 EP EP19970119648 patent/EP0841167B1/fr not_active Expired - Lifetime
- 1997-11-10 DK DK97119648T patent/DK0841167T3/da active
- 1997-11-10 DE DE69730667T patent/DE69730667T2/de not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820570B (zh) * | 2006-10-13 | 2013-08-21 | 欧姆龙株式会社 | 麦克风 |
| WO2009067123A1 (fr) * | 2007-11-24 | 2009-05-28 | Hewlett-Packard Development Company, L.P. | Matrice de tête d'impression de dispositif d'impression à jet d'encre comportant une couche de protection de bord pour résistance chauffante |
| CN103281661A (zh) * | 2013-05-09 | 2013-09-04 | 上海集成电路研发中心有限公司 | 一种mems麦克风结构及其制造方法 |
| CN103281661B (zh) * | 2013-05-09 | 2019-02-05 | 上海集成电路研发中心有限公司 | 一种mems麦克风结构及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69730667T2 (de) | 2005-09-22 |
| DE69730667D1 (de) | 2004-10-21 |
| EP0841167A3 (fr) | 2000-03-08 |
| DK0841167T3 (da) | 2005-01-24 |
| EP0841167A2 (fr) | 1998-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6143190A (en) | Method of producing a through-hole, silicon substrate having a through-hole, device using such a substrate, method of producing an ink-jet print head, and ink-jet print head | |
| EP0841167B1 (fr) | Méthode de production d'un trou tranversant et utilisation de cette méthode pour produire un substrat silicon avec un trou traversant ou un dispositif utilisant ce substrat, méthode de production d'une imprimant à jet d'encre et utilisation de cette méthode pour produire une imprimante à jet d'encre | |
| Lee et al. | A thermal inkjet printhead with a monolithically fabricated nozzle plate and self-aligned ink feed hole | |
| EP0665590B1 (fr) | Procédé de fabrication d'une microstructure mécanique | |
| US8043950B2 (en) | Semiconductor device and manufacturing method thereof | |
| US6117701A (en) | Method for manufacturing a rate-of-rotation sensor | |
| WO2010134302A2 (fr) | Procédé de fabrication de transducteur électromécanique capacitif | |
| US6303042B1 (en) | Making ink jet nozzle plates | |
| US8828243B2 (en) | Scanning probe having integrated silicon tip with cantilever | |
| EP1587139A2 (fr) | Procédé de fabrication d'une couche de tantale et dispositif comprenant une couche de tantale | |
| US6013573A (en) | Method of manufacturing an air bridge type structure for supporting a micro-structure | |
| US6214245B1 (en) | Forming-ink jet nozzle plate layer on a base | |
| JP2007222990A (ja) | 梁部を備えた構造体の製造方法およびｍｅｍｓデバイス | |
| US6238584B1 (en) | Method of forming ink jet nozzle plates | |
| EP1482069A1 (fr) | Méthode de production d'une couche polycristalline de silicium germanium adaptée au micro-usinage | |
| US6258286B1 (en) | Making ink jet nozzle plates using bore liners | |
| JPH11293486A (ja) | マイクロ構造体の作製方法 | |
| Ashruf et al. | Galvanic etching for sensor fabrication | |
| US8058182B2 (en) | Surface micromachining process of MEMS ink jet drop ejectors on glass substrates | |
| Lucas et al. | Polysilicon cantilever beam using surface micromachining technology for application in microswitches | |
| Kakushima et al. | Micromachined tools for nano technology. Twin nano-probes and nano-scale gap control by integrated microactuators | |
| Rahman et al. | Multistage anisotropic wet etching by KOH for MEMS/NEMS structures | |
| Vieider et al. | A new process for combining anisotropic bulk etching with subsequent precision lithography | |
| CN101311105B (zh) | 利用无电极电化学腐蚀自停止制作的纳米梁结构与方法 | |
| Yoon et al. | Influence of interface structure on chemical etching process for air gap of microelectromechanical system based on surface micromachining |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): CH DE DK FR GB LI NL |
|
| AX | Request for extension of the european patent |
Free format text: AL;LT;LV;MK;RO;SI |
|
| PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
| AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
| AX | Request for extension of the european patent |
Free format text: AL;LT;LV;MK;RO;SI |
|
| 17P | Request for examination filed |
Effective date: 20000720 |
|
| AKX | Designation fees paid |
Free format text: CH DE DK FR GB LI NL |
|
| 17Q | First examination report despatched |
Effective date: 20021017 |
|
| GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
| RTI1 | Title (correction) |
Free format text: METHOD OF PRODUCING A THROUGH-HOLE AND THE USE OF SAID METHOD TO PRODUCE A SILICON SUBSTRATE HAVING A THROUGH-HOLE OR A D |
|
| RTI1 | Title (correction) |
Free format text: METHOD OF PRODUCING A THROUGH-HOLE AND THE USE OF SAID METHOD TO PRODUCE A SILICON SUBSTRATE HAVING A THROUGH-HOLE OR A D |
|
| GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
| GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
| RTI1 | Title (correction) |
Free format text: METHOD OF PRODUCING A THROUGH-HOLE AND THE USE OF SAID METHOD TO PRODUCE A SILICON SUBSTRATE HAVING A THROUGH-HOLE OR A D |
|
| AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): CH DE DK FR GB LI NL |
|
| REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D Ref country code: CH Ref legal event code: EP |
|
| REF | Corresponds to: |
Ref document number: 69730667 Country of ref document: DE Date of ref document: 20041021 Kind code of ref document: P |
|
| REG | Reference to a national code |
Ref country code: CH Ref legal event code: NV Representative=s name: BOVARD AG PATENTANWAELTE |
|
| REG | Reference to a national code |
Ref country code: DK Ref legal event code: T3 |
|
| ET | Fr: translation filed | ||
| PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
| 26N | No opposition filed |
Effective date: 20050616 |
|
| REG | Reference to a national code |
Ref country code: CH Ref legal event code: PFA Owner name: CANON KABUSHIKI KAISHA Free format text: CANON KABUSHIKI KAISHA#30-2, 3-CHOME, SHIMOMARUKO, OHTA-KU#TOKYO (JP) -TRANSFER TO- CANON KABUSHIKI KAISHA#30-2, 3-CHOME, SHIMOMARUKO, OHTA-KU#TOKYO (JP) |
|
| REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 19 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DK Payment date: 20151123 Year of fee payment: 19 Ref country code: CH Payment date: 20151217 Year of fee payment: 19 Ref country code: GB Payment date: 20151125 Year of fee payment: 19 Ref country code: DE Payment date: 20151130 Year of fee payment: 19 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20151127 Year of fee payment: 19 Ref country code: NL Payment date: 20151008 Year of fee payment: 19 |
|
| REG | Reference to a national code |
Ref country code: DE Ref legal event code: R119 Ref document number: 69730667 Country of ref document: DE |
|
| REG | Reference to a national code |
Ref country code: DK Ref legal event code: EBP Effective date: 20161130 |
|
| REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
| REG | Reference to a national code |
Ref country code: NL Ref legal event code: MM Effective date: 20161201 |
|
| GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20161110 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20161130 Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20161130 |
|
| REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST Effective date: 20170731 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20161201 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20161130 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20161110 Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170601 Ref country code: DK Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20161130 |