EP0763260A1 - Cellule solaire a couche mince et son procede de fabrication - Google Patents

Cellule solaire a couche mince et son procede de fabrication

Info

Publication number
EP0763260A1
EP0763260A1 EP95920751A EP95920751A EP0763260A1 EP 0763260 A1 EP0763260 A1 EP 0763260A1 EP 95920751 A EP95920751 A EP 95920751A EP 95920751 A EP95920751 A EP 95920751A EP 0763260 A1 EP0763260 A1 EP 0763260A1
Authority
EP
European Patent Office
Prior art keywords
layer
buffer
solar cell
layers
film solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP95920751A
Other languages
German (de)
English (en)
Inventor
Claus Beneking
Bernd Rech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Publication of EP0763260A1 publication Critical patent/EP0763260A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the invention relates to a thin-film solar cell based on the amorphous, hydrogenated silicon and / or its alloys.
  • Thin-film solar cells based on the amorphous hydrogenated silicon (a-Si: H) and its alloys are produced in a known manner with the doping sequence nip or pin by layer deposition on suitable opaque or transparent substrates, also as stacked solar cells in a cascade arrangement (so-called Stacked cells, eg pinpin) with identical or different band gaps of the sub-cells used.
  • a-Si: H amorphous hydrogenated silicon
  • Transparent, conductive oxide layers are generally used as contact layers on the light entry side / likewise transparent conductive oxide or metal layers or a combination on the side facing away from the light from both.
  • the incidence of light advantageously takes place from the p-doped side.
  • the band gap of the p-doped layer is chosen to be higher than that of the i-layer in order to improve the entry of light into the undoped i-layer which is relevant for the light conversion and for electrical improvement. This can e.g. can be achieved with the aid of alloys of a-Si: H with N, C or O.
  • the efficiency y of a solar cell can be calculated as the product of the parameters of the current / voltage characteristic open terminal voltage oc measured under sunlight, the short-circuit current density 'sc and the fill factor FF divided by the intensity of the
  • V (v oc * 3 sc * FF) / I S s- (1)
  • buffer layers can be used in several or even each sub-cell (FIG. 1b).
  • a buffer layer is a layer with a higher band gap than the subsequent i-layer, but the buffer layer, in contrast to the p-layer, is nominally undoped.
  • the higher band gap can, as with the p layer, be achieved by alloying the a-Si: H with, for example, N, C or 0, but also by changing the material of the amorphous silicon without alloy.
  • the increased band gap reduces the recombination in the p-i interface area and thereby increases the open terminal voltage.
  • Buffer layers with a graded band gap have also been described. "Nominally undoped” means that there is no active doping, even if due to carryover of dopants, e.g. from the p-deposition, one after the p-layer in the same
  • Reaction chamber prepared buffer layer can be slightly doped.
  • An intentional low doping of the buffer layer is also known.
  • Literature: RR Arya et al. describe an a-SiC buffer layer in which the carbon content is graded downwards from the p-doped a-SiC layer to the undoped a-Si i layer [1].
  • KS Lim et al. describe the same buffer structure, but with weak p-yp doping [2]. The best results so far have been achieved with "high quality" buffer layers in which the material used for the buffer is nominally undoped and has a photoconductivity with values above 1 * 10 (Ohm * cm) -l.
  • a buffer made of a-SiC is known, the a-SiC material having a high photoconductivity. It was prepared using a high hydrogen dilution during plasma deposition [3]. Furthermore, from S. Fujikake et al. a nominally undoped a-SiO buffer is known, the a-SiO material being highly photoconductive and prepared using Sin * , CO-, and H2 [4]. In addition to these special alloys, a-Si material with an increased band gap can also be used as a "high quality" buffer.
  • buffer layers in particular those with "high quality", are successfully used to increase the efficiency of a-Si solar cells. It has been found, however, that the use of these buffers can induce increased aging (decrease in efficiency under long-term exposure to light).
  • the object of the invention is therefore to provide a solar cell in which an increase in the initial efficiency is achieved with a simultaneous lower relative degradation and a significant increase in the (long-term) stabilized efficiency is achieved. It is also an object of the invention to provide a manufacturing method for such solar cells.
  • the solar cell of the type mentioned at the outset has an additional, relatively thin, low p-doped layer as a compensation layer between the p and buffer layers (high quality) (FIG. 3 a). This measure can also be used multiple times in stacked cells (FIG. 3b).
  • the doping should be small compared to the doping of the p-layer, so that this layer does not act as an extension of the p-layer.
  • the compensation layer can also be provided several times (FIG. 3b).
  • charge carriers are generated in the i-layer of the solar cell by light irradiation and transported to the p- or n-layer by the built-in electric field.
  • the efficiency of charge carrier separation depends on the strength of the built-in electric field and the defect density of the i-layer.
  • defect states in the part of the i or buffer layer adjacent to the p layer lie above the Fermini level and are emptied by electrons. Especially in the case of the p-buffer i-n cells, there are many defect states.
  • a positive space charge zone is formed which, together with the negative space charge of the acceptors, forms an electrical double layer in the p-layer, by means of which the electric field in the i-layer is broken down. After degradation, the field is no longer sufficient for good charge separation, especially in cells with a buffer, which is why the efficiency in cells with a buffer decreases sharply over time.
  • FIG. 1 a shows a schematic representation of a solar cell layer structure with a pin structure without a buffer layer (i), or with a p-buffer-in structure with a buffer layer in the pi transition region (ii) to increase efficiency;
  • Figure lb Schematic representation of a layer structure of a
  • Stacked solar cell made of amorphous silicon with a "p _" compensation layer between the p and i layers;
  • the p, i, and n layers were deposited in these three solar cells under comparable deposition conditions.
  • the Layer thicknesses of these layers were chosen identically for the three solar cells (p: 10 nm, i: 500 n, n: 25 nm).
  • the deposition parameters and layer thicknesses of the p, compensation and buffer layers are given in Table 1.
  • each solar cell in Table 2 is in the unaged (before aging) and aged (after 300 h illumination under an AMI .5 spectrum, at 50 ° C and open clamps)
  • the compensation layer described above was also used to improve the efficiency of stacked cells.
  • the layer structure of this solar cell is p-compensation layer-buffer-i (60 nm) - n - p - compensation layer - buffer - i (330 nm) - n.
  • the comparison solar cell was also deposited in a stacked cell structure (p-buffer-i-n-p-buffer-i-n). The efficiency of both cells as a function of the irradiation time is shown in FIG. 4.
  • Table 2 Parameters of the test solar cells before and after aging (300 h, 1 sun, 50 ° C, open clamps).

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne des cellules solaires à couche mince à base de silicium amorphe hydrogéné et/ou de ses alliages, ainsi qu'un procédé de fabrication de ces cellules solaires. Les cellules solaires sont constituées d'une série de couches qui comprend une couche non dopée, une couche tampon adjacente reliée à la couche non dopée, du côté d'entrée de la lumière, une couche dopée p adjacente reliée à la couche tampon, du côté d'entrée de la lumière, et une couche dopée n reliée à l'autre côté de la couche non dopée. L'objet de l'invention est de créer des cellules solaires qui permettent d'augmenter l'efficacité stabilisée à long terme. A cet effet, une couche de compensation est prévue dans la cellule solaire entre la couche dopée p et la couche tampon.
EP95920751A 1994-06-01 1995-05-27 Cellule solaire a couche mince et son procede de fabrication Withdrawn EP0763260A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19944419273 DE4419273C2 (de) 1994-06-01 1994-06-01 Dünnschicht-Solarzelle
DE4419273 1994-06-01
PCT/DE1995/000725 WO1995033284A1 (fr) 1994-06-01 1995-05-27 Cellule solaire a couche mince et son procede de fabrication

Publications (1)

Publication Number Publication Date
EP0763260A1 true EP0763260A1 (fr) 1997-03-19

Family

ID=6519604

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95920751A Withdrawn EP0763260A1 (fr) 1994-06-01 1995-05-27 Cellule solaire a couche mince et son procede de fabrication

Country Status (3)

Country Link
EP (1) EP0763260A1 (fr)
DE (1) DE4419273C2 (fr)
WO (1) WO1995033284A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006135493A2 (fr) 2005-06-09 2006-12-21 Blue Blood Biotech Corp. Composition utilisee dans la cicatrisation de plaies et utilisation correspondante

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008049374A1 (de) 2008-09-27 2010-04-01 JODLAUK, Jörg Halbleiterfaserstrukturen als Energieerzeuger

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6249672A (ja) * 1985-08-29 1987-03-04 Sumitomo Electric Ind Ltd アモルフアス光起電力素子
JP2634811B2 (ja) * 1987-03-31 1997-07-30 鐘淵化学工業 株式会社 半導体装置
JP2634812B2 (ja) * 1987-03-31 1997-07-30 鐘淵化学工業 株式会社 半導体装置
JPH02106076A (ja) * 1988-10-14 1990-04-18 Fuji Electric Co Ltd 薄膜太陽電池

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9533284A1 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006135493A2 (fr) 2005-06-09 2006-12-21 Blue Blood Biotech Corp. Composition utilisee dans la cicatrisation de plaies et utilisation correspondante

Also Published As

Publication number Publication date
WO1995033284A1 (fr) 1995-12-07
DE4419273A1 (de) 1996-02-01
DE4419273C2 (de) 1998-11-26

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