EP0378782A3 - Ionenimplantationsanlage zum gleichmässigen Einschuss eines Ionenstrahls in ein Substrat - Google Patents

Ionenimplantationsanlage zum gleichmässigen Einschuss eines Ionenstrahls in ein Substrat Download PDF

Info

Publication number
EP0378782A3
EP0378782A3 EP19890121435 EP89121435A EP0378782A3 EP 0378782 A3 EP0378782 A3 EP 0378782A3 EP 19890121435 EP19890121435 EP 19890121435 EP 89121435 A EP89121435 A EP 89121435A EP 0378782 A3 EP0378782 A3 EP 0378782A3
Authority
EP
European Patent Office
Prior art keywords
substrate
ion beam
implantation apparatus
ion
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19890121435
Other languages
English (en)
French (fr)
Other versions
EP0378782B1 (de
EP0378782A2 (de
Inventor
Tadamoto Tamai
Junichi Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ion Technology Co Ltd
Original Assignee
Sumitomo Eaton Nova Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Eaton Nova Corp filed Critical Sumitomo Eaton Nova Corp
Publication of EP0378782A2 publication Critical patent/EP0378782A2/de
Publication of EP0378782A3 publication Critical patent/EP0378782A3/de
Application granted granted Critical
Publication of EP0378782B1 publication Critical patent/EP0378782B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
EP89121435A 1988-11-21 1989-11-20 Ionenimplantationsanlage zum gleichmässigen Einschuss eines Ionenstrahls in ein Substrat Expired - Lifetime EP0378782B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP292507/88 1988-11-21
JP63292507A JP2717822B2 (ja) 1988-11-21 1988-11-21 イオン注入装置

Publications (3)

Publication Number Publication Date
EP0378782A2 EP0378782A2 (de) 1990-07-25
EP0378782A3 true EP0378782A3 (de) 1991-01-23
EP0378782B1 EP0378782B1 (de) 1994-06-29

Family

ID=17782713

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89121435A Expired - Lifetime EP0378782B1 (de) 1988-11-21 1989-11-20 Ionenimplantationsanlage zum gleichmässigen Einschuss eines Ionenstrahls in ein Substrat

Country Status (6)

Country Link
US (1) US5030835A (de)
EP (1) EP0378782B1 (de)
JP (1) JP2717822B2 (de)
KR (1) KR0164841B1 (de)
AT (1) ATE107968T1 (de)
DE (1) DE68916529T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8922225D0 (en) * 1989-10-03 1989-11-15 Superion Ltd Apparatus and methods relating to ion implantation
US5633506A (en) * 1995-07-17 1997-05-27 Eaton Corporation Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
JP3064269B2 (ja) * 1998-10-30 2000-07-12 アプライド マテリアルズ インコーポレイテッド イオン注入装置及びイオン注入方法
KR100298587B1 (ko) * 1999-11-22 2001-11-05 윤종용 이온 주입 장치
DE10115912A1 (de) * 2001-03-30 2002-10-17 Infineon Technologies Ag Verfahren zur Herstellung einer Halbleiteranordnung und Verwendung einer Ionenstrahlanlage zur Durchführung des Verfahrens
DE10219123B4 (de) * 2002-04-29 2004-06-03 Infineon Technologies Ag Verfahren zur Strukturierung keramischer Schichten auf Halbleitersubstanzen mit unebener Topographie
KR100769254B1 (ko) * 2006-04-28 2007-10-23 한국원자력연구원 이온빔 균일 조사용 정렬 지그 및 이를 이용한 녹즙기 기어표면 개질 방법
DE102011106044A1 (de) * 2011-06-27 2012-12-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur gezielten Einstellung einer Tropfenkondensation auf einer Oberfläche eines Substrats mittels Ionenimplantation
CN103928282B (zh) * 2014-05-06 2016-03-16 武汉大学 一种离子注入样品台

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733087A (en) * 1985-07-01 1988-03-22 Hitachi, Ltd. Ion beam treating apparatus
US4745287A (en) * 1986-10-23 1988-05-17 Ionex/Hei Ion implantation with variable implant angle

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4405864A (en) * 1981-09-08 1983-09-20 Rca Corporation Ion implanter end processing station
JPS59184443A (ja) * 1983-04-01 1984-10-19 Hitachi Ltd イオン打込装置
JPS6276147A (ja) * 1985-09-28 1987-04-08 Nec Kansai Ltd イオン注入装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733087A (en) * 1985-07-01 1988-03-22 Hitachi, Ltd. Ion beam treating apparatus
US4745287A (en) * 1986-10-23 1988-05-17 Ionex/Hei Ion implantation with variable implant angle

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NUCLEAR INSTRUM. & METHODS IN PHYS. RES./B, vol. B37/38, no. 2, 2nd February 1989, pages 620-623, Amsterdam, NL; Y. TAMURA et al.: "production implanter nissin NH-20SR" *

Also Published As

Publication number Publication date
DE68916529D1 (de) 1994-08-04
KR0164841B1 (ko) 1999-01-15
US5030835A (en) 1991-07-09
ATE107968T1 (de) 1994-07-15
JPH02139846A (ja) 1990-05-29
EP0378782B1 (de) 1994-06-29
JP2717822B2 (ja) 1998-02-25
KR900008625A (ko) 1990-06-04
DE68916529T2 (de) 1994-10-20
EP0378782A2 (de) 1990-07-25

Similar Documents

Publication Publication Date Title
EP0398190A3 (de) Ionenimplantationsgerät und sein Steuerungsverfahren
EP0378782A3 (de) Ionenimplantationsanlage zum gleichmässigen Einschuss eines Ionenstrahls in ein Substrat
EP0392868A3 (de) Verfahren zum Herstellen einer Platte für die Kontrolle der Streuung des Lichtes in verschiedene Richtungen
CZ124092A3 (en) Process for preparing optically active (2s) or (2r)-endobicyclo-2.2.1-hepan-2-ole
AU3893489A (en) Selectable aperture module
GB2196155B (en) Control apparatus for energy beam hardening
CA2037703A1 (en) Laser curing of contact lens
CA2099685A1 (en) Focused Ion Beam Implantation Apparatus
EP0377298A3 (de) Einen Ionenstrahl mit gleichmässigem Querschnitt verwendende Vorrichtung
CA2063935A1 (en) Denture curing apparatus and method
EP0204538A3 (de) Photobehandlungsverfahren und Vorrichtung dafür
EP0172635A3 (de) Temperaturkontrolle im Vakuum
CA2129403A1 (en) Ion Implanting Apparatus and Ion Implanting Method
EP0396875A3 (de) Verfahren und Vorrichtung zur Stabilisierung der Frequenz eines Halbleiterlasers
EP0301791A3 (en) Light beam control arrangements for optical disc apparatus
AU629577B2 (en) Method for the stimulation of bone marrow cells
AU591254B2 (en) Control system for inclined impact-type surface seismic source
JPS5642248A (en) Light source device
JPS53119671A (en) Ion implanting method
EP0409396A3 (en) Process for producing light control plate having light-scattering pervious region
DK53488D0 (da) Cytochrom-p-450-enzymer samt fremgangsmaade til fremstilling heraf
AU625165B2 (en) Process for improving the adhesiveness of the surface of bodies fabricated from polymeric material, and so obtained fabricated bodies
AU7414891A (en) Process for the sterilisation of contaminated waste and device for carrying out the same
JPS6441900A (en) X-ray exposure system
KR0133563B1 (en) Method of and device for scanning carrier

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE CH DE ES FR GB GR IT LI LU NL SE

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE CH DE ES FR GB GR IT LI LU NL SE

17P Request for examination filed

Effective date: 19910417

17Q First examination report despatched

Effective date: 19920825

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE CH DE ES FR GB GR IT LI LU NL SE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CH

Effective date: 19940629

Ref country code: LI

Effective date: 19940629

Ref country code: NL

Effective date: 19940629

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 19940629

Ref country code: BE

Effective date: 19940629

Ref country code: ES

Free format text: THE PATENT HAS BEEN ANNULLED BY A DECISION OF A NATIONAL AUTHORITY

Effective date: 19940629

Ref country code: AT

Effective date: 19940629

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 19940629

REF Corresponds to:

Ref document number: 107968

Country of ref document: AT

Date of ref document: 19940715

Kind code of ref document: T

REF Corresponds to:

Ref document number: 68916529

Country of ref document: DE

Date of ref document: 19940804

ET Fr: translation filed
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Effective date: 19940929

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19941130

NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

REG Reference to a national code

Ref country code: FR

Ref legal event code: CD

Ref country code: FR

Ref legal event code: CA

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20081124

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20081230

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20081028

Year of fee payment: 20

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

Expiry date: 20091119

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20091119