Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
  • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
  • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02367—Substrates
  • H01L21/0237—Materials
  • H01L21/02387—Group 13/15 materials
  • H01L21/02395—Arsenides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02436—Intermediate layers between substrates and deposited layers
  • H01L21/02439—Materials
  • H01L21/02455—Group 13/15 materials
  • H01L21/02463—Arsenides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02436—Intermediate layers between substrates and deposited layers
  • H01L21/02494—Structure
  • H01L21/02496—Layer structure
  • H01L21/02505—Layer structure consisting of more than two layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02436—Intermediate layers between substrates and deposited layers
  • H01L21/02494—Structure
  • H01L21/02496—Layer structure
  • H01L21/0251—Graded layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02538—Group 13/15 materials
  • H01L21/02546—Arsenides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/0257—Doping during depositing
  • H01L21/02573—Conductivity type
  • H01L21/02576—N-type

Definitions

• TITLE Opto-electronic semiconductor device
• the present invention relates to a semiconductor opto-electronic device, such as a semiconductor laser.
• High power semiconductor lasers are used in many applications such as telecommunications.
• power in this context is meant the reliable power of the laser, i.e. the power that is able to supply the laser over its operating life (typically 10-15 years). This reliable power is thus generally different from the maximum power.
• the efficiency of the laser defined as the power per unit of injected current, is dependent on two parameters, namely the injection of carriers into the active zone, and the internal losses. Since the parameter relating to the carriers injected into the active zone is already optimized, the increase in efficiency depends on the ability to reduce internal losses in the laser cavity.
• the challenge is then to reduce internal losses to maintain high efficiency and thus use a longer cavity for the laser.
• the laser operates at a lower current density since the injection is distributed over the length of the cavity.
• the temperature of the active zone is also lower because a larger cavity makes it possible to reduce the thermal resistance.
• the conversion efficiency of the laser i.e. the ratio between the optical power generated and the electrical power injected, is also improved.
• the length of laser cavities has therefore continued to increase since the 90s, going from 1.2 to 1.5 millimeters in the 90s to reach 4 to 5 millimeters today.
• An object of the invention is to provide an alternative for continuing to reduce internal losses in semiconductor opto-electronic devices, such as semiconductor lasers, in order to increase the efficiency and reliability of such devices. .
• the subject of the present description is an opto-electronic semiconductor device comprising a junction capable of emitting or absorbing light, the junction being formed of a stack of layers in a stacking direction defining a zone doped N, an intermediate zone and a P-doped zone, at least one layer, called modulated layer, of the N-doped zone or/and of the P-doped zone or/and of the intermediate zone being formed of several stacks of sub-layers , superimposed on each other in the stacking direction, each stack of sub-layers comprising at least two sub-layers, each sub-layer having a thickness in the stacking direction and being made of at least one material, each sub-layer differing from the other sub-layers of the same stack by at least one characteristic of at least one material of the sub-layer, called distinctive characteristic, each stack of a modulated layer being identical to the stack on previous stack or differing at most from the previous superimposed stack by a limited variation of the composition of at least one material of two corresponding sub-
• the device comprises one or more of the following characteristics, taken individually or in all technically possible combinations:
• the modulated layer is a layer of the N-doped zone or of the P-doped zone, the junction being a PIN junction and the intermediate zone being an intrinsic zone;
• the modulated layer is a layer of the N-doped zone or of the P-doped zone, each of the N-doped zone and of the P-doped zone comprising a core and a cladding, the optical index of the core being greater than the index cladding, the modulated layer being a layer of the core or of the cladding of the corresponding doped zone, advantageously each of the core and of the cladding of the doped zone in question comprising a modulated layer;
• the at least one distinctive characteristic is the doping rate of the at least one material of the underlayer
• the doping rate of each sub-layer differs from the doping rate of the other sub-layers of the same stack by at least one percent;
• the average of the doping rate of the modulated layer is less than or equal to the doping rate of the corresponding non-modulated layer
• the doping rate of one of the sub-layers of each stack is the residual doping rate of at least one material in which the sub-layer is made;
• each sub-layer of a stack having a doping rate higher than the doping rate of another sub-layer of the stack has a thickness less than the thickness of said other sub-layer
• the at least one distinctive characteristic is the composition of the at least one material of the underlayer
• each sub-layer comprises chemical elements belonging to columns III and V or II and VI or IV of the periodic table;
• each stack of sub-layers is between 1 nanometer and 100 nanometers, preferably is greater than or equal to 5 nanometers, advantageously greater than or equal to 10 nanometers.
• each stack of sub-layers is chosen so as to reduce the absorption of photons by free carriers in the corresponding zone with respect to the reference electronic device.
• the modification of the electro-optical properties of the conduction band or/and of the valence band is suitable for redistributing the oscillator force of the parasitic intra-band transition, at the origin of the absorption of photons by the free carriers, differently between the different polarizations of the photons circulating in the opto-electronic device, and in particular to transfer most of the oscillator force of the intra-band transition to the polarization orthogonal to the polarization of the laser emission.
• each sub-layer of each stack is devoid of gallium nitride.
• the present description also relates to an opto-electronic semiconductor device comprising a PIN junction suitable for emitting or absorbing light, the PIN junction being formed of a stack of layers in a stacking direction defining an N-doped zone, an intrinsic zone and a P-doped zone, at least one layer of one of the N-doped zone and of the P-doped zone, called the modulated layer, being formed of several stacks of sub-layers, superimposed on each other in the stacking direction, each stack of sub-layers comprising at least two sub-layers, each sub-layer having a thickness in the stacking direction and being made of at least one material, each sub-layer differing from the other sub-layers layers of the same stack by at least one characteristic of at least one material of the sub-layer, called a distinctive characteristic, each stack of a modulated layer being identical to the previous superimposed stack or differing nt at most of the previous superimposed stack by a limited variation of the composition of at least one material of two corresponding sub
• FIG 1 figure 1, a schematic sectional view of an example of a semiconductor laser according to a first example of implementation
• Figure 2 a schematic sectional view of an example of a semiconductor laser according to a second example of implementation
• FIG. 3 a schematic sectional view of an example of a semiconductor laser according to a third example of implementation.
• a longitudinal direction is defined.
• a stacking direction and a transverse direction are also defined.
• the stacking direction is a direction perpendicular to the longitudinal direction and contained in a plane transverse to the longitudinal direction.
• the stacking direction is perpendicular to the direction of propagation of the light, called longitudinal.
• the transverse direction is perpendicular to the longitudinal direction and to the stacking direction.
• the longitudinal, stacking and transverse directions are respectively symbolized by a Y axis, a Z axis and an X axis in figures 1 to 3.
• a semiconductor laser 10 comprising a PIN junction 12 capable of emitting or absorbing light
• the laser is preferably a high-power laser, that is to say capable of emitting or absorbing a laser beam having a power greater than 500 milliwatts (mW).
• the laser cavity has a length greater than 3 millimeters (mm) and less than 10 mm.
• Such a laser is, for example, suitable for use in the field of telecommunications, such as in an erbium-doped fiber amplifier.
• the laser is a GaAs (Gallium Arsenide) type laser emitting at 980 nm.
• the PIN junction 12 is formed by a stack of layers in the stacking direction Z.
• Each layer of the stack is a planar layer, i.e. the layer extends between two flat and parallel faces.
• Each layer also has a thickness in the Z stacking direction.
• the thickness of a layer is defined as the distance between the two faces of the layer in the Z stacking direction.
• the layers of the stack define an N-doped zone, an intrinsic I-doped zone and a P-doped zone. electrons.
• intrinsic zone is understood to mean a zone in which no impurity has been deliberately introduced, this intrinsic zone being the active zone of the PIN junction 12.
• the intrinsic zone I is a zone in which light is generated by recombination of electron-hole pairs.
• P-doped zone is meant a zone in which impurities have been introduced so as to produce an excess of holes.
• Each of the N-doped zone and the P-doped zone comprises a core and a cladding, the optical index of the core being greater than the optical index of the cladding, allowing the formation of a waveguide.
• the core of each doped zone and the sheath of each doped zone corresponds to one or more distinct layers of the stack.
• FIGS. 1 to 3 are examples illustrating the stack of layers forming the PIN junction 12. In these examples, the layers forming the stack are superposed in the stacking direction Z on a substrate 14.
• the zone N-doped is denoted ZN, the intrinsic zone Zi and the P-doped zone Zp.
• the core of the N-doped zone is denoted C N , that of the P-doped zone Cp, the sheath of the N-doped zone is denoted GN and that of the P-doped zone Gp.
• the substrate 14 is made of
• At least one layer of one of the N-doped zone and of the P-doped zone is formed of several stacks of sub-layers in the stacking direction Z.
• at least one modulated layer is a layer among the layers of the N-doped region and the P-doped region.
• Each stack of sub-layers comprises at least two superimposed sub-layers in the stacking direction Z.
• Each stack of sub-layers can be assimilated to a pattern repeated as many times as the number of stacks of sub-layers.
• the modulated layer is a layer of the core or of the cladding of the doped zone considered.
• the doped zone considered comprises at least one modulated layer belonging to the core and one modulated layer belonging to the cladding.
• FIG. 1 illustrates an example in which only the N-doped zone comprises modulated layers, namely a modulated layer forming the core and a modulated layer forming the cladding of the N-doped zone.
• FIG. 2 illustrates an example in which only the zone P-doped layer comprises a modulated layer, namely a modulated layer forming the core and a modulated layer forming the cladding of the P-doped zone.
• FIG. 3 illustrates an example in which each of the N-doped zone and the P-doped zone comprises modulated layers (one modulated layer for each of the core and cladding of the P and N doped areas).
• the stacks of sub-layers are superimposed on each other in the stacking direction Z so that the thickness of all the stacks of sub-layers (sum of the thicknesses of the sub-layers forming the stack) is equal to the thickness of the modulated layer.
• the number of stacks of sub-layers forming a modulated layer is greater than or equal to 10.
• the total thickness of the modulated layer is typically between 10 nm and 10 ⁇ m, when the thickness of each stack of sub-layers is between 1 nanometer and 100 nanometer.
• Each sub-layer is a planar sub-layer, that is to say that the sub-layer extends between two flat and parallel faces.
• Each sub-layer has a thickness in the stacking direction Z.
• the thickness of a sub-layer is defined as the distance between the two faces of the sub-layer in the stacking direction Z.
• the thickness of each sub-layer is strictly less than the thickness of the corresponding modulated layer.
• the thickness of each sub-layer is greater than or equal to 1 nanometer (nm) and less than or equal to 100 nm.
• the thickness of each stack of sub-layers is between 1 nanometer and 100 nanometer.
• Each sub-layer is made of at least one material.
• the at least one material of each sub-layer consists of several chemical elements.
• a chemical element is an element of Mendeleev's table.
• the elements belong to columns III and V or II and VI or IV of the periodic table.
• the material is Aluminum Gallium Arsenide (AIGaAs) or Indium Phosphide (InP) or its alloys InGaAsP or InGaAlAs.
• each sub-layer is made of a single material.
• at least one sub-layer is made of several materials, the materials being made up of the same chemical elements but differing in the composition (proportion) of chemical elements.
• Each sub-layer differs from the other sub-layers of the same stack by at least one characteristic of at least one material of the sub-layer, called a distinctive characteristic.
• the distinguishing characteristics are at least one of the doping rate of the material of each sub-layer and the composition of the material of the sub-layer.
• the doping level is defined as the number of doping impurities (electron donors or acceptors) in one cubic centimeter of the crystal lattice.
• the doping rate is volumetric.
• the composition is defined as being the proportion of the chemical elements constituting the material.
• the two materials have the same composition but a different doping rate
• the two materials have the same doping rate but a different composition
• the two materials have a different doping rate and a different composition.
• the stacks forming a modulated layer are identical.
• each stack of a modulated layer is identical to the previous superimposed stack.
• the previous stack is the stack on which the considered stack is superimposed.
• At least one stack differs from the other stacks.
• each stack preferably differs at most from the preceding superimposed stack by a limited variation in the composition of the at least one material of each sub-layer of the stack with respect to the composition of the at least one material of the corresponding sub-layers of the previous superposed stack (ie the or at least one material of two corresponding sub-layers of two stacks have different compositions).
• the number of sub-layers, the thickness of the sub-layers, the chemical elements of the materials of the sub-layers and the doping rates are identical.
• the composition of a material of a sub-layer of a stack is increased or decreased (by a given value included in the bounded variation) compared to that of the corresponding sub-layer of the previous stack.
• corresponding sub-layer it is understood the sub-layer of the other stack having the same position in the other stack as the sub-layer of the stack considered.
• the sub-layer of the first stack closest to the base of the first stack is compared with the sub-layer of the second stack closest to the base of the second stack, and so on for the other sub-layers.
• the compositions of the materials of the two sub-layers of the two stacks considered differ from each other by a percentage included in a range of predetermined values.
• the variation in composition is between 0 and 2 percent.
• the variation is preferably gradual over the thickness of the modulated layer, that is to say leads to an increase or a decrease in the overall composition over the thickness of the modulated layer.
• the modulated layer comprises three superposed stacks each formed of two sub-layers.
• the distinguishing feature is the material composition of the underlays.
• the first stack and the second stack are identical and include: a first sub-layer in Alo , 2sGao , 72As 10 nm thick having a doping rate (Si atoms) of 5.10 16 cm -3 , and a second sub-layer in Alo , 32Gao , 68As 20 nm thick thickness having a doping level (Si atoms) of 5.10 16 cm -3 .
• the third stack comprises: a first sub-layer in Alo , 29Gao , 7iAs 10 nm thick having a doping rate (Si atoms) of 5.10 16 cm -3 , and a second sub-layer in Alo , 33Gao , 67As 20 nm thick with a doping level (Si atoms) of 5.10 16 cm -3 .
• the third stack of this example therefore has a variation (of 0.01) in the composition of the material of its sub-layers with respect to the corresponding sub-layers of the first and second stack.
• the thicknesses and the distinctive characteristics of the sub-layers are chosen so as to reduce the absorption of photons in the corresponding doped zone compared to a semiconductor laser, known as a reference.
• Such absorption of photons is a parasitic phenomenon due to the absorption of photons coming from the active zone by the free carriers (holes or electrons) of a doped zone. This phenomenon is also called free-carrier absorption.
• the reference laser only differs from the considered laser in that each modulated layer is replaced by an unmodulated layer.
• the unmodulated layer has the same thickness as the corresponding modulated layer and has identical characteristics except for the distinguishing characteristic which is uniform (within the limits of the technologies used) or varies gradually over the thickness of the unmodulated layer. modulated.
• the value of the distinctive characteristic is the same over the thickness of the non-modulated layer.
• the doping rate of the material of the non-modulated layer has the same value over the thickness of the non-modulated layer.
• the material composition of the unmodulated layer is the same throughout the thickness of the unmodulated layer.
• the absorption of photons in the doped zone considered is quantified by carrying out a regression of the external efficiencies of lasers of lengths different, depending on this same cavity length. Such a regression is described for example in the book entitled “Diode Lasers and Photonic Integrated Circuits.” Chap. 2 (1995) by Coldren, L. et al.
• the absorption of photons in the zone considered is reduced by at least 0.1 cm ⁇ 1 with respect to the reference laser.
• the PIN junction 12 has been obtained exclusively by epitaxy from the substrate 14.
• epitaxy is understood to mean a technique for growing a crystal on another crystal, each crystal comprising a crystal lattice having a a number of common symmetry elements with the other crystal.
• the epitaxy technique used is, for example, chosen from among: molecular beam epitaxy, liquid phase epitaxy and organo-metallic vapor phase epitaxy.
• the production of a modulated layer formed of an alternation of specific repeating sub-layers makes it possible to modify the absorption of photons by the free carriers of the doped zones. considered, and thus reduce internal losses.
• the structure of the modulated layer makes it possible to modify the electro-optical properties of the conduction band when the modulated layer belongs to the N-doped zone and in the valence band when the modulated layer belongs to the doped zone. P. This modification is one of the factors contributing to inhibit the absorption of photons by the free carriers of the doped zones considered.
• SR doping superlattice structure
• the doping rate of each sub-layer differs from the doping rate of the other sub-layers of the same stack by at least one percent.
• the average of the doping rate of the modulated layer (obtained from the doping rate of the sub-layers taking into account their thicknesses) is less than or equal to the doping rate of the corresponding non-modulated layer (of the laser reference).
• the structure with repeated stacks of sub-layers makes it possible to reduce the average doping level compared to a layer having the same doping level over its thickness.
• the doping level of one of the sub-layers of each stack is the residual doping level of the material in which the sub-layer is made.
• the residual doping level is the doping level obtained even though no impurity has been deliberately introduced into the material.
• the modulated layer is formed by a repeated alternation over the thickness of the modulated layer, of a doped sub-layer and of a doping sub-layer intrinsic.
• each sub-layer of a stack having a doping level higher than the doping level of another sub-layer of the same stack has a thickness less than the thickness of said other sub-layer.
• a GaAs laser structure at 980 nm was produced according to two variants, namely:
• the N-doped zone comprises:
• a second non-modulated layer forming the core with a thickness of 900 nm with a doping level (Si atoms) constant at 5.10 16 cm -3 and an AIGaAs material matrix.
• Each sublayer stack includes two sublayers.
• the first sub-layer of each stack has a thickness of 10 nm and a doping rate (Si atoms) constant at 6.10 16 cm -3 and the second sub-layer of each stack has a thickness of 20 nm and a rate of doping (Si atoms) constant at 2.5 ⁇ 10 16 cm -3 (residual level of doping in the material).
• the first modulated layer (sheath) is formed of 100 stacks (3 ⁇ m thick and 30 nm thick per stack) and the second modulated layer (core) is formed of 30 stacks.
• the SE yield obtained is 0.460 W/A with a standard structure, and is 0.494 W/ A with a modified structure (under layers).
• the increase in laser efficiency is about 7%.
• This increase in SE efficiency thus shows that the structure in sub-layers makes it possible to reduce internal losses.
• this first realization was made on lasers with a cavity of length 3.9 mm.
• the increase in yield is expected at higher values for longer cavity lasers, reasonably up to maximum lengths of 8–10 mm. For these cavities, it is estimated that the increase in yield could reach 10 to 11%.
• the modulated layer comprises identical stacks of the following sub-layers each comprising: a first InP sub-layer 15 nm thick having a doping level (Si atoms) of 6.10 16 cm -3 , and a second InP sub-layer 30 nm thick having a doping level (Si atoms) of 3 ⁇ 10 16 cm ⁇ 3 .
• the modulated layer comprises identical stacks of the following sub-layers each comprising: a first sub-layer in Alo , 2sGao , 72As 10 nm thick having a doping rate (Si atoms) of 5.10 16 cm -3 , and a second Alo , 32Gao , 68As sub-layer 20 nm thick with a doping rate (Si atoms) of 5.10 16 cm -3 .
• the modulated layer comprises identical stacks of the following sub-layers each comprising: a first sub-layer in Alo , 2sGao , 72As 10 nm thick having a doping rate (Si atoms) of 6.10 16 cm ⁇ 3 , and a second Alo , 32Gao , 68As sub-layer 20 nm thick having a doping level (Si atoms) of 2.5 ⁇ 10 16 cm 3 .
• the modulated layer comprises identical stacks of the following sub-layers each comprising: a first sub-layer in Alo , 2sGao , 72As 10 nm thick having a doping rate (Si atoms) of 6.10 16 cm -3 , a second sub-layer in Alo , 32Gao , 68As 20 nm thick with a doping rate (Si atoms) of 2.5.10 16 cm -3 , and a third sub-layer in Alo , 3Gao , 7As 10 nm thick having a doping rate (Si atoms) of 4.10 16 cnr 3
• the laser structure described makes it possible, by a periodically repeated alternation of sub-layers having different characteristics (doping rate and/or composition), to reduce the internal losses due to the absorption of photons by the free carriers of the doped zones. of the PIN junction. This, in turn, increases efficiency and reliability. of the laser. Furthermore, a significant reduction in internal losses can make it possible to increase, in addition to the purely optical efficiency of the laser, the total conversion efficiency of the component, expressed as the ratio of the total optical power emitted by the laser P opt normalized to the total electrical power injected into the laser and which is equal to the product IxV (product of the current injected into the laser and the voltage required to inject it).
• the modification of the electro-optical properties of the conduction band or/and of the valence band makes it possible to redistribute the oscillator strength of the parasitic intra-band transition (at the origin of the absorption of photons by the free carriers) differently between the different photon polarizations (circulating in the laser cavity of the opto-electronic device), and particularly to transfer the major part (if not all) of the oscillator force of the intra-transition band on the polarization orthogonal to that of the laser emission. This makes it possible to almost completely decouple the laser emission from the transition responsible for the absorption by free carriers.
• the modulated layer when the modulated layer is either in the N-doped zone or in the P-doped zone, but not both at the same time, the modulated layer does not confer a beneficial effect for the reduction of absorption. of photons by the free carriers, than in the conduction band for a modulated layer in the N-doped zone or than in the valence band for a modulated layer in the P-doped zone.
• the electro-optical properties of the conduction band and valence band are generally modified by the modulated layer in both cases, in particular because the material has a quasi-two-dimensional character.
• the modification of the electro-optical properties of the conduction band and the valence band occurs by the production of a quasi-2D modulated layer (the doping and/or composition superlattice), therefore essentially two-dimensional which generates discrete subbands in the conduction and valence bands.
• the selection rules and the distribution of the oscillator forces of the intra-band transitions for the different polarizations are advantageously different with respect to an isotropic three-dimensional material not possessing this specific structure (the fact that the material is isotropic implies that the oscillator strengths are the same along the three directions).
• the thickness of each stack of sub-layers is preferably also chosen so as to reduce the absorption of photons by free carriers in the zone corresponding doped with respect to the reference electronic device.
• each modulated layer is different from a short-period superlattice (in English “Short Period Superlattice” abbreviated as SPSL).
• each sub-layer of each stack is devoid of gallium nitride (GaN).
• the modulated layer is at least one layer of the core of the corresponding doped zone.
• the opto-electronic device described is particularly suitable for III-V semiconductors with a crystalline structure of the so-called 'diamond' type or with a 'blende' structure.
• the modulated layer described previously is also applicable to an opto-electronic semiconductor device comprising a junction formed from a stack of layers in a stacking direction defining an N-doped zone, an intermediate zone (between the N-doped zone and the P-doped zone) and a P-doped zone.
• the modulated layer is a layer belonging to the intermediate zone, and for example more precisely to the active zone (zone where a takes place the recombination of charge carriers).
• the modulated layer is for example a layer of the active zone (isotropic) of a Double Heterostructure (DH) laser of sufficient thickness to integrate several periods of modulation of the distinctive characteristic.
• the thickness considered is, for example, greater than or equal to 100 nm.
• the intermediate zone in the case where the distinctive characteristic is a composition of a material, can be an intrinsic zone.
• the distinctive characteristic is a doping rate
• the intermediate zone is different from an intrinsic zone (since it is doped via the modulated layer).
• the doping is of N type and/or of P type.
• Such an alternative embodiment is moreover compatible with the integration of other modulated layers in the N-doped zone and/or the P-doped zone.

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  • 2022-03-04 WO PCT/EP2022/055527 patent/WO2022184886A1/fr active Application Filing
  • 2022-03-04 KR KR1020237032118A patent/KR20230161444A/ko unknown

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