EP0696045B1 - Kathode eines flachen Bildschirmes mit konstantem Zugriffswiderstand - Google Patents

Kathode eines flachen Bildschirmes mit konstantem Zugriffswiderstand Download PDF

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Publication number
EP0696045B1
EP0696045B1 EP95410079A EP95410079A EP0696045B1 EP 0696045 B1 EP0696045 B1 EP 0696045B1 EP 95410079 A EP95410079 A EP 95410079A EP 95410079 A EP95410079 A EP 95410079A EP 0696045 B1 EP0696045 B1 EP 0696045B1
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EP
European Patent Office
Prior art keywords
layer
cathode
microtips
microtip
gate
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EP95410079A
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English (en)
French (fr)
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EP0696045A1 (de
Inventor
Jean-Frédéric Clerc
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Pixtech SA
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Pixtech SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Definitions

  • the present invention relates to the production of a microtip cathode. It applies more particularly to the realization of a microtip cathode of a flat screen of visualization.
  • Figure 1 shows the structure of a flat screen microtips of the type to which the invention relates.
  • Such a microtip screen essentially consists a cathode 1 with microtips 2 and a grid 3 provided of holes 4 corresponding to the locations of the microtips 2.
  • Cathode 1 is placed opposite a cathodoluminescent anode 5 of which a glass substrate 6 constitutes the surface screen.
  • Cathode conductors are arranged in columns on a glass substrate 10.
  • the microtips 2 are produced on a resistive layer 11 deposited on the conductors of cathode and are conventionally arranged inside of meshes defined by the cathode conductors.
  • Figure 1 partially representing the interior of a mesh, the conductors cathode do not appear in this figure.
  • the cathode 1 is associated with grid 3 which is organized in lines. The intersection of a line in grid 3 and a column of cathode 1 defines a pixel.
  • This device uses the electric field created between cathode 1 and grid 3 so that electrons are extracts from microtips 2 to phosphor elements 7 of the anode 5.
  • the anode 5 is provided with alternating strips of elements phosphors 7, each corresponding to a color (Blue, Red, Green).
  • the bands are separated from each other others by an insulator 8.
  • the phosphor elements 7 are deposited on electrodes 9, made up of corresponding bands a transparent conductive layer such as oxide indium and tin (ITO).
  • the sets of blue, red bands, green are alternately polarized with respect to the cathode 1, so that the electrons extracted from the microtips 2 of a pixel of the cathode / grid are alternately directed towards the phosphor elements 7 opposite each of the colors.
  • FIGS. 2B and 2D illustrate an example of a structure of this type, FIGS. 2B and 2D being respectively enlargements of parts of FIGS. 2A and 2C.
  • Many microtips 2, for example sixteen, are arranged in each mesh 12 defined by cathode conductors 13 (figure 2B).
  • the intersection of a line 14 of grid 3 and a column 15 of cathode 1, corresponds here, for example, to sixty-four meshes 12 of a cathode pixel ( Figure 2A).
  • the cathode 1 is generally made up of layers deposited successively on the glass substrate 10.
  • FIGS. 2C and 2D partially represent a sectional view along the line AA 'in FIG. 2B.
  • a conductive layer 13, for example made of niobium, is deposited on the substrate 10. This layer 13 is etched in a pattern of columns 15, each column having meshes 12 surrounded by cathode conductors 13.
  • a resistive layer 11 is then deposited on these cathode conductors 13.
  • the purpose of this resistive layer 11, made for example of amorphous silicon doped with phosphorus, is to protect each microtip 2 against an excess of current at the start of a microtip 2.
  • the affixing of such a resistive layer 11 aims to homogenize the electronic emission of the microtips 2 of a pixel of the cathode 1 and thus increase its lifetime.
  • An insulating layer 16, for example of silicon oxide (SiO 2 ) is deposited on the resistive layer 11 to isolate the cathode conductors 13 from the grid 3 (FIG. 2D).
  • the grid 3 is formed of a conductive layer, for example of niobium.
  • Holes 4 and wells 17 are respectively made in layers 3 and 16 to receive the microtips 2 which are for example made of molybdenum.
  • microtips 2 in wells 17 is conventionally obtained by spraying molybdenum on a removal layer on the grid 3.
  • a disadvantage of conventional techniques is that if the resistive layer protects the microtips against excess current, it cannot completely homogenize electronic transmission. In fact, microtips of a mesh are not all equidistant from the conductors cathode, which results in non-uniformity of the emission electronic.
  • Another drawback is the need to form in each of the cathode columns, meshes of conductors. What imposes the realization of a complex pattern over the entire surface of the cathode.
  • the small diameter of the microtips (of 1 to 2 ⁇ m) and the need to reproduce them with a high screen pixel density (several thousand per pixel) means that existing processes limit the surface flat screens that can be produced.
  • the disparities that can appear in the regularity of the diameter of the holes and wells for receiving microtips also adversely affect the homogeneity of the electronic emission, causing disparities in the diameter and height of the microtips.
  • the object of the present invention is to overcome these disadvantages of providing a microtip cathode providing electronic radiation of optimized homogeneity.
  • the present invention provides a microtip cathode for a flat display screen, of the type comprising a substrate, at least one conductor cathode, and microtips arranged on a layer resistive; said cathode conductor being disposed above of the resistive layer, and having circular openings in the center of each of which is arranged a microtip.
  • the diameter circular openings that the conductor of cathode is greater than the diameter of the base of a microtip.
  • the cathode is associated with a grid, separated from the conductor cathode by an insulating layer and provided with a hole in the balance of each microtip; the isolation layer and the cathode conductor having a receiving well of a microtip in line with each hole in the grid; and the diameter grid holes being substantially less than diameter of the wells of the insulation and conductor layers cathode.
  • the cathode has an auxiliary insulating layer between the conductor cathode and insulation layer.
  • the invention also relates to a method of making of a microtip cathode which consists in producing, on a stack consisting at least of a substrate, a layer resistive, a layer of cathode conductor, a layer of isolation and a layer of grid, an anisotropic etching holes in the grid layer, and a corresponding engraving of larger section wells, in the isolation layers and cathode conductor.
  • the second phase of circular pattern photolithography is made by depositing a layer of resin on the layer of grid, and by insulating this layer of resin, later to a repository of opaque calibrated microbeads for radiation sunstroke.
  • a pre-insolation step of the resin layer is carried out, prior to the microbead deposition step, by masking grid lines.
  • the access resistance between the cathode and each of the microtips is constant since it corresponds to a resistive region annular of constant dimensions.
  • Cathode 1 according to the invention, as shown in Figures 3A and 3B, comprises from an insulating substrate 10, a resistive layer 11 supporting microtips 2.
  • Cathode conductors 13 are arranged on the layer resistive 11 with possible interposition of a thin layer conductive 19 of adhesion and etching stop.
  • These drivers cathode 13 are organized in columns each of which has in its width and in its length a large number of microtips, Figure 3A showing only a small portion of a column. In other words, the drivers of cathode 13 are continuous on all columns 15.
  • Microtips 2 are arranged on the resistive layer 11 at the center of circular openings 17 which each has cathode conductor 13.
  • Each circular opening 17 defines between the microtip 2 which it receives and the conductor cathode 13, an annular resistive region through of layer 11.
  • all microtips 2 of cathode conductor 13 will be electrically separated from it last, by a resistive region of the same value, provided that the diameter of the circular openings 17 is the same.
  • the diameter of these circular openings 17 is greater than the diameter presented by the bases of the microtips 2.
  • All microtips 2 are therefore electrically separated from the cathode conductors 13 by a resistor same value. This is an essential characteristic of the present invention which leads to optimize the homogeneity of the cathodic radiation, making the current in the microtips 2.
  • the cathode 1 is associated with a control grid 3.
  • the cathode conductors 13 are then isolated from grid 3 at by means of an insulation layer 16, possibly associated with an auxiliary insulating layer 18.
  • This auxiliary insulating layer 18 is, when provided, arranged between the conductor cathode 13 and the insulating layer 16. It allows to remove the effects of "needle holes" that may present the insulating layer 16 perpendicular to the surface of the cathode conductors 13.
  • Holes 4 and wells 17 are made in the layers grid 3, insulation 16 and cathode conductors 13 (and if necessary in the auxiliary insulating layer 18) to receive microtips 2.
  • a characteristic of these holes 4 and well 17 is that wells 17 in the layers insulation 16 (and 18) and the cathode conductor 13 have a diameter significantly larger than the holes 4 in the grid layer 3.
  • each microtip 2 is deposited on the thin layer conductor 19, if it exists, plumb with holes 4, and this layer 19 is open around each microtip 2, in its free surface.
  • each microtip 2 is laterally separated from the layer of cathode conductors 13 by a ring of width corresponding approximately to the difference between the diameter of the wells 17 and the holes 4. If the fine conductive layer 19 is not used, the microtips 2 are are found directly on the resistive layer 11, and always annularly separated from the cathode conductors 13.
  • the conductors cathode 13 have a width of approximately 300 ⁇ m, corresponding to the width of a screen pixel, defined by the intersection a row 14 of grid 3 and a column 15 of cathode 1.
  • the diameter of the holes 4 is 1.3 ⁇ m, that of the well 2.6 of 2.6 ⁇ m, and the diameter of each microtip 2 is at the base of 1.1 ⁇ m.
  • This process can be implemented in three phases corresponding respectively to the production of conductors cathode 13, patterning at future locations microtips in grid lines 3, and at the realization of grid 3 and microtips 2.
  • FIGS. 4A to 4H illustrate the implementation of the first phase which corresponds to the realization of the conductors cathode 13.
  • a second step is to file a thin conductive layer 19, called etching stop.
  • the role of this layer 19 is double. On the one hand, it constitutes a surface for attaching the next layer (Figure 4C) and microtips. On the other hand, it ensures an engraving stop of the layer of cathode conductors 13. This second role will be better understood later, in relation to the description of Figures 4E, and 6A to 6C.
  • a third step ( Figure 4C) is to file a conductive layer 13.
  • the bonding of this layer 13 is favored by layer 19.
  • a fourth possible step consists ( Figure 4D) in perform an oxidation of the conductive layer 13, to obtain, in the thickness of this layer 13, an insulating layer auxiliary 18.
  • the layer 13 previously deposited is then chosen to have the characteristic of being oxidizable. We will also ensure that the thickness of layer 13, deposited during the third stage, sufficient to allow obtaining an auxiliary insulating layer 18 while retaining sufficient thickness for cathode conductors 13.
  • a fifth step we engrave in columns the cathode conductors 13.
  • the layer 19 provides, during this stage, a stop of the engraving which avoids attacking the resistive layer 11.
  • the cathode conductors 13 have, for example, a width of the order of 300 ⁇ m.
  • a conductive grid layer 3 This deposit is for example obtained in the same way as the deposition of the conductor layer cathode 13.
  • the structure thus obtained according to the invention differs from previous techniques, in particular by the fact that the conductive layer 13 is no longer etched in a pattern of mesh columns, but that the conductors cathode 13 are continuous over an entire column 15.
  • the resistive layer 11 is affixed before the conductive layer 13, which allows the formation of a layer auxiliary insulator 18 by oxidation of this conductive layer 13.
  • FIGS. 5A to 5C illustrate a second phase of the process for producing a microtip cathode according to the invention, corresponding to a phase of delimitation of lines of grid and pattern formation at future locations of microtips in grid lines 3.
  • layers 13, 18, and 19 of the stack from the first phase have been designated, in FIGS. 5A to 5C, by the common reference 15 corresponding to their layout in column.
  • This second phase uses photolithography circular patterns to define future locations microtips, i.e. holes 4 in lines of grid 3.
  • a layer of photosensitive resin 20 of negative type is applied to the conductive layer 3.
  • the width of the grid lines is, for example, on the order of 300 ⁇ m.
  • the diameter of a circular pattern has a given value included, for example between 1 and 2 ⁇ m, and the number of patterns is several thousands per screen pixel.
  • microbeads 22 are deposited on the resin layer 20.
  • These microbeads 22 are for example microbeads of glass or plastic. They are opaque to solar radiation for obtain a maximum masking effect on the areas on which they are filed.
  • the distribution of microbeads 22 on the resin layer 20 is random.
  • the quality of a screen was linked to the regularity of the density microtips 2 from one screen pixel to another and at regularity of the microtip diameter 2.
  • the difference between two microtips 2 has no influence on the screen quality as long as the density of microtips is high. So the random distribution of patterns in the layer of grid 3 has no consequence on the quality of the screen.
  • a microbead depot 22 calibrated with a given diameter of a value between 1 and 5 ⁇ m with a tolerance of 10 percent for the diameter of microbeads 22 achieves this result.
  • microbeads 22 deposited on layer 20 are sufficient and regular.
  • a first method is to immerse the stack from the first phase, coated with the resin layer 20, in a bath containing microbeads 22 in solution.
  • the density microbeads 22 in the bath is fixed according to the desired pattern density.
  • the deposit of microbeads 22 is carried out by decantation, the microbeads used being in this case in glass. It is also possible to perform the sunshine step through the bath as soon as the microbeads 22 have settled, which accelerates the execution of the process. Evacuation microbeads 22, after sunshine, takes place here simply by removing the stack and its possible support from the bath.
  • a second method consists in spraying, on the resin layer 20, a mixture of solvent and microbeads 22 contained in a tank.
  • the solvent is alcohol-based, this which allows its evaporation during spraying.
  • the distribution microbeads 22 on the resin layer 20 present good homogeneity, the density of microbeads 22 being fixed by the duration of the spraying carried out.
  • the microbeads 22 hold on the resin layer 20 by electrostatic effect, resulting from charges acquired during their crossing air between a spray nozzle and the resin layer 20.
  • the evacuation of microbeads 22 after insolation can be made by blowing or any other means.
  • a third method is to drown microbeads 22 in a viscous material, for example polyvinyl alcohol.
  • the resin layer 20 is covered with a layer of this material for example by scraping or screen printing without pattern.
  • the polyvinyl alcohol is then dried and then manner which will be described below. Subsequently, polyvinyl alcohol is dissolved, for example in water and microbeads 22 are removed at the same time.
  • this resin layer 20 is exposed by means of a light insulator almost parallel to the course of a fourth step (not shown).
  • the wavelength of radiation of the insolator is chosen according to the resin used and the precision sought, for example in the ultraviolet range.
  • the microbeads 22 are then removed of the resin layer 20 during a fifth step (not shown).
  • a sixth step ( Figure 5C), we develop the resin by implementing a conventional process in conditions compatible with the type of resin used. Of circular patterns 23 are thus formed in the layer of resin 20 at the locations of the microbeads 22. These patterns 23 are then used to engrave holes 4 and blanks corresponding wells 17 in layers 3, 16, 18, and 13, of the stack from the first phase, as we will see subsequently in relation to FIGS. 6A to 6C.
  • a variant of the insolation step consists of insulating the resin layer 20, still by means of an insulator at quasi-parallel light but by tilting layer 20 by relative to the beam axis, and rotating it around this axis.
  • the diameter actually insulated at the base of each microbead 22 is found to be less than the diameter of the microbeads 22. Patterns 23 of diameter are thus obtained smaller than the diameter of the microbeads 22.
  • the ratio between the diameter of the microbeads 22 and the diameter of the patterns 23 obtained depends on the angle of inclination of the support in relation to the axis of the quasi-parallel beam of radiation from the insolator. This variant further improves the resolution obtained by the implementation of the method according to the invention.
  • FIGS. 6A to 6C illustrate an example of setting up work of a third phase of the process according to the invention.
  • This third phase corresponds to the formation of holes 4 in lines 14 of grid 3, and of deposit of microtips 2 in wells 17 directly above these holes 4.
  • the sections of FIGS. 6A to 6C represent a part of a pixel defined by the intersection of a line 14 of the grid 3 and a column 15 of cathode 1.
  • a first step we engrave in grid layer 3, grid lines 14 as well as holes 4 at future locations of microtips 2, i.e. at the locations of the patterns 23.
  • the engraving of this first step is carried out in such a way that it attacks the material of the grid 3 without attacking the material of the layer insulating 16.
  • it is preferably a anisotropic etching.
  • the engravings of the second and third stages are stopped by the etching stop layer 19 so as not to attack the resistive layer 11 on which must be deposited the microtips 2.
  • the etching of the lines 14 of the grid 3 could also be carried out previously in the second phase.
  • reactive ion etching of the second step Figure 6A
  • the pre-sunstroke step Figure 5B
  • the pre-exposure step to limit the formation of patterns 23 directly above the cathode conductors 13, either inside columns 15.
  • the microdots 2 are deposited during a fourth step (not shown), conventionally.
  • an uplift layer commonly called “lift-off” layer
  • This evaporation leads on the one hand to the formation of a residual layer on the uplift elimination layer and on the other hand to the formation of microtips 2 in wells 17.
  • These microtips 2 have, for example, a diameter at the base of 1.1 ⁇ m and a height of the order of 1.2 ⁇ m. Then we eliminate the residual layer, using the uplift removal layer. We then obtain a structure as shown in Figure 6C.
  • each of the constituents described for the layers can be replaced by one or more constituents with the same characteristics and / or fulfilling the same function.
  • the engraving means described by way of example may be replaced by others means of engraving, dry or wet, allowing to reach the same result.
  • the succession of stages given as example can be modified according to the materials and means of engraving used.
  • the step of obtaining the layer auxiliary insulation 18 (phase 1, step 4) could be postponed after the cathode conductors 13 have been etched, the conductors cathode 13 then also being oxidized on their edges.
  • the formation of grid lines 14 could be postponed to the end of the process.
  • the second stage of the second phase pre-insulating surfaces that correspond to the grid lines. This is to avoid the formation of patterns 23 between lines 14, which would lead to removal of the insulation layer 16 at the places of these motives.
  • the first and second stages of the third phase are in this case simultaneous.
  • the dimensional indications given to example title can be changed based on specifications sought for the screen, the materials used, or other.
  • the diameter of the microbeads 22 used depends on the desired diameter for the grid holes 4 3 and the exposure technique used (vertical or oblique).

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  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Gas-Filled Discharge Tubes (AREA)

Claims (10)

  1. Mikrospitzen-Kathode (1) für einen flach-ebenen Anzeige- bzw. Wiedergabeschirm des Typs mit einem substrat (10), wenigstens einem Kathodenleiter (13), und auf einer Widerstandsschicht (11) angeordneten Mikrospitzen (2),
    dadurch gekennzeichnet, daß
    der genannte Kathodenleiter (13) über der widerstandsschicht (11) angeordnet ist und Kreisöffnungen (17) gleichen Durchmessers aufweist, in deren Zentrum jeweils eine Mikrospitze (2) angeordnet ist.
  2. Mikrospitzen-Kathode nach Anspruch 1, dadurch gekennzeichnet, daß der Durchmesser der Kreisöffnungen (17), welche der Kathodenleiter (13) aufweist, größer als der Durchmesser der Grundfläche einer Mikrospitze (2) ist.
  3. Mikrospitzen-Kathode nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß sie einem Gitter (3) zugeordnet ist, das vom Kathodenleiter (13) durch eine Isolierschicht (16) getrennt und jeweils in vertikaler Ausrichtung mit jeder Mikrospitze (2) mit einer Lochöffnung (4) versehen ist; daß die Isolierschicht (16) und der Kathodenleiter (13) einen schacht (17) zur Aufnahme einer Mikrospitze (2) jeweils in lotrechter Ausrichtung mit jeder Lochöffnung (4) des Gitters (3) bilden; und daß der Durchmesser der Lochöffnungen (4) des Gitters (3) deutlich kleiner als der Durchmesser der Schächte (17) der Isolierschicht (16) und der Kathodenleiter-Schicht (13) ist.
  4. Mikrospitzen-Kathode nach Anspruch 3, dadurch gekennzeichnet, daß sie eine isolierende Hilfsschicht (18) zwischen dem Kathodenleiter (13) und der Isolierschicht (16) aufweist.
  5. Verfahren zur Herstellung einer Mikrospitzen-Kathode, dadurch gekennzeichnet, daß es darin besteht, an einem wenigstens aus einem Substrat (10), einer Widerstandsschicht (11), einer Kathodenleiterschicht (13), einer Isolierschicht (16) und einer Gitterschicht (3) bestehenden Schicht stapel eine anisotrope Ätzung von Lochöffnungen (4) in der Gitterschicht (3), und eine entsprechende Ätzung von kreisförmigen Schachtöffnungen (17) gleichen Durchmessers und von größerem Querschnitt in der Isolierschicht (16) und in der Kathodenleiterschicht (13) vorzunehmen sowie die Anbringung von Mikrospitzen (2) im Zentrum jeweils jeder Schachtöffnung (17).
  6. Verfahren zur Herstellung einer Mikrospitzen-Kathode nach Anspruch 5, dadurch gekennzeichnet, daß das verfahren in der Durchführung der folgenden Phasen besteht:
    Herstellung von in Spalten (15) organisierten Kathodenleitern (13) auf einer auf einem Substrat (10) aufgebrachten Widerstandsschicht (11);
    Erzeugen von Kreismustern (23) in Zeilen (14) eines Gitters (3) mittels Lichtdruckätzung;
    Herstellen von Lochöffnungen (4) in den Zeilen (14) des Gitters (3), und von Schachtöffnungen (17) in der Isolierschicht (16) und der Kathodenleiterschicht (13), sowie Anbringung einer Mikrospitze (2) im Zentrum jeweils jeder Schachtöffnung (17) auf einer Widerstandsschicht (11).
  7. Verfahren zur Herstellung einer Mikrospitzen-Kathode nach Anspruch 6, dadurch gekennzeichnet, daß die erste Phase der Herstellung von Kathodenleitern (13) die folgenden Schritte umfaßt:
    vollflächige Aufbringung einer Widerstandsschicht (11) auf dem Substrat (10);
    vollflächige Aufbringung einer dünnen leitenden Ätzstopschiht (19);
    vollflächige Aufbringung einer leitenden Kathodenleiterschicht (13);
    elektrolytische Oxydation der leitenden Kathodenleiterschicht (13);
    gleichzeitige Ätzung der Kathodenleiterschicht (13) und der durch die genannte Oxydation erhaltenen isolierenden Hilfsschicht (18) gemäß einem Spaltenmuster (15); sowie
    Entfernen der Ätzstop-Schicht (19) zwischen den durch die Kathodenleiter (13) definierten Spalten (15).
  8. Verfahren zur Herstellung einer Mikrospitzen-Kathode nach Anspruch 6 oder 7, dadurch gekennzeichnet, daß die zweite Phase der Lichtdruckätzung von Kreismustern (23) in der Weise erfolgt, daß man auf die Gitterschicht (3) eine Harzschicht (20) aufbringt und diese Harzschicht (20) belichtet, nach vorheriger Aufbringung von für die Belichtungsstrahlung undurchlässigen kalibrierten Mikrokugeln (22).
  9. Verfahren zur Herstellung einer Mikrospitzen-Kathode nach Anspruch 8, dadurch gekennzeichnet, daß vor dem Verfahrensschritt der Aufbringung der Mikrokugeln (22) ein Verfahrensschritt einer Vorbelichtung der Harzschicht (20) mittel Maskierung (21) von zeilen (14) des Gitters (3) ausgeführt wird.
  10. Verfahren zur Herstellung einer Mikrospitzen-Kathode nach einem der Ansprüche 6 bis 9, dadurch gekennzeichnet, daß die dritte Phase der Ausbildung eines Gitters (3) und von Mikrospitzen (2) die folgenden Verfahrensschritte umfaßt:
    anisotrope und gleichzeitige Ätzung von Lochöffnungen (4) in der Gitterschicht (3) und Schachtrohlingen (17) in den Isolierschichten (16,18) und der Kathodenleiterschicht (13)
    Vergrößern der Schachtöffnungen (17) durch eine isotrope Ätzung;
    Anbringung von Mikrospitzen (2) jeweils im Zentrum jeder Schachtöffnung (17), auf einer dünnen leitenden Ätzstop-schicht (19);
    Entfernen der Ätzstop-Schicht (19) am Boden der Schachtöffnungen (17) um die Mikrospitzen (2) herum.
EP95410079A 1994-08-05 1995-08-02 Kathode eines flachen Bildschirmes mit konstantem Zugriffswiderstand Expired - Lifetime EP0696045B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9409925 1994-08-05
FR9409925A FR2723471B1 (fr) 1994-08-05 1994-08-05 Cathode d'ecran plat de visualisation a resistance d'acces constante

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EP0696045A1 EP0696045A1 (de) 1996-02-07
EP0696045B1 true EP0696045B1 (de) 1999-10-13

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US (2) US5808403A (de)
EP (1) EP0696045B1 (de)
JP (1) JPH08111181A (de)
DE (1) DE69512722T2 (de)
FR (1) FR2723471B1 (de)

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JP3595718B2 (ja) * 1999-03-15 2004-12-02 株式会社東芝 表示素子およびその製造方法
DE19915139A1 (de) 1999-03-26 2000-09-28 Deutsche Telekom Ag Verfahren zur Dispersionskompensation gemeinsam übertragener optischer Signale mit unterschiedlichen Wellenlängen
US6384520B1 (en) * 1999-11-24 2002-05-07 Sony Corporation Cathode structure for planar emitter field emission displays
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US6104131A (en) 2000-08-15
DE69512722T2 (de) 2000-04-06
FR2723471B1 (fr) 1996-10-31
EP0696045A1 (de) 1996-02-07
JPH08111181A (ja) 1996-04-30
US5808403A (en) 1998-09-15
FR2723471A1 (fr) 1996-02-09
DE69512722D1 (de) 1999-11-18

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