EP0769350A1 - Procédé et dispositif pour dresser un tissu de polissage - Google Patents

Procédé et dispositif pour dresser un tissu de polissage Download PDF

Info

Publication number
EP0769350A1
EP0769350A1 EP96116818A EP96116818A EP0769350A1 EP 0769350 A1 EP0769350 A1 EP 0769350A1 EP 96116818 A EP96116818 A EP 96116818A EP 96116818 A EP96116818 A EP 96116818A EP 0769350 A1 EP0769350 A1 EP 0769350A1
Authority
EP
European Patent Office
Prior art keywords
dresser
polishing cloth
polishing
dressing
turntable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96116818A
Other languages
German (de)
English (en)
Inventor
Norio Kimura
Katsuyuki Aoki
Kunio Tateishi
Hozumi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of EP0769350A1 publication Critical patent/EP0769350A1/fr
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Definitions

  • the present invention relates to a method and apparatus for dressing a polishing cloth, and more particularly to a method and apparatus for dressing a polishing cloth for restoring polishing capability of the polishing cloth to thereby polish a semiconductor wafer to a flat mirror finish.
  • a polishing apparatus has a turntable and a top ring which rotate at respective individual speeds.
  • a polishing cloth is attached to the upper surface of the turntable.
  • a semiconductor wafer to be polished is placed on the polishing cloth and clamped between the top ring and the turntable.
  • An abrasive liquid containing abrasive grains is supplied onto the polishing cloth and retained on the abrasive cloth.
  • the top ring exerts a certain pressure on the turntable, and the surface of the semiconductor wafer held against the polishing cloth is therefore polished to a flat mirror finish while the top ring and the turntable are rotating.
  • a nonwoven fabric cloth is often used as a polishing cloth for polishing the semiconductor wafer having a device pattern thereon.
  • the polishing cloth is processed to recover its original polishing capability.
  • Various processes have been and are being developed for restoring the polishing cloth, and are collectively called "dressing".
  • the polishing cloth is dressed in order to enable the polishing apparatus to perform a good polishing function at all times without undesired degradation of a polishing performance.
  • a nylon brush is generally used for dressing the polishing cloth to restore its polishing capability.
  • a polishing amount per unit time corresponding to a polishing rate i.e. the amount of a material removed from the workpiece per unit time tends to be decreased in each polishing process, as shown in FIG. 14.
  • the horizontal axis represents the number of semiconductor wafers which have been polished, and the vertical axis represents a polishing rate ( ⁇ /min).
  • the polishing cloth was dressed by the dresser made of nylon brush after each polishing process, the polishing rate was rapidly lowered after polishing several semiconductor wafers.
  • the polishing amount per unit time is decreased depending on a polishing time unless an appropriate size of diamond grains is used to form the proper surface roughness of the polishing cloth, as shown in FIG. 15.
  • the horizontal axis represent a size of the diamond grains according to Japanese Industrial Standard JISB4130 and JISB4131 defining a grain size of diamond and cubic crystal of boron nitride
  • the vertical axis represents a polishing rate ( ⁇ /min) and a polishing amount ( ⁇ ).
  • the polishing cloth When the polishing cloth is dressed by the diamond dresser, the polishing cloth is slightly scraped off. Unless the polishing cloth is linearly scraped off in any vertical cross section, i.e. is linearly scraped off in a radial direction of the polishing cloth, the semiconductor wafer which is a workpiece to be polished cannot be uniformly polished as the number of dressing processes increases.
  • a method of dressing a polishing cloth mounted on a turntable comprising the steps of: providing a dresser comprising a dresser body and an annular diamond grain layer provided on the dresser body, the annular diamond grain layer being made of diamond grains which are electrodeposited; and dressing the polishing cloth by pressing the annular diamond grain layer against the polishing cloth while the turntable and the dresser are rotating.
  • an apparatus for dressing a polishing cloth mounted on a turntable comprising: a dresser comprising a dresser body and an annular diamond grain layer provided on the dresser body, the annular diamond grain layer being made of diamond grains which are electrodeposited; a first actuator for rotating the dresser about a central axis of the dresser; and a second actuator for pressing the annular diamond grain layer of the dresser against the polishing cloth.
  • the surface of the polishing cloth is linearly scraped off in any vertical cross section thereof, and the surface roughness of the polishing cloth which suffers the degradation of the polishing performance can be restored to a good polishing condition.
  • a method of dressing a polishing cloth mounted on a turntable comprising the steps of: providing a dresser comprising a dresser body and a SiC layer provided on the dresser body; and dressing the polishing cloth by pressing the SiC layer against the polishing cloth while the turntable and the dresser are rotating.
  • an apparatus for dressing a polishing cloth mounted on a turntable comprising: a dresser comprising a dresser body and a SiC layer provided on the dresser body; a first actuator for rotating the dresser about a central axis of the dresser; and a second actuator for pressing the dresser against the polishing cloth.
  • the surface of the polishing cloth is linearly scraped off in any vertical cross section thereof, and the surface roughness of the polishing cloth which suffers the degradation of the polishing performance can be restored to a good polishing condition.
  • the dresser has the SiC layer, a thickness of material removed from the polishing cloth is minimized by the dressing process.
  • the polishing cloth by the dresser having diamond grains the diamond grains fall off from the dresser, and the semiconductor wafer may possibly be scratched or damaged in the polishing process by the diamond grains which have fallen off from the dresser during the dressing process.
  • the SiC layer of the dresser is not eroded by the acidic abrasive liquid.
  • FIGS. 1 through 7 A dressing apparatus according to a first embodiment of the present invention will be described below with reference to FIGS. 1 through 7.
  • a dressing apparatus is installed in a polishing apparatus in FIG. 1.
  • the polishing apparatus comprises a turntable 1, and a top ring 3 positioned above the turntable 1 for holding a semiconductor wafer 2 against the turntable 1.
  • the top ring 3 is located in an off-center position with respect to the turntable 1.
  • the turntable 1 is rotatable about its own axis as indicated by the arrow A by a motor (not shown) which is coupled through a shaft 1a to the turntable 1.
  • a polishing cloth 4 is attached to an upper surface of the turntable 1.
  • the top ring 3 is coupled to a motor (not shown) and also to a lifting/lowering cylinder (not shown).
  • the top ring 3 is vertically movable and rotatable about its own axis as indicated by the arrows B, C by the motor and the lifting/lowering cylinder.
  • the top ring 3 can therefore press the semiconductor wafer 2 against the polishing cloth 4 under a desired pressure.
  • the semiconductor wafer 2 is attached to a lower surface of the top ring 3 under a vacuum or the like.
  • a guide ring 6 is mounted on the outer circumferential edge of the lower surface of the top ring 3 for preventing the semiconductor wafer 2 from being disengaged from the top ring 3.
  • An abrasive liquid supply nozzle 5 is disposed above the turntable 1 for supplying an abrasive liquid onto the polishing cloth 4 attached to the turntable 1.
  • a dressing apparatus comprises a dressing head 8 which is positioned above the turntable 1 in diametrically opposite relation to the top ring 3.
  • the polishing cloth 4 is supplied with a dressing liquid such as water from a dressing liquid supply nozzle 9 extending over the turntable 1.
  • the dressing head 8 is coupled to a motor 15 and also to a lifting/lowering cylinder 16.
  • the dressing head 8 is vertically movable and rotatable about its own axis as indicated by the arrows D, E by the motor 15 and the lifting/lowering cylinder 16.
  • the dressing head 8 is of a disk shape having a certain diameter, and holds a dresser 10 on its lower surface.
  • the lower surface of the dressing head 8, to which the dresser 10 is attached, has holes (not shown) defined therein which are connected to a vacuum source for attaching the dresser 10 under vacuum to the lower surface of the dressing head 8.
  • the dresser 10 may be also attached to the dressing head 8 by bolts or the like.
  • the dressing head 8 can be oscillated so that the dressing head 8 is movable in a radial direction of the polishing cloth 4.
  • the motor 15 constitutes a first actuator for rotating the dresser 10 about a central axis thereof, and the lifting/lowering cylinder 16 constitutes a second actuator for pressing the dresser 10 against the polishing cloth 4.
  • the abrasive liquid supply nozzle 5 and the dressing liquid supply nozzle 9 extend to a region near the central axis of the turntable 1 above the upper surface thereof for supplying an abrasive liquid and a dressing liquid such as water, respectively, to the polishing cloth 4 at a predetermined position thereon.
  • the polishing apparatus operates as follows: The semiconductor wafer 2 is held on the lower surface of the top ring 3, and pressed against the polishing cloth 4 on the upper surface of the turntable 1. The turntable 1 and the top ring 3 are rotated relatively to each other for thereby bringing the lower surface of the semiconductor wafer 2 in sliding contact with the polishing cloth 4. At this time, the abrasive liquid nozzle 5 supplies the abrasive liquid to the polishing cloth 4. The lower surface of the semiconductor wafer 2 is now polished by a combination of a mechanical polishing action of abrasive grains in the abrasive liquid and a chemical polishing action of an alkaline solution in the abrasive liquid.
  • the polishing process comes to an end when the semiconductor wafer 2 is polished by a predetermined thickness of a surface layer thereof.
  • the polishing properties of the polishing cloth 4 is changed and the polishing performance of the polishing cloth 4 deteriorates. Therefore, the polishing cloth 4 is dressed to restore its polishing properties.
  • an apparatus for dressing a polishing cloth has a dresser 10, which is attached to the dressing head 8, shown in FIGS. 2A through 2C.
  • FIG. 2A is a bottom view of the dresser 10
  • FIG. 2B is a cross-sectional view taken along the line A-A of FIG. 2A
  • FIG. 2C is an enlarged view showing a portion B of FIG. 2B.
  • the dresser 10 comprises a dresser body 11 of a circular plate, an annular projecting portion 12 which projects from an outer circumferential portion of the dresser body 11, and an annular diamond grain layer 13 on the annular projecting portion 12.
  • the annular diamond grain layer 13 is made of diamond grains which are electrodeposited on the annular projecting portion 12. The diamond grains are deposited on the annular projecting portion 12 by nickel plating.
  • the dresser 10 is as follows.
  • the dresser body 11 has a diameter of 250 mm.
  • the annular diamond grain layer 13 having a width of 6 mm is formed on the circumferential area of the lower surface of the dresser body 11.
  • the annular diamond grain layer 13 comprises a plurality of sectors (eight in this embodiment).
  • the polishing cloth is dressed by the dresser in a manner shown in FIG. 3.
  • the polishing cloth 4 made of polyurethane foam to be dressed is attached to the upper surface of the turntable 1 which rotates in a direction indicated by the arrow A.
  • the dresser 10 which rotates in a direction indicated by the arrow B is pressed against the polishing cloth so that the annular diamond grain layer 13 is brought in contact with the polishing cloth 4.
  • the turntable 1 and the dresser 10 are rotated relatively to each other for thereby bringing the lower surface of the diamond grain layer 13 in sliding contact with the polishing cloth 4.
  • FIG. 4 is a graph showing a scratch length of the dresser of the present invention. The amount of a material removed from the polishing cloth by dressing, which is carried out with the dresser, depends on the scratch length.
  • the scratch length is defined, per a certain small area of the polishing cloth, as the total length which is the product of the relative speed between said area and each point of the surface of the dresser and the dressing time during which said area and the dresser contact to each other. That is, the scratch length is defined as the length in which said area is scratched by the dresser.
  • the scratch lengths differ with the distance from the center of the rotation of the polishing cloth mounted on the turntable to said area. In the case where the effective area of the dresser is disk-shaped, the scratch length has the following feature.
  • the scratch length is relatively long. In the area of the polishing cloth which is located in the same distance from the center of the polishing cloth as the distance between the center of the dresser and the center of the polishing cloth, the scratch length is relatively short. This is because the arc length of the dresser at a radial position from the center of the polishing cloth differs with the radial position from the center of the polishing cloth.
  • the amount of a material removed from the polishing cloth by dressing with the dresser is proportional to the scratch length. Therefore, in case of using a disk-shaped dresser, the polishing cloth is scratched excessively at the location of the same distance as the distance between the center of the dresser and the center of the polishing cloth, and the cross-sectional view of the dressed area of the polishing cloth has a recess, the depth of which is deeper as the location in the recess is nearer to the center of the recess.
  • the effective area of the dresser is arranged to be annular. That is, the diamond grain layer 13 is annular.
  • the effective area of the inner portion of the dresser By reducing the effective area of the inner portion of the dresser, the amount of a material removed from the polishing cloth by dressing is decreased at the inner area of said recess, and the irregularity of the depth of said recess is improved. Thus, the flatness of the surface of the dressed area of the polishing cloth is improved, and more effective dressing is obtained.
  • the horizontal axis represents a radial position on the polishing cloth (mm), and the vertical axis represents a scratch length (mm) of the dresser 10.
  • the curve A represents the relationship between scratch lengths and radial positions on the polishing cloth when the polishing cloth was dressed by the dresser 10 which has the annular diamond grain layer 13 on the dresser body 11, and the curve B represents the relationship between scratch lengths and radial positions on the polishing cloth when the polishing cloth was dressed by the dresser which has a circular diamond grain layer which is formed by electrodepositing diamond grains on the entire lower surface of a circular plate.
  • the upper surface of the polishing cloth was substantially uniformly contacted by the diamond grain layer 13, and was linearly scraped off in any vertical cross section.
  • the dressing length L1 represents a polishing range of an 8-inch wafer which is not oscillated during polishing process
  • the dressing length L2 represents a polishing range of a 6-inch wafer which is not oscillated during polishing process.
  • FIG. 5 is a graph showing a contour of the polishing cloth which has been dressed by the dresser 10 of the present invention.
  • a 6-inch semiconductor wafer was polished by pressing the semiconductor wafer against the polishing cloth by the top ring 3 shown in FIG. 1 at a pressure of 400 gf/cm 2 for 176 minutes and 30 seconds.
  • the polishing cloth was dressed by the dresser 10 of the present invention by pressing the dresser 10 against the polishing cloth 4 at a pressure of 57 gf/cm 2 for 43 minutes and 49 seconds.
  • the horizontal axis represents a radial position of the polishing cloth
  • the vertical axis represents a thickness of the polishing cloth.
  • Ld represents a region over which the dresser contacts the polishing cloth
  • Lt represents a region over which the top ring is movable.
  • FIG. 5 shows that the polishing cloth is linearly scraped off in any vertical cross section by the dressing process.
  • the center of the top ring is located at the radial position of 170 mm during polishing process.
  • the annular dressing area of the dresser is formed in such a manner that the inner diameter of the annular dressing area is larger than the diameter of the workpiece by the following reason.
  • the scratch length of the polishing cloth by dressing with said dresser changes irregularly at the circular positions where the distance of the area from the center of the polishing cloth is the same as the shortest distance between the inner edge of the annular dressing area of the dresser and the center of the polishing cloth or the same as the longest distance between the inner edge of the annular dressing area of the dresser and the center of the polishing cloth. That is, at said circular positions, the scratch length has improper values.
  • the annular dressing area of the dresser is formed in such a manner that the inner diameter of the annular dressing area of the dresser is larger than the diameter of the workpiece.
  • FIGS. 6A through 6C show a surface roughness of the polishing cloth.
  • the horizontal axis represents a radial position of the polishing cloth
  • the vertical axis represents a surface roughness of the polishing cloth.
  • FIG. 6A shows an unused polishing cloth
  • FIG. 6B shows the polishing cloth which has been dressed by the dresser of the present invention
  • FIG. 6C shows the polishing cloth after polishing semiconductor wafers.
  • the surface roughness of the polishing cloth was substantially restored to the unused state by the dressing process of the present invention.
  • the sizes of the diamond grains in the annular diamond grain layer 13 were in the range of 10 to 25 ⁇ m.
  • the observation of the surface roughness of the polishing cloth before and after the dressing process proved that when the surface roughness of the polishing cloth was maintained in the range of 10 to 40 ⁇ m, good polishing results were obtained.
  • FIG. 7 shows a polishing rate of an oxide layer formed on the semiconductor wafer which have been polished by the polishing cloth.
  • the polishing cloth has been dressed by the dresser of the present invention after each polishing process.
  • the horizontal axis represents the number of semiconductor wafers which have been polished
  • the vertical axis represents a polishing rate ( ⁇ /min.) and a uniformity across the wafer (standard deviation %).
  • the polishing rate ( ⁇ /min.) is an average of 2250, a maximum of 2290 and a minimum of 2210.
  • the standard deviation (%) is an average of 4.0, a maximum of 4.7 and a minimum of 3.0.
  • the surface of the polishing cloth is linearly scraped off in any vertical cross section thereof, and the surface roughness of the polishing cloth which suffers the degradation of the polishing performance can be restored to a good polishing condition.
  • FIGS. 8A through 8C shows a dresser according to a second embodiment of the present invention.
  • FIG. 8A is a perspective bottom view of the dresser
  • FIG. 8B is a bottom view of the dresser
  • FIG. 8C is a cross-sectional view taken along the line A-A of FIG. 8B.
  • the dresser 20 comprises a dresser body 21, and an annular SiC (silicon carbide) layer 22 provided on a circumferential portion of the dresser body 21.
  • the SiC layer 22 comprises a plurality of SiC sectors 22a (eight in this embodiment) having a circular arc shape.
  • the SiC layer 22 is fixed to the lower surface of the dresser body 21 by an adhesive 23 made of epoxy resin, as shown in FIG. 9 which is an enlarged view showing the section B of FIG. 8C.
  • the dresser body 21 is made of stainless steel in this embodiment.
  • the SiC sector 22a has a plurality of projections 22b arranged in equal intervals and a lattice of grooves 22c on its surface, as shown in FIGS. 10A and 10B.
  • the projection 22b is in the form of a quadrangular pyramid.
  • FIG. 10A is a fragmentary enlarged plan view of the SiC sector 22a
  • FIG. 10B is a cross-sectional view taken along the line C-C of FIG. 10A.
  • the dresser body 21 has a diameter of 248 mm
  • the SiC layer 22 has a width of 6 mm.
  • the projection 22b has a height h ranging from 60 to 65 ⁇ m, the pitch p between the two projections 22b is 300 ⁇ m, and the width w of the groove 22c is 100 ⁇ m.
  • the polishing cloth is dressed by the dresser in a manner as shown in FIG. 3.
  • the polishing cloth made of polyurethane foam to be dressed is attached to the upper surface of the turntable 1 which rotates in a direction indicated by the arrow A.
  • the dresser 20 which rotates in a direction indicated by the arrow B is pressed against the polishing cloth so that the SiC layer 22 is brought into contact with the polishing cloth 4.
  • the turntable 1 and the dresser 20 are rotated relatively to each other for thereby bringing the lower surface of the SiC layer 22 in sliding contact the polishing cloth 4.
  • FIG. 11 is a graph showing a scratch length of the dresser 20 of the present invention.
  • the horizontal axis represents a radial position on the polishing cloth (mm)
  • the vertical axis represents a scratch length (mm) of the dresser.
  • the curve A represents the relationship between scratch lengths and radial positions on the polishing cloth when the polishing cloth was dressed by the dresser 20 which has the annular SiC layer 22 on the dresser body 21, and the curve B represents the relationship between scratch lengths and radial positions on the polishing cloth when the polishing cloth was dressed by the dresser which has a circular diamond grain layer which is formed by electrodepositing diamond grains on the entire lower surface of a circular plate. As shown in FIG.
  • the upper surface of the polishing cloth was substantially uniformly contacted by the SiC layer 22, and was linearly scraped off in any vertical cross section. This means that the scratch lengths are substantially uniform at all radial positions of the polishing cloth in a radial direction of the polishing cloth.
  • the dressing length L1 represents a polishing range of an 8-inch wafer which is not oscillated during polishing process
  • the dressing length L2 represents a polishing range of a 6-inch wafer which is not oscillated during polishing process.
  • FIG. 12 is a graph showing a contour of the polishing cloth which has been dressed by the dresser 20 of the present invention.
  • the horizontal axis represents a radial position (mm) of the polishing cloth
  • the vertical axis represents a thickness (mm) of the polishing cloth.
  • Ld represents a region over which the dresser contacts the polishing cloth.
  • the polishing cloth was dressed by the dresser 20 of the present invention by pressing the dresser 20 against the polishing cloth at a pressure of 450 gf/cm 2 for 300 seconds in each dressing process, and the dressing process was repeated 20 times. Thus, the total dressing time was 6000 seconds.
  • a maximum thickness of material removed from the polishing cloth was as little as 0.007 mm, and the polishing cloth is radially linearly scraped off by the dressing process.
  • FIG. 13 shows a polishing rate of an oxide layer formed on the semiconductor wafer which has been polished by the polishing cloth.
  • the polishing cloth has been dressed by the dresser of the present invention.
  • the line A shows a polishing rate of a polishing cloth which has been dressed by the dresser 20 of the second embodiment in FIG. 8
  • the line B shows a polishing rate of the polishing cloth which has been dressed by the dresser 10 of the first embodiment in FIG. 2.
  • the horizontal axis represents a polishing time performed by the polishing cloth
  • the vertical axis represents a thickness ( ⁇ ) of material removed from the semiconductor wafer.
  • the polishing cloth which has been dressed by the dresser 20 of the second embodiment has substantially the same polishing capability as the polishing cloth which has been dressed by the dresser 10 of the first embodiment.
  • the rotational speeds of the turntable and the dresser were 13 rpm, and the dressing time was 17 seconds.
  • the surface of the polishing cloth is linearly scraped off in any vertical cross section thereof, and the surface roughness of the polishing cloth which suffers the degradation of the polishing performance can be restored to a good polishing condition.
  • the dresser since the dresser has the SiC layer, a thickness of material removed from the polishing cloth is minimized by the dressing process.
  • the diamond grains fall off from the dresser, and the semiconductor wafer may possibly be scratched or damaged in the polishing process by the diamond grains which have fallen off from the dresser during the dressing process.
  • the polishing cloth by the dresser having a SiC layer there is no fear of scratches or damages on the semiconductor wafer. Further, even if acidic abrasive liquid is used, the SiC layer of the dresser is not eroded by the acidic abrasive liquid.
  • annular diamond grain layer and the annular SiC layer have a circular outer shape and a circular inner shape, respectively, they may have an elliptical outer shape and an elliptical inner shape, respectively, or a circular outer shape and a heart-shaped inner shape, or any other shapes.
EP96116818A 1995-10-19 1996-10-18 Procédé et dispositif pour dresser un tissu de polissage Withdrawn EP0769350A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP296107/95 1995-10-19
JP296108/95 1995-10-19
JP29610795 1995-10-19
JP29610895 1995-10-19

Publications (1)

Publication Number Publication Date
EP0769350A1 true EP0769350A1 (fr) 1997-04-23

Family

ID=26560533

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96116818A Withdrawn EP0769350A1 (fr) 1995-10-19 1996-10-18 Procédé et dispositif pour dresser un tissu de polissage

Country Status (2)

Country Link
EP (1) EP0769350A1 (fr)
KR (1) KR970023800A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999011431A1 (fr) * 1997-08-29 1999-03-11 Infineon Technologies Ag Procede et dispositif pour traiter des tampons de polissage, notamment des tissus de polissage
EP1197296A2 (fr) * 2000-10-05 2002-04-17 Applied Materials, Inc. Disque de dressage pour tampons de polissage
WO2004077520A2 (fr) * 2003-02-25 2004-09-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Procedes et appareil utilisant des tampons de polissage
US9802293B1 (en) 2016-09-29 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method to shape the surface of chemical mechanical polishing pads

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6368360A (ja) * 1986-09-08 1988-03-28 Sumitomo Electric Ind Ltd 半導体ウエ−ハの研磨方法
GB2287422A (en) * 1994-03-16 1995-09-20 Nec Corp Conditioning by abrading of polishing cloth for semiconductor devices
US5486131A (en) * 1994-01-04 1996-01-23 Speedfam Corporation Device for conditioning polishing pads
US5531635A (en) * 1994-03-23 1996-07-02 Mitsubishi Materials Corporation Truing apparatus for wafer polishing pad

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6368360A (ja) * 1986-09-08 1988-03-28 Sumitomo Electric Ind Ltd 半導体ウエ−ハの研磨方法
US5486131A (en) * 1994-01-04 1996-01-23 Speedfam Corporation Device for conditioning polishing pads
GB2287422A (en) * 1994-03-16 1995-09-20 Nec Corp Conditioning by abrading of polishing cloth for semiconductor devices
US5531635A (en) * 1994-03-23 1996-07-02 Mitsubishi Materials Corporation Truing apparatus for wafer polishing pad

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 012, no. 292 (M - 729) 10 August 1988 (1988-08-10) *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999011431A1 (fr) * 1997-08-29 1999-03-11 Infineon Technologies Ag Procede et dispositif pour traiter des tampons de polissage, notamment des tissus de polissage
EP1197296A2 (fr) * 2000-10-05 2002-04-17 Applied Materials, Inc. Disque de dressage pour tampons de polissage
EP1197296A3 (fr) * 2000-10-05 2003-12-17 Applied Materials, Inc. Disque de dressage pour tampons de polissage
WO2004077520A2 (fr) * 2003-02-25 2004-09-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Procedes et appareil utilisant des tampons de polissage
WO2004077520A3 (fr) * 2003-02-25 2004-10-14 Rohm & Haas Elect Mat Procedes et appareil utilisant des tampons de polissage
US6899612B2 (en) 2003-02-25 2005-05-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad apparatus and methods
US9802293B1 (en) 2016-09-29 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method to shape the surface of chemical mechanical polishing pads
TWI728188B (zh) * 2016-09-29 2021-05-21 美商羅門哈斯電子材料Ｃｍｐ控股公司 使化學機械拋光墊之表面成形之方法

Also Published As

Publication number Publication date
KR970023800A (ko) 1997-05-30

Similar Documents

Publication Publication Date Title
US6354918B1 (en) Apparatus and method for polishing workpiece
KR100801371B1 (ko) 화학 기계적 연마 장치에 사용하기 위한 홈 패턴을 가지는연마 패드
US6325709B1 (en) Rounded surface for the pad conditioner using high temperature brazing
EP0816017B1 (fr) Procédé et dispositif de dressage d'une toile de polissage
US6193587B1 (en) Apparatus and method for cleansing a polishing pad
EP0874390B1 (fr) Procede de polissage
EP0754525B1 (fr) Procédé et dispositif pour dresser un tissu de polissage
US6409580B1 (en) Rigid polishing pad conditioner for chemical mechanical polishing tool
US6022266A (en) In-situ pad conditioning process for CMP
EP1066133B1 (fr) Instrument de polissage
US6152806A (en) Concentric platens
US6547651B1 (en) Subaperture chemical mechanical planarization with polishing pad conditioning
US6302770B1 (en) In-situ pad conditioning for CMP polisher
WO2001027350A1 (fr) Decalage, dimensions et forme optimales d'un tampon destine au polissage et a l'aplanissement chimico-mecanique
EP0769350A1 (fr) Procédé et dispositif pour dresser un tissu de polissage
EP1157783B1 (fr) Procédé et dispositif de polissage
EP0806267A1 (fr) Patin de polissage haché pour polir un substrat dans un système de polissage chemico-mécanique
JP3818798B2 (ja) ポリッシング装置及び方法
WO2000047369A1 (fr) Procede de polissage de plaquettes semi-conductrices
EP1125688A1 (fr) Dispositif de polissage et procede de fabrication de semi-conducteurs au moyen dudit dispositif
US7166013B2 (en) Polishing apparatus and method for producing semiconductors using the apparatus
WO1998012020A1 (fr) Procedes et dispositif destines au polissage uniforme d'une piece a usiner
JP3646430B2 (ja) 化学的機械研磨方法及び化学的機械研磨装置
KR100436825B1 (ko) 연마장치 및 그 장치를 사용한 반도체제조방법
EP1308243B1 (fr) Procédé de polissage

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR

17P Request for examination filed

Effective date: 19971017

17Q First examination report despatched

Effective date: 19990517

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 19991130