EP0800131B1 - Integrierte Stromquellenschaltung - Google Patents

Integrierte Stromquellenschaltung Download PDF

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Publication number
EP0800131B1
EP0800131B1 EP19970400761 EP97400761A EP0800131B1 EP 0800131 B1 EP0800131 B1 EP 0800131B1 EP 19970400761 EP19970400761 EP 19970400761 EP 97400761 A EP97400761 A EP 97400761A EP 0800131 B1 EP0800131 B1 EP 0800131B1
Authority
EP
European Patent Office
Prior art keywords
voltage
transistor
current
current source
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP19970400761
Other languages
English (en)
French (fr)
Other versions
EP0800131A1 (de
Inventor
François Tailliet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, SGS Thomson Microelectronics SA filed Critical STMicroelectronics SA
Publication of EP0800131A1 publication Critical patent/EP0800131A1/de
Application granted granted Critical
Publication of EP0800131B1 publication Critical patent/EP0800131B1/de
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • G05F3/185—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes and field-effect transistors

Definitions

  • the invention relates to a source device for current in integrated circuit, in MOS technology. She particularly applies to the field of non-volatile memories, for high generation programming voltage;
  • Non-volatile memory cells are programmed by means of a high voltage of programming, of the order of twenty volts. But this high voltage must be applied to them in a very progressive, along a linear ramp, so as not to damage the tunnel oxide under their grate.
  • a circuit comprising a capacitor supplied by a source of constant current and means to control the duration steps and the duration of the ramp.
  • this circuit is particularly sensitive to dispersions from the current source.
  • a current source is usually made from a transistor MOS and a polarizing reference voltage source the gate of this transistor.
  • the source of tension maybe typically of the bandgap or Wilson mirror type: these are circuits that use a system of compensation for variations in characteristics, for provide a voltage stable voltage reference.
  • these compensation circuits are complex and the stability obtained is not always satisfactory.
  • An object of the invention is to propose a source of current in much simpler MOS technology, without compensation structure, providing good temperature stability. While all the circuits of the state of the art are biased to the voltage logic supply Vcc of the integrated circuit, in the invention, the current source is polarized at high voltage, to use a zener diode with zener voltage greater than or equal to the supply voltage logical, known to be particularly stable in temperature, to bias a transistor in saturation MOS supplied with high voltage.
  • the circuit particularly simple the invention provides a remarkably stable current in temperature.
  • the invention relates a current source in an integrated circuit in MOS technology, including a controlled MOS transistor on its grid in constant tension to deliver a current.
  • the transistor is polarized in high voltage higher than the supply voltage of the circuit, and a reverse biased zener diode in high voltage is provided to apply between the grid and source of the transistor a stable zener voltage in temperature, greater than or equal to voltage logic supply (Vcc) of the circuit.
  • Vcc voltage logic supply
  • FIG. 1 shows a source device for current according to the invention.
  • a high voltage HV is available in the integrated circuit. In an example taken in the field of non-volatile memories, this high voltage is around twenty volts.
  • This high voltage can come from an external source, for example an input pad of the integrated circuit. She may be produced internally, as shown in Figure 1, by a PC charge pump device, from the logic supply voltage Vcc (approximately 5 volts) of the integrated circuit.
  • a zener diode DZ is polarized between a high voltage HV and the ground. In the example, it has its cathode connected to the high voltage HV and its anode connected to the drain of an N-type MOS transistor 1, the source of which is connected to ground. The gate of transistor 1 receives a bias voltage denoted V ON .
  • the anode of diode DZ is also connected to the gate of a MOS transistor 2, of type P, the source is connected to high voltage HV. Its drain is connected to the drain of a MOS 3 transistor mounted as a diode live polarized (grid and drain connected). Source of the MOS transistor 3 is connected to ground.
  • the DZ diode is a temperature stable diode, with a zener voltage VZ greater than or equal to the logic supply voltage Vcc of the integrated circuit. This zener voltage will typically be around 4.5 at 6 volts. Note that the low-voltage zener diodes zener voltage (below 4 volts) are not sufficiently stable in temperature (coefficient of very negative temperature).
  • Such a temperature stable zener diode in MOS technology is for example a diode obtained according to the manufacturing process described in IT patent 2 2228A / 89 filed in the name of SGS-THOMSON MICROELECTRONICS s.r.l.
  • the MOS transistor 2 is therefore found with the HV voltage on its source and HV-VZ voltage on its wire rack.
  • the source gate voltage VGS is therefore the order of five to six volts, much higher than its threshold voltage (about 0.7 volts for a transistor MOS type P): transistor 2 is saturated.
  • this transistor conducts a constant current, substantially independent of temperature.
  • variations with the temperature of the threshold voltage of the MOS 2 transistor (about 0.7 volts for a P type MOS transistor) become negligible.
  • the stable current obtained according to one or other of the devices shown can be used to generate several other current references, by means of a conventional structure with current mirror, as shown in FIG. 1.
  • a MOS transistor 4 of the type N is thus provided, connected in series with a P-type MOS transistor 5, between ground and the high voltage HV.
  • the MOS transistor 4 has its gate connected to the gate of the MOS transistor 3.
  • the MOS transistor 5 is mounted as a direct diode (gate and drain connected). We know that thus, we obtain a current I ref , directly proportional to the current I ref controlled by the MOS transistor 2.
  • Such a current source in MOS technology according to the invention applies very particularly to the charge of a capacitor to generate a ramp of high tension.
  • Such an application is more interesting specially programming of memory cells non-volatile.
  • the gate of the MOS transistor 5 is connected to the gate of another MOS transistor 6 of the same type P, to reproduce the reference current (by current mirror).
  • This current I ref " makes it possible to charge a capacitor C, under the control of a circuit 7 so as to have the desired step durations as well as the duration of the ramp.
  • the MOS transistor 8 connected in series between the high voltage HV and the MOS transistor 6 simply activates (ON command) the ramp generator, to produce the ramp at output OUT, taken between these two MOS transistors 6 and 8.
  • the invention is particularly simple to implement. work and will be easily integrated into a circuit non-volatile memory (monolithic), with regard to the application more particularly described. Especially, the invention is specially adapted for microcircuits for smart cards. But the invention is not not limit to these areas.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Read Only Memory (AREA)

Claims (5)

  1. Stromquelle in einem integrierten Schaltkreis in MOS-Technologie mit einem MOS-Transistor (2), der über sein Gate durch eine konstante Spannung angesteuert wird, um einen Strom (Iref) auszugeben,
    dadurch gekennzeichnet, daß
    der Transistor mit einer hohen Spannung (HV) vorgespannt wird, die größer als die Versorgungsspannung des Schaltkreises ist, und daß die Stromquelle eine Zener-Diode (DZ) umfaßt, die in Sperrichtung mit einer hohen Spannung vorgespannt ist, um zwischen Gate und Source des Transistors eine temperaturstabile Zener-Spannung (VZ) zu erzeugen, die größer oder gleich der logischen Versorgungsspannung (Vcc) des Schaltkreises ist, so daß der Transistor in Sättigung geht.
  2. Stromquelle nach Anspruch 1, dadurch gekennzeichnet, daß sie eine Stromspiegelstruktur umfaßt, um mehrere proportionale Referenzströme zu erzeugen.
  3. Vorrichtung zum Erzeugen einer Rampe hoher Spannung, dadurch gekennzeichnet, daß sie eine Stromquelle nach Anspruch 1 oder 2 zum Aufladen eines Kondensators umfaßt.
  4. Nicht-flüchtiger Speicher in einem integrierten Schaltkreis, der einen Rampengenerator für eine hohe Spannung zur Programmierung nach Anspruch 3 umfaßt.
  5. Chipkarte mit einem nicht-flüchtigen Speicher nach Anspruch 4.
EP19970400761 1996-04-04 1997-04-02 Integrierte Stromquellenschaltung Expired - Lifetime EP0800131B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9604262A FR2747249B1 (fr) 1996-04-04 1996-04-04 Source de courant en circuit integre
FR9604262 1996-04-04

Publications (2)

Publication Number Publication Date
EP0800131A1 EP0800131A1 (de) 1997-10-08
EP0800131B1 true EP0800131B1 (de) 1998-12-02

Family

ID=9490923

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19970400761 Expired - Lifetime EP0800131B1 (de) 1996-04-04 1997-04-02 Integrierte Stromquellenschaltung

Country Status (3)

Country Link
EP (1) EP0800131B1 (de)
DE (1) DE69700060T2 (de)
FR (1) FR2747249B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2994750B1 (fr) 2012-08-23 2015-12-11 St Microelectronics Rousset Alimentation d'une charge a potentiel flottant

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404477A (en) * 1978-02-22 1983-09-13 Supertex, Inc. Detection circuit and structure therefor

Also Published As

Publication number Publication date
FR2747249A1 (fr) 1997-10-10
EP0800131A1 (de) 1997-10-08
FR2747249B1 (fr) 1998-05-22
DE69700060D1 (de) 1999-01-14
DE69700060T2 (de) 1999-04-29

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