EP0588863B1 - Einrichtung zum erzeugen kurzwelliger elektromagnetischer strahlung - Google Patents

Einrichtung zum erzeugen kurzwelliger elektromagnetischer strahlung Download PDF

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Publication number
EP0588863B1
EP0588863B1 EP92911737A EP92911737A EP0588863B1 EP 0588863 B1 EP0588863 B1 EP 0588863B1 EP 92911737 A EP92911737 A EP 92911737A EP 92911737 A EP92911737 A EP 92911737A EP 0588863 B1 EP0588863 B1 EP 0588863B1
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EP
European Patent Office
Prior art keywords
crystal
crystal arrangement
carrier
arrangement
lattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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EP92911737A
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German (de)
English (en)
French (fr)
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EP0588863A1 (de
Inventor
Gerd Buschhorn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
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Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

Definitions

  • the present invention is based on a device for generating short-wave electromagnetic radiation, in particular in the X-ray and gamma radiation range, by interaction between accelerated charge carriers, in particular electrons or positrons, and a crystal lattice, with a charge carrier source for generating a bundle of high-energy charge carriers and with a crystal arrangement, which is arranged in the way of the charge carrier beam such that the charge carriers pass through the crystal lattice of the crystal arrangement parallel to a predetermined lattice direction ("channelization condition").
  • Energetically charged particles which meet a suitable single crystal at a sufficiently small angle to a crystal plane or crystal axis, oscillate along the relevant grating direction along the crystal plane or crystal axis (so-called channeling or channeling) and thereby emit electromagnetic radiation in the forward direction, the energy of which corresponding mass and energy of the incident charged particles is in the X-ray or gamma radiation range (so-called channeling or channeling radiation).
  • channeling or channeling radiation the energy of which corresponding mass and energy of the incident charged particles is in the X-ray or gamma radiation range
  • electrons with an energy between 20 and 100 MeV generate X-rays with energies between approximately 20 and 200 keV in monocrystalline silicon.
  • a charge carrier beam with the smallest possible divergence is used, which strikes a plane single crystal parallel to a selected crystal plane or crystal axis (Appl. Phys. Lett. 57 (27), December 31, 1990, 2956-2958 ).
  • the object of the present invention is to develop a device of the type specified above in such a way that it can be used to generate a non-parallel, that is to say convergent or divergent, bundle of short-wave electromagnetic radiation, in particular in the X-ray and gamma radiation range.
  • a device for generating short-wave electromagnetic radiation in particular in the X-ray and gamma radiation range, by interaction between accelerated charge carriers, in particular electrons or positrons, and a crystal lattice, with a charge carrier source for generating a bundle of high-energy charge carriers and with a crystal arrangement which is so im
  • the charge carrier beam is arranged such that the charge carriers pass through the crystal lattice of the crystal arrangement parallel to a predetermined lattice direction (lattice plane, lattice axis) ("channelization condition”), which is characterized in that the crystal arrangement of the charge carriers in at least one through the Axis of the plane of the charge carrier beam is traversed with directions which essentially converge at a predetermined point, and so that the crystal arrangement is in an arc around the predetermined point it is ordered that the channeling condition is essentially fulfilled for all charge carrier beam paths.
  • the device according to the invention makes it possible to produce a non-parallel bundle of short-wave electromagnetic radiation, in particular in the X-ray and gamma radiation range, with predetermined convergence or divergence properties, since the convergence or divergence of the short-wave electromagnetic radiation by the convergence or divergence of the crystal arrangement falling charge carrier beam is determined, which can be with particle-optical means, in particular electron lenses and.
  • the like can be influenced easily, and curved single-crystal arrangements can also be produced without major difficulties. Further developments of the present device enable modulation of the intensity or the convergence or divergence of the electromagnetic radiation beam.
  • a crystal arrangement that is curved in two planes such as a spherical cap, which can be used in combination with a rotationally symmetrical convergent or divergent charge beam bundle, can also be implemented relatively easily.
  • the intensity or convergence / divergence of the short-wave radiation beam generated can be modulated in time and / or space and, if necessary, synchronized with external measurement conditions and / or corresponding changes in convergence or divergence of the charge carrier beam.
  • a parallel electron beam 512 generated by an accelerator 520 can be made convergent in the plane of the drawing by an electron-optical cylindrical lens 513.
  • the electron optical lens is an electromagnetic lens, which is powered by a power supply device 515 via a modulator 517.
  • the modulator 517 allows the current intensity and thus the angle of convergence of the electron beam 512 to be controlled.
  • the individual crystal segments 514a, 514b, ... are held on corresponding adjusting devices 519, so that the radius of curvature of the crystal arrangement 514 can be changed.
  • the adjusting devices can each contain a control curve 519a, along which the relevant crystal segment 514c is displaced and pivoted.
  • the angle of convergence or divergence of the charge carrier beam will generally be greater than 0.1 mrad, for example greater than 0.3 mrad.
  • a monocrystalline crystal material such. B. silicon or diamond can be used. Electrons are preferred as charge carriers, the energies of which will generally be above 1 MeV, preferably above 10 MeV. Suitable crystal directions are, for example, the [111] axis and the [100] plane for Si, and the [110] axis for diamond. The thickness of the crystal arrangement can be between approximately 1 »m and 1 mm.
  • the specified materials and values are non-limiting examples.
  • the crystal arrangement can be arranged in a suitable cryostat 224, as is shown schematically in FIG. 1.
  • FIG. 5 shows a channeling or channeling device of conventional design in a top view.
  • the charge carriers for example electrons, move through the crystal along a predetermined lattice direction, that is to say parallel to a predetermined lattice plane or lattice axis, and generate an essentially parallel bundle 26 of short-wave electromagnetic radiation there by interaction with the crystal lattice. eg in the gamma radiation range. Radiation is generally linearly polarized in planar channeling.
  • both the charge carrier bundle 12 and the gamma radiation bundle 16 are essentially parallel in a horizontal and a vertical plane.
  • the charge carrier source supplies a charge carrier, in particular electron beam 212, convergent in the plane of the drawing and essentially parallel in the plane perpendicular thereto.
  • the electron beam source can contain, for example, a cylinder electron lens.
  • a platelet-shaped single crystal 214 Arranged in the path of the electron beam 212 is a platelet-shaped single crystal 214, which is bent cylindrically around an axis running perpendicular to the plane of the drawing (the curvature of the crystal is shown in an exaggerated manner in FIG. 1 and in FIGS. 3 and 4 for the sake of clarity).
  • the directions of the electron beam paths in the crystal thus converge at a predetermined point 220 and the crystal is bent so cylindrically that the channeling or channeling condition for all charge carrier beam paths in the curved crystal 214 is essentially fulfilled.
  • the X-ray or gamma radiation emitted from the crystal in the forward direction of the electron beams thus also converges in the plane of the drawing and in planes parallel to it, whereby A line focus arises on the axis of curvature.
  • the cylindrically symmetrical converging electron beam is deflected by a deflection magnet 218 and falls into a catcher 222.
  • the axis of curvature of the crystal 214 therefore passes through the point 220 in the plane of the drawing.
  • the charge beam bundle 312 generated by the charge carrier source is convergent in two mutually perpendicular planes (i.e. in the plane of the drawing and the plane perpendicular to this) and generates in combination with the crystal 314, which is cylindrically curved with respect to an axis 319 lying in the plane of the drawing, a point focus at point 320, since the channeling condition in all planes of the cylindrically curved crystal which pass through the axis 319 (including the drawing plane) is essentially fulfilled .
  • the deflecting magnet and the catcher which are normally provided in a device of the present type, are not shown in FIG. 2 and the following figures.
  • the charge carrier source supplies a divergent charge beam 412.
  • the crystal 414 is accordingly cylindrically or rotationally symmetrically concavely curved toward the charge beam source such that the crystal directions (crystal planes, crystal axes) along which the channeling takes place, in each case parallel to the individual carrier beam paths run.
  • the point of convergence 420 of the charge carrier beam directions in the crystal and the selected crystal directions therefore lies in FIG. 3 on the side of the crystal facing the charge carrier source and not on the side of the crystal facing away from the charge carrier source as in FIGS. 1 and 2.
  • the incident charge carrier beam bundle 512 is again convergent in one or two planes or rotationally symmetrical.
  • a single, appropriately curved single crystal is not used as the crystal arrangement, but rather a plurality of curved or possibly even single crystal plates or segments 514a, 514b, ... which are arranged on an arc or a spherical surface around the convergence point 520. If the segments 514a, ... are sufficiently small, they can consist of flat single crystal pieces. It is of course also easier to bend smaller crystal plates than a large single crystal plate.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Particle Accelerators (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
EP92911737A 1991-06-14 1992-06-12 Einrichtung zum erzeugen kurzwelliger elektromagnetischer strahlung Expired - Lifetime EP0588863B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4119729 1991-06-14
DE4119729A DE4119729C2 (de) 1991-06-14 1991-06-14 Einrichtung zum Erzeugen kurzwelliger elektromagnetischer Strahlung
PCT/EP1992/001321 WO1992022993A1 (de) 1991-06-14 1992-06-12 Einrichtung zum erzeugen kurzwelliger elektromagnetischer strahlung

Publications (2)

Publication Number Publication Date
EP0588863A1 EP0588863A1 (de) 1994-03-30
EP0588863B1 true EP0588863B1 (de) 1995-05-31

Family

ID=6433992

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92911737A Expired - Lifetime EP0588863B1 (de) 1991-06-14 1992-06-12 Einrichtung zum erzeugen kurzwelliger elektromagnetischer strahlung

Country Status (6)

Country Link
US (1) US5473661A (ja)
EP (1) EP0588863B1 (ja)
JP (1) JPH06508238A (ja)
CA (1) CA2111333A1 (ja)
DE (2) DE4119729C2 (ja)
WO (1) WO1992022993A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4438362C2 (de) * 1994-10-27 1996-08-08 Karlsruhe Forschzent Linse für hochenergetische Strahlung, ihre Verwendung und ihre Herstellung
US20050041779A1 (en) * 1999-11-24 2005-02-24 Btg International Limited X-ray zoom lens
JP2003515728A (ja) * 1999-11-24 2003-05-07 ビーティージー・インターナショナル・リミテッド Ｘ線ズームレンズ
GB201212024D0 (en) * 2012-07-06 2012-08-22 Univ Strathclyde Tunable converging gamma ray beam
CN105977785A (zh) * 2016-03-25 2016-09-28 中国科学院等离子体物理研究所 一种基于激光尾波场和沟道效应的光子辐射源产生方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1546363A (en) * 1976-03-30 1979-05-23 Emi Ltd X-ray generation
EP0276437B1 (de) * 1986-12-23 1991-03-13 Siemens Aktiengesellschaft Röntgenstrahlenquelle
US4894852A (en) * 1987-04-30 1990-01-16 Kamalaksha Das Gupta X-ray source with dual monocrystal targets
JP2750348B2 (ja) * 1988-04-08 1998-05-13 シーメンス、アクチエンゲゼルシヤフト 特にガスレーザーのｘ線‐前期電離のためのプラズマｘ線管、および電子銃としての用途
FR2644931A1 (fr) * 1989-03-24 1990-09-28 Gen Electric Cgr Tube a rayons x a balayage avec plaques de deflexion

Also Published As

Publication number Publication date
DE59202411D1 (de) 1995-07-06
CA2111333A1 (en) 1992-12-23
EP0588863A1 (de) 1994-03-30
US5473661A (en) 1995-12-05
DE4119729C2 (de) 1994-08-18
WO1992022993A1 (de) 1992-12-23
DE4119729A1 (de) 1993-07-29
JPH06508238A (ja) 1994-09-14

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