CN103510088B - 固态孔阵及其制作方法 - Google Patents
固态孔阵及其制作方法 Download PDFInfo
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- CN103510088B CN103510088B CN201210226670.6A CN201210226670A CN103510088B CN 103510088 B CN103510088 B CN 103510088B CN 201210226670 A CN201210226670 A CN 201210226670A CN 103510088 B CN103510088 B CN 103510088B
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- substrate
- battle array
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/05—Arrays
- B81B2207/056—Arrays of static structures
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
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Abstract
Description
Claims (13)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210226670.6A CN103510088B (zh) | 2012-06-29 | 2012-06-29 | 固态孔阵及其制作方法 |
PCT/CN2012/079388 WO2014000332A1 (zh) | 2012-06-29 | 2012-07-31 | 固态孔阵及其制作方法 |
US13/697,372 US9136160B2 (en) | 2012-06-29 | 2012-07-31 | Solid hole array and method for forming the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210226670.6A CN103510088B (zh) | 2012-06-29 | 2012-06-29 | 固态孔阵及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103510088A CN103510088A (zh) | 2014-01-15 |
CN103510088B true CN103510088B (zh) | 2015-11-11 |
Family
ID=49782137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210226670.6A Active CN103510088B (zh) | 2012-06-29 | 2012-06-29 | 固态孔阵及其制作方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103510088B (zh) |
WO (1) | WO2014000332A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115383613A (zh) * | 2022-10-10 | 2022-11-25 | 苏州安洁科技股份有限公司 | 一种金属内孔毛刺处理方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0841167A2 (en) * | 1996-11-11 | 1998-05-13 | Canon Kabushiki Kaisha | Method of producing a through-hole, silicon substrate having a through-hole, device using such a substrate, method of producing an ink-jet print head, and ink-jet print head |
CN101665231A (zh) * | 2009-09-18 | 2010-03-10 | 上海芯敏微系统技术有限公司 | 一种基于(100)硅片采用双面对穿腐蚀制造薄膜器件结构及方法 |
CN102328899A (zh) * | 2011-08-05 | 2012-01-25 | 上海先进半导体制造股份有限公司 | 不同深度腔体的制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1592641B1 (en) * | 2003-02-03 | 2018-03-07 | President and Fellows of Harvard College | Controlled fabrication of gaps in electrically conducting structures |
US9121843B2 (en) * | 2007-05-08 | 2015-09-01 | Trustees Of Boston University | Chemical functionalization of solid-state nanopores and nanopore arrays and applications thereof |
US8535544B2 (en) * | 2010-07-26 | 2013-09-17 | International Business Machines Corporation | Structure and method to form nanopore |
US8138068B2 (en) * | 2010-08-11 | 2012-03-20 | International Business Machines Corporation | Method to form nanopore array |
-
2012
- 2012-06-29 CN CN201210226670.6A patent/CN103510088B/zh active Active
- 2012-07-31 WO PCT/CN2012/079388 patent/WO2014000332A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0841167A2 (en) * | 1996-11-11 | 1998-05-13 | Canon Kabushiki Kaisha | Method of producing a through-hole, silicon substrate having a through-hole, device using such a substrate, method of producing an ink-jet print head, and ink-jet print head |
CN101665231A (zh) * | 2009-09-18 | 2010-03-10 | 上海芯敏微系统技术有限公司 | 一种基于(100)硅片采用双面对穿腐蚀制造薄膜器件结构及方法 |
CN102328899A (zh) * | 2011-08-05 | 2012-01-25 | 上海先进半导体制造股份有限公司 | 不同深度腔体的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103510088A (zh) | 2014-01-15 |
WO2014000332A1 (zh) | 2014-01-03 |
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TR01 | Transfer of patent right |
Effective date of registration: 20201215 Address after: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee after: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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TR01 | Transfer of patent right |
Effective date of registration: 20220428 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |