EP0841167A2 - Méthode de production d'un trou traversant, substrat silicon avec un trou traversant, dispositif utilisant un substrat méthode de production d'une tête d'impression à jet d'encre et tête d'impression à jet d'encre - Google Patents
Méthode de production d'un trou traversant, substrat silicon avec un trou traversant, dispositif utilisant un substrat méthode de production d'une tête d'impression à jet d'encre et tête d'impression à jet d'encre Download PDFInfo
- Publication number
- EP0841167A2 EP0841167A2 EP97119648A EP97119648A EP0841167A2 EP 0841167 A2 EP0841167 A2 EP 0841167A2 EP 97119648 A EP97119648 A EP 97119648A EP 97119648 A EP97119648 A EP 97119648A EP 0841167 A2 EP0841167 A2 EP 0841167A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- hole
- layer
- producing
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 394
- 238000000034 method Methods 0.000 title claims abstract description 224
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 198
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 198
- 239000010703 silicon Substances 0.000 title claims abstract description 198
- 238000005530 etching Methods 0.000 claims abstract description 194
- 239000013078 crystal Substances 0.000 claims abstract description 91
- 230000008569 process Effects 0.000 claims abstract description 80
- 238000002161 passivation Methods 0.000 claims abstract description 76
- 230000001419 dependent effect Effects 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 127
- 239000010408 film Substances 0.000 claims description 119
- 239000000377 silicon dioxide Substances 0.000 claims description 60
- 235000012239 silicon dioxide Nutrition 0.000 claims description 60
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 50
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 40
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 39
- 239000012528 membrane Substances 0.000 claims description 37
- 229910021426 porous silicon Inorganic materials 0.000 claims description 35
- 239000010409 thin film Substances 0.000 claims description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 20
- 238000007743 anodising Methods 0.000 claims description 9
- 239000000523 sample Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 239000011148 porous material Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 abstract description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 52
- 235000012431 wafers Nutrition 0.000 description 40
- 238000012545 processing Methods 0.000 description 24
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 23
- 239000007789 gas Substances 0.000 description 23
- 239000007864 aqueous solution Substances 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 6
- 238000002048 anodisation reaction Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- -1 EDP Chemical compound 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910017903 NH3F Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1637—Manufacturing processes molding
- B41J2/1639—Manufacturing processes molding sacrificial molding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/13—Heads having an integrated circuit
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29864396 | 1996-11-11 | ||
| JP29864296 | 1996-11-11 | ||
| JP298642/96 | 1996-11-11 | ||
| JP29864296 | 1996-11-11 | ||
| JP29864396 | 1996-11-11 | ||
| JP298643/96 | 1996-11-11 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0841167A2 true EP0841167A2 (fr) | 1998-05-13 |
| EP0841167A3 EP0841167A3 (fr) | 2000-03-08 |
| EP0841167B1 EP0841167B1 (fr) | 2004-09-15 |
Family
ID=26561605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP19970119648 Expired - Lifetime EP0841167B1 (fr) | 1996-11-11 | 1997-11-10 | Méthode de production d'un trou tranversant et utilisation de cette méthode pour produire un substrat silicon avec un trou traversant ou un dispositif utilisant ce substrat, méthode de production d'une imprimant à jet d'encre et utilisation de cette méthode pour produire une imprimante à jet d'encre |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0841167B1 (fr) |
| DE (1) | DE69730667T2 (fr) |
| DK (1) | DK0841167T3 (fr) |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0964440A2 (fr) * | 1998-06-11 | 1999-12-15 | Canon Kabushiki Kaisha | Procédé de gravure pour le traitement de substrats, procédé de gravure séche pour couche de résine polyéthéramide, procédé de production d'une tête d'impression à jet d'encre et dispositif d'impression à jet d'encre |
| US6273557B1 (en) | 1998-03-02 | 2001-08-14 | Hewlett-Packard Company | Micromachined ink feed channels for an inkjet printhead |
| US6336714B1 (en) | 1996-02-07 | 2002-01-08 | Hewlett-Packard Company | Fully integrated thermal inkjet printhead having thin film layer shelf |
| WO2002016140A1 (fr) * | 2000-08-23 | 2002-02-28 | Olivetti Tecnost S.P.A. | Tete d'impression monolithique a cannelures autoalignees et procede de fabrication associe |
| EP1213147A1 (fr) * | 2000-12-05 | 2002-06-12 | Hewlett-Packard Company | Substrat pourvu de fentes et sa méthode de fabrication |
| US6419346B1 (en) | 2001-01-25 | 2002-07-16 | Hewlett-Packard Company | Two-step trench etch for a fully integrated thermal inkjet printhead |
| EP1253626A2 (fr) * | 2000-07-21 | 2002-10-30 | Dai Nippon Printing Co., Ltd. | Technique de dessin a motifs fins |
| US6481832B2 (en) | 2001-01-29 | 2002-11-19 | Hewlett-Packard Company | Fluid-jet ejection device |
| EP1270233A1 (fr) * | 2001-06-22 | 2003-01-02 | Hewlett-Packard Company | Substrat pourvu de fentes et procédé de rainurage |
| US6517735B2 (en) | 2001-03-15 | 2003-02-11 | Hewlett-Packard Company | Ink feed trench etch technique for a fully integrated thermal inkjet printhead |
| EP1284188A2 (fr) * | 2001-08-10 | 2003-02-19 | Canon Kabushiki Kaisha | Procédé pour la fabrication d'une tête de jet de liquide, substrat pour une tête de jet de liquide et sa méthode de fabrication |
| WO2003035401A1 (fr) * | 2001-10-25 | 2003-05-01 | Olivetti I-Jet S.P.A. | Procede perfectionne de fabrication d'un conduit d'alimentation pour une tete d'impression jet d'encre |
| US6648454B1 (en) | 2002-10-30 | 2003-11-18 | Hewlett-Packard Development Company, L.P. | Slotted substrate and method of making |
| EP1433609A1 (fr) * | 2002-12-27 | 2004-06-30 | Canon Kabushiki Kaisha | Tête d'enregistrement à jet d'encre, sa procédé de fabrication, et substrat pour fabrication d'une tête d'enregistrement à jet d'encre |
| US6776916B2 (en) | 2002-01-31 | 2004-08-17 | Hewlett-Packard Development Company, L.P. | Substrate and method of forming substrate for fluid ejection device |
| US6821450B2 (en) | 2003-01-21 | 2004-11-23 | Hewlett-Packard Development Company, L.P. | Substrate and method of forming substrate for fluid ejection device |
| EP1484178A1 (fr) * | 2003-06-05 | 2004-12-08 | Samsung Electronics Co., Ltd. | Tête d'imprimante à jet d'encre monolithique et sa méthode de fabrication |
| EP1491342A1 (fr) * | 2003-06-23 | 2004-12-29 | Canon Kabushiki Kaisha | Procédé de fabrication d'une tête d'éjection de liquide |
| US6880926B2 (en) | 2002-10-31 | 2005-04-19 | Hewlett-Packard Development Company, L.P. | Circulation through compound slots |
| US6883903B2 (en) | 2003-01-21 | 2005-04-26 | Martha A. Truninger | Flextensional transducer and method of forming flextensional transducer |
| US7429335B2 (en) | 2004-04-29 | 2008-09-30 | Shen Buswell | Substrate passage formation |
| CN103510088A (zh) * | 2012-06-29 | 2014-01-15 | 中国科学院微电子研究所 | 固态孔阵及其制作方法 |
| US9136160B2 (en) | 2012-06-29 | 2015-09-15 | Institute of Microelectronics, Chinese Academy of Sciences | Solid hole array and method for forming the same |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005046156B3 (de) * | 2005-09-27 | 2007-05-31 | Siemens Ag | Vorrichtung mit Funktionselement und Verfahren zum Herstellen der Vorrichtung |
| JP4144640B2 (ja) * | 2006-10-13 | 2008-09-03 | オムロン株式会社 | 振動センサの製造方法 |
| DE102007031549B4 (de) | 2007-07-06 | 2021-07-08 | Robert Bosch Gmbh | Vorrichtung aus einkristallinem Silizium und Verfahren zur Herstellung einer Vorrichtung aus einkristallinem Silizium |
| US20100231655A1 (en) * | 2007-11-24 | 2010-09-16 | Hewlett-Packard Developement Company, L.P. | Inkjet-printing device printhead die having edge protection layer for heating resistor |
| CN103281661B (zh) * | 2013-05-09 | 2019-02-05 | 上海集成电路研发中心有限公司 | 一种mems麦克风结构及其制造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0911479A (ja) | 1995-06-30 | 1997-01-14 | Canon Inc | インクジェットヘッドの製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4784721A (en) * | 1988-02-22 | 1988-11-15 | Honeywell Inc. | Integrated thin-film diaphragm; backside etch |
| US5308442A (en) * | 1993-01-25 | 1994-05-03 | Hewlett-Packard Company | Anisotropically etched ink fill slots in silicon |
| US5387314A (en) * | 1993-01-25 | 1995-02-07 | Hewlett-Packard Company | Fabrication of ink fill slots in thermal ink-jet printheads utilizing chemical micromachining |
-
1997
- 1997-11-10 EP EP19970119648 patent/EP0841167B1/fr not_active Expired - Lifetime
- 1997-11-10 DK DK97119648T patent/DK0841167T3/da active
- 1997-11-10 DE DE69730667T patent/DE69730667T2/de not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0911479A (ja) | 1995-06-30 | 1997-01-14 | Canon Inc | インクジェットヘッドの製造方法 |
Cited By (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6336714B1 (en) | 1996-02-07 | 2002-01-08 | Hewlett-Packard Company | Fully integrated thermal inkjet printhead having thin film layer shelf |
| US6273557B1 (en) | 1998-03-02 | 2001-08-14 | Hewlett-Packard Company | Micromachined ink feed channels for an inkjet printhead |
| US6534247B2 (en) | 1998-03-02 | 2003-03-18 | Hewlett-Packard Company | Method of fabricating micromachined ink feed channels for an inkjet printhead |
| EP0964440A2 (fr) * | 1998-06-11 | 1999-12-15 | Canon Kabushiki Kaisha | Procédé de gravure pour le traitement de substrats, procédé de gravure séche pour couche de résine polyéthéramide, procédé de production d'une tête d'impression à jet d'encre et dispositif d'impression à jet d'encre |
| EP0964440A3 (fr) * | 1998-06-11 | 2000-05-24 | Canon Kabushiki Kaisha | Procédé de gravure pour le traitement de substrats, procédé de gravure séche pour couche de résine polyéthéramide, procédé de production d'une tête d'impression à jet d'encre et dispositif d'impression à jet d'encre |
| US6379571B1 (en) | 1998-06-11 | 2002-04-30 | Canon Kabushiki Kaisha | Etching method for processing substrate, dry etching method for polyetheramide resin layer, production method of ink-jet printing head, ink-jet head and ink-jet printing apparatus |
| EP1253626A4 (fr) * | 2000-07-21 | 2005-08-10 | Dainippon Printing Co Ltd | Technique de dessin a motifs fins |
| EP1253626A2 (fr) * | 2000-07-21 | 2002-10-30 | Dai Nippon Printing Co., Ltd. | Technique de dessin a motifs fins |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE69730667T2 (de) | 2005-09-22 |
| DE69730667D1 (de) | 2004-10-21 |
| EP0841167B1 (fr) | 2004-09-15 |
| EP0841167A3 (fr) | 2000-03-08 |
| DK0841167T3 (da) | 2005-01-24 |
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