EP0685109B1 - Mikromechanisches relais mit hybridantrieb - Google Patents
Mikromechanisches relais mit hybridantrieb Download PDFInfo
- Publication number
- EP0685109B1 EP0685109B1 EP94906870A EP94906870A EP0685109B1 EP 0685109 B1 EP0685109 B1 EP 0685109B1 EP 94906870 A EP94906870 A EP 94906870A EP 94906870 A EP94906870 A EP 94906870A EP 0685109 B1 EP0685109 B1 EP 0685109B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- armature
- substrate
- electrode
- base
- base substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000005452 bending Methods 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 230000013011 mating Effects 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 4
- 230000000153 supplemental effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
- H01H1/14—Contacts characterised by the manner in which co-operating contacts engage by abutting
- H01H1/20—Bridging contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/50—Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0052—Special contact materials used for MEMS
- H01H2001/0057—Special contact materials used for MEMS the contact materials containing refractory materials, e.g. tungsten
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
- H01H2057/006—Micromechanical piezoelectric relay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0081—Electrostatic relays; Electro-adhesion relays making use of micromechanics with a tapered air-gap between fixed and movable electrodes
Definitions
- the invention relates to a micromechanical relay with a base substrate, which carries a flat base electrode and at least one fixed mating contact piece, with an armature substrate which is arranged on the base substrate and consists of selectively etchable material and from which at least one armature in the form of a tongue connected on one side is etched free carries an armature electrode opposite the base electrode and an armature contact piece opposite the counter contact piece and which has an elastically flexible region between its connection to the armature substrate and the armature contact piece, such that the armature is attracted to the base substrate when an electrical voltage is applied between the armature electrode and the base electrode , and with electrical leads to the electrodes and to the contact pieces provided on the base substrate or on the armature substrate.
- a micromechanical relay with an electrostatic drive is known, for example, from an essay by Minoru Sakata: "An Electrostatic Microactuator for Electro-Mechanical Relay", IEEE Micro Electro Mechanical Systems, February 1989, pages 149 to 151.
- voltage is applied between the armature electrode and one of the two base electrodes, so that the armature optionally carries out a pivoting movement to one side or the other. Due to the distance of the torsion bearing to the base, a certain wedge-shaped air gap remains between the electrodes even after the pivoting movement, so that the electrostatic attraction remains relatively low. This also results in a relatively low contact force.
- a relay of the type mentioned is already described in DE-C-42 05 029.
- the tongue-shaped armature with its armature electrode forms a wedge-shaped air gap with a base electrode arranged obliquely to it, on which the armature rolls during the tightening movement until it lies on the base electrode over a large area in the tightened state. This results in a high electrostatic attraction force, which ensures a sufficient contact force even with micromechanical dimensions.
- an electrostatic drive for relays has the disadvantage that at the beginning of the armature movement, that is to say with a large distance between the electrodes, the tightening force is relatively low, so that the relay responds only slowly or requires high response voltages.
- the aim of the present invention is therefore to develop a micromechanical relay of the type mentioned in such a way that the response characteristic is improved, so that the advantages of the electrostatic drive - a relatively high contact force when the armature is attracted - are retained, but at the same time the forces at the beginning of Responsiveness can be increased.
- this aim is achieved in the micromechanical relay mentioned at the outset in that the armature is provided in at least part of the above-mentioned flexible region with a piezo layer acting as a bending transducer with electrical leads, the bending force of which, when excited, supports the electrostatic attraction between the base electrode and the armature electrode.
- the armature is therefore provided with a piezo drive in addition to the electrostatic drive.
- the properties of two drive systems are usefully combined in such a way that the advantages of one drive outweigh the disadvantages of the other drive:
- the piezo drive can move the armature by a large distance or over a large switching stroke, but produces with large armature deflection , ie in the working position, only a small force.
- the electrostatic drive produces in Working position, ie when the armature is attracted, a large contact force, but the electrostatic attraction force at the beginning of the armature movement, that is to say with large electrode spacings, is only slight.
- the armature in the form of a tongue carrying the armature electrode and the piezo layer is pivotally connected on one side to an armature substrate.
- a more or less wedge-shaped air gap between the armature and the base generates a relatively high electrostatic attraction force from the start, which, however, is further improved by superimposition with the piezoelectric force.
- the base electrode is preferably arranged on an obliquely etched section of the base substrate in such a way that the armature electrode forms the wedge-shaped air gap mentioned with it in the idle state and rests approximately parallel to it in the excited state. Since no air gap remains between the electrodes after the armature has been tightened, apart from the necessary thin insulating layers, relatively high contact forces can be obtained.
- a micromechanical hybrid relay is shown schematically in FIG. 1, the actual size relationships being neglected in favor of clarity.
- a base substrate 51 is provided, which can consist, for example, of silicon, but preferably also of Pyrex glass.
- An armature substrate 52 which can preferably consist of silicon, is arranged and fastened on this base substrate 51.
- a tongue-shaped armature 53 is formed in this armature substrate 52 as a surface area that is etched free.
- the base substrate 51 and the armature substrate 52 are connected to areas etched free at their edges such that the armature 53 lies in a closed contact space 54.
- the armature has an armature contact piece 55 which interacts with a fixed mating contact element 56 of the base substrate. Furthermore, an armature electrode 57 in the form of a metal layer is arranged on the armature on its surface area facing the base, which in turn is opposed to a base electrode 58 of the base substrate. These two electrodes 57 and 58 form an electrostatic drive for the relay.
- the base electrode 58 is arranged on a beveled section 59 of the base substrate, so that the armature electrode 57, as shown in FIG. 1, rests continuously on the base electrode 58 in the drawn-up state of the armature.
- the armature 53 has a piezoelectric drive in the form of a piezo layer 60, which works as a bending transducer and, above all at the start of the armature movement, applies the necessary tightening force for the armature.
- the tongue end provided with the contact piece 55 could bend elastically to increase the contact force, while the lateral tongue ends with the electrode layer lying thereon lie flat on the base electrode 58.
- suitable insulation layers although these layers are not specifically shown.
- the two parts forming the relay are shown again in a somewhat enlarged representation before assembly, in order to emphasize the layers somewhat more clearly.
- the geometric relationships do not correspond to the actual lengths and thicknesses of the individual layers.
- An SiO 2 layer is produced thereon as an insulation layer and a metal layer is applied to this, which layer consists, for example, of aluminum and, on the one hand, the anchor electrode 57, but on the other hand also the feed line for the contact piece 55 and the inner electrode 61 for the piezoelectric layer to be subsequently applied 60 forms. Insofar as the metallic surfaces or lines have to be insulated from one another, this is done by appropriate longitudinal interruptions. After the piezoelectric layer 60, its outer electrode 62 is also a metal layer upset. At the free end of the tongue or the armature 53, the contact piece 55 is applied galvanically. In addition, the front end of the tongue can be divided into two by a slot in a switch spring and two laterally located electrostatic anchor elements.
- the base is also produced from a base substrate 51 by etching from silicon or from Pyrex glass.
- a trough 54a is produced anisotropically or isotropically, the bottom of which is parallel to the wafer surface.
- a wedge-shaped recess for producing the bevel 59 is then etched into the trough base using a technique known per se, which is inclined at a flat angle against the surface of the substrate. The inclination is exaggerated in the drawing. In a practical example, the angle is on the order of 3 °.
- a metal layer is then formed on the etched surface shape to form the base electrode 58 and the required leads.
- the contact piece 56 is generated galvanically.
- an insulation layer 63 for example made of SiO 2 , is applied in a conventional manner.
- the piezoelectric layer 60 can also extend over the entire length of the tongue. In this case, it would act as an insulation layer between the electrodes 57 and 58, so that the additional insulation layer 63 would be unnecessary.
- the two substrates 51 and 52 are joined together in a known manner, for example by anodic bonding.
- the corresponding supply lines to the metal layers are also provided without this needing to be shown in the figure.
- FIG. 3 shows a simple circuit for a hybrid drive according to FIG. 1.
- a base electrode 11 is parallel to an armature electrode 23, which face each other in the form of a plate and when a voltage is applied from the voltage source 40 serve as an electrostatic drive.
- Parallel to this electrostatic drive is a piezo transducer 41 with its electrodes 42 and 43, the electrode 43 being able to be formed from the same layer as the electrode 23.
- the electrostatic drive with the electrodes 11 and 23 and the piezo drive with the electrodes 42 and 43 can be applied in parallel to the voltage source 40 via the switch 44. Both drives respond simultaneously and overlap their forces to close the respective contact.
- the characteristic of the two drives is shown schematically in FIG.
- the force F is plotted over an axis for the anchor spacing s.
- the electrostatic force denoted by f1 is relatively low; it increases as the armature approaches the base electrode and reaches a high value when the distance s approaches 0.
- the piezoelectric attraction, denoted by f2 is greatest at the beginning of the armature movement, i.e. when the armature distance is large. It becomes smaller with increasing deflection of the bending transducer towards the base electrode.
- the piezoelectric force f2 thus compensates for the small value of f1 at the large armature distance a, while the electrostatic force f1 compensates for the small value of the piezoelectric force f2 after the armature has been closed.
- the result is an overall course of the forces f3, which can overcome the counteracting spring force f4 of the elastic bearing strips over the entire course of the path and can generate a large contact force when the armature is closed.
Landscapes
- Micromachines (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19934305033 DE4305033A1 (de) | 1992-02-21 | 1993-02-18 | Mikromechanisches Relais mit Hybridantrieb |
DE4305033 | 1993-02-18 | ||
PCT/DE1994/000152 WO1994019819A1 (de) | 1993-02-18 | 1994-02-14 | Mikromechanisches relais mit hybridantrieb |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0685109A1 EP0685109A1 (de) | 1995-12-06 |
EP0685109B1 true EP0685109B1 (de) | 1997-08-13 |
Family
ID=6480807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP94906870A Expired - Lifetime EP0685109B1 (de) | 1993-02-18 | 1994-02-14 | Mikromechanisches relais mit hybridantrieb |
Country Status (8)
Country | Link |
---|---|
US (1) | US5666258A (zh) |
EP (1) | EP0685109B1 (zh) |
JP (1) | JPH08506690A (zh) |
CN (1) | CN1040049C (zh) |
AT (1) | ATE156934T1 (zh) |
CA (1) | CA2156257A1 (zh) |
DE (1) | DE59403733D1 (zh) |
WO (1) | WO1994019819A1 (zh) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6407482B2 (en) | 1996-08-27 | 2002-06-18 | Omron Corporation | Micro-relay and method for manufacturing the same |
US6115231A (en) * | 1997-11-25 | 2000-09-05 | Tdk Corporation | Electrostatic relay |
FR2776160A1 (fr) * | 1998-03-10 | 1999-09-17 | Philips Consumer Communication | Dispositif de commutation d'antenne entre des etages d'emission et de reception |
US6320145B1 (en) * | 1998-03-31 | 2001-11-20 | California Institute Of Technology | Fabricating and using a micromachined magnetostatic relay or switch |
FI108583B (fi) * | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonaattorirakenteita |
US6236491B1 (en) | 1999-05-27 | 2001-05-22 | Mcnc | Micromachined electrostatic actuator with air gap |
US6057520A (en) * | 1999-06-30 | 2000-05-02 | Mcnc | Arc resistant high voltage micromachined electrostatic switch |
US6229683B1 (en) | 1999-06-30 | 2001-05-08 | Mcnc | High voltage micromachined electrostatic switch |
US6359374B1 (en) | 1999-11-23 | 2002-03-19 | Mcnc | Miniature electrical relays using a piezoelectric thin film as an actuating element |
US6373682B1 (en) | 1999-12-15 | 2002-04-16 | Mcnc | Electrostatically controlled variable capacitor |
US6485273B1 (en) | 2000-09-01 | 2002-11-26 | Mcnc | Distributed MEMS electrostatic pumping devices |
US6590267B1 (en) | 2000-09-14 | 2003-07-08 | Mcnc | Microelectromechanical flexible membrane electrostatic valve device and related fabrication methods |
US6377438B1 (en) | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
US6396620B1 (en) | 2000-10-30 | 2002-05-28 | Mcnc | Electrostatically actuated electromagnetic radiation shutter |
JP4109992B2 (ja) | 2001-01-30 | 2008-07-02 | 株式会社アドバンテスト | スイッチ、及び集積化回路装置 |
KR100456771B1 (ko) * | 2002-02-04 | 2004-11-12 | 주식회사 엠에스솔루션 | 고주파용 압전 스위칭 소자 |
US6784389B2 (en) * | 2002-03-13 | 2004-08-31 | Ford Global Technologies, Llc | Flexible circuit piezoelectric relay |
US7432788B2 (en) * | 2003-06-27 | 2008-10-07 | Memscap, Inc. | Microelectromechanical magnetic switches having rotors that rotate into a recess in a substrate |
GB0320405D0 (en) * | 2003-08-30 | 2003-10-01 | Qinetiq Ltd | Micro electromechanical system switch |
JP2005302711A (ja) * | 2004-03-15 | 2005-10-27 | Matsushita Electric Ind Co Ltd | アクチュエータおよびその制御方法およびこれを用いたスイッチ |
WO2006012510A1 (en) * | 2004-07-23 | 2006-02-02 | Afa Controls, Llc | Microvalve assemblies and related methods |
US7633213B2 (en) * | 2005-03-15 | 2009-12-15 | Panasonic Corporation | Actuator, switch using the actuator, and method of controlling the actuator |
JP4586642B2 (ja) * | 2005-06-14 | 2010-11-24 | ソニー株式会社 | 可動素子、ならびにその可動素子を内蔵する半導体デバイス、モジュールおよび電子機器 |
JP2007015067A (ja) * | 2005-07-08 | 2007-01-25 | Fujifilm Holdings Corp | 微小薄膜可動素子及び微小薄膜可動素子アレイ並びに画像形成装置 |
KR20070053515A (ko) * | 2005-11-21 | 2007-05-25 | 삼성전자주식회사 | Rf 멤스 스위치 및 그 제조방법 |
US7487678B2 (en) * | 2006-12-13 | 2009-02-10 | Honeywell International Inc. | Z offset MEMS devices and methods |
JP2008238330A (ja) | 2007-03-27 | 2008-10-09 | Toshiba Corp | Mems装置およびこのmems装置を有する携帯通信端末 |
JP2009238546A (ja) * | 2008-03-26 | 2009-10-15 | Panasonic Electric Works Co Ltd | 微小電気機械スイッチ |
JP5081038B2 (ja) * | 2008-03-31 | 2012-11-21 | パナソニック株式会社 | Memsスイッチおよびその製造方法 |
US8354899B2 (en) * | 2009-09-23 | 2013-01-15 | General Electric Company | Switch structure and method |
WO2013051064A1 (ja) * | 2011-10-06 | 2013-04-11 | 富士通株式会社 | Memsスイッチ |
US9251984B2 (en) * | 2012-12-27 | 2016-02-02 | Intel Corporation | Hybrid radio frequency component |
US10825628B2 (en) * | 2017-07-17 | 2020-11-03 | Analog Devices Global Unlimited Company | Electromagnetically actuated microelectromechanical switch |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU738009A1 (ru) * | 1977-04-07 | 1980-05-30 | За витель | Электрод электростатического реле |
GB2095911B (en) * | 1981-03-17 | 1985-02-13 | Standard Telephones Cables Ltd | Electrical switch device |
US4819126A (en) * | 1988-05-19 | 1989-04-04 | Pacific Bell | Piezoelectic relay module to be utilized in an appliance or the like |
DE4205029C1 (en) * | 1992-02-19 | 1993-02-11 | Siemens Ag, 8000 Muenchen, De | Micro-mechanical electrostatic relay - has tongue-shaped armature etched from surface of silicon@ substrate |
DE4205340C1 (en) * | 1992-02-21 | 1993-08-05 | Siemens Ag, 8000 Muenchen, De | Micro-mechanical electrostatic relay with parallel electrodes - has frame shaped armature substrate with armature contacts above base electrode contacts on base substrate |
-
1994
- 1994-02-14 US US08/505,312 patent/US5666258A/en not_active Expired - Fee Related
- 1994-02-14 CN CN94191220A patent/CN1040049C/zh not_active Expired - Fee Related
- 1994-02-14 WO PCT/DE1994/000152 patent/WO1994019819A1/de active IP Right Grant
- 1994-02-14 EP EP94906870A patent/EP0685109B1/de not_active Expired - Lifetime
- 1994-02-14 CA CA002156257A patent/CA2156257A1/en not_active Abandoned
- 1994-02-14 AT AT94906870T patent/ATE156934T1/de not_active IP Right Cessation
- 1994-02-14 JP JP6518543A patent/JPH08506690A/ja not_active Ceased
- 1994-02-14 DE DE59403733T patent/DE59403733D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1118199A (zh) | 1996-03-06 |
EP0685109A1 (de) | 1995-12-06 |
ATE156934T1 (de) | 1997-08-15 |
CA2156257A1 (en) | 1994-09-01 |
JPH08506690A (ja) | 1996-07-16 |
CN1040049C (zh) | 1998-09-30 |
DE59403733D1 (de) | 1997-09-18 |
WO1994019819A1 (de) | 1994-09-01 |
US5666258A (en) | 1997-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0685109B1 (de) | Mikromechanisches relais mit hybridantrieb | |
DE69025813T2 (de) | Piezoelektrischer/elektrostriktiver Antrieb | |
EP0713235B1 (de) | Mikromechanisches elektrostatisches Relais | |
DE69609414T2 (de) | Elastomeres mikroelektromekanisches system | |
DE69606760T2 (de) | Miniaturvorrichtung zur Durchführung einer vorbestimmten Funktion, insbesondere Mikro-Relais | |
AT396392B (de) | Piezo-ventil | |
DE10232954A1 (de) | Ein longitudinales, piezoelektrisches Verriegelungsrelais | |
DE10234131A1 (de) | Ein piezoelektrisch betätigter Biegeflüssigmetallschalter | |
EP0400482A2 (de) | Mikroventil | |
DE10302618B4 (de) | Elektrostatische Betätigungsvorrichtung | |
DE4231734A1 (de) | Piezoelektrische einrichtung | |
DE19823690C1 (de) | Mikromechanisches elektrostatisches Relais | |
DE4305033A1 (de) | Mikromechanisches Relais mit Hybridantrieb | |
DE4205340C1 (en) | Micro-mechanical electrostatic relay with parallel electrodes - has frame shaped armature substrate with armature contacts above base electrode contacts on base substrate | |
DE4408618B4 (de) | Verstellantrieb aus Bimorphelementen | |
DE602004008648T2 (de) | Bistabiler mikromechanischer schalter, betätigungsverfahren und entsprechendes verfahren zu seiner realisierung | |
DE19935819B4 (de) | Relais und Verfahren zu dessen Herstellung | |
EP1057196A1 (de) | Mikromechanisches elektrostatisches relais | |
DE10260854A1 (de) | Piezoaktor | |
DE102008043836A1 (de) | Verfahren zum Betreiben eines elektrostatischen Antriebs und elektrostatische Antriebe | |
EP1246215B1 (de) | Mikrorelais mit neuem Aufbau | |
DE4302204A1 (en) | Mfr. of micro-mechanical electrostatic relay - in which wedge-shaped air gap is formed between the armature element and the counter-plate | |
DE2444647C3 (de) | Piezoelektrischer Biegewandler | |
DE102005033858B4 (de) | Schalteinrichtung | |
EP1156504A2 (de) | Mikromechanisches Relais mit verbessertem Schaltverhalten |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 19950720 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT CH DE FR GB IT LI |
|
17Q | First examination report despatched |
Effective date: 19960430 |
|
GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT CH DE FR GB IT LI |
|
REF | Corresponds to: |
Ref document number: 156934 Country of ref document: AT Date of ref document: 19970815 Kind code of ref document: T |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: NV Representative=s name: SIEMENS SCHWEIZ AG Ref country code: CH Ref legal event code: EP |
|
REF | Corresponds to: |
Ref document number: 59403733 Country of ref document: DE Date of ref document: 19970918 |
|
ET | Fr: translation filed | ||
ITF | It: translation for a ep patent filed |
Owner name: STUDIO JAUMANN P. & C. S.N.C. |
|
GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) |
Effective date: 19971015 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: AT Payment date: 19980210 Year of fee payment: 5 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed | ||
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: AT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19990214 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PUE Owner name: SIEMENS AKTIENGESELLSCHAFT TRANSFER- TYCO ELECTRON Ref country code: CH Ref legal event code: NV Representative=s name: RIEDERER HASLER & PARTNER PATENTANWAELTE AG |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: 732E |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: IF02 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: CH Payment date: 20080228 Year of fee payment: 15 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: IT Payment date: 20080228 Year of fee payment: 15 Ref country code: GB Payment date: 20080227 Year of fee payment: 15 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20080218 Year of fee payment: 15 Ref country code: DE Payment date: 20080331 Year of fee payment: 15 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PCAR Free format text: RIEDERER HASLER & PARTNER PATENTANWAELTE AG;ELESTASTRASSE 8;7310 BAD RAGAZ (CH) |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20090214 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20090228 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20090228 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST Effective date: 20091030 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20090901 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20090214 Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20090302 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20090214 |