EP0562916B1 - Vorrichtung zur Erzeugung von Bezugsspannungen - Google Patents

Vorrichtung zur Erzeugung von Bezugsspannungen Download PDF

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Publication number
EP0562916B1
EP0562916B1 EP93400689A EP93400689A EP0562916B1 EP 0562916 B1 EP0562916 B1 EP 0562916B1 EP 93400689 A EP93400689 A EP 93400689A EP 93400689 A EP93400689 A EP 93400689A EP 0562916 B1 EP0562916 B1 EP 0562916B1
Authority
EP
European Patent Office
Prior art keywords
transistor
output
transistors
generation stage
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP93400689A
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English (en)
French (fr)
Other versions
EP0562916A1 (de
Inventor
Emilio Cabinet Ballot-Schmit Yero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
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SGS Thomson Microelectronics SA
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Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of EP0562916A1 publication Critical patent/EP0562916A1/de
Application granted granted Critical
Publication of EP0562916B1 publication Critical patent/EP0562916B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/625—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
    • G05F1/63—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc using variable impedances in series with the load as final control devices
    • G05F1/648—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc using variable impedances in series with the load as final control devices being plural resistors among which a selection is made
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Definitions

  • the invention relates to the generation of several reference voltages in an integrated circuit, from an external voltage source and from a generation device. It applies in particular to non-volatile memories.
  • non-volatile memories require numerous reference voltages for read, test, programming or erase operations.
  • Vpp programming voltage
  • bit line voltage applied to the cell drain of six volts
  • source voltage zero volts
  • the voltage applied to the cell drain will no longer be 6 but 7 volts.
  • a device capable of delivering a determined voltage level, to be chosen from several possible.
  • the reference voltage delivered is stable, independent of the load current of the circuit to which it is applied. This device makes it possible to supply a circuit with all of the necessary reference voltages, by logical selection.
  • resistive ratios are used in a resistance chain to obtain different voltage levels and transistors to establish a stable reference voltage at output, as a function of a selected resistive ratio.
  • the invention also relates to a non-volatile memory provided with this device.
  • the device will be controlled by the instruction decoder of the memory to select a determined output voltage level corresponding to a decoded instruction.
  • the reference voltage device mainly comprises a stage for generating a reference voltage on an output 1.
  • a transistor T1 is mounted between a positive voltage source Vc and the output 1 of the generation stage.
  • a transistor T2 is connected in series with a switching transistor Tc1 between output 1 and ground.
  • a transistor T3 is connected in series with a switching transistor Tc2 between output 1 and ground.
  • the gates of the transistors T1, T2, and T3 are respectively polarized by potentials originating from a chain of resistors R1, R2, R3, R4 in series between the positive voltage source Vc and ground.
  • R1 is connected to Vc and R4 to ground.
  • the gate of transistor T1 is connected to the interconnection point between R1 and R2.
  • the gate of transistor T2 is connected to the interconnection point between R2 and R3.
  • the gate of transistor T3 is connected to the interconnection point between R3 and R4.
  • the gates of the switching transistors Tc1, Tc2 are controlled by logic signals S1, S2 coming from a switching logic circuit 100. Only one of the switching transistors can be conductive at a time. In the example, either Tc1 is conductive, or Tc2 is conductive, or none is conductive. These switching transistors have a very low equivalent resistance in conduction. They are assimilated to an open (resistance ⁇ ) or closed (zero resistance) circuit.
  • the logic signals S1 and S2 are in a logic state 1 and 0 respectively.
  • the transistor Tc1 is conductive and brings the drain of the transistor T2 to ground.
  • the transistor Tc2 is blocked and the transistor T3 is therefore also blocked.
  • the source of the transistor T1 being biased at the positive voltage Vc, the potential V1 for biasing the gate of the transistor T1 will impose the saturated regime.
  • the saturation current I will then cause the transistor T2 to also go into saturated state, the gate of the transistor T2 being biased at the potential V2.
  • the two transistors T1 and T2 being identical, it follows that at equilibrium the saturation regime is established for the two transistors with the same gate-source voltage.
  • the output voltage of the generation stage is easily deducted.
  • V1- Vs1 V2 - Vs2
  • Vs1 and Vs2 are the source potentials of transistors T1 and T2 and V1 respectively, V2 their gate potentials (all these potentials are referenced with respect to ground).
  • Vs1 Vc
  • the logic signals S1 and S2 are respectively in a logic state 0 and 1.
  • the transistor Tc2 is conductive and brings the drain of the transistor T3 to ground.
  • the transistor Tc1 is blocked, and the transistor T2 is therefore also blocked.
  • the transistor T1 will impose its saturation current, but this time on the transistor T3 which will go into saturated mode.
  • the two transistors T1 and T3 being identical, it follows that at equilibrium the saturation regime is established for the two transistors with the same gate-source voltage.
  • V1 - Vs1 V3 - Vs3
  • Vs1 and Vs3 are the source potentials respectively of transistors T1 and T3 and V1, V3 their gate potentials (all these potentials are referenced with respect to ground).
  • Vs1 Vc
  • the drain voltage of a programming cell will be VOUT2 (6 volts) in normal programming, while in test, it will be VOUT1 (7 volts).
  • this decoding circuit receives at least the selection signal from the memory CE and the read / write signal from the memory / WE. It generally receives all the signals S necessary to identify a particular operation on the memory.
  • an output stage (delimited in dotted lines in the single figure) is placed after the generation stage to stabilize the output voltage by compensating for its variations by the load current.
  • the output stage preferably comprises a transistor T4 of wide geometry to conduct a strong current. It is controlled on its grid by output 1 of the generation stage and it is connected between the voltage source Vc and output 2 of the output stage.
  • the output stage further comprises three transistors T5, T6 and T7 which form with the transistor T1 a current mirror.
  • the transistors T5 and T6 are placed in series between the positive voltage source Vc and the output 2 of the device.
  • the transistor T7 is placed in series with the transistor T1 between the output 1 of the generation stage and the other transistors T2, T3 of this stage.
  • the transistor T5 is identical to T1.
  • the transistors T6 and T7 are identical, of opposite conduction type to that transistors T1, T5.
  • the transistors T1 and T5 are of type P and the transistors T6 and T7 of type N.
  • the gates of the transistors T6 and T7 are connected together and to the drain of the transistor T6.
  • the gates of transistor T5 and T1 are connected together.
  • the output of the output stage is given in the example of the figure by the common node 2 to the sources of the transistors T6 and T4.
  • the transistors T1 and T5 being identical, and polarized in the same way, the transistor T5 is also in saturated mode and imposes on the transistor T6 its saturation current, equal to the saturation current of the transistor T1.
  • transistors T7 and T6 are identical, that the transistors T1, T5, T7, T6 form a current mirror and that the transistors T1 and T7 impose the same saturation current, we find the reference voltage of output 1 of l generation stage on the drain of transistor T6. As the transistor T6 has its gate and its drain connected together, it is in saturation and the drop in potential between gate and source of the transistor T6 is equal to the gate-source voltage of the transistor T7. We therefore find the voltage of the generation stage on output 2 of the output stage.
  • the voltage on output 2 of the device may decrease due to a too strong current demand from circuit 300.
  • the voltage at the drain of transistor T6 will then decrease and therefore the voltage of the gate of transistor T7 also.
  • the transistor T7 will therefore let less current pass.
  • the saturation current is fixed.
  • the gate voltage of transistor T4 therefore increases and the latter conducts more current: the voltage on output 2 of the output stage will rise.
  • the transistors T4, T5, T6 and T7 therefore form with the transistor T1 a feedback loop which makes it possible to maintain the output voltage by load current compensations.
  • the generation device described can easily be modified to obtain more than two output voltage levels: it suffices to increase the number of transistors in series with a switching transistor accordingly (T2, Tc1; T3, Tc2; T4, Tc3 ; ... etc) and choose an appropriate resistance chain to obtain the desired voltage levels.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Control Of Electrical Variables (AREA)

Claims (4)

  1. Vorrichtung zur Erzeugung von Bezugsspannungen, aufweisend eine Erzeugungsstufe, umfassend:
    - einen ersten Transistor (T1), angeordnet zwischen einer positiven Spannungsquelle (Vc) und einem Ausgang (1) der Erzeugungsstufe, dessen Steuerelektrode auf ein erstes Potential (V1) polarisiert ist;
    - wenigstens einen zweiten (T2) und einen dritten (T3) zum ersten (T1) identischen, parallelen Transistor, deren Steuerelektrode jeweils auf ein entsprechendes Potential (V2 und V3) polarisiert ist und die in Reihe mit einem entsprechenden Schalttransistor zwischen dem Ausgang (1) der Erzeugungsstufe und der Masse geschaltet sind;
    - eine Kette von Widerständen in Reihe (R1 bis R4) zwischen der positiven Spannungsquelle (Vc) und der Masse, um die verschiedenen Potentiale (V1, V2, V3) zur Polarisation der Steuerelektroden der Transistoren abzugeben;
    - logische Mittel (100), um auf einmal einen bestimmten einzigen Schalttransistor leitend zu machen, um am Ausgang (1) der Erzeugungsstufe einen bestimmten Spannungspegel zu erzeugen.
  2. Vorrichtung zur Erzeugung von Bezugsspannungen nach Anspruch 1, dadurch gekennzeichnet, daß sie außerdem eine Ausgangsstufe umfaßt, aufweisend:
    - einen vierten Transistor (T4), geeignet zum Führen eines starken Stroms, der an seiner Steuerelektrode durch den Ausgang (1) der Erzeugungsstufe gesteuert ist und zwischen der positiven Spannungsquelle (Vc) und einem Ausgang (2) der Vorrichtung angeschlossen ist;
    - einen fünften (T5) und einen sechsten (T6) Transistor in Reihe zwischen der positiven Spannungsquelle (Vc) und dem Ausgang (2) der Vorrichtung, wobei eine Leitungselektrode des sechsten Transistors (T6) mit seiner Steuerelektrode und eine andere mit dem Ausgang der Vorrichtung verbunden ist;
    - einen siebten Transistor (T7) in Reihe zwischen dem ersten Transistor (T1) und den weiteren Transistoren (T2, T3) der Erzeugungsstufe;
    wobei der erste Transistor (T1) und der fünfte Transistor (T5) identisch sind und ihre Steuerelektroden miteinander verbunden sind, wobei der sechste (T6) und der siebte (T7) Transistor identisch sind, wobei ihre Steuerelektroden miteinander verbunden sind, und sie vom Leitfähigkeitstyp entgegengesetzt zu demjenigen des ersten und fünften Transistors sind.
  3. Elektrisch programmierbarer Speicher, umfassend eine Vorrichtung zur Erzeugung von Bezugsspannungen nach Anspruch 1 oder 2.
  4. Elektrisch programmierbarer Speicher nach Anspruch 3, dadurch gekennzeichnet, daß die logischen Mittel (100) zum Leitendmachen eines gegebenen Schalttransistors durch Mittel zur Dekodierung der Instruktionen (200) gesteuert sind, um einen bestimmten Spannungspegel abhängig von einem dekodierten Befehl auszuwählen.
EP93400689A 1992-03-18 1993-03-17 Vorrichtung zur Erzeugung von Bezugsspannungen Expired - Lifetime EP0562916B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9203213A FR2688952B1 (fr) 1992-03-18 1992-03-18 Dispositif de generation de tension de reference.
FR9203213 1992-03-18

Publications (2)

Publication Number Publication Date
EP0562916A1 EP0562916A1 (de) 1993-09-29
EP0562916B1 true EP0562916B1 (de) 1994-11-09

Family

ID=9427789

Family Applications (1)

Application Number Title Priority Date Filing Date
EP93400689A Expired - Lifetime EP0562916B1 (de) 1992-03-18 1993-03-17 Vorrichtung zur Erzeugung von Bezugsspannungen

Country Status (4)

Country Link
US (1) US5331599A (de)
EP (1) EP0562916B1 (de)
DE (1) DE69300024T2 (de)
FR (1) FR2688952B1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2925422B2 (ja) * 1993-03-12 1999-07-28 株式会社東芝 半導体集積回路
US5420798A (en) * 1993-09-30 1995-05-30 Macronix International Co., Ltd. Supply voltage detection circuit
EP0676768B1 (de) * 1994-03-28 2000-12-27 STMicroelectronics S.r.l. Verfahren und Schaltung zur Referenzsignalerzeugung zur Differentialauswertung des Inhalts von nichtflüchtigen Speicherzellen
US5650973A (en) * 1994-09-27 1997-07-22 Micrel, Inc. PCMCIA power multiplexer integrated circuit with programmable decode
CN1109347C (zh) * 1994-10-19 2003-05-21 英特尔公司 快速存储器的电源
US5594360A (en) * 1994-10-19 1997-01-14 Intel Corporation Low current reduced area programming voltage detector for flash memory
EP0740260B1 (de) * 1995-04-28 2001-08-22 STMicroelectronics S.r.l. Analoger Fuzzy-Prozessor mit Temperaturkompensation
EP0740261B1 (de) * 1995-04-28 2002-09-25 STMicroelectronics S.r.l. Programmierbarer analoger Fuzzy-Prozessor
US5504447A (en) * 1995-06-07 1996-04-02 United Memories Inc. Transistor programmable divider circuit
US5959891A (en) * 1996-08-16 1999-09-28 Altera Corporation Evaluation of memory cell characteristics
US5867715A (en) * 1996-10-21 1999-02-02 Abit Computer Corporation Apparatus for programmably converting an operating voltage of a CPU and chipset
US5889721A (en) * 1997-08-21 1999-03-30 Integrated Silicon Solution, Inc. Method and apparatus for operating functions relating to memory and/or applications that employ memory in accordance with available power
KR100498418B1 (ko) * 1997-12-27 2005-09-08 삼성전자주식회사 기준전압발생장치
US6119252A (en) * 1998-02-10 2000-09-12 Micron Technology Integrated circuit test mode with externally forced reference voltage
JP3558964B2 (ja) * 1999-07-23 2004-08-25 シャープ株式会社 半導体集積回路の検査装置及びその検査方法
JP3636968B2 (ja) * 2000-06-05 2005-04-06 エルピーダメモリ株式会社 半導体装置及びそのテスト方法
FR2819954B1 (fr) * 2001-01-24 2003-04-11 St Microelectronics Sa Dispositif de commande d'un circuit de generation de tensions de reference
KR100466074B1 (ko) * 2002-07-10 2005-01-13 삼성전기주식회사 기준전압의 오차보상이 가능한 기준전압발생기 및 이를이용한 자동 이득 조절장치
KR100529615B1 (ko) * 2003-12-24 2005-11-17 동부아남반도체 주식회사 트랜지스터들의 열화정도를 측정할 수 있는 테스트회로
US7242339B1 (en) * 2006-01-17 2007-07-10 International Business Machines Corporation Programmable reference voltage generator
CN101093400B (zh) * 2006-06-19 2011-07-06 群联电子股份有限公司 可程序的侦测调整器
WO2008001255A1 (en) 2006-06-26 2008-01-03 Nxp B.V. A constant voltage generating device
US7724564B2 (en) * 2008-05-02 2010-05-25 Micron Technology, Inc. Capacitive divider sensing of memory cells
US8564274B2 (en) * 2009-01-24 2013-10-22 Micron Technology, Inc. Reference voltage generation for single-ended communication channels

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US4527180A (en) * 1983-01-31 1985-07-02 Intel Corporation MOS Voltage divider structure suitable for higher potential feedback regulation
US4752699A (en) * 1986-12-19 1988-06-21 International Business Machines Corp. On chip multiple voltage generation using a charge pump and plural feedback sense circuits
US4874967A (en) * 1987-12-15 1989-10-17 Xicor, Inc. Low power voltage clamp circuit

Also Published As

Publication number Publication date
DE69300024T2 (de) 1995-05-11
DE69300024D1 (de) 1994-12-15
FR2688952B1 (fr) 1994-04-29
EP0562916A1 (de) 1993-09-29
US5331599A (en) 1994-07-19
FR2688952A1 (fr) 1993-09-24

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