EP0468429B1 - SiC-Dünnschichtthermistor und Verfahren und Herstellungsverfahren. - Google Patents

SiC-Dünnschichtthermistor und Verfahren und Herstellungsverfahren. Download PDF

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Publication number
EP0468429B1
EP0468429B1 EP91112296A EP91112296A EP0468429B1 EP 0468429 B1 EP0468429 B1 EP 0468429B1 EP 91112296 A EP91112296 A EP 91112296A EP 91112296 A EP91112296 A EP 91112296A EP 0468429 B1 EP0468429 B1 EP 0468429B1
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Prior art keywords
electroconductive
films
electrode films
thermistor
substrate
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EP91112296A
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English (en)
French (fr)
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EP0468429A2 (de
EP0468429A3 (en
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Takeshi Nagai
Shuji Itou
Kunihiro Tsuruda
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority claimed from JP2197247A external-priority patent/JPH0483301A/ja
Priority claimed from JP3058648A external-priority patent/JP2701565B2/ja
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Publication of EP0468429A3 publication Critical patent/EP0468429A3/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1413—Terminals or electrodes formed on resistive elements having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a SiC thin-film thermistor which comprises electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, each of said through-holes being delimited by a surrounding wall face.
  • the invention relates further to a method of manufacturing such a SiC thin-film thermistor.
  • a SiC thin-film thermistor is generally considered suitable as a temperature sensor for use in cooking products such as, for example, a microwave oven or the like, because it is known from any one of the United States Patents No. 4,359,372, No. 4,424,507 and No. 4,968,964 to have a capability of detecting a wide range of temperature ranging from 0 to 500°C with high sensitivity.
  • the known thermistor generally comprises a thermistor element and a package enclosing the thermistor element.
  • the thermistor element comprises a sputtered SiC film formed on an electrically insulating substrate made of alumina.
  • the package includes a pair of external lead wires fixed firmly to an insulating body.
  • the thermistor element is manufactured by the formation of a pair of thick-film electrodes on one surface of an alumina substrate by the use of a firing technique that is carried out before a sputtering.
  • Each of those thick-film electrodes formed on the alumina substrate has first and second portions connected together:
  • the first portion of the respective thick-film electrode is of a generally comb-like configuration and determinative of a thermistor resistance and the second portion thereof has a surface area of 0.25 to 1 mm so large as to permit an internal lead wire to be subsequently connected therewith by the use of a welding technique.
  • the SiC film is subsequently deposited on such surface of the alumina substrate by the use of a radio frequency sputtering technique. Since the internal lead wires cannot be welded to the SiC film, the second electrode portion of each thick-film electrode must be masked to avoid a deposition of the SiC film during the sputtering. Also, since the alumina substrate is during the sputtering kept at a temperature generally higher than 600°C, material used for masking the second electrode portion to avoid the deposition of the SiC film is required to have a property capable of withstanding the elevated temperature. An alumina plate of generally elongated shape corresponding to the slender shape of the second electrode portion is generally considered one of the most suitable materials for the masking purpose because of its high-temperature withstanding capability.
  • a single cycle of the sputtering can produce a number of, for example, 1,000 to 1,500, thermistor elements and, therefore, it is a customary practice to arrange a corresponding number of alumina substrates regularly in two dimensions on a flat substrate holder during the practice of the sputtering. At the same time, the entire number of the second electrode portions of the electrodes which will eventually be formed in those thermistor elements must be masked. While the use of the alumina plate is feasible as the masking material as discussed above, alumina is very hard, but brittle and it is not possible to prepare a single alumina plate of a size sufficient to cover the entire number of the second electrode portions. In view of this, it is a conventional practice to manually place the individual alumina plates over the corresponding second electrode portions of the electrodes on the respective alumina substrates which are arranged regularly in two dimensions on the flat substrate holder.
  • the manual placement of the masking members over the individual electrode portions of the electrodes is not only complicated and cumbersome, but also time-consuming.
  • the single masking member of a size sufficient to cover the total surface area of the electrode portions may readily be available if a metallic material other than alumina is used, such single masking member tends to exhibit a large thermal deformation and can therefore not be used in high-temperature environments in excess of 600°C.
  • the conventional manufactured of the SiC thin-film thermistor has an additional problem found after the formation of the thermistor element. Specifically, after the formation of the thermistor element, the internal lead wires are welded at one end to the respective second electrode portions of the respective electrodes. Each of the internal lead wires is generally employed in the form of a platinum wire of about 0.1 mm in diameter. Since the internal lead wires are physically weak, these internal lead wires welded at one end to the corresponding second electrode protions are in turn welded at the opposite end to external lead wires each having a practically acceptable physical strength and fixed to an insulating body.
  • Each of those external lead wires is generally in the form of, for example, a generally elongated Fe-Cr alloy plate of 1 to 2 mm in width and 0.3 to 0.6 mm in thickness.
  • those external lead wires are manually individually welded to the internal lead wires and, therefore, require a complicated and time-consuming procedure.
  • a thin-film thermistor element having electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, each of said through-holes being delimited by a surrounding wall face; a pair of electrode films each including a body portion, said electrode films being formed on the first surface of the substrate; first and second electroconductive films formed on the surrounding wall faces of the respective through-holes in the substrate in electrically connected relationship with the body portions of the associated electrode films; and the resistance film formed on the first surface of the substrate so as to overlay the electrode films.
  • the present invention has been devised to provide an improved thin-film thermistor element which can be manufactured with no masking job required.
  • a thin-film thermistor according to claim 1
  • the present invention allows external lead wires to be connected direct with the respective intervening conductive films by the use of associated fired electroconductive films provided on the other surface of the alumina substrate, thereby substantially eliminating the need of use of the masking job and that of the internal lead wires.
  • a SiC thermistor element comprises a generally rectangular alumina substrate 1 having first and second surfaces 1a and 1b opposite to each other and also having a pair of through-holes 2a and 2b defined therein so as to extend from the first surface 1a to the second surface 1b thereof completely across the thickness thereof.
  • This alumina substrate 1 may be of a size, about 1.8 mm in width, about 6.5 mm in length and about 0.5 mm in thickness.
  • the diameter of each of the through-holes 2a and 2b may be variable with the size of the alumina substrate 1, it is preferred to be within the range of 0.2 to 1.0 mm so far as the illustrated size of the alumina substrate 1 is concerned.
  • the illustrated alumina substrate 1 is of a type containing about 95% alumina and each of the first and second surfaces 1a and 1b thereof has a surface roughness of 2 to 3 ⁇ m.
  • Each of the through-holes 2a and 2b has a surrounding wall lined with a respective electroconductive film to provide a generally tubular thin-walled intervening conductor 3 or 4 extending completely across the thickness of the alumina substrate 1.
  • Any one of those tubular intervening conductors 3 and 4 can be formed by printing any known electroconductive paste, for example, that containing Au, Pt, Au-Pt or Ag-Pd, to the wall surface of the respective through-hole 2a or 2b through an opening in a printing mask (not shown) from a side of the first surface 1a of the alumina substrate 1 and then by firing the printed paste to complete the intervening conductor 3 or 4.
  • the printing mask Prior to the printing, the printing mask should be placed on the first surface 1a of the alumina substrate 1 with the openings aligned respectively with the through-holes 2a and 2b as exactly as possible.
  • Each of the openings defined in the printing mask may have a diameter either equal to or greater than the diameter of any one of the through-holes 2a and 2b in the alumina substrate 1.
  • the use of the printing mask having the openings each being greater than the diameter of any one of the through-holes 2a and 2b by 0.1 mm or more is preferred and, in such case, the resultant tubular intervening conductors 3 and 4 can have annular flanges 3a and 4a deposited on the first surface 1a of the alumina substrate 1 while protruding radially outwardly from respective ends of the intervening conductors 3 and 4 as best shown in Fig. 2.
  • the application of the electroconductive paste to eventually form the intervening conductor 3 and 4 may be carried out from the opposite side, i.e., from the second surface 1b of the alumina substrate 1 so that the resultant flanges 3a and 4a can be deposited on the second surface 1b of the alumina substrate 1.
  • the first electrode film 5 has a generally rectangular body portion 5a of relatively large surface area and at least one prong 5b continued to and protruding outwardly from the body portion 5a whereas the second electrode film 6 has a generally rectangular body portion 6a of relatively large surface area and a pair of prongs 6b continued to and protruding outwardly from the body portion 6a.
  • the first and second electrode films 5 and 6 are deposited on the first surface 1a of the alumina substrate 1 with the prong 5b of the first electrode film 5 positioned between the prongs 6b of the second electrode film 6. It is to be noted that, when a SiC film 8 is deposited so as to overlay the first and second electrode films 5 and 6 as will be described later, a portion of the SiC film 8 delimited between the prongs 5b and 6b of the respective first and second electrode films 5 and 6 will be determinative of the characteristic resistance of the resultant thermistor element.
  • the first and second electrode films 5 and 6 have respective perforations 7a and 7b each left therein in in the body portion 5a or 6a in alignment with the corresponding tubular intervening conductor 3 or 4. With the first and second electrode films 5 and 6 deposited on the first surface 1a of the alumina substrate 1, the first and second electrode films 5 and 6 are thus connected electrically with the respective tubular intervening conductors 3 and 4.
  • the Au-Pt paste having a firing temperature within the range of 900 to 1,000°C is a preferable material for each of the first and second electrode films 5 and 6.
  • a temperature sensitive resistance film which may be in the form of a SiC film 8 is deposited on the alumina substrate 1 so as to overlay the first and second electrode films 5 and 6 by the use of a radio frequency sputtering technique.
  • the resultant SiC film 8 has perforations 9a and 9b left therein in alignment with the perforations 7a and 7b in the first and second electrode films 5 and 6.
  • the SiC film 8 may be vapor-deposited on the alumina substrate 1 so as to cover the entire surface area of the first surface 1a. Conditions used to accomplish the sputtering to form the SiC film 8 are disclosed in the United States Patent No. 4,359,372, issued November 16, 1982, and assigned to the same assignee of the present invention.
  • the SiC film 8 when deposited on the alumina substrate 1 by the use of the sputtering technique, may represent an undulating configuration, following indentations or irregularities that are left on the alumina substrate 1 consequent upon the formation of the electrode films 5 and 6 thereon.
  • lead wires are electrically connected to the respective body portions 5a and 6a of the electrode films 5 and 6. This connection may be accomplished according to a method shown in any one of Figs. 3 and 4, reference to which will now be made for the detailed discussion thereof.
  • lead wires to be connected with the electrode films 5 and 6 and, specifically, with the respective body portions 5a and 6a of the electrode films 5 and 6, are employed in the form of internal lead wires which are encased within a thermistor package (not shown), they may be electrically connected with the electrode films 5 and 6 in the manner as shown in Fig. 3.
  • thin-film electroconductive pieces 10a and 10b each having a generally square surface area of 1 x 1 to 1.5 x 1.5 mm in size are formed on the second surface 1b of the alumina substrate 1 in electrically connected relation with the associated tubular intervening conductors 3 and 4 in a manner similar to the formation of any one of the electrode films 5 and 6, i.e., by printing an electroconductive paste, preferably the same paste as used to form the tubular intervening conductors 3 and 4, and subsequently firing respective applied layers of electroconductive paste to complete the electroconductive pieces 10a and 10b, or by the use of any known metal vapor-deposition technique.
  • the electroconductive paste for the formation of the tubular intervening conductors 3 and 4 can be applied into the through-holes 2a and 2b from the second surface 1b of the alumina substrate 1 as hereinbefore described, the electroconductive pieces 10a and 10b may be respective integral parts of the tubular intervening conductors 3 and 4.
  • the internal lead wires identified by 11a and 11b, respectively, are welded at one end to the respective electroconductive pieces 10a and 10b.
  • respective ends of the internal lead wires 11a and 11b may be embedded in the associated electroconductive pieces 10a and 10b in electrically connected relation therewith during the formation of the latter on the second surface 1b of the alumina substrate 1.
  • the ends of the respective internal lead wires 11a and 11b opposite to the ends thereof connected with the electroconductive pieces 10a and 10b may be welded to, or otherwise formed into, associated terminal members (not shown) which are disposed on and exposed outwardly from the thermistor package for external electric connection.
  • the internal lead wires 11a and 11b are electrically connected with the respective electrode films 5 and 6 through the associated electroconductive pieces 10a and 10b and then through the tubular intervening conductors 3 and 4.
  • the SiC film 8 can be deposited over the entire area of the first surface 1a of the alumina substrate 1 so as to overlay the electrode films 5 and 6, thereby eliminating the need to use any masking member and, hence, a complicated masking job, hitherto used to pattern eventually formed SiC film fragments according to the layout of the electrode films.
  • Fig. 3 there is shown an example in which the lead wires are employed in the form of external lead wires which may be used for direct electric connection with external circuit components.
  • These external lead wires are identified by 12a and 12b each being in the form of a thin strip of preferably 0.1 to 0.5 mm in thickness.
  • the electrode films 5 and 6 and the SiC film 8 are deposited on the first surface 1a of the alumina substrate 1 in the manner shown in and described with reference to any one of Figs. 1 and 2, the external lead wires 12a and 12b are connected at one end directly with the tubular intervening conductors 3 and 4 through respective annular conductive flanges 13a and 13b.
  • Each annular conductive flange 13a and 13b connected electrically with the associated tubular intervening conductor 3 and 4 is formed by dropping a small quantity of electroconductive paste onto one end of the associated external lead wire 12a and 12b, placing the associated external lead wire 12a and 12b on the second surface 1b of the alumina substrate 1 with the droplet of electroconductive paste aligned with the associated tubular intervening conductor 3 and 4, applying a pressure necessary to hold the associated external lead wire 12a and 12b and the alumina substrate 1 together, and firing the assembly to complete the electric connection between the associated tubular intervening conductor 3 and 4 and the external lead wire 12a and 12b.
  • each fired annular conductive flange 13a and 13b may be considered a spread of electroconductive pate which has been fixed in position as a result of the firing.
  • the electroconductive paste used to form the annular conductive flanges 13a and 13b may be identical with that used for the formation of the tubular intervening conductors 3 and 4. Also, for the external lead wires 12a and 12b, thin strips of Fe-Cr alloy, Ti or Pt may be employed because this material can, when heated, exhibit a thermal expansion substantially equal to that exhibited by the alumina substrate 1.
  • the thermistor element according to the present invention is in practice employed as a temperature sensor installed in, for example, an electronic oven
  • the thermistor element is preferably encased in a protective package made preferably of glass thereby to protect the thermistor element from moisture, dust and other harmful matter generally found in the environment in which it is used.
  • This protective package made of glass can be formed in any known manner by firing a glass paste.
  • the protective package so formed can, when subjected to the elevated temperature, exhibit a thermal expansion generally equal to that exhibited by the alumina substrate 1.
  • the SiC film 8 serving as a temperature sensitive resistance element has been shown and described as formed by the use of the high frequency sputtering technique.
  • the temperature sensitive resistance element may be formed of any suitable material such as, for example, platinum (Pt) in the form of either a thick film or a thin film, other than silicon carbide (SiC).
  • Pt platinum
  • SiC silicon carbide
  • conventional electroconductive thick films are used as the tubular intervening conductors 3 and 4.
  • Au-Pt films fired at a temperature within the range of 900 to 1,000°C are preferred.
  • the sequence of formation of the electrode films 5 and 6 and the tubular intervening conductors 3 and 4 may not be limited to one particular order such as described above.
  • the firing temperature used to form the electrode films 5 and 6 is preferred to be lower than the firing temperature used to form the tubular intervening conductors 3 and 4. The reverse may also be true.
  • the firing temperature used to form the electrode films 5 and 6 be different from that used to form the tubular intervening conductors 3 and 4, a two-step firing process is required.
  • the use of inexpensive Ag-Pd electroconductive films is preferable for the tubular intervening conductors 3 and 4 since it can contribute to a reduction in manufacturing cost.
  • the use of the inexpensive Ag-Pd electroconductive films for the tubular intervening conductors 3 and 4 requires the firing or formation of the electrode films 5 and 6 to be followed by the firing or formation of the tubular intervening conductors 3 and 4 because the Ag-Pd films are fired at 850°C to form the tubular intervening conductors 3 and 4.
  • the processing time may be advantageously reduced if the firing temperature used for the formation of the tubular intervening conductors 3 and 4 is selected equal to that for the formation of the electrode films 5 and 6 made of Au-Pt alloy, because both films can be fired simultaneously and at one time.
  • the use of Au films, Pt films or Au-Pt films is preferred because they can be fired at a firing temperature within the range of 900 to 1,000°C. Although those films are expensive to make, they can advantageously provide a high reliability because of their superior thermal and chemical stability.
  • the maximum temperature to which the SiC thin-film thermistor used as a temperature sensor in the electronic oven may be exposed ranges from 300 to 500°C and, therefore, the use of any one of the Au films, Pt films and Au-Pt films which can be fired at a firing temperature of 900 to 1,000°C for the formation of the tubular intervening conductors 3 and 4 is preferred because their superior thermal stability at elevated temperature and their capability of contributing to the reduction in firing time.
  • tubular intervening conductors 3 and 4 are electrically connected with the external lead wires 12a and 12b through the annular conductive flanges 13a and 13b to provide the thermistor element which is subsequently enclosed in the protective package made of glass.
  • the SiC film 8 is placed several times in the high temperature environments during, for example, the formation of the SiC film 8 itself and the connection of the internal or external lead wires with the tubular intervening conductors 3 and 4 and, therefore, the temperature dependence of the resistance of the SiC thin film 8 tends to vary under the influence of the elevated temperature. Specifically, the higher the firing temperature and/or the greater the number of firing steps, the higher the rate of change in both resistance and B constant.
  • the B constant is a thermistor constant and is defined by an equation, [ln(R1/R2)]/(1/T1 - 1/T2), wherein R1 and R2 represent resistance values at temperatures T1(K) and T2(K), respectively.
  • R1 and R2 represent resistance values at temperatures T1(K) and T2(K), respectively.
  • the firing temperature and the number of times over which the firing is performed be not higher than 700°C and not greater than 2, respectively.
  • a transition temperature of the fired glass forming the protective package is preferably higher than an operating temperature of the SiC thin-film thermistor.
  • the higher the transition temperature the higher the firing temperature. Accordingly, considering that the SiC thin-film thermistor used as the temperature sensor in the electronic oven is operated at the operating temperature ranging from 300 to 500°C, the firing temperature is required to be higher than 650°C.
  • the firing temperature at which the applied electroconductive paste is to be fired to form the annular conductive flanges 13a and 13b and also at which the glass is fired to form the protective package is preferably chosen to be within the range of 650 to 700°C.
  • the firing temperature for the formation of the annular conductive flanges 13a and 13b and that for the protective package may differ from each other, the use of the same firing temperature is preferred by a reason similar to that discussed in connection with the firing used to form the electrode films 5 and 6 and the tubular intervening conductors 3 and 4.
  • the use of Au films, Pt films or Au-Pt films, which can be fired at the firing temperature of 650 to 700°C, is preferred as material for the annular conductive flanges 13a and 13b by a reason similar to that discussed in connection with the formation of the electrode films 5 and 6 and the tubular intervening conductors 3 and 4.
  • connection shown in and described with reference to Fig. 4 may bring about an undesirable increase in resistance between the external lead wires 12a and 12b and the associated annular conductive flanges 13a and 13b.
  • connection shown in and described with reference to Fig. 3 respective contact resistances between the internal lead wires 11a and 11b and the respective electroconductive pieces 10a and 10b are low of 0.1 ohm, because of the use of the welding technique to connect them together, and can therefore be negligible as compared with the characteristic resistance of the resultant thermistor.
  • each external lead wire 13a and 13b made of an Fe-Cr alloy
  • the associated annular conductive flange 13a and 13b which has been formed by firing the Au containing paste at 700°C for 10 minutes
  • the inventors of the present invention have conducted an experiment to measure a V-I characteristic exhibited therebetween.
  • the result of the experiment has shown that the I-V characteristic between each external lead wire 13a and 13b and the associated annular conductive flange 13a and 13b was of a linear nature so far as the direct current used for the measurement was within the range of 1 to 200 ⁇ A. This indicates that the contact resistance remains constant and independent of applied voltage and current.
  • the contact resistance was also measured in the temperature range of 20 to 400°C and was found to have decreased with increase in temperature. Typical values of contact resistance were found to be 2 to 6 ohms at 20°C and 0.5 to 1.5 ohm at 400°C, both of which were found to be not higher than 0.15% of the characteristic resistance of the thermistor which is typically 400 to 600 kilo-ohms at 20°C and 2 to 4 kilo-ohms at 400°C.
  • each of the electrode films 5 and 6 may not be always limited thereto and may be of a generally comb-like shape.
  • the electrode films 5 and 6 include respective pluralities of prongs arranged in a generally comb-like configuration, the prongs in one electrode film may be interleaved with the prongs in the other electrode film.

Claims (10)

  1. Dünnschichtthermistor, der enthält:
    ein elektrisch isolierendes Substrat (1), welches eine erste und eine zweite Oberfläche (1a, 1b), die einander gegenüberliegend angeordnet sind, sowie ein Paar Durchgangslöcher (2a, 2b) aufweist, die darin so definiert sind, daß sie sich vollständig durch die Dicke des Substrats (1) hindurch erstrecken, wobei jedes der Durchgangslöcher durch eine Umfangswandfläche begrenzt ist,
    dadurch gekennzeichnet, daß der Dünnschichtthermistor weiterhin enthält: ein Paar Elektrodenschichten (5, 6), die jeweils einen Hauptabschnitt (5a, 6a) mit großem Oberflächenbereich sowie einen in etwa kammförmigen Abschnitt aufweisen, der sich von dem Hauptabschnitt (5a, 6a) aus nach außen fortsetzt, wobei die Elektrodenschichten (5, 6) an der ersten Oberfläche (1) des Substrats so angeordnet sind, daß der kammförmige Abschnitt der einen Elektrodenschicht (5, 6) dem kammförmigen Abschnitt der anderen Elektrodenschicht gegenüberliegt;
    eine erste und eine zweite elektrisch leitende Schicht (3, 4), die in dem Substrat an den Umfangswandflächen des jeweiligen Durchgangslochs in elektrisch leitender Verbindung mit den Hauptabschnitten der zugehörigen Elektrodenschichten (5, 6) vorgesehen sind;
    eine temperatursensitive Widerstandsschicht (8), die auf der ersten Oberfläche (1a) des Substrats (1) so angeordnet ist, daß sie die Elektrodenschichten (5, 6) bedeckt;
    elektrisch leitende Lagen (10a, 10b), die auf der zweiten Oberfläche des Substrats
    in elektrisch leitender Verbindung mit den elektrisch leitenden Schichten in den Durchgangslöchern (2a, 2b) angeordnet sind; und
    ein Paar elektrisch leitende Leitungsdrähte (11a, 11b), die jeweils mit den elektrisch leitenden Lagen (10a, 10b) auf der zweiten Oberfläche des Substrats (1) verbunden sind.
  2. Thermistor nach Anspruch 1, weiterhin enthaltend ein aus gebranntem Glas hergestelltes Schutzgehäuse, das den Thermistor aufnimmt.
  3. Dünnschichtthermistor nach Anspruch 1, weiterhin enthaltend ein erstes und ein zweites gebranntes, elektrisch leitendes Teil (10a, 10b), die elektrisch mit der ersten bzw. der zweiten elektrisch leitenden Schicht (3, 4) verbunden sind; und ein Paar Metallstreifen, die elektrisch mit dem ersten bzw. dem zweiten gebrannten, elektrisch leitenden Teil verbunden sind, wobei jeder der Metallstreifen eine Dicke innerhalb des Bereichs von 0,1 bis 0,5 mm aufweist.
  4. Thermistor nach Anspruch 3, bei dem jeder der Metallstreifen aus einer Fe-Cr-Legierung hergestellt ist.
  5. Thermistor nach Anspruch 3, weiterhin enthaltend ein aus gebranntem Glas hergestelltes Schutzgehäuse, das den Thermistor aufnimmt.
  6. Verfahren zum Herstellen eines SiC-Dünnschichtthermistors gemäß einem der Ansprüche 1 bis 5, wobei das Verfahren die folgenden Schritte enthält:
    Herstellen eines elektrisch isolierenden Substrats, das eine erste und eine zweite Oberfläche, die einander gegenüberliegend angeordnet sind, sowie ein Paar Durchgangslöcher aufweist, die darin so definiert sind, daß sie sich vollständig durch die Dicke des Substrats erstrecken, wobei jedes der Durchgangslöcher durch eine Umfangswandfläche begrenzt ist;
    Bilden eines Paares Elektrodenschichten auf der ersten Oberfläche des Substrats durch Einsatz eines ersten Brennprozesses, wobei jede der Elektrodenschichten einen Hauptabschnitt mit großem Oberflächenbereich sowie einen in etwa kammförmigen Abschnitt aufweist, der sich nach außen von dem Hauptabschnitt aus fortsetzt, wobei die kammförmigen Abschnitte der jeweiligen Elektrodenschichten so positioniert sind, daß sie einander gegenüberliegen;
    Bilden einer ersten und einer zweiten elektrisch leitenden Schicht auf den jeweiligen Umfangswandflächen der Durchgangslöcher in dem Substrat in elektrisch leitender Verbindung mit den Hauptabschnitten der zugehörigen Elektrodenschichten durch Einsatz eines zweiten Brennprozesses;
    Anordnen einer SiC-Schicht auf der ersten Oberfläche des Substrats durch Einsatz eines Hochfrequenzsputterprozesses in der Weise, daß die Schicht die Elektrodenschichten überdeckt, und Bilden auf der zweiten Oberfläche des Substrats eine erste und eine zweite elektrisch leitende Lage (10a, 10b) in elektrisch leitender Verbindung mit den Schichten in den Durchgangslöchern.
  7. Verfahren nach Anspruch 6, bei dem die Temperatur, bei welcher der erste Brennprozeß durchgeführt wird, um die Elektrodenschichten (5, 6) zu bilden, gleich der Temperatur ist, bei der der zweite Brennprozeß für die Bildung der ersten und der zweiten elektrisch leitenden Schicht (3, 4) durchgeführt wird.
  8. Verfahren nach Anspruch 6, weiterhin enthaltend einen Schritt des Herstellens eines Paar an metallischen Streifen, die jeweils eine Dicke innerhalb des Bereiches von 0,1 bis 0,5 mm aufweisen, einen Schritt des Verbindens der Metallstreifen mit der ersten und der zweiten elektrisch leitenden Schicht durch jeweils gebrannte, elektrisch leitende Elemente und einen Schritt des Einschließens des Thermistorelements in einem Schutzgehäuse, das aus gebranntem Glas hergestellt ist.
  9. Verfahren nach Anspruch 8, bei dem die Temperatur, bei dem die gebrannten elektrisch leitenden Elemente gebrannt werden, gleich der Temperatur ist, bei dem das Glas gebrannt wird, um das Schutzgehäuse zu bilden.
  10. Verfahren nach Anspruch 9, bei dem die Temperatur innerhalb des Bereiches von 650 bis 700° C liegt.
EP91112296A 1990-07-25 1991-07-23 SiC-Dünnschichtthermistor und Verfahren und Herstellungsverfahren. Expired - Lifetime EP0468429B1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP197247/90 1990-07-25
JP2197247A JPH0483301A (ja) 1990-07-25 1990-07-25 薄膜サーミスタ
JP58648/91 1991-03-22
JP3058648A JP2701565B2 (ja) 1991-03-22 1991-03-22 薄膜サーミスタおよびその製造方法

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EP0468429A2 EP0468429A2 (de) 1992-01-29
EP0468429A3 EP0468429A3 (en) 1992-12-09
EP0468429B1 true EP0468429B1 (de) 1996-02-28

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EP91112296A Expired - Lifetime EP0468429B1 (de) 1990-07-25 1991-07-23 SiC-Dünnschichtthermistor und Verfahren und Herstellungsverfahren.

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US (1) US5216404A (de)
EP (1) EP0468429B1 (de)
KR (1) KR960011154B1 (de)
AU (1) AU627663B2 (de)
CA (1) CA2047639C (de)
DE (1) DE69117374T2 (de)

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DE69117374T2 (de) 1996-08-01
KR920003339A (ko) 1992-02-29
KR960011154B1 (ko) 1996-08-21
EP0468429A2 (de) 1992-01-29
CA2047639C (en) 1997-09-30
CA2047639A1 (en) 1992-01-26
AU627663B2 (en) 1992-08-27
AU8129291A (en) 1992-01-30
US5216404A (en) 1993-06-01
DE69117374D1 (de) 1996-04-04
EP0468429A3 (en) 1992-12-09

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