EP0399033A1 - Verfahren zur fertigung von halbleiterlasern und mit diesem verfahren hergestellte laser - Google Patents

Verfahren zur fertigung von halbleiterlasern und mit diesem verfahren hergestellte laser

Info

Publication number
EP0399033A1
EP0399033A1 EP90900897A EP90900897A EP0399033A1 EP 0399033 A1 EP0399033 A1 EP 0399033A1 EP 90900897 A EP90900897 A EP 90900897A EP 90900897 A EP90900897 A EP 90900897A EP 0399033 A1 EP0399033 A1 EP 0399033A1
Authority
EP
European Patent Office
Prior art keywords
layer
optical cavity
zones
active medium
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP90900897A
Other languages
English (en)
French (fr)
Inventor
Claude Weisbuch
Baudouin De Cremoux
Jean-Paul Pocholle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of EP0399033A1 publication Critical patent/EP0399033A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Definitions

  • the active medium is placed, as for all lasers, in a resonant optical cavity formed by two reflecting mirrors, at least one of which is partially transparent to allow the light energy stimulated inside the optical cavity to emerge from this cavity.
  • This technique gives good results as regards the production of a laser element on a substrate. It nevertheless has certain drawbacks, essentially of a financial nature, due to the large number of operations it requires, and in terms of size, since it is difficult to produce grooves of very small dimensions which are suitable receiving the materials to constitute the electrodes for supplying electrical energy. It is therefore limited to being able to implant on a substrate of given dimensions only a relatively small number of laser elements, which is inconvenient for obtaining a wide laser beam, both dense and homogeneous.
  • the interdiffusion of the main constituent elements of the axial epi layers More specifically, in this case, it is the process of interdiffusion assisted by the diffusion of impurities, during which the constituent elements of the layers are mixed when the impurities are diffused therein.
  • ⁇ , 100 A thin layers
  • compositions for example: GaAs / AlAs / GaAs / AlAs / ...)

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
EP90900897A 1988-12-09 1989-12-05 Verfahren zur fertigung von halbleiterlasern und mit diesem verfahren hergestellte laser Withdrawn EP0399033A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8816215A FR2640438B1 (fr) 1988-12-09 1988-12-09 Procede de realisation de lasers semi-conducteurs et lasers obtenus par le procede
FR8816215 1988-12-09

Publications (1)

Publication Number Publication Date
EP0399033A1 true EP0399033A1 (de) 1990-11-28

Family

ID=9372768

Family Applications (1)

Application Number Title Priority Date Filing Date
EP90900897A Withdrawn EP0399033A1 (de) 1988-12-09 1989-12-05 Verfahren zur fertigung von halbleiterlasern und mit diesem verfahren hergestellte laser

Country Status (5)

Country Link
US (1) US5055422A (de)
EP (1) EP0399033A1 (de)
JP (1) JPH03502513A (de)
FR (1) FR2640438B1 (de)
WO (1) WO1990006608A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5327448A (en) * 1992-03-30 1994-07-05 The Board Of Trustees Of The University Of Illinois Semiconductor devices and techniques for controlled optical confinement
FR2734097B1 (fr) * 1995-05-12 1997-06-06 Thomson Csf Laser a semiconducteurs
FR2784185B1 (fr) 1998-10-06 2001-02-02 Thomson Csf Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation
FR2811148B1 (fr) 2000-06-30 2006-07-21 Thomson Csf Laser pompe et milieu laser optimise
FR2814281B1 (fr) * 2000-09-19 2003-08-29 Thomson Lcd Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice
JP3928695B2 (ja) * 2001-03-30 2007-06-13 セイコーエプソン株式会社 面発光型の半導体発光装置およびその製造方法
FR2825463B1 (fr) * 2001-05-30 2003-09-12 Thales Sa Gyrometre laser etat solide comportant un bloc resonateur

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3526851A (en) * 1967-07-10 1970-09-01 Rca Corp Filamentary structure injection laser having a very narrow active junction
US3605037A (en) * 1969-05-02 1971-09-14 Bell Telephone Labor Inc Curved junction laser devices
GB1482936A (en) * 1974-10-29 1977-08-17 Standard Telephones Cables Ltd Semiconductor lasers
JPS57192088A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Manufacture of light emitting diode
US4536469A (en) * 1981-11-23 1985-08-20 Raytheon Company Semiconductor structures and manufacturing methods
US4706101A (en) * 1984-10-27 1987-11-10 Kabushiki Kaisha Toshiba Light emitting diode formed of a compound semiconductor material
US4660207A (en) * 1984-11-21 1987-04-21 Northern Telecom Limited Surface-emitting light emitting device
JPH0716073B2 (ja) * 1985-01-22 1995-02-22 東京工業大学長 面発光レ−ザ発振装置
JPS61174686A (ja) * 1985-01-29 1986-08-06 Furukawa Electric Co Ltd:The 面発光型半導体レ−ザ
US4675876A (en) * 1985-02-14 1987-06-23 Northern Telecom Limited Bragg distributed feedback surface emitting laser
JPS61276389A (ja) * 1985-05-31 1986-12-06 Fujitsu Ltd 半導体光素子
GB2203894B (en) * 1987-03-03 1990-11-21 Fumio Inaba Surface emission type semiconductor light-emitting device
JPH01264285A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 面発光型半導体レーザ
JPH0278280A (ja) * 1988-09-14 1990-03-19 Ricoh Co Ltd 半導体発光装置
JPH02128481A (ja) * 1988-11-07 1990-05-16 Nec Corp 発光デバイスの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9006608A1 *

Also Published As

Publication number Publication date
US5055422A (en) 1991-10-08
FR2640438B1 (fr) 1991-01-25
JPH03502513A (ja) 1991-06-06
FR2640438A1 (fr) 1990-06-15
WO1990006608A1 (fr) 1990-06-14

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 19900623

AK Designated contracting states

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Designated state(s): DE GB NL

STAA Information on the status of an ep patent application or granted ep patent

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18D Application deemed to be withdrawn

Effective date: 19930701