EP0371894A1 - Dampf- und Ionenquelle - Google Patents
Dampf- und Ionenquelle Download PDFInfo
- Publication number
- EP0371894A1 EP0371894A1 EP89420467A EP89420467A EP0371894A1 EP 0371894 A1 EP0371894 A1 EP 0371894A1 EP 89420467 A EP89420467 A EP 89420467A EP 89420467 A EP89420467 A EP 89420467A EP 0371894 A1 EP0371894 A1 EP 0371894A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- cathode
- cavity
- ion source
- opening
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002500 ions Chemical class 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000012159 carrier gas Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
- H05H3/02—Molecular or atomic beam generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
Definitions
- the present invention relates to a source of vapors and ions, and in particular a source of vapors and metal ions.
- an object of the present invention is to provide another type of vapor and ion source of particularly simple structure and with a long service life.
- the present invention provides a source of vapors and ions comprising, in a low-pressure enclosure, an anode (ground), a cathode and means for applying a magnetic field, the cathode being constituted an equipotential cavity provided with an opening, a magnetic field being applied orthogonally to the plane of the opening and the material to be ionized being placed in the cathode cavity.
- the present invention provides for using a cathode 10 provided with an internal cavity and an outlet opening 11.
- This cathode is enclosed in an enclosure, for example a conductive enclosure M to ground that hereinafter sometimes called mass sometimes anode since it constitutes an anode with respect to the cathode 10.
- This enclosure is provided with pumping means 13 and means 14 for introducing a gas, this gas being for example helium, argon, etc.
- a magnet or other means for applying a magnetic field A is provided for applying a magnetic field B at the opening 11 of the cathode orthogonally to the plane of the latter.
- a material to be ionized for example a metal 15 in the form of powder, bars, chips, etc.
- the enclosure M is evacuated and a carrier gas is introduced therein under a pressure of the order of a few tenths to a few tens of pascals.
- a carrier gas is introduced therein under a pressure of the order of a few tenths to a few tens of pascals.
- the plasma potential is not the potential of the cathode 10 but that, if the potential of this cathode is for example -500 volts, the plasma potential may be a few tens of volts.
- the plasma potential may be brought to a variable potential between a hundred and a thousand volts approximately.
- the vapor pressure of the material in the cavity reaches a pressure of the order of Pascal, one can interrupt the arrival of the gases 14 which cause the initial creation of the plasma while continuing the pumping by the pump 13.
- the discharge is maintained since, under these conditions, it is the vapors of the material 15 which play the role of the initial gas. There is therefore a self-maintained plasma inside the cavity.
- the material 15 will be for example a metal.
- the cathode is at a potential of -500 volts and the plate 20 at a potential of the order of -1200 volts, we obtained with copper 3 amperes of Cu + ions accelerated to 1200 volts on a surface of 50 cm2.
- the deposition rate of the copper atoms on the plate 20 was 20 micrometers / min, from which it can be deduced that 25 percent of the evaporated copper atoms were ionized.
- the process according to the present invention has many advantages, among which we can mention: - a high deposition rate equivalent to that achieved by vacuum evaporation, - a high ionization rate of metallic vapors (up to 25% while conventional ion deposition techniques reach ionization rates of the order of 1 to 2%), - the possibility of operating in the absence of carrier gas for 60% of the metals, which reduces the pollution rate.
- the device according to the present invention can have a long service life.
- no fundamental consideration limits the dimensions of the device and it is conceivable to bombard the target 20 over a great length if the opening 12 is a slot of great extent.
- the present invention is susceptible of numerous variants.
- the material constituting the cathode and the mass enclosure will be chosen to be non-reactive at operating temperatures, which is for example the case of tungsten.
- the enclosure may take various forms and may for example be associated with a ground grid disposed opposite the opening 11 to promote the initial formation of the plasma.
- Various systems of grids or openings brought to different potentials may be provided to accelerate and / or focus the ions projected onto the target.
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Particle Accelerators (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT89420467T ATE103106T1 (de) | 1988-11-30 | 1989-11-27 | Dampf- und ionenquelle. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8816012 | 1988-11-30 | ||
FR8816012A FR2639756B1 (fr) | 1988-11-30 | 1988-11-30 | Source de vapeurs et d'ions |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0371894A1 true EP0371894A1 (de) | 1990-06-06 |
EP0371894B1 EP0371894B1 (de) | 1994-03-16 |
Family
ID=9372645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP89420467A Expired - Lifetime EP0371894B1 (de) | 1988-11-30 | 1989-11-27 | Dampf- und Ionenquelle |
Country Status (6)
Country | Link |
---|---|
US (1) | US5025194A (de) |
EP (1) | EP0371894B1 (de) |
JP (1) | JPH03114122A (de) |
AT (1) | ATE103106T1 (de) |
DE (1) | DE68913920T2 (de) |
FR (1) | FR2639756B1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE20122909U1 (de) | 2000-12-15 | 2009-11-26 | BSH Bosch und Siemens Hausgeräte GmbH | Magnetventil für einen Kältemittelkreislauf |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6271529B1 (en) | 1997-12-01 | 2001-08-07 | Ebara Corporation | Ion implantation with charge neutralization |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0282467A1 (de) * | 1987-03-11 | 1988-09-14 | Nihon Shinku Gijutsu Kabushiki Kaisha | Hohlkathoden-Ionenquellen |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1209092A (fr) * | 1958-05-03 | 1960-02-29 | Commissariat Energie Atomique | Nouvelle source d'ions |
US3223885A (en) * | 1963-04-29 | 1965-12-14 | Gen Electric | Stabilization circuit for electron beam apparatus |
US3414702A (en) * | 1965-05-28 | 1968-12-03 | Gen Electric | Nonthermionic electron beam apparatus |
US3411035A (en) * | 1966-05-31 | 1968-11-12 | Gen Electric | Multi-chamber hollow cathode low voltage electron beam apparatus |
FR2595868B1 (fr) * | 1986-03-13 | 1988-05-13 | Commissariat Energie Atomique | Source d'ions a resonance cyclotronique electronique a injection coaxiale d'ondes electromagnetiques |
FR2618602B1 (fr) * | 1987-07-22 | 1990-01-05 | Centre Nat Rech Scient | Source d'electrons |
-
1988
- 1988-11-30 FR FR8816012A patent/FR2639756B1/fr not_active Expired - Fee Related
-
1989
- 1989-11-27 DE DE68913920T patent/DE68913920T2/de not_active Expired - Lifetime
- 1989-11-27 AT AT89420467T patent/ATE103106T1/de not_active IP Right Cessation
- 1989-11-27 EP EP89420467A patent/EP0371894B1/de not_active Expired - Lifetime
- 1989-11-29 US US07/442,796 patent/US5025194A/en not_active Expired - Lifetime
- 1989-11-29 JP JP1310466A patent/JPH03114122A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0282467A1 (de) * | 1987-03-11 | 1988-09-14 | Nihon Shinku Gijutsu Kabushiki Kaisha | Hohlkathoden-Ionenquellen |
Non-Patent Citations (4)
Title |
---|
INSTRUMENTS & EXPERIMENTAL TECHNIQUES, vol. 30, no. 1, partie 2, janvier-février 1987, pages 168-170, Plenum Publishing Corp., New York, US; V.A. SAENKO et al.: "Metal-ion source with hot hollow cathode" * |
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, vol. 26, no. 4, partie 2, juillet-août 1983, pages 926-928, Plenum Publishing Corp., New York, US; V.A. SAENKO et al.: "Plasma evaporator" * |
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH/SECTION B, vol. B21, nos. 2-4, 22 mars 1987, pages 182-185, North-Holland Publishing, Amsterdam, NL; M. MINGXIU et al.: "A hollow cold cathode multipurnose ion source" * |
NUCLEAR INSTRUMENTS AND METHODS, vol. 107, no. 3, 15 mars 1973, pages 477-492, North-Holland Publishing Co., Amsterdam, NL; J.H. FREEMAN et al.: "The technology and chemistry of heavy ion sources" * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE20122909U1 (de) | 2000-12-15 | 2009-11-26 | BSH Bosch und Siemens Hausgeräte GmbH | Magnetventil für einen Kältemittelkreislauf |
Also Published As
Publication number | Publication date |
---|---|
EP0371894B1 (de) | 1994-03-16 |
FR2639756A1 (fr) | 1990-06-01 |
JPH03114122A (ja) | 1991-05-15 |
DE68913920T2 (de) | 1994-11-03 |
US5025194A (en) | 1991-06-18 |
ATE103106T1 (de) | 1994-04-15 |
DE68913920D1 (de) | 1994-04-21 |
FR2639756B1 (fr) | 1994-05-13 |
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