EP0779645A2 - Plasmareaktoren zur Behandlung von Werkstücken - Google Patents

Plasmareaktoren zur Behandlung von Werkstücken Download PDF

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Publication number
EP0779645A2
EP0779645A2 EP96309031A EP96309031A EP0779645A2 EP 0779645 A2 EP0779645 A2 EP 0779645A2 EP 96309031 A EP96309031 A EP 96309031A EP 96309031 A EP96309031 A EP 96309031A EP 0779645 A2 EP0779645 A2 EP 0779645A2
Authority
EP
European Patent Office
Prior art keywords
reactor
ceiling
semiconductor
chamber
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96309031A
Other languages
English (en)
French (fr)
Other versions
EP0779645A3 (de
Inventor
Jon Mohn
Kenneth S. Collins
Mei Chang
Raymond Hung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP0779645A2 publication Critical patent/EP0779645A2/de
Publication of EP0779645A3 publication Critical patent/EP0779645A3/xx
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction

Definitions

  • the invention relates to a plasma reactor having ceiling and a workpiece support for interposition therebetween of a workpiece to be processed, such as a semiconductor wafer, wherein the processing gases are fed through the ceiling directly over the workpiece.
  • the inductively coupled plasma reactor disclosed in U.S. Patent No. 4,948,458 has a planar coil overlying the chamber ceiling and facing the semiconductor wafer being processed, thereby providing an optimally uniform RF induction field over the surface of the wafer.
  • the ceiling which seals the reactor chamber so that it can be evacuated, must be fairly transmissive to the RF induction field from the coil and is therefore a dielectric, such as quartz. It should be noted here that such a ceiling could be made from dielectric materials other than quartz, such as aluminum oxide. However other materials such as aluminum oxide tend produce greater contamination than quartz due to sputtering.
  • the concentration of free fluorine in the plasma can be controlled by introducing a scavenging article, such as silicon, near or at the top of the reactor chamber. Silicon atoms physically etched (sputtered), chemically etched or reactive ion etched from the scavenging article combine with the fluorine ions and radicals, thereby reducing fluorine ion and radical concentration in the plasma.
  • a scavenging article such as silicon
  • Silicon atoms physically etched (sputtered), chemically etched or reactive ion etched from the scavenging article combine with the fluorine ions and radicals, thereby reducing fluorine ion and radical concentration in the plasma.
  • the rate at which silicon atoms are physically or chemically etched from the scavenging article the amount of free fluorine ions and radicals in the plasma may be regulated (e.g., reduced) as desired to meet the narrow processing window mentioned above.
  • the physical or chemical etch rates can be controlled by controlling the temperature of the scavenging article and/or by controlling the rate of ion-bombardment on the scavenging article.
  • the surface of the scavenging article may be activated (to release silicon atoms into the plasma) either by RF power or by heating.
  • the polymers By holding the scavenging article's temperature below the temperature at which polymerization occurs, the polymers accumulate on the scavenging article surface and block any release therefrom of silicon atoms.
  • the surface is free from polymers, thus permitting the release of silicon atoms into the plasma.
  • the relative concentrations of free fluorine and polymer-forming ions and radicals in the plasma may be controlled by regulating the temperature of a scavenging article in the chamber.
  • the invention is embodied in a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and apparatus for coupling plasma source power into the chamber.
  • the gas inlet system includes a set of gas inlet ports through the semiconductor ceiling over the planar substrate. These gas inlet ports may be concentrated over the wafer center and/or may be distributed to overlie the wafer periphery.
  • a center gas feed top is sealed onto an exterior surface of the semiconductor ceiling, forming a gas manifold between the center gas feed top and the semiconductor window electrode, the gas manifold encompassing the gas inlet ports.
  • a semiconductor baffle extends across the manifold and dividing the manifold into a pair of sub-manifolds, one of the sub-manifolds being adjacent the center gas feed top and the other of the sub-manifolds being adjacent the gas inlet ports, and plural gas feed passages through the semiconductor baffle offset from the gas inlet ports.
  • FIG. 1 illustrates a plasma reactor embodying the invention and having a planar coil antenna overlying a center gas feed silicon ceiling having gas feed orifices extending therethrough.
  • FIGS. 2A through 2E illustrate one embodiment of a center gas feed silicon ceiling, of which FIG. 2A is a bottom perspective view of the gas feed top, FIG. 2B is a bottom perspective view of an annular seal therefor, FIG. 2C is a cross-sectional view of the seal of FIG. 2B, FIG. 2D is a top perspective view of the silicon ceiling showing the gas feed holes and FIG. 2E is a partial cross-sectional view of the silicon ceiling of FIG. 2D.
  • FIG. 3A is a cross-sectional view of another embodiment of the center gas feed silicon ceiling having a pair of gas plenums separated by a silicon wafer baffle.
  • FIG. 3B illustrates an alternative embodiment corresponding to FIG. 3A.
  • a plasma reactor includes a sealed cylindrical chamber 100 enclosed by a cylindrical side wall 105, a disk-shaped semiconductor ceiling 110 and a base 115.
  • the semiconductor ceiling 110 is formed of a semiconductor material such as silicon or silicon-containing material such as silicon carbide, or other suitable semiconductor materials that do not necessarily contain silicon. In the presently preferred embodiment the semiconductor ceiling 110 is silicon.
  • a wafer pedestal 120 supports a semiconductor wafer or workpiece 125 to be processed by the reactor.
  • the wafer pedestal 120 may be an electrostatic chuck assembly, as disclosed in co-pending U.S. Patent Application Serial No. 08/ , filed July 26, 1995 by Kenneth S. Collins et al.
  • a bias RF power generator 130 applies a bias potential to the wafer pedestal 120 through an impedance match circuit 135 of the type well-known in the art. Impedance match circuits are disclosed, for example, in U.S. Patent No. 5,392,018 to Collins et al. and U.S. Patent No. 5,187,454 to Collins et al. Gas inlets 137 through the silicon ceiling 110 admit a processing gas such as an etchant precursor gas such as a C X F X gas. A vacuum pump 140 evacuates the chamber 100 to a desired pressure. An overhead inductive coil antenna 145 held over the ceiling 110 in an insulating antenna holder 147 is connected to a plasma source RF power generator 150 through another conventional impedance match circuit 155 and inductively couples RF power into the chamber through the ceiling 110.
  • One advantage of the plasma reactor of FIG. 1 is the even distribution across the entire wafer surface of the process gas from the gas inlet holes 137 through the ceiling 110. Another advantage is that the material that may be sputtered from the silicon ceiling 110 is not incompatible with a silicon dioxide etch process. A related advantage is that the material sputtered from the silicon ceiling is a scavenger for fluorine. A further advantage is that the silicon ceiling can have a thermal coefficient of expansion compatible with that of other structural members of the chamber consisting of silicon.
  • the 1-inch thick silicon ceiling 110 has an approximately 0.33-inch deep 3.5-inch diameter counterbored opening 900 in its top surface.
  • about twenty-two symmetrically placed 0.20-inch diameter holes 910 are drilled down from the top surface of the counterbore opening 900 through about 80% of the thickness of the ceiling 110.
  • Small 0.030-inch diameter holes 920 concentric with the larger holes 910 are laser-drilled and/or ultrasonically drilled from the bottom surface of the silicon ceiling 110.
  • a disk-shaped gas feed top 930 fits snugly within the counterbore opening 900 in the top surface of the silicon ceiling 110.
  • the bottom surface of the gas feed top 930 has an approximately 0.01-inch deep 3.3-inch diameter counterbore opening 940 therein which forms a gas distribution manifold.
  • a center gas feed pipe 950 passes through the center of the gas feed top 930 and opens into the counterbore opening 940.
  • the bottom peripheral corner of the gas feed top has a step 960 cut out therein, the step 960 being 0.143-inch deep and extending 0.075-inch radially inwardly.
  • the step 960 creates a circumferential pocket into which an annular teflon seal 970 having dimensions matching those of the step 960 snugly fits.
  • the teflon seal 970 has a U-shaped cross-section, as illustrated in FIG. 2C.
  • An annular steel wire stiffener 975 within the teflcn seal 970 provides stiffness for the seal 970.
  • the advantage is that the reactor's center-to-edge etch uniformity is enhanced by the uniform etchant precursor gas distribution across the wafer surface achieved with the center gas feed silicon ceiling 110 of FIGS. 2A-E
  • FIG. 3A illustrates another preferred embodiment of the center gas feed silicon ceiling which better protects the gas feed top from the plasma.
  • a shoulder 980 is provided along the circumferential edge of the counterbore opening 900 in the silicon ceiling 110.
  • a silicon wafer 985 rests on the shoulder 980 and separates into two separate chambers the counterbore opening 900 in the top of the silicon ceiling 110 and the counterbore opening 940 in the bottom of the gas feed top 930.
  • the silicon wafer 985 has plural gas feed holes 986 drilled therethrough which are all laterally displaced from the gas feed holes 910 in the silicon ceiling 110.
  • the interposition of the silicon wafer 985 in this manner eliminates any direct-line path to the gas feed top 930 for plasma ions diffusing upwardly from the chamber through the holes 920. This feature better protects the top 930 from attack by the plasma.
  • the top 930 is either a material such as a semiconductor or a dielectric which does not appreciably attenuate the RF inductive field, or, if its diameter is less than the diameter of the center null of the inductive antenna, may be a conductor such as stainless steel.
  • the gas feed holes 910, 920 are grouped about the center of the ceiling 110.
  • the holes 910, 920 may be distributed from the center out to the periphery, if desired, or may be grouped about the periphery instead of the center. This is illustrated in FIG. 3B, in which the gas feed holes 910, 920 are distributed about the periphery of the ceiling 110.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
EP96309031A 1995-12-12 1996-12-11 Plasmareaktoren zur Behandlung von Werkstücken Withdrawn EP0779645A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57076495A 1995-12-12 1995-12-12
US570764 1995-12-12

Publications (2)

Publication Number Publication Date
EP0779645A2 true EP0779645A2 (de) 1997-06-18
EP0779645A3 EP0779645A3 (de) 1997-09-17

Family

ID=24280972

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96309031A Withdrawn EP0779645A2 (de) 1995-12-12 1996-12-11 Plasmareaktoren zur Behandlung von Werkstücken

Country Status (4)

Country Link
US (2) US6027606A (de)
EP (1) EP0779645A2 (de)
JP (1) JPH09180897A (de)
KR (1) KR970052615A (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0908923A2 (de) * 1997-10-10 1999-04-14 European Community Verfahren und Vorrichtung zur Erzeugung eines ausgedehnten Induktionsplasmas für Plasmabehandlungen
DE19727857C1 (de) * 1997-06-30 1999-04-29 Fraunhofer Ges Forschung Plasmarektor mit Prallströmung zur Oberflächenbehandlung
WO2001022479A1 (en) * 1999-09-23 2001-03-29 Lam Research Corporation Gas distribution apparatus for semiconductor processing
EP1089319A1 (de) * 1999-09-29 2001-04-04 European Community (EC) Gleichmässige Gasverteilung in einer grossflächige Plasma-Behandlungs-Vorrichtung
WO2003087427A2 (en) * 2002-04-08 2003-10-23 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
RU2529633C1 (ru) * 2013-03-27 2014-09-27 Общество с ограниченной ответственностью "ЭСТО-Вакуум" Устройство для плазмохимического травления

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
JP3367077B2 (ja) * 1997-10-21 2003-01-14 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置
JP2972707B1 (ja) 1998-02-26 1999-11-08 松下電子工業株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP2000068255A (ja) * 1998-08-21 2000-03-03 Tokyo Electron Ltd プラズマ用電極およびその製造方法
JP4044218B2 (ja) * 1998-08-28 2008-02-06 松下電器産業株式会社 プラズマ処理装置
US6221202B1 (en) * 1999-04-01 2001-04-24 International Business Machines Corporation Efficient plasma containment structure
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
EP1300876A4 (de) * 2001-03-28 2005-12-07 Tadahiro Ohmi Plasmaverarbeitungseinrichtung
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
US20070079936A1 (en) * 2005-09-29 2007-04-12 Applied Materials, Inc. Bonded multi-layer RF window
US8216374B2 (en) * 2005-12-22 2012-07-10 Applied Materials, Inc. Gas coupler for substrate processing chamber
JP5257917B2 (ja) * 2006-04-24 2013-08-07 株式会社ニューパワープラズマ 多重マグネチックコアが結合された誘導結合プラズマ反応器
JP4904202B2 (ja) * 2006-05-22 2012-03-28 ジーイーエヌ カンパニー リミッテッド プラズマ反応器
JP2008311297A (ja) * 2007-06-12 2008-12-25 Mitsubishi Materials Corp プラズマ処理装置用電極板、その製造方法及びプラズマ処理装置
US8377213B2 (en) * 2008-05-05 2013-02-19 Applied Materials, Inc. Slit valve having increased flow uniformity
JP5457109B2 (ja) 2009-09-02 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置
CN111029254B (zh) * 2019-12-26 2023-03-21 苏州科阳光电科技有限公司 一种干法刻蚀方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5187454A (en) 1992-01-23 1993-02-16 Applied Materials, Inc. Electronically tuned matching network using predictor-corrector control system
US5392018A (en) 1991-06-27 1995-02-21 Applied Materials, Inc. Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits

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GB8905075D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Electrode assembly and apparatus
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5449410A (en) * 1993-07-28 1995-09-12 Applied Materials, Inc. Plasma processing apparatus
GB9321489D0 (en) * 1993-10-19 1993-12-08 Central Research Lab Ltd Plasma processing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5392018A (en) 1991-06-27 1995-02-21 Applied Materials, Inc. Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits
US5187454A (en) 1992-01-23 1993-02-16 Applied Materials, Inc. Electronically tuned matching network using predictor-corrector control system

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19727857C1 (de) * 1997-06-30 1999-04-29 Fraunhofer Ges Forschung Plasmarektor mit Prallströmung zur Oberflächenbehandlung
US6321681B1 (en) 1997-10-10 2001-11-27 European Community (Ec) Method and apparatus to produce large inductive plasma for plasma processing
EP0908923A2 (de) * 1997-10-10 1999-04-14 European Community Verfahren und Vorrichtung zur Erzeugung eines ausgedehnten Induktionsplasmas für Plasmabehandlungen
EP0908923A3 (de) * 1997-10-10 1999-06-30 European Community Verfahren und Vorrichtung zur Erzeugung eines ausgedehnten Induktionsplasmas für Plasmabehandlungen
WO1999019898A3 (en) * 1997-10-10 1999-08-05 European Community Method and apparatus to produce large inductive plasma for plasma processing
WO1999019898A2 (en) * 1997-10-10 1999-04-22 European Community (Ec) Method and apparatus to produce large inductive plasma for plasma processing
WO2001022479A1 (en) * 1999-09-23 2001-03-29 Lam Research Corporation Gas distribution apparatus for semiconductor processing
DE10083204B3 (de) * 1999-09-23 2012-10-18 Lam Research Corp. Plasmaprozesskammer und Bearbeitungsverfahren darin
US6451157B1 (en) 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
WO2001024220A3 (en) * 1999-09-29 2001-06-21 European Community Uniform gas distribution in large area plasma treatment device
WO2001024220A2 (en) * 1999-09-29 2001-04-05 European Community (Ec) Uniform gas distribution in large area plasma treatment device
EP1089319A1 (de) * 1999-09-29 2001-04-04 European Community (EC) Gleichmässige Gasverteilung in einer grossflächige Plasma-Behandlungs-Vorrichtung
WO2003087427A2 (en) * 2002-04-08 2003-10-23 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
WO2003087427A3 (en) * 2002-04-08 2004-04-01 Applied Materials Inc Laser drilled surfaces for substrate processing chambers
RU2529633C1 (ru) * 2013-03-27 2014-09-27 Общество с ограниченной ответственностью "ЭСТО-Вакуум" Устройство для плазмохимического травления

Also Published As

Publication number Publication date
EP0779645A3 (de) 1997-09-17
US6027606A (en) 2000-02-22
JPH09180897A (ja) 1997-07-11
US6193836B1 (en) 2001-02-27
KR970052615A (ko) 1997-07-29

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