EP0591496A1 - Utilisation de composes organometalliques pour precipiter des metaux sur des substrats - Google Patents

Utilisation de composes organometalliques pour precipiter des metaux sur des substrats

Info

Publication number
EP0591496A1
EP0591496A1 EP93908955A EP93908955A EP0591496A1 EP 0591496 A1 EP0591496 A1 EP 0591496A1 EP 93908955 A EP93908955 A EP 93908955A EP 93908955 A EP93908955 A EP 93908955A EP 0591496 A1 EP0591496 A1 EP 0591496A1
Authority
EP
European Patent Office
Prior art keywords
compounds
formula
metal
deposition
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP93908955A
Other languages
German (de)
English (en)
Inventor
Ludwig Pohl
Herbert Schumann
Wilfried Wassermann
Thomas Seuss
Oliver Just
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of EP0591496A1 publication Critical patent/EP0591496A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/02—Magnesium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/10—Mercury compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te

Definitions

  • organometallic compounds to deposit the metal on substrates
  • the invention relates to the use of organometallic compounds which are metal as an element of the 2nd or
  • the 1st-8th Subgroup containing rare earths or bismuth for the production of thin films or epitaxial layers by deposition of the metal, primarily from the liquid or the gas phase, with decomposition of the organometallic compounds.
  • Nitrogen, arsenic or phosphorus can be used to manufacture electrical, electronic, optical or optoelectronic switching elements, compound semiconductors and lasers.
  • These layers can be deposited from the solid, liquid or gas phase. All known methods such as the Metal-Organic Chemical Vapor Deposition (MOCVD) method, the Photo-Metal-Organic Vapor Phase, are used for the separation from the gas phase
  • MOCVD Metal-Organic Chemical Vapor Deposition
  • Photo-Metal-Organic Vapor Phase are used for the separation from the gas phase
  • UV radiation can be decomposed using the Laser Chemical Vapor Deposition (Laser CVD) method or the Metal-Organic
  • MOMS Magnetron sputtering
  • the MOCVD method uses organometallic compounds that decompose when the metal is deposited at a temperature below 1100 ° C.
  • Typical apparatuses currently used for MOCVD consist of a "bubbler" with a feed for the organometallic component, a reaction chamber that contains what is to be coated
  • bubbler is kept at a constant, relatively low temperature, which is preferably above the melting point of the organometallic compound, but far below the decomposition temperature.
  • the reaction or decomposition chamber preferably has a much higher temperature, which is below 1100 ° C, at which the organometallic compound decomposes completely and the metal is deposited.
  • the organometallic compound is brought into the vapor state by the carrier gas and is carried into the decomposition chamber with the carrier gas.
  • the mass flow of the steam can be controlled well, and thus controlled growth of the thin layers is also possible.
  • the other methods of gas phase separation differ from this essentially only in the way in which the energy required for the decomposition is supplied.
  • the substrate merely has to be provided with a liquid or solid coating which contains a suitable organometallic compound and then thermally treated, for example, to decompose the organometallic compound.
  • the metal is deposited from the liquid phase, for example, using the spin-on technique.
  • a certain amount of the liquid solution or formulation is applied to the center of the substrate and this is then rotated at a preselected speed.
  • a film of uniform layer thickness is formed on the surface of the substrate, the thickness of which can be adjusted by the spin speed and the viscosity of the formulation and the content of metal can be predetermined by the concentration of the organometallic compound.
  • the metal layer is obtained on the substrate.
  • metal alkyls such as trimethyl gallium, trimethyl aluminum or trimethyl indium have been used to produce epitaxial layers.
  • Stabilized metal alkyls such as adducts with Lewis bases, such as e.g. Trimethylamine and triphenylphosphine (e.g. described in GB 21 23 422,
  • EP-A 108469 or EP-A 176537 or intramolecularly stabilized compounds of this type (e.g. described in
  • DE-OS 36 31 469 and DE-OS 38 41 643) can only be used in gas phase deposition methods due to either insufficient stability or excessive volatility.
  • organometallic compounds which as metal are an element of the 2nd or 4th main group, the 1st-8th Sub-group of the periodic table, an element from the group of rare earths or bismuth, which meet the above conditions in an excellent manner.
  • the invention thus relates to the use of organometallic compounds of the formula I. wherein
  • R 1 H an alkyl group with 1-8 C atoms, which can be partially or completely fluorinated, a cycloalkyl or cycloalkenyl group with 3-8 C atoms or an aryl group,
  • M is a metal of the 2nd or 4th main group, the 1st,
  • n + o corresponds to the oxidation state of the metal, Z,
  • A is a cyclohexane, cyclohexene, cyclohexadiene or phenyl ring,
  • B is a cyclopentane, cyclopentene or cyclopentadiene ring
  • Y and Y ' are each independently - (CH 2 ) s -NR 3 R 4 ,
  • Alkyl group can be partially or completely fluorinated
  • the invention furthermore relates to a method for producing thin films or layers on substrates by
  • organometallic compounds of the formula I being used as organometallic compounds.
  • the invention further relates to new compounds of the formula I which correspond to the formula II
  • R 1 , o, M, X ', Y, Y' and n have the meaning given in formula I.
  • the compounds of the formulas I and II are multi-coordinated and intramolecularly stabilized by electron transfer from the nitrogen, phosphorus, arsenic or antimony atom of group V to the electron-poor metal. They therefore have a particularly high stability against air and oxygen. They are very easy to use because they are not self-igniting and do not decompose at room temperature. Allow to reach 1100 ° C by temperature influence but they decompose with the deposition of the metal. It has been shown that the compounds of the formulas I and II are suitable both for the deposition of the metal from the liquid and from the gas phase. Since the compounds of the formulas I and II contain stable and easily removable leaving groups, there is little incorporation of carbon, which has great advantages for the quality of the end products.
  • M denotes a metal of the 2nd or
  • Main group preferably magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), germanium (Ge), tin (Sn) or lead (Pb) or bismuth (Bi), a metal of the 5th Main group.
  • M means a metal of the 1st, 2nd, 3rd , 4th, 5th, 6th, 7th or 8th subgroup of the periodic table and therefore preferably means copper (Cu), silver (Ag), gold (Au), zinc (Zn), cadmium (Cd), mercury (Hg ), Scandium (Sc), yttrium (Y), lanthanum (La), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr ), Molybdenum (Mo), tungsten (W), manganese (Mn), rhenium (Re), iron (Fe), cobalt (Co), nickel (Ni), rhodium (Rh), palladium (Pd) or platinum (Pt ).
  • M also means a metal from the group of rare earths and accordingly means cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu),
  • the radicals R 1 , R 3 and R 4 each preferably represent a straight-chain or branched alkyl group with 1-8 C atoms, preferably with 1-5 C atoms.
  • the alkyl groups are preferably straight-chain and accordingly preferably mean methyl, ethyl, propyl, butyl, pentyl, further also hexyl, heptyl, octyl, isopropyl, sec-butyl, tert-butyl, 2-methylpentyl, 3-methylpentyl or 2 -Octyl.
  • the alkyl radicals can be partially or completely fluorinated and, for example, monofluoromethyl, difluoromethyl, trifluoromethyl, difluoroethyl,
  • Trifluoroethyl, Pentaflourethyl or Trifluorpropyl mean.
  • R 1 , R 3 and / or R 4 represent a cycloalkyl or cycloalkenyl group with 3-8 C atoms, they preferably mean cyclopropyl, cyclobutyl, cyclopentyl, cyclopentenyl, cyclohexyl, cyclohexenyl, cyclohexadienyl, cycloheptyl, cycloheptenyl, cycloheptadienyl, cycloo , Cyclooctenyl, Cyclooctadienyl, Cyclooctatrienyl, Cyclooctatetraenyl or particularly preferably Cyclopentadienyl.
  • R 1 , R 3 and / or R 4 are aryl groups.
  • Aryl group preferably means a phenyl group. This phenyl group can also be substituted. Since these substituents have no significant influence on the intended use, all substituents are allowed who have no disruptive influence on the decomposition reaction.
  • the radical R 1 and also the radicals R 3 and R 4 can occur several times and then have different or the same meaning.
  • n is 1, 2, 3 or 4, o is preferably 0, 1 or 2.
  • Z means the structural elements -X-Y or
  • the sub-formula II contains new compounds which are also the subject of the invention. Since Y and Y 'can have different meanings, the formulas II and III comprise the compounds of the sub-formulas IIa-IId and IIIa-IIId:
  • the compounds of the formulas IIa, IIb, IIc, IIIa, IIIb and IIIc are particularly preferred.
  • the compounds of the formulas IIa, IIIa and IIIc are particularly preferred.
  • R 2 is preferably H or an alkyl group with 1-8 C atoms, preferably with 1-4 C atoms, which can also be partially or completely fluorinated. Accordingly, R 2 preferably denotes methyl, ethyl, propyl, butyl, trifluoromethyl, tetrafluoroethyl, pentafluoroethyl or heptafluoropropyl, further also pentyl, hexyl, heptyl, octyl, nonafluorobutyl, trifluorhexyl or also difluoropentyl. R 2 also means F.
  • R 2 occurs more than once, the meanings can be the same or different. Then preferably only one R 2 does not have the meaning of H.
  • m is 1, 2, 3 or 4, preferably 2 or 3.
  • r, p and q each independently mean 0, 1, 2 or 3, preferably 0, 1 or 2.
  • s is preferably 1 or 2, more preferably also 0.
  • the following group of compounds (1) - (40) represents an exemplary selection of particularly preferred representatives of the formulas I, II or III.
  • the compounds of the formula I can additionally contain one or more neutral ligands of the primary, secondary or tertiary amine type, but also diamines or corresponding
  • the reactions are preferably carried out in inert solvents. Suitable solvents are all those who do not interfere with the reaction and who do not
  • reaction temperatures correspond essentially to those known from the literature for the preparation of similar compounds.
  • the organometallic compounds according to the invention prove to be exceptionally stable to air, air humidity and oxygen. They show no change even if they are exposed to the air for a long time. They are stable at room temperature, but can be decomposed at elevated temperatures with metal deposition. In addition, they show only a low vapor pressure at room temperature and are therefore not very volatile. Their solubility in organic
  • Solvents such as aliphatic or aromatic hydrocarbons or ether are excellent.
  • organometallic compounds of the formula I are in principle suitable for all methods of depositing metals by decomposing organometallic compounds.
  • the organometallic compounds of the formula I are particularly suitable and preferably to be used for the deposition of the metal from the liquid or the gas phase.
  • methods known per se for the deposition from the liquid or the gas phase can be used, but in which the metal organic compounds of the formula I are used.
  • Liquid bunny deposition can be carried out, for example, by using a substrate, e.g. one
  • This coating can preferably be carried out by the known method of "spin coating", which has already been described.
  • reaction conditions for the gas phase deposition processes known per se and already described here can be selected analogously to the values known from the literature and familiar to the person skilled in the art.
  • the formulation can also contain compounds of different metals and other elements of the periodic table, preferably compounds of elements of the 5th main group.
  • compounds suitable under the reaction conditions used in particular arsenic, antimony or
  • Phosphors such as AsH 3 , As (CH 3 ) 3 , or others
  • Dopants are supplied. Mainly organometallic compounds of iron, magnesium, zinc or chromium can also be used as dopants. Frequently used compounds are Zn (CH 3 ) 2 , Mg (CH 3 ) 2 or Fe (C 5 H 5 ) 2 .
  • Layers can be used for a wide variety of components, depending on which metal connections are used.
  • the thin film systems produced according to the invention can be used for capacitors, sensors, superconductors, metal films, diodes, fast transistors, electro-optical switches, optical memories and much more.
  • a Grignard reagent prepared from 4.9 g (0.2 mol) of Mg and 19.4 g (0.16 mol) of 3-diethylaminopropyl chloride in 100 ml of THF is mixed with 0.05 mol of barium chloride in 100 ml of THF at room temperature.
  • the mixture is stirred at room temperature for 24 h, filtered, the solvent is removed and the residue is distilled in vacuo.
  • Example 3 Analogously to Example 1, bis (3-dimethylaminopropyl) cadmium is obtained from 3-dimethylaminopropyl magnesium chloride and cadmium chloride as a colorless liquid with a boiling point of 62 ° C./0.3 mbar.
  • Example 4 Analogously to Example 1, bis (3-dimethylamino-propyl) mercury is obtained from 3-dimethylaminopropyl-magnesium chloride and mercury chloride as a colorless liquid with a boiling point of 96 ° C./0.05 mbar.
  • a Grignard reagent is prepared from 6.1 g (0.25 mol) of Mg and 24.3 g (0.2 mol) of 3-dimethylaminopropyl chloride in 100 ml of THF. About 80 ml of THF are then removed and 50 ml of pentane are added to the concentrated solution. Precipitated magnesium chloride is removed by filtration and the residue is distilled in vacuo. You get

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

On utilise des composés organométalliques contenant comme constituant métallique un élément du 2ème ou du 4ème groupe principal, du 1er au 8ème sous-groupe, des terres rares ou du bismuth, afin de précipiter des métaux sur des substrats. De nouveaux composés de ce type sont également décrits.
EP93908955A 1992-04-23 1993-04-19 Utilisation de composes organometalliques pour precipiter des metaux sur des substrats Ceased EP0591496A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4213292 1992-04-23
DE4213292A DE4213292A1 (de) 1992-04-23 1992-04-23 Verwendung von metallorganischen Verbindungen zur Abscheidung des Metalls auf Substraten
PCT/EP1993/000940 WO1993022472A1 (fr) 1992-04-23 1993-04-19 Utilisation de composes organometalliques pour precipiter des metaux sur des substrats

Publications (1)

Publication Number Publication Date
EP0591496A1 true EP0591496A1 (fr) 1994-04-13

Family

ID=6457277

Family Applications (1)

Application Number Title Priority Date Filing Date
EP93908955A Ceased EP0591496A1 (fr) 1992-04-23 1993-04-19 Utilisation de composes organometalliques pour precipiter des metaux sur des substrats

Country Status (5)

Country Link
EP (1) EP0591496A1 (fr)
JP (1) JPH06508890A (fr)
KR (1) KR940701462A (fr)
DE (1) DE4213292A1 (fr)
WO (1) WO1993022472A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130160A (en) * 1996-10-02 2000-10-10 Micron Technology, Inc. Methods, complexes and system for forming metal-containing films
US5924012A (en) 1996-10-02 1999-07-13 Micron Technology, Inc. Methods, complexes, and system for forming metal-containing films
US6214729B1 (en) 1998-09-01 2001-04-10 Micron Technology, Inc. Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
US6281124B1 (en) 1998-09-02 2001-08-28 Micron Technology, Inc. Methods and systems for forming metal-containing films on substrates
US20170018425A1 (en) * 2014-03-12 2017-01-19 L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Heteroleptic diazadienyl group 4 transition metal-containing compounds for vapor deposition of group 4 transition metal-containing films
KR20240011985A (ko) * 2022-07-20 2024-01-29 엠케미칼 주식회사 신규한 몰리브덴 화합물, 이의 제조방법 및 이를 포함하는 몰리브덴 함유 박막의 제조방법
WO2024107593A1 (fr) 2022-11-18 2024-05-23 Merck Patent Gmbh Complexes métalliques du groupe 13 intramoléculaires stabilisés à stabilité thermique améliorée pour des techniques de dépôt de film mince en phase vapeur

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB984363A (en) * 1961-06-23 1965-02-24 Wellcome Found Organic chemical compounds and methods
US4057565A (en) * 1975-07-22 1977-11-08 E. I. Du Pont De Nemours And Company 2-Dialkylaminobenzyl and 2-dialkylaminomethylphenyl derivatives of selected transition metals
GB8819761D0 (en) * 1988-08-19 1988-09-21 Secr Defence Growth of znse & zns layers
DE3841643C2 (de) * 1988-12-10 1999-07-01 Merck Patent Gmbh Metallorganische Verbindungen und deren Verwendung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9322472A1 *

Also Published As

Publication number Publication date
JPH06508890A (ja) 1994-10-06
KR940701462A (ko) 1994-05-28
WO1993022472A1 (fr) 1993-11-11
DE4213292A1 (de) 1993-10-28

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