EP0378782A3 - Ionenimplantationsanlage zum gleichmässigen Einschuss eines Ionenstrahls in ein Substrat - Google Patents

Ionenimplantationsanlage zum gleichmässigen Einschuss eines Ionenstrahls in ein Substrat Download PDF

Info

Publication number
EP0378782A3
EP0378782A3 EP19890121435 EP89121435A EP0378782A3 EP 0378782 A3 EP0378782 A3 EP 0378782A3 EP 19890121435 EP19890121435 EP 19890121435 EP 89121435 A EP89121435 A EP 89121435A EP 0378782 A3 EP0378782 A3 EP 0378782A3
Authority
EP
European Patent Office
Prior art keywords
substrate
ion beam
implantation apparatus
ion
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19890121435
Other languages
English (en)
French (fr)
Other versions
EP0378782B1 (de
EP0378782A2 (de
Inventor
Tadamoto Tamai
Junichi Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ion Technology Co Ltd
Original Assignee
Sumitomo Eaton Nova Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Eaton Nova Corp filed Critical Sumitomo Eaton Nova Corp
Publication of EP0378782A2 publication Critical patent/EP0378782A2/de
Publication of EP0378782A3 publication Critical patent/EP0378782A3/de
Application granted granted Critical
Publication of EP0378782B1 publication Critical patent/EP0378782B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
EP89121435A 1988-11-21 1989-11-20 Ionenimplantationsanlage zum gleichmässigen Einschuss eines Ionenstrahls in ein Substrat Expired - Lifetime EP0378782B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP292507/88 1988-11-21
JP63292507A JP2717822B2 (ja) 1988-11-21 1988-11-21 イオン注入装置

Publications (3)

Publication Number Publication Date
EP0378782A2 EP0378782A2 (de) 1990-07-25
EP0378782A3 true EP0378782A3 (de) 1991-01-23
EP0378782B1 EP0378782B1 (de) 1994-06-29

Family

ID=17782713

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89121435A Expired - Lifetime EP0378782B1 (de) 1988-11-21 1989-11-20 Ionenimplantationsanlage zum gleichmässigen Einschuss eines Ionenstrahls in ein Substrat

Country Status (6)

Country Link
US (1) US5030835A (de)
EP (1) EP0378782B1 (de)
JP (1) JP2717822B2 (de)
KR (1) KR0164841B1 (de)
AT (1) ATE107968T1 (de)
DE (1) DE68916529T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8922225D0 (en) * 1989-10-03 1989-11-15 Superion Ltd Apparatus and methods relating to ion implantation
US5633506A (en) * 1995-07-17 1997-05-27 Eaton Corporation Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
JP3064269B2 (ja) * 1998-10-30 2000-07-12 アプライド マテリアルズ インコーポレイテッド イオン注入装置及びイオン注入方法
KR100298587B1 (ko) * 1999-11-22 2001-11-05 윤종용 이온 주입 장치
DE10115912A1 (de) * 2001-03-30 2002-10-17 Infineon Technologies Ag Verfahren zur Herstellung einer Halbleiteranordnung und Verwendung einer Ionenstrahlanlage zur Durchführung des Verfahrens
DE10219123B4 (de) * 2002-04-29 2004-06-03 Infineon Technologies Ag Verfahren zur Strukturierung keramischer Schichten auf Halbleitersubstanzen mit unebener Topographie
KR100769254B1 (ko) * 2006-04-28 2007-10-23 한국원자력연구원 이온빔 균일 조사용 정렬 지그 및 이를 이용한 녹즙기 기어표면 개질 방법
DE102011106044A1 (de) * 2011-06-27 2012-12-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur gezielten Einstellung einer Tropfenkondensation auf einer Oberfläche eines Substrats mittels Ionenimplantation
CN103928282B (zh) * 2014-05-06 2016-03-16 武汉大学 一种离子注入样品台

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733087A (en) * 1985-07-01 1988-03-22 Hitachi, Ltd. Ion beam treating apparatus
US4745287A (en) * 1986-10-23 1988-05-17 Ionex/Hei Ion implantation with variable implant angle

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4405864A (en) * 1981-09-08 1983-09-20 Rca Corporation Ion implanter end processing station
JPS59184443A (ja) * 1983-04-01 1984-10-19 Hitachi Ltd イオン打込装置
JPS6276147A (ja) * 1985-09-28 1987-04-08 Nec Kansai Ltd イオン注入装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733087A (en) * 1985-07-01 1988-03-22 Hitachi, Ltd. Ion beam treating apparatus
US4745287A (en) * 1986-10-23 1988-05-17 Ionex/Hei Ion implantation with variable implant angle

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NUCLEAR INSTRUM. & METHODS IN PHYS. RES./B, vol. B37/38, no. 2, 2nd February 1989, pages 620-623, Amsterdam, NL; Y. TAMURA et al.: "production implanter nissin NH-20SR" *

Also Published As

Publication number Publication date
DE68916529D1 (de) 1994-08-04
KR0164841B1 (ko) 1999-01-15
US5030835A (en) 1991-07-09
ATE107968T1 (de) 1994-07-15
JPH02139846A (ja) 1990-05-29
EP0378782B1 (de) 1994-06-29
JP2717822B2 (ja) 1998-02-25
KR900008625A (ko) 1990-06-04
DE68916529T2 (de) 1994-10-20
EP0378782A2 (de) 1990-07-25

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