EP0698910A2 - Verfahren und Detektoreinrichtung zur elektronischen positionsbezogenen Erfassung von Strahlung - Google Patents

Verfahren und Detektoreinrichtung zur elektronischen positionsbezogenen Erfassung von Strahlung Download PDF

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Publication number
EP0698910A2
EP0698910A2 EP95113181A EP95113181A EP0698910A2 EP 0698910 A2 EP0698910 A2 EP 0698910A2 EP 95113181 A EP95113181 A EP 95113181A EP 95113181 A EP95113181 A EP 95113181A EP 0698910 A2 EP0698910 A2 EP 0698910A2
Authority
EP
European Patent Office
Prior art keywords
layer
anode
resistance
vacuum
detector device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP95113181A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0698910A3 (enrdf_load_stackoverflow
Inventor
Horst Prof. Dr. Schmidt-Böcking
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROENTDEK-HANDELS GmbH
Northrop Grumman Litef GmbH
Roentdek Handels GmbH
Original Assignee
ROENTDEK-HANDELS GmbH
Litef GmbH
Roentdek Handels GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ROENTDEK-HANDELS GmbH, Litef GmbH, Roentdek Handels GmbH filed Critical ROENTDEK-HANDELS GmbH
Publication of EP0698910A2 publication Critical patent/EP0698910A2/de
Publication of EP0698910A3 publication Critical patent/EP0698910A3/xx
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2231/00—Cathode ray tubes or electron beam tubes
    • H01J2231/50—Imaging and conversion tubes
    • H01J2231/50005—Imaging and conversion tubes characterised by form of illumination
    • H01J2231/5001—Photons
    • H01J2231/50015—Light
    • H01J2231/50021—Ultraviolet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2231/00—Cathode ray tubes or electron beam tubes
    • H01J2231/50—Imaging and conversion tubes
    • H01J2231/50005—Imaging and conversion tubes characterised by form of illumination
    • H01J2231/5001—Photons
    • H01J2231/50031—High energy photons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2231/00—Cathode ray tubes or electron beam tubes
    • H01J2231/50—Imaging and conversion tubes
    • H01J2231/50057—Imaging and conversion tubes characterised by form of output stage
    • H01J2231/50068—Electrical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2231/00—Cathode ray tubes or electron beam tubes
    • H01J2231/50—Imaging and conversion tubes
    • H01J2231/501—Imaging and conversion tubes including multiplication stage
    • H01J2231/5013—Imaging and conversion tubes including multiplication stage with secondary emission electrodes
    • H01J2231/5016—Michrochannel plates [MCP]

Definitions

  • the invention relates to a method for decoupling image signals in position-providing high-vacuum detector devices for quantum or particle radiation according to the preamble of claim 1 and a detector device which operates according to the method and is based on the features according to the preamble of claim 2.
  • the assembly and application of the complex anode structure 1 in the evacuated Glass body 6 with the necessary wire feedthroughs for high-frequency signals not only means great technical difficulties for the manufacture of the detector, but also precludes the possibility of later being able to adapt the anode structure 1 individually in an optimized manner to a changed measurement task.
  • the individual detector components form a unit that can no longer be separated or changed.
  • an electron converter layer 4 (UV quantum electron converter layer) is applied on the inside of a radiation-permeable cover substrate 10, a chevron plate system 3 as a charge multiplier with high-voltage leads 9 led out, and the resistive anode structure 1 applied to the vacuum-side inner surface of the counter substrate 11.
  • a local charge avalanche generated by a UV quantum on the anode structure 1 is indicated with reference note 8.
  • the invention has for its object to provide a technically much simpler and more reliable electronic positioning in detector devices of the type described for quantum or particle radiation, i.e. location-specific image signal decoupling without direct electrical contacts through the vacuum partition with the possibility of adapting to changing measurement tasks.
  • the invention is characterized in a method for decoupling image signals in position-providing high-vacuum detector devices for quantum or particle radiation, which impinge on a spatially resolving anode structure as an electron avalanche via an electron multiplier device, characterized in that the electron avalanche within the vacuum on the anode side of the detector device is characterized by a high-resistance, conductive thin film remains locally collected for a short time and the collected charge is capacitively read out as an image charge by a low-impedance anode layer arranged opposite the high-resistance thin film outside the vacuum and suitably structured for location determination.
  • the invention is based on the idea that the radiation quantum-induced charge avalanches briefly collect the inner surface of the counter substrate opposite the radiation entrance through a uniform, high-resistance conductive layer and then capacitively couple it through the vacuum wall (substrate layer) to a low-resistance, structured anode layer outside the vacuum.
  • a position-giving detector device for electromagnetic radiation or particle radiation in which a plate-like electron multiplier arrangement is arranged in a layer-like manner in succession on the radiation incidence side within a space that is delimited by a flat, radiation-permeable cover substrate and a counter-substrate that is kept at a distance from it, and one at a distance from one another Surface anode are present is according to the invention characterized in that the anode for capacitive, position-related image signal readout is designed as a layer arrangement such that a high-resistance charge-collecting layer is arranged on the vacuum-side inner surface of the counter-substrate and this is arranged on the outer surface of the counter-substrate, that is to say opposite one another, suitably structured for location determination outside the vacuum , low-resistance anode layer are present.
  • the invention offers the advantage that comparatively simple, uniform detector elements or assemblies can be used, whose electronic position reading can be individually and optimized adapted to different measurement tasks by different structuring of the low-resistance anode layer lying outside the vacuum can. Another important advantage is that no electrical feedthroughs for high-frequency current pulses are necessary in the vacuum. In addition, there is the possibility of combining the amplifier and digitizing electronics in conjunction with the low-resistance anode structure as a highly integrated circuit (e.g. B. in SMD technology, as a hybrid or ASIC).
  • a highly integrated circuit e.g. B. in SMD technology, as a hybrid or ASIC.
  • the charge collecting areas or busbars for reading in proportion to the image charge on at least two, preferably on three edge sides of the anode layer are arranged at right angles to each other.
  • any other suitable structures can also be used, such as. B. a Vernier anode, a spiral structure, a delay line layer or a pixel system that is read digitally by means of a CCD.
  • the image intensifier system namely the photoelectron converter layer 4, the underlying chevron plate system 3 of a multi-channel electron multiplier and the high-resistance anode layer 1 according to the invention are installed in a high vacuum 7 as before.
  • the complex anode structure 2 for electronic position reading outside the vacuum 7 is applied or arranged on the back of the detector, ie for example on the back of the counter-substrate 6.
  • the exact location information of the position of an incident radiation quantum (UV quant) or particle is transferred capacitively after corresponding charge multiplication by the counter-substrate 6 of the image intensifier system, which is preferably made of glass, to the low-resistance anode structure 2 located outside the vacuum.
  • This capacitive transmission is possible because the charge collection layer formed on the inside of the bottom or counter substrate 6, i.e. in a vacuum, is applied as a high-resistance (anode) layer, on which the electron avalanche 8 induced by a single radiation quantum or particle is collected and there the high sheet resistance (mega-ohm range), as required, remains for a few 10ns, as shown in FIG. 2.
  • This local charge avalanche 8 capacitively couples through the glass layer of the counter substrate 6 and generates an image charge on or in the opposite, low-resistance anode structure 2.
  • the low-resistance anode structure 2 can be designed, for example, as a wedge & strip anode with three contact areas a, b and c.
  • the structure of this anode can be adapted in a comparatively simple manner to the position resolution required in each case.
  • the anode structure 2 is located on the outside of the counter substrate 6, ie in a normal air atmosphere.
  • the exact position of the image charge can then be determined using appropriately adapted, fast charge-sensitive preamplifiers and an evaluation logic, not shown, which is known in principle.
  • the capacitive coupling enables a high spatial resolution if the internal resistances of the two anode layers 1, 2 are optimal are adapted to one another and the anode structure 2 is structured geometrically in accordance with high resolution.
  • the principle of capacitive, location-based signal extraction for digital position reading can be briefly described with reference to FIG. 2:
  • the local charge cloud 8 generated in the chevron plate 3 in a vacuum strikes the high-resistance anode layer 1, which, for example, Layer with a thickness of some 100nm can be and remains there for some 10ns.
  • an image charge is built up on the low-resistance anode structure 2 by capacitive coupling on the other side of the counter-substrate 6 lying outside the vacuum.
  • this low-resistance anode structure 2 for example as a three-part wedge-strip anode (cf. FIG. 3)
  • each location is uniquely determined by a specific image charge ratio.
  • this image charge distribution can be determined by fast electronic components.
  • the position X, Y in the image plane can in turn be determined precisely from the relationships of the image charges Q1, Q2 and Q3 according to the following relationships:
  • An image charge cloud 20 which forms on the anode structure 2 is indicated in FIG. 3 by a hatched area.
  • individual events can be recorded with a very high location-related time resolution.
  • the local resolution in the case of the detectors currently being tested is approximately 1/250 of the detector width or, if suitable lens systems are used, 0.5 °. Fig.
  • FIG. 4 shows a measurement setup (top) and results (bottom) for determining the position of a falling radiation.
  • An alpha particle was used as the radiation source 22 radiating radioactive preparation used. With this arrangement, the radiation-transmissive cover substrate and the photoelectron converter layer are dispensed with, since the alpha particles can release 3 electrons directly at the entry into the chevron plate. Between the radiation source 22 and the chevron plate 3, a shadow mask 21 made of 0.2 mm thick wires is attached, the image of which is to be captured electronically.
  • the lower picture in FIG. 4 shows the silhouette of the wires of the shadow mask 2, which are recorded perpendicularly to one another via the wedge & strip structure of the low-resistance anode 2 and the subsequent electronics.
  • the resolving power determined in these measurements was less than 0.2 mm, due to the choice the anode structure.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Measurement Of Radiation (AREA)
  • Conversion Of X-Rays Into Visible Images (AREA)
EP95113181A 1994-08-23 1995-08-22 Verfahren und Detektoreinrichtung zur elektronischen positionsbezogenen Erfassung von Strahlung Withdrawn EP0698910A2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4429925 1994-08-23
DE4429925A DE4429925C1 (de) 1994-08-23 1994-08-23 Verfahren und Detektoreinrichtung zur elektronischen positionsbezogenen Erfassung von Strahlung
US08/517,774 US5686721A (en) 1994-08-23 1995-08-22 Position-transmitting electromagnetic quanta and particle radiation detector

Publications (2)

Publication Number Publication Date
EP0698910A2 true EP0698910A2 (de) 1996-02-28
EP0698910A3 EP0698910A3 (enrdf_load_stackoverflow) 1996-03-13

Family

ID=25939460

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95113181A Withdrawn EP0698910A2 (de) 1994-08-23 1995-08-22 Verfahren und Detektoreinrichtung zur elektronischen positionsbezogenen Erfassung von Strahlung

Country Status (7)

Country Link
US (1) US5686721A (enrdf_load_stackoverflow)
EP (1) EP0698910A2 (enrdf_load_stackoverflow)
JP (1) JP2643915B2 (enrdf_load_stackoverflow)
AU (1) AU2500195A (enrdf_load_stackoverflow)
DE (1) DE4429925C1 (enrdf_load_stackoverflow)
IL (1) IL114856A (enrdf_load_stackoverflow)
ZA (1) ZA957006B (enrdf_load_stackoverflow)

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FR2754068B1 (fr) * 1996-10-02 1998-11-27 Charpak Georges Detecteur a gaz de rayonnements ionisants a tres grand taux de comptage
US6326654B1 (en) 1999-02-05 2001-12-04 The United States Of America As Represented By The Secretary Of The Air Force Hybrid ultraviolet detector
DE10014311C2 (de) * 2000-03-23 2003-08-14 Siemens Ag Strahlungswandler
DE10144435B4 (de) * 2001-09-06 2005-03-24 EuroPhoton GmbH Gesellschaft für optische Sensorik Verfahren zur Charakterisierung der Eigenschaften von fluoreszierenden Proben, insbesondere lebenden Zellen und Geweben, in multi-well, in in-vitro Fluoreszenz-Assays, in DNA-Chips, Vorrichtungen zur Durchführung des Verfahrens und deren Verwendung
TWI342395B (en) * 2002-12-20 2011-05-21 Ibm Method for producing a monolayer of molecules on a surface and biosensor with such a monolayer
JP4708117B2 (ja) * 2005-08-10 2011-06-22 浜松ホトニクス株式会社 光電子増倍管
US7375345B2 (en) * 2005-10-26 2008-05-20 Tetra Laval Holdings & Finance S.A. Exposed conductor system and method for sensing an electron beam
US7368739B2 (en) 2005-10-26 2008-05-06 Tetra Laval Holdings & Finance S.A. Multilayer detector and method for sensing an electron beam
US7687759B2 (en) * 2007-11-27 2010-03-30 Itt Manufacturing Enterprises, Inc. Slotted microchannel plate (MCP)
EP2202777A1 (en) 2008-12-19 2010-06-30 Leibniz-Institut für Neurobiologie A time resolved measurement apparatus and a time sensitive detector with improved time measurement
EP2199830B1 (en) 2008-12-19 2014-07-02 Leibniz-Institut für Neurobiologie A position resolved measurement apparatus and a method for acquiring space coordinates of a quantum beam incident thereon
GB2475063A (en) 2009-11-04 2011-05-11 Univ Leicester Charge detector for photons or particles.
EP2496965A1 (en) 2009-11-05 2012-09-12 CERN - European Organization For Nuclear Research Capacitive spreading readout board
EP2562563A1 (en) * 2011-08-26 2013-02-27 CERN - European Organization For Nuclear Research Detector-readout interface for an avalanche particle detector
GB201203561D0 (en) 2012-02-29 2012-04-11 Photek Ltd Electron multiplying apparatus
JP2013254584A (ja) * 2012-06-05 2013-12-19 Hoya Corp 電子増幅用ガラス基板およびその製造方法
DE102013104355A1 (de) * 2013-04-29 2014-10-30 Ketek Gmbh Strahlungsdetektor und Verwendung des Strahlungsdetektors
DE102013008193A1 (de) 2013-05-14 2014-11-20 Audi Ag Vorrichtung und elektrische Baugruppe zum Wandeln einer Gleichspannung in eine Wechselspannung
US9425030B2 (en) * 2013-06-06 2016-08-23 Burle Technologies, Inc. Electrostatic suppression of ion feedback in a microchannel plate photomultiplier
DE102013109416B4 (de) 2013-08-29 2021-06-17 Roentdek-Handels Gmbh Teilchendetektor
DE102014117682B4 (de) 2014-12-02 2016-07-07 Roentdek-Handels Gmbh Detektorsystem und Streifenanode
GB2539506A (en) * 2015-06-19 2016-12-21 Photek Ltd Detector
CN105070629B (zh) * 2015-08-19 2017-06-13 长春理工大学 用于空间光通信具有复合波导阳极的微通道光电倍增管
US10265545B2 (en) 2016-05-06 2019-04-23 Radiation Detection and Imaging Technologies, LLC Ionizing particle beam fluence and position detector array using Micromegas technology with multi-coordinate readout

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DE3638893A1 (de) * 1986-11-14 1988-05-26 Max Planck Gesellschaft Positionsempfindlicher strahlungsdetektor
DE3704716A1 (de) * 1987-02-14 1988-08-25 Kernforschungsanlage Juelich Ortsempfindlicher detektor
GB2237142B (en) * 1989-09-08 1994-07-06 Univ London Position detecting element
FR2689684B1 (fr) * 1992-04-01 1994-05-13 Commissariat A Energie Atomique Dispositif de micro-imagerie de rayonnements ionisants.
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Also Published As

Publication number Publication date
AU2500195A (en) 1996-03-07
EP0698910A3 (enrdf_load_stackoverflow) 1996-03-13
DE4429925C1 (de) 1995-11-23
JPH08189972A (ja) 1996-07-23
IL114856A (en) 1998-10-30
JP2643915B2 (ja) 1997-08-25
ZA957006B (en) 1996-04-09
US5686721A (en) 1997-11-11
IL114856A0 (en) 1995-12-08

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