EP0430691B1 - Hétérostructures semi-conductrices - Google Patents

Hétérostructures semi-conductrices Download PDF

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EP0430691B1
EP0430691B1 EP90312999A EP90312999A EP0430691B1 EP 0430691 B1 EP0430691 B1 EP 0430691B1 EP 90312999 A EP90312999 A EP 90312999A EP 90312999 A EP90312999 A EP 90312999A EP 0430691 B1 EP0430691 B1 EP 0430691B1
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laser
layer
active
compound semiconductor
waveguide
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EP0430691A3 (en
EP0430691A2 (fr
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Robert L. Thornton
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Xerox Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H01S5/0605—Self doubling, e.g. lasing and frequency doubling by the same active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Definitions

  • This invention relates to surface-skimming, buried heterostructure III-V and II-VI compound semiconductor lasers and, more particularly, to buried heterostructure compound semiconductor devices which can be configured to operate either as surface-skimming heterotransverse junction (HTJ) lasers or as lateral heterojunction bipolar transistors (L-HBT′s).
  • HTJ surface-skimming heterotransverse junction
  • L-HBT′s lateral heterojunction bipolar transistors
  • Buried heterostructure devices of that general type are preferred because their internal structures are planar and are fabricated entirely by diffusion, without any intermediate etching steps or any other interruptions requiring epitaxial regrowth.
  • Possibly-relevant articles are: R.L. Thornton et al. , "Unified Planar Process for Fabricating Heterojunction Bipolar Transistors and Buried Heterostructure Lasers Utilizing Impurity Induced Disordering” Applied Physics Letters , Vol. 53, No. 26, December 26, 1988, pp. 2669-2671; and R. L. Thornton et al. , “Demonstration and Properties of a Planar Heterojunction Bipolar Transistor with Lateral Current Flow," IEEE Transcations on Electron Devics , Vol. 36, No. 10, October 1989, pp. 2156-2164
  • the accepted practice has been to bury the active region of a HTJ laser sufficiently far below the outer surface of the semiconductor to ensure that the evanescent optical field of the laser decays to a negligibly low intensity level before it reaches the outer surface of the semiconductor.
  • the active regions of AlGaAs HTJ lasers characteristically have been buried at depths in excess of about 1 ⁇ m for effectively isolating their evanescent optical fields from their usual GaAs capping layers and from the metallizations that are normally provided for making external electrical connections to them.
  • This practice has been followed, even though it was recognized that the performance of the structurally corresponding L-HBT transistor was affected adversely by burying its active base channel so deeply.
  • the width of the base channel of such a transistor could be significantly reduced and more precisely controlled, while maintaining a given photolithographic feature size, by forming the active base channel closer to the outer surface of the multilayer heterostructure.
  • conventional HBT technology provided convincing evidence that L-HBT transistors having narrower base channels would have higher current gain and improved high-frequency performance.
  • the depth to which the active base region of a dual-function HTJ laser/L-HBT device has been buried has been governed by the assumption that the evanescent optical field intensity of the waveguided modes of the laser configuration of such a device should be negligible at the surface of the device.
  • HTJ lasers can operate satisfactorily with waveguided modes of substantial optical intensity at the outer surface of the multilayer heterostructures in which they are fabricated, thereby permitting such lasers and L-HBT transistors having base channels of reduced length to be fabricated in the same set of epitaxial layers.
  • the surface-skimming characteristic of the HTJ lasers provided by this invention enables them to be configured relatively easily, without requiring any epitaxial regrowth, to operate as distributed feedback (DFB) lasers in axial-or surface-emitting configurations and to function as harmonic generators.
  • DFB distributed feedback
  • Single and multiple base channel L-HBT transistors, as well as structurally corresponding single and multiple quantum well surface-skimming HTJ lasers, can be constructed in accordance with this invention.
  • a buried heterostructure compound semiconductor device 21 which can be biased to operate either as a surface-skimming HTJ laser or as a L-HBT transistor.
  • the HTJ laser and the L-HBT configurations of the device 21 are structurally consistent because they are fabricated in the same set of epitaxial layers 23-26 and have similar geometries. Moreover, they can be fabricated using similar processing steps, so they are well suited for optoelectronic integration.
  • MOCVD metallo-organic chemical vapor deposition
  • All epitaxial layers, except the GaAs active layer 25 in some situations, are doped with p-type impurities, such as magnesium; suitably to concentrations of approximately 1 x 1018 Mg atoms/cm3 in the Al m Ga1 ⁇ m A s layer 23; 2 x 1018 Mg atoms/cm3 in the lower Al n Ga 1-n As layer 24, and 5x1018 Mg atoms/cm3 in the upper Al n Ga 1-n As layer 26.
  • p-type impurities such as magnesium
  • the active layer 25 may tend to acquire a p-type conductivity, without being directly doped, either as a result of the outdiffusion of p-type impurities into it from the adjacent doped layers 24 and 26 during any subsequent high temperature processing of the device 22, or as a result of the migration of holes into it from those adjacent layers 24 and 26.
  • the GaAs buffer layer is not shown because it merely functions as an oxygen-getter layer for the MOCVD process, to enhance the quality of the other epitaxial layers 23-26.
  • the quality of the epitaxial layers 23-26 of the multilayer heterostructure is significant because they are functional components of the HTJ laser configuration of the device 21.
  • the layers 24-26 also are integral components of its L-HBT configuration.
  • the Al m Ga 1-m As layer 23 is the cladding for the lower waveguide layer 24 of the laser, and the layer 24 also is the lower burying layer for the transistor.
  • the GaAs layer 25 functions as the active region of the laser and as the active base channel of the transistor device.
  • the layer 26 which functions as the upper waveguide for the laser and as the upper burying layer for the transistor.
  • the ambient atmosphere typically air
  • the cladding for the upper waveguide 26 of the laser configuration of the device 21 because this feature causes the waveguided modes of the laser to be asymmetrically distributed and, therefore, materially influenced by the selection of the alloy composition of the Al m Ga 1-m A s cladding layer 23 for the lower waveguide 24.
  • the lateral heterojunctions of the surface-skimming HTJ laser/L-HBT device 21 advantageously are formed by diffusions from the upper surface of its multilayer heterostructure.
  • impurity-induced disordering (IID) via silicon (Si) diffusion is utilized to convert laterally-separated sections of the buried GaAs active layer 25 into n-type AlGaAs regions 31 and 32, thereby forming the collector and the emitter, respectively, of the L-HBT device and the quantum well of the HTJ laser.
  • Such a IID process typically is carried out by first depositing a film of Si3N4 on the upper surface of the multilayer heterostructure, such as by chemical vapor deposition (CVD), and by then patterning the Si3N4 film to serve as a mask 41 for the diffusion of Si.
  • a bilayer film which is composed of a thin layer of Si 42 capped by a thin layer of Si3N4 44, is deposited, again suitably by CVD, to provide a source for the Si diffusion. Then, the diffusion is performed at 850°C for about 1 hour to reach a depth of approximately 0.4 ⁇ m.
  • the rate of interdiffusion of the GaAs layer 25 into the adjacent AlGaAs layers 24 and 26 is substantially increased thereby forming a lateral n-p-n structure which has substantially higher alloy compositions (and, therefore, wider bandgaps) in its collector and emitter regions 31 and 32 than in its active base region or channel 45.
  • hydrogen nuclei or the like are ion implanted into its epitaxial layers 23-26, as at 46-49 (Fig. 1).
  • Implants 46 and 47 resistively desensitize the p-n junctions between the active base layer 25 and the outer sidewalls of the collector and emitter regions 31 and 32, respectively, by creating irregularities in the crystal structure in the vicinity of those junctions, thereby increasing their resistance sufficiently to inhibit the flow of current through them.
  • the implants 46 and 47 laterally overlap the outer margins of the collector and emitter regions 31 and 32, respectively, and penetrate into the lower epitaxial layer 23 to roughly the same depth as the collector and emitter regions 31 and 32.
  • the implants 48 and 49 are located at the opposite lateral extremities of the device 21 and fully penetrate through all of its epitaxial layers 23 and 26 (and, if desired, even into its substrate 28) for electrically isolating the device 21 from any other devices (not shown) the substrate 28 supports, including any other devices which are fabricated using the same set of epitaxial layers 23-26.
  • the implants 47 and 49 laterally overlap, but there is a lateral gap between the implants 46 and 48 so that an upper surface base contact 51 can be seated between them.
  • a patterned metallization typically is deposited on the upper surface of the device 21 to provide coplanar contacts 51-53 for making electrical connections to its base, collector and emitter 45, 31 and 32, respectively.
  • the base 45 could be contacted from the substrate side of the device 21, but the upper surface base contact 51 is preferred because it simplifies the fabrication of the device 21,
  • the device 21 has an asymmetric geometry because its base contact 51 is laterally offset from its n-p-n heterostructure.
  • the base contact 51 may be relocated to a position mid-way between the collector contact 52 and the emitter contact 53. But, such a modification would inhibit the laser mode of operation of the device 21, unless the base contact 51 is composed of a material which is substantially non-absorbing to the wavelength of the fundamental emission of the laser.
  • the device 21 operates as a transistor when its collector/base junction is reverse biased and its emitter/base junction is forward biased.
  • the relatively shallow depth at which the active base layer 25 of the device 21 is buried e. g., in the embodiment illustrated in Fig. 1, it is buried at a depth of only 0.15 ⁇ m below the upper surface of the device 21) significantly reduces the width of the base channel 45 which can be reliably and repeatedly provided for the device 21 when, as here, its base channel width 45 is dependent upon a diffusion from its upper surface under the control of a mask which is defined by a photolithographic process of given minimum feature size.
  • the tapering of the Si diffusions which define the collector and emitter regions 31 and 32 of the device 21 is less pronounced near the upper surface of the device, so its lateral n-p-n heterostructure has relatively abrupt p-n junctions.
  • the present invention can be employed for providing L-HBT devices having increased current gain and improved high frequency performance.
  • the device 21 operates as a single quantum well HTJ laser whenever its collector/base and emitter/base junctions are both forwardly biased sufficiently to cause the carrier density in its active base region 45 to build to a level at which stimulated emission is initiated.
  • the lasing action occurs in the plane of the lateral n-p-n heterostructure of the device 21 along an axis which is normal to that structure (i. e., the lateral heterostructure defines the quantum well of the HTJ laser).
  • the waveguide for the laser mode of operation of the device 21 is asymmetric because the interface between its upper waveguiding layer 26 and the ambient air is an integral part of the waveguide. Therefore, as shown in Fig. 3, the waveguided modes of the laser are asymmetrically distributed.
  • ⁇ is the percentage of the optical power that is within the active region 45 and, therefore, is a key factor for calculating the threshold current required for lasing action in a given laser structure.
  • the preferred alloy composition for the lower cladding layer 23 of the device 21 contains as much aluminum as possible consistent with maintaining its structural stability (this typically is a composition of approximately Al°85Ga°15As). In some situations, however, it may be desirable to reduce the percentage of aluminum in the lower cladding layer 23 somewhat in order to reduce the far field divergence of the laser emission.
  • the device 21 may be cleaved transversely with respect to its lateral n-p-n heterostructure to form a classical Fabry-Perot length cavity with reflective end mirrors or facets for providing the coherent positive optical feedback that is needed for its laser mode of operation.
  • at least one of the end mirrors of the cleaved laser configuration of the device 21 may be partially transmissive for axially extracting output radiation from one or both ends of the laser.
  • a n th order diffraction grating 54 may be formed on the outer surface of the upper layer 26 of the device 21 in vertically superimposed longitudinal alignment with its active region 45 for operating the device 21 as a distributed feedback (DFB) laser.
  • the grating 54 extends from end-to-end of the active region 45 of the device 21, thereby enabling it to interact with the optical field at the surface of the device 21 along substantially the full length of its active region 45 to operate as a distributed Bragg reflector for providing coherent positive optical feedback for the DFB laser configuration of the device 21.
  • the grating 54 typically is formed by etching the outer surface of the upper layer 26 of the device 21, but that does not interfere in any way with the important goal of avoiding the need for epitaxial regrowth. Since the optical feedback for the DFB laser configuration of the device 21 is provided by the grating 54, the laser cavity need not be terminated by reflective end mirrors, so one or both ends of the cavity may be transmissive to provide an axial output for the laser radiation.
  • certain orders of the diffraction grating 54 may couple a fraction of the fundamental frequency power of the DFB laser configuration of the device 21 out of the upper surface of the device 21 at predetermined angles.
  • the order of the grating 54 relative to the fundamental frequency at which the device 21 lases determines the fraction of the fundamental power which is "surface emitted", and the angles at which these diffracted beams are emitted.
  • One of the more interesting applications of this "surface-emitting" DFB laser configuration of the device 21 is illustrated in Fig. 5 where the grating 54 is a second-order grating for emitting, as at 55, the fundamental lasing frequency at a near-normal angle with respect the active region 45 of the device 21.
  • the normal or near normal surface emission from the device 21 is highly desirable for applications in which design considerations dictate against the use of an end face emitting laser configuration for extracting optical power from the device 21.
  • the non-linearity of the semiconductor materials within its waveguiding structure 23- 26 causes measurable amounts of second harmonic optical generation.
  • This second harmonic light is of significant interest because it falls within the visible region of the emission spectrum- e.g., at a blue wavelength of 435 nm, if the wavelength of the fundamental laser emission is 870 nm.
  • this second harmonic energy is strongly absorbed by the materials in which it is generated, so it typically is absorbed after traveling only several ten nanometer (hundred ⁇ ngström).
  • the grating 54 of the DFB surface-emitting laser configuration of the device 21 also is an improved means for extracting the internally generated second harmonic light.
  • the grating 54 diffracts out the second harmonic light at angles determined by the wavelength of that harmonic. Since the extraction occurs along the entire length of the laser cavity, the full length of laser contributes to the second harmonic emission, rather than only the last several tens of nm of the cavity near one of its ends.
  • a film 62 composed of a suitable non-linear material, such as KDP, LiNbO2 or Langmuir-Blodgett layers, may be deposited on the outer surface of the upper epitaxial layer 26 of the device 21 in vertically superimposed longitudinal alignment with its active region 45, thereby exposing the full length of the film 62 to the surface-skimming portion of the optical field produced by the laser.
  • a suitable non-linear material such as KDP, LiNbO2 or Langmuir-Blodgett layers
  • Fig. 7 diagrammatically illustrates the multilayer heterostructure of the above-described single channel L-HBT/single quantum well surface-skimming HTJ laser 21 as a function of the percentage of aluminum in each of its epitaxial layers 23-26.
  • Fig. 8 is a similar diagram for an extension of the present invention into the realm of multiple channel L-HBT′s/multiple quantum well HTJ lasers. More particularly, Fig. 8 illustrates the multilayer epitaxial heterostructure of a device 71 having four active layers 72-75 which are buried at depths ranging from about 0.21 ⁇ m to about 0.28 ⁇ m below its outer surface.
  • the upper and lower 40% aluminum burying layers 76 and 77 of the device 71 are separated from its upper and lower active layers 72 and 75 by intermediate layers 78 and 79, respectively, which are composed of an Al 0.2 Ga 0.8 As alloy. Likewise, the same Al 0.2 Ga 0.8 As alloy is used for the barrier layers 81-83 between the active regions 72-75.
  • the 40% aluminum upper burying layer 76 suppresses surface recombination effects, so the 40% aluminum lower burying layer 77 is employed to provide a reasonably well balanced waveguide for the HTJ laser configurations of the device 71.
  • the burying layers 76 and 77 are separated from the active layers 72-75 by the intermediate 20% aluminum layers 78 and 79 to prevent deep level defects, such as the DX center, from degrading the device performance.
  • Fig. 9 is an input current vs. output power curve for a typical surface-skimming multiple quantum well HTJ laser fabricated in the epitaxial layers depicted in Fig. 8, while Fig. 10 illustrates the collector current vs collector-emitter voltage curves for a L-HBT transistor device fabricated in the same set of epitaxial layers.
  • the HTJ laser operated with a forward current threshold of about 5.9 mA for the onset of lasing and had a slope efficiency of approximately 0.5 mW/mA.
  • the L-HBT transistor on the other hand, was found to have current gains in excess of 200 for collector currents in the range of the threshold current of the laser.
  • the laser and transistor configurations of the particular set of epitaxial layers shown in Fig. 8 are very well matched for integrated optoelectronic applications.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)

Claims (11)

  1. Dispositif à hétérostructures semi-conducteurs composés multicouches pour la fabrication de transistors bipolaires à hétérojonction latérale en même temps que de lasers à jonction hétérotransversale, le dispositif comportant au moins une couche active (25) disposée entre une couche de guidage d'onde extérieure (26) et une couche de guidage d'onde intérieure (24) et un moyen pour injecter du courant latéralement dans la couche active, la couche de guidage d'onde extérieure formant une surface externe du dispositif ayant une épaisseur adaptée pour entraîner l'émission laser à l'intérieur de la couche active afin de produire un champ optique d'une intensité importante à la surface externe.
  2. Dispositif selon la revendication 1, dans lequel la profondeur d'enterrement de la couche de guidage d'onde extérieure à partir de sa surface externe à la couche active est inférieure à environ 0,4 µm.
  3. Laser à semi-conducteur composés à jonction hétérotransversale comprenant :
       une couche de guidage d'onde extérieure (26) ayant une interface de surface extérieure avec l'atmosphère ambiante ;
       une couche de guidage d'onde intérieure (24) ;
       au moins une couche active (25) disposée entre les couches de guidage d'onde extérieure et intérieure, et
       une couche de gainage (23) adjacente à la couche de guidage d'onde intérieure.
  4. Laser selon la revendication 3, dans lequel la profondeur d'enterrement de la couche de guidage d'onde extérieure (26) est suffisamment peu profonde pour amener les modes à onde guidée du laser à avoir une intensité optique importante à la surface extérieure, et dans lequel un réseau de diffraction du nième ordre périodique (54) est placé sur la surface extérieure, le réseau de diffraction recouvrant une région active du laser et se prolongeant dans le sens de sa longueur pour procurer une réaction optique distribuée au laser.
  5. Laser selon la revendication 4, comportant de plus un moyen pour extraire la puissance optique du laser par l'intermédiaire du réseau de diffraction.
  6. Laser selon la revendication 4 ou 5, dans lequel le réseau de diffraction est un réseau de diffraction du deuxième ordre pour diffracter la puissance optique de fréquence fondamentale sortie du laser à un angle presque perpendiculaire par rapport à la couche active.
  7. Laser selon la revendication 4 ou 5, dans lequel le réseau de diffraction est adapté pour diffracter la puissance optique de seconde harmonique sortie du laser à un angle prédéterminé suivant fondamentalement la longueur totale de la région active.
  8. Laser selon la revendication 3, comportant de plus un film (62) d'un matériau fortement non linéaire déposé sur la surface extérieure en alignement axial recouvrant une région active du laser, le laser ayant une fréquence d'émission laser fondamentale prédéterminée pour amener le film à émettre la lumière à une seconde harmonique de la fréquence.
  9. Laser à semi-conducteurs composés à jonctions comprenant :
       une couche de guidage d'onde supérieure (26) ayant une surface extérieure qui participe dans le guidage en modes à onde guidée du laser ;
       une couche de guidage d'onde inférieure (24), et
       au moins une couche active (25) disposée entre la couche de guidage d'onde supérieure et la couche de guidage d'onde inférieure ;
       la surface extérieure du guide d'onde étant perturbée (54) pour exercer une influence prédéterminée sur les modes à onde guidée du laser.
  10. En combinaison avec un laser à semi-conducteurs à composés à jonctions hétérotransversales comprenant :
       une couche de guidage d'onde supérieure (26) ayant une surface extérieure qui participe dans le guidage des modes à onde guidée du laser,
       une couche de guidage d'onde inférieure (24), et
       au moins une couche active (25) disposée entre la couche de guidage d'onde supérieure et la couche de guidage d'onde inférieure ;
       un moyen (62) contigu à la surface extérieure de la couche de guidage d'onde supérieure du laser pour interagir optiquement avec les modes à onde guidée du laser.
  11. Dispositif à semi-conducteurs composés à jonctions hétérotransversale selon l'une quelconque des revendications 1 à 10, dans lequel le semi-conducteur composé est constitué d'alliages de GaAs et de AlGaAs.
EP90312999A 1989-11-30 1990-11-29 Hétérostructures semi-conductrices Expired - Lifetime EP0430691B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/443,999 US5038185A (en) 1989-11-30 1989-11-30 Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors
US443999 1989-11-30

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EP0430691A2 EP0430691A2 (fr) 1991-06-05
EP0430691A3 EP0430691A3 (en) 1991-11-21
EP0430691B1 true EP0430691B1 (fr) 1994-06-01

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JP (1) JP2502807B2 (fr)
DE (1) DE69009409T2 (fr)

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US5334854A (en) * 1990-07-11 1994-08-02 Canon Kabushiki Kaisha Optical semiconductor device with wavelength selectivity and method for amplifying or emitting the light using the same
KR940005454B1 (ko) * 1991-04-03 1994-06-18 삼성전자 주식회사 화합물반도체장치
JP3183683B2 (ja) * 1991-09-06 2001-07-09 シャープ株式会社 窓型半導体レーザ素子
US5223704A (en) * 1992-03-31 1993-06-29 At&T Bell Laboratories Planar buried quantum well photodetector
US5216443A (en) * 1992-06-12 1993-06-01 Xerox Corporation Programmable intensity smart laser system capable of being fabricated on a semiconductive substrate
US5497181A (en) * 1992-06-29 1996-03-05 Xerox Corporation Dynamic control of individual spot exposure in an optical output device
US5323026A (en) * 1992-08-03 1994-06-21 Xerox Corporation Semiconductor laser with integrated phototransistor for dynamic power stabilization
US5319655A (en) * 1992-12-21 1994-06-07 Xerox Corporation Multiwavelength laterally-injecting-type lasers
US5301202A (en) * 1993-02-25 1994-04-05 International Business Machines, Corporation Semiconductor ridge waveguide laser with asymmetrical cladding
US5739543A (en) * 1993-11-24 1998-04-14 The Furukawa Electric Co., Ltd. Optical semiconductive device with inplanar compressive strain
US5455429A (en) * 1993-12-29 1995-10-03 Xerox Corporation Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material
US5376583A (en) * 1993-12-29 1994-12-27 Xerox Corporation Method for producing P-type impurity induced layer disordering
US5608753A (en) * 1995-06-29 1997-03-04 Xerox Corporation Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material
US5574745A (en) * 1995-06-29 1996-11-12 Xerox Corporation Semiconductor devices incorporating P-type and N-type impurity induced layer disordered material
US5742631A (en) * 1996-07-26 1998-04-21 Xerox Corporation Independently-addressable monolithic laser arrays
US6002142A (en) * 1996-09-30 1999-12-14 Xerox Corporation Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions
JP2000022206A (ja) * 1998-07-01 2000-01-21 Oki Electric Ind Co Ltd 半導体発光装置
US20050045484A1 (en) * 2003-05-07 2005-03-03 Microfabrica Inc. Electrochemical fabrication process using directly patterned masks
US7545560B2 (en) * 2004-10-08 2009-06-09 Finisar Corporation AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed bragg reflector
JP2008004807A (ja) * 2006-06-23 2008-01-10 Hitachi Ltd ヘテロ接合バイポーラトランジスタ
US20120280224A1 (en) * 2009-06-25 2012-11-08 Georgia Tech Research Corporation Metal oxide structures, devices, and fabrication methods
US9548589B2 (en) 2014-02-28 2017-01-17 Forelux Inc. Grating based optical transmitter
US10386581B2 (en) 2013-10-25 2019-08-20 Forelux Inc. Grating based optical transmitter
US9239507B2 (en) 2013-10-25 2016-01-19 Forelux Inc. Grating based optical coupler
CN104882782B (zh) * 2014-02-28 2020-06-23 光引研创股份有限公司 光发射器
JP2016111131A (ja) * 2014-12-04 2016-06-20 学校法人 名城大学 周期利得活性層を有する窒化物半導体発光素子

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728383A (en) * 1980-07-28 1982-02-16 Toshiba Corp Semiconductor lasre device
US4399542A (en) * 1981-03-02 1983-08-16 Honeywell Inc. Transverse junction stripe laser with distributed Bragg reflectors
NL8101409A (nl) * 1981-03-23 1982-10-18 Philips Nv Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan.
JPS5828887A (ja) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp 半導体レ−ザ
JPS58197789A (ja) * 1982-05-13 1983-11-17 Mitsubishi Electric Corp 半導体レ−ザ
JPS58225682A (ja) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS5929484A (ja) * 1982-08-12 1984-02-16 Fujitsu Ltd 半導体発光装置
US4888624A (en) * 1984-06-15 1989-12-19 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser
EP0199588B1 (fr) * 1985-04-23 1993-09-01 Sharp Kabushiki Kaisha Dispositif laser à semi-conducteur
JPS62158382A (ja) * 1985-12-30 1987-07-14 Ricoh Co Ltd 半導体レ−ザ装置
JPH0779181B2 (ja) * 1987-07-15 1995-08-23 三菱電機株式会社 光集積化素子
JPS6449294A (en) * 1987-08-19 1989-02-23 Mitsubishi Electric Corp Semiconductor laser array device
JP2543551B2 (ja) * 1987-12-28 1996-10-16 キヤノン株式会社 半導体レ―ザ―
US4930132A (en) * 1987-12-28 1990-05-29 Canon Kabushiki Kaisha Second harmonic wave generating device having active layer and second harmonic wave generating layer on same substrate
US4893313A (en) * 1988-03-14 1990-01-09 Kabushiki Kaisha Toshiba Semiconductor laser device which has a double-hetero structure having an optimal layer thickness

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DE69009409D1 (de) 1994-07-07
EP0430691A3 (en) 1991-11-21
JP2502807B2 (ja) 1996-05-29
JPH03173440A (ja) 1991-07-26
EP0430691A2 (fr) 1991-06-05
DE69009409T2 (de) 1994-12-22
US5038185A (en) 1991-08-06

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