EP0325341A2 - Material-Charakterisierung - Google Patents

Material-Charakterisierung Download PDF

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Publication number
EP0325341A2
EP0325341A2 EP89300004A EP89300004A EP0325341A2 EP 0325341 A2 EP0325341 A2 EP 0325341A2 EP 89300004 A EP89300004 A EP 89300004A EP 89300004 A EP89300004 A EP 89300004A EP 0325341 A2 EP0325341 A2 EP 0325341A2
Authority
EP
European Patent Office
Prior art keywords
frequency
microwaves
response
signal
resonant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP89300004A
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English (en)
French (fr)
Other versions
EP0325341A3 (en
EP0325341B1 (de
Inventor
Michael Anthony Flemming
Grahm Nicholas Plested
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Atomic Energy Authority
Original Assignee
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB888801395A external-priority patent/GB8801395D0/en
Priority claimed from GB888805364A external-priority patent/GB8805364D0/en
Application filed by UK Atomic Energy Authority filed Critical UK Atomic Energy Authority
Publication of EP0325341A2 publication Critical patent/EP0325341A2/de
Publication of EP0325341A3 publication Critical patent/EP0325341A3/en
Application granted granted Critical
Publication of EP0325341B1 publication Critical patent/EP0325341B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more

Definitions

  • the invention relates to a method for characterising a material by determining at least one electrical property of the material, and to an apparatus for performing the method.
  • Information about a material may be obtained, as described in UK patent application GB 2 202 947 A, by placing a probe incorporating an isolated resonant microstrip element in contact with the material so that fringing fields from any microwaves propagating in the element will interact with the material, coupling microwaves into the element, and sensing the microwaves propagating in the element. If the microwave frequency is scanned through a natural resonant frequency of the element then it will undergo a resonance. The resonant frequency and the sharpness of the resonance (Q) can both be determined, and these two parameters enable the dielectric constant (relative permittivity) and the dielectric loss of the material to be determined. Although this technique does enable the material to be characterised it is expensive because of the requirement for a broad-band variable frequency microwave generator.
  • a method for characterising a material the method using an element in which microwaves can propagate and can resonate, the method comprising arranging the material in such a position relative to the element that at least a part of the electromagnetic fields due to microwaves propagating in the element extend into the material, coupling microwaves into the element at a frequency near to a resonant frequency, sensing the microwave response of the element, both the coupling means and the sensing means being coupled to the element sufficiently weakly to have negligible effect on its natural resonance, and applying a modulating signal so as to modulate the response, hence obtaining a first signal indicative of the mean response, and a second signal indicative of the rate of change of the response with frequency, and using the first and the second signals to characterise the material.
  • the element might be an isolated resonant microstrip component arranged adjacent to the material, or it might be a resonant chamber within which the material can be placed.
  • a frequency near to a resonant frequency is meant a frequency at which the microwave response is significantly affected by the presence of the resonance; typically the power of the response is within about 3dB of the power at the peak of the resonance, i.e. the power is more than about a half of the power at the peak.
  • the first signal and the second signal might be used to determine both the dielectric constant and the dielectric loss of the material, for example by means of a computerised look-up table.
  • the modulation might be achieved by modulating the frequency of the microwaves; alternatively the modulating signal might vary the natural resonant frequency of the element, which may be achieved by varying the capacitance between two parts of the element for example by applying a modulating signal to a voltage-dependent capacitor (e.g. a varactor diode).
  • a voltage-dependent capacitor e.g. a varactor diode
  • the invention also provides an apparatus for performing the above-described method.
  • this shows a probe 10 comprising a thin sheet or substrate 12 of polytetra­fluoroethylene/glass fibre laminate, with a thin layer of copper (not shown) on its rear surface, and on its front surface a resonant microstrip element 14 in the form of a straight strip of copper, and input and output microstrips 16 and 17 colinear with the element 14.
  • Each microstrip 14, 16 and 17 is of characteristic impedance 50 ohms.
  • Coaxial cable connectors 18 at each end of the substrate 12 enable microwaves to be coupled into or out of the microstrips 16 and 17, and enable the rear surface copper layer to be earthed.
  • Gaps 20 between the ends of the element 14 and the microstrips 16 and 17 are 1.0 mm wide, providing a coupling capacitance of only about 20 fF and so ensuring that if the probe 10 is connected to a source and a detector of microwaves, the microstrip element 14 is not significantly loaded by the impedances of the source or of the detector.
  • an alternative probe 30 similar in many respects, comprises a thin substrate 32 of polytetrafluoroethylene/glass fibre laminate with a thin layer 33 (not shown in Figure 2) of copper on its rear surface.
  • a resonant microstrip element 34 On its front surface is a resonant microstrip element 34 in the form of a circular ring-shaped copper strip of mean diameter 33 mm and strip-width 1mm.
  • Two coaxial cable connectors 38 are mounted in corresponding small circular holes defined in the layer 33 underneath diametrically opposed points on the element 34, and are soldered to the layer 33.
  • copper-sheathed coaxial cables 40 and 42 can be inserted into the connectors 38; the layer 33 is then earthed through the sheaths of the cables 40 and 42, while the centre conductors of the connectors 38 abut the rear surface of the substrate 32, the coupling capacitance between the centre conductor and the element 34 being about 20 fF with the consequences discussed above.
  • the probe 10 or 30 is placed such that a material under test is adjacent to the front surface of the substrate 12 or 32 and hence to the resonant element 14 or 34, and microwaves are capacitively coupled into the element 14 or 34 from a source via the cable 40.
  • the amplitude of the forced microwave oscillations in the element 14 or 34 determines the amplitude of the microwave signal coupled into the output cable 42. In general this forced oscillation will be of small amplitude, but for frequencies which correspond t0o the fundamental resonant frequency of the element 14 or 34 to a harmonic of it the oscillation is of large amplitude.
  • the resonant frequencies are those at which the length of the element 14 is an integral number of half wavelengths, or the circumference of the element 34 is an integral number of wavelengths, and this clearly depends upon the velocity of propagation of microwaves along the element 14 or 34.
  • the resonant frequency will be determined by the dielectric constant (relative permittivity) of the material under test (because this determines the propagation velocity of the microwaves), and the sharpness of the response (Q) and the peak response will be primarily determined by the dielectric loss of the material. It will be appreciated that because coupling to and from the element 34 in the probe 30 takes place through the substrate 32, the material under test will not affect the coupling.
  • FIG. 4 there is shown graphically the variation in microwave signal in the output cable 42, for a fixed amplitude of input signal, which would occur if the microwave frequency were to be varied between 9.7 GHz and 10.7 GHz.
  • Three graphs are shown, corresponding to three different materials adjacent to the probe 30: oil with 17% water (graph A), 18% water (graph B), and 19% water (graph C). These graphs show the fifth harmonic resonance. It will be observed that as the water content of the oil increases, the resonant frequency and the Q-value decrease, because the dielectric constant and the dielectric loss both increase. It will be appreciated however that, in performing the method of the invention, complete resonant peaks as shown in Figure 4 are not observed.
  • the output signal will have a mean amplitude P (equal to the response at the mean frequency F) and will be modulated between the values (P-p) and (P+p).
  • P the mean amplitude of the modulation
  • the probe 30 is connected by the input cable 40 to a frequency-modulated microwave oscillator 50, and by the output cable 42 to a detector 52. Signals from the detector 52 are passed both to a dc amplifier 54 whose output indicates the mean value of the microwave signal, and also to an ac amplifier 56 whose output indicates the amplitude of the modulation of the microwave signal and so represents the gradient of the signal/frequency graph.
  • the dielectric constant and the dielectric loss of the material adjacent to the probe 30 can be determined, and hence the material identified; this may be achieved by a computer 58 programmed with a suitable look-up table, calculated for a particular probe and for a particular mean frequency.
  • this represents graphically, as a parametric plot, calculated for the probe 30 at a mean frequency of 11.085 GHz, the variation of microwave signal amplitude and gradient with effective dielectric constant of the materials adjacent to the probe, and with the loss factor for the probe.
  • the effective dielectric constant is determined by the dielectric constants of the substrate material and of the material under test, while the loss factor of the probe depends principally upon the dielectric loss of the material under test. For fixed dielectric loss, changing the dielectric constant changes primarily the resonant frequency, so displacing the signal/frequency graph (whose shape is similar to those shown in Figure 4) along the frequency axis.
  • the effective dielectric constant is initially 2.43 then there is a resonance at 11.085 GHz, and so maximum amplitude and zero gradient (see point R); decreasing the effective dielectric constant causes the amplitude to decrease, while the gradient initially increases rapidly, and then slowly decreases (see arrow S).
  • increasing the dielectric loss and so the loss factor of the probe causes decreases in both amplitude and gradient, except when starting at a resonance in which case the gradient remains zero.
  • the mean signal and the gradient of the signal/frequency graph can be measured, and then by means of a look-up table equivalent to Figure 5, the dielectric loss and the dielectric constant of the material under test can be determined.
  • the oscillator 50 is instead one which can be switched between two discrete frequencies (differing by about 10 MHz), and no ac amplifier 56 is provided.
  • the computer 58 determines the responses at the two discrete frequencies, and calculates their mean, and the difference between them. From this difference the gradient of the signal/frequency graph can readily be determined.
  • the oscillator 50 might be controlled by signals from the computer 58, for example to switch to the other frequency when the computer has determined the response at a first frequency.
  • the modulation is thus effectively a square-wave or a rectangular wave variation in the microwave frequency.
  • the probe 60 includes as the resonant element a 33 mm diameter resonant microstrip ring 34 separated by a substrate sheet from an earthed layer of copper 33; input and output coaxial cables 40 and 42 are capacitively coupled to diametricaly opposite points on the ring 34 as described previously. At the two points X midway between the input and the output are connected two varactor diodes 62 (i.e.
  • reverse biased diodes whose capacitance is voltage-dependent), each being mounted on the rear of the probe 60 and connected between the ring 34 and the earthed layer 33.
  • a source 64 to provide a dc bias voltage through a resistor 65
  • an ac source 66 to provide a modulating voltage through a capacitor 67.
  • the probe 60 is preferably operated with a microwave frequency near to an even harmonic, as this ensures there is an antinode of electric field at the points X (maximising the effect of the varactors 62).
  • the probe 60 is used in a circuit as in Figure 3 except that the frequency modulated source 50 is replaced by a constant frequency microwave source.
  • the bias voltage is adjusted (e.g. up to 30 V) to ensure that the chosen resonant frequency of the ring 34 is near the frequency of the microwaves.
  • An ac modulating voltage is then applied by the source 66, modulating the capacitance of the varactors 62 and hence the resonant frequency of the ring 34.
  • the signal in the cable 42 is consequently modulated, its ac component being indicative of the gradient of the signal/frequency graph.
  • the dielectric constant and the dielectric loss of the material adjacent to the probe 60 can be determined in the same manner as described above.
EP89300004A 1988-01-22 1989-01-03 Material-Charakterisierung Expired - Lifetime EP0325341B1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB8801395 1988-01-22
GB888801395A GB8801395D0 (en) 1988-01-22 1988-01-22 Microwave probe
GB888805364A GB8805364D0 (en) 1988-03-07 1988-03-07 Material characterisation
GB8805364 1988-03-07

Publications (3)

Publication Number Publication Date
EP0325341A2 true EP0325341A2 (de) 1989-07-26
EP0325341A3 EP0325341A3 (en) 1989-11-15
EP0325341B1 EP0325341B1 (de) 1992-05-13

Family

ID=26293353

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89300004A Expired - Lifetime EP0325341B1 (de) 1988-01-22 1989-01-03 Material-Charakterisierung

Country Status (4)

Country Link
US (1) US4866370A (de)
EP (1) EP0325341B1 (de)
DE (1) DE68901462D1 (de)
GB (1) GB2214310B (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0511651A2 (de) * 1991-04-30 1992-11-04 Ivac Corporation Rohreinbau-Fluidüberwachungssystem und Verfahren
DE102006036188A1 (de) * 2006-08-01 2008-02-07 Technische Universität Hamburg-Harburg Resonanter Mikrowellensensor
DE19705260B4 (de) * 1996-02-20 2008-12-24 Hauni Maschinenbau Ag Anordnung zum Erfassen mindestens einer dielektrischen Eigenschaft eines Stoffes
WO2009146880A2 (de) * 2008-06-02 2009-12-10 Rohde & Schwarz Gmbh & Co. Kg Messvorrichtung und verfahren zur bestimmung von gewebeparametern
DE19734978B4 (de) * 1997-02-12 2013-10-17 Hauni Maschinenbau Ag Verfahren und Anordnung zum Erfassen mindestens einer Eigenschaft eines Stoffes

Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
FR2623291B1 (fr) * 1987-11-17 1990-03-16 France Etat Dispositif de caracterisation electrique d'echantillons et application a la cartographie electrique d'echantillons semi-conducteurs de grande surface
US5073755A (en) * 1990-03-19 1991-12-17 Mpr Teltech Ltd. Method and apparatus for measuring the electrical properties of dielectric film in the gigahertz range
US5103182A (en) * 1990-04-02 1992-04-07 Texas Instruments Incorporated Electromagnetic wave measurement of conductive layers of a semiconductor wafer during processing in a fabrication chamber
US5083088A (en) * 1990-07-24 1992-01-21 Bereskin Alexander B Microwave test fixtures for determining the dielectric properties of a material
US5187443A (en) * 1990-07-24 1993-02-16 Bereskin Alexander B Microwave test fixtures for determining the dielectric properties of a material
US5157339A (en) * 1991-04-16 1992-10-20 Atlantic Richfield Company Method for measuring water-oil mixtures with relatively high gas content
US5455516A (en) * 1992-04-21 1995-10-03 Thermedics Inc. Meter and method for in situ measurement of the electromagnetic properties of various process materials using cutoff frequency characterization and analysis
US6163158A (en) 1996-02-20 2000-12-19 Hauni Maschinenbau Ag Method of and apparatus for ascertaining at least one characteristic of a substance
US6201400B1 (en) 1998-06-23 2001-03-13 The Boeing Company Bulls-eye mid-frequency impedance probe
SE9803850L (sv) * 1998-11-11 2000-05-12 Kildal Antenna Consulting Ab Dielektrisk mikrovågssensor

Citations (1)

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US3581190A (en) * 1968-09-17 1971-05-25 Mc Donnell Douglas Corp Microwave resonance systems employing a bimodal cavity

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GB715415A (en) * 1952-05-23 1954-09-15 British Thomson Houston Co Ltd Improvements in and relating to measuring apparatus
GB890412A (en) * 1958-06-18 1962-02-28 Ass Elect Ind Improvements relating to apparatus measuring the q values of resonant systems
US3586971A (en) * 1969-02-10 1971-06-22 Canadian Patents Dev Microwave apparatus for ascertaining changes in dielectric properties utilizing a slow wave structure
SU750389A1 (ru) * 1976-10-01 1980-07-23 Предприятие П/Я Г-4493 Устройство дл измерени добротности колебательных контуров
DE2848993A1 (de) * 1978-11-11 1980-05-22 Bayer Ag Mikrowellenfeuchtemessgeraet mit umschaltbaren messbereichen
US4277741A (en) * 1979-06-25 1981-07-07 General Motors Corporation Microwave acoustic spectrometer
SU842514A1 (ru) * 1979-08-10 1981-06-30 Предприятие П/Я А-3759 Устройство дл измерени диэлектрическойпРОНицАЕМОСТи МАТЕРиАлОВ
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Non-Patent Citations (2)

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MANUFACTURING TECHNOLOGY NOTE, NTN-78/0405, report no. AMMRC-CTR-74-58, March 1978, Virginia, US; O.R. GERICKE: "Surface-crack detector for metal products" *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0511651A2 (de) * 1991-04-30 1992-11-04 Ivac Corporation Rohreinbau-Fluidüberwachungssystem und Verfahren
EP0511651A3 (de) * 1991-04-30 1994-03-09 Ivac Corp
DE19705260B4 (de) * 1996-02-20 2008-12-24 Hauni Maschinenbau Ag Anordnung zum Erfassen mindestens einer dielektrischen Eigenschaft eines Stoffes
DE19734978B4 (de) * 1997-02-12 2013-10-17 Hauni Maschinenbau Ag Verfahren und Anordnung zum Erfassen mindestens einer Eigenschaft eines Stoffes
DE102006036188A1 (de) * 2006-08-01 2008-02-07 Technische Universität Hamburg-Harburg Resonanter Mikrowellensensor
DE102006036188B4 (de) * 2006-08-01 2011-06-16 Franz Ludwig Gesellschaft für Mess- und Regeltechnik mbH Resonanter Mikrowellensensor
WO2009146880A2 (de) * 2008-06-02 2009-12-10 Rohde & Schwarz Gmbh & Co. Kg Messvorrichtung und verfahren zur bestimmung von gewebeparametern
WO2009146880A3 (de) * 2008-06-02 2010-02-04 Rohde & Schwarz Gmbh & Co. Kg Messvorrichtung und verfahren zur bestimmung von gewebeparametern

Also Published As

Publication number Publication date
EP0325341A3 (en) 1989-11-15
DE68901462D1 (de) 1992-06-17
GB2214310A (en) 1989-08-31
US4866370A (en) 1989-09-12
EP0325341B1 (de) 1992-05-13
GB2214310B (en) 1992-01-08
GB8900033D0 (en) 1989-03-01

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