EP0275844B1 - Non evaporable getter device incorporating a ceramic support and method for the manufacture thereof - Google Patents
Non evaporable getter device incorporating a ceramic support and method for the manufacture thereof Download PDFInfo
- Publication number
- EP0275844B1 EP0275844B1 EP87830452A EP87830452A EP0275844B1 EP 0275844 B1 EP0275844 B1 EP 0275844B1 EP 87830452 A EP87830452 A EP 87830452A EP 87830452 A EP87830452 A EP 87830452A EP 0275844 B1 EP0275844 B1 EP 0275844B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- weight percent
- support
- chosen
- particulate
- getter device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910000986 non-evaporable getter Inorganic materials 0.000 title claims description 37
- 239000000919 ceramic Substances 0.000 title claims description 30
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000463 material Substances 0.000 claims description 59
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 21
- 229910052726 zirconium Inorganic materials 0.000 claims description 19
- 238000005245 sintering Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 239000004411 aluminium Substances 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 14
- 229910052742 iron Inorganic materials 0.000 claims description 14
- 229910052720 vanadium Inorganic materials 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910001093 Zr alloy Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 150000004678 hydrides Chemical class 0.000 claims description 4
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000003870 refractory metal Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- -1 titanium hydride Chemical compound 0.000 claims description 3
- 229910000048 titanium hydride Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 2
- 238000001035 drying Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 19
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001652 electrophoretic deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012254 powdered material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000012671 ceramic insulating material Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012255 powdered metal Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
- H01J7/18—Means for absorbing or adsorbing gas, e.g. by gettering
Definitions
- the present invention relates to a non-evaporable getter device comprising a ceramic support, as well as a method for the manufacture of such a device.
- Non-evaporable getter devices are well-known in the art. They usually consist of a powdered metal or alloy which when heated to an elevated temperature, diffuse into the bulk a protective layer such that the surface of the particles become reactive towards a large number of gases.
- the non-evaporable getter material is held in a support such as, for instance, by pressing the powder into a U-shaped metal ring channel.
- a wire which has previously been coated with a ceramic insulating material such as alumina.
- the wire coated with alumina is used as one electrode in an electrophoretic coating bath in which there are suspended particles of the getter material.
- the getter material is electrophoretically deposited onto the ceramic coated wire.
- the use of such a support has several disadvantages. Firstly the alumina layer on the wire must be very thin otherwise it is very difficult to cause sufficient electric current to flow to effect the deposition. Due to the high electrical resistance of the alumina coating it is also very difficult to control the parameters of deposition, resulting in an uneven deposition. An additional difficulty is that during a subsequent sintering process the electrophoretically deposited getter material detaches from the ceramic support producing flakes and undesirable loose particles.
- a ceramic support is coated with a thin electrically conductive film.
- the ceramic support may be of any ceramic material which is compatible with use in high vacuum, preferably alumina. It may be of any shape size or thickness.
- the thin conductive film may be of any conductive material such as tin oxide or other conductive oxides. It is preferable however to use a thin metal layer such as aluminium or copper.
- the ceramic may be coated with this thin metallic film by any known method such as electroplating or by deposition in vacuum.
- the thin metal film can be Ni, Cu, Ag, Mo or Fe but is preferably aluminium. Its thickness is preferably between 0.1 ⁇ m and 5 ⁇ m.
- the thin conductive film is then made to be one electrode of an electroplating bath.
- a thicker metallic film having a thickness of several micrometers and preferably between 5 ⁇ m and 50 ⁇ m.
- the electroplated metal film may be of any metal which is compatible with use in high vacuum such as Ti, Zr, Mo, Fe, Cu, Ag, Pt, Au but it is preferably nickel.
- the thin conductive film and the thicker metal layer constitute an intermediate electrically conductive layer which could however be a single metallic layer.
- the electroplated support is electrophoretically coated with a mixture of a particulate non-evaporable getter material and an antisintering material.
- the electrophoretic coating takes place according to a process as described in UK Patent application publication GB-A-2,157,486.
- the particular non-evaporable getter material is any getter material suitable for the sorption of active gases in vacuum. It is preferably chosen from the group consisting of titanium, zirconium and their hydrides. Its particle size should be between 20-60 ⁇ m and preferably with an average size of 40 ⁇ m.
- the antisintering material is in particulate form and is any material which is capable of hindering the sintering of the non-evaporable getter material. It is preferably chosen from the group consisting of graphite, refractory metals and metallic getter alloys (particularly zirconium based alloys). If a zirconium based alloy is used as an antisintering material, then it is preferably chosen from the group consisting of:
- the antisintering material preferably has a particle size of between 20-60 ⁇ m with an average particle size of 40 ⁇ .
- the weight ratio of the particulate non-evaporable getter material to the particulate antisintering material is from 1 : 4 to 4 : 1.
- the getter material If a hydrided material is used as the getter material then this temperature should be maintained for a sufficient time as to release all hydrogen.
- the getter device is then heated at a higher temperature such as between 900°C and 1000°C to produce a porous non-evaporable getter device in which the thicker metal layer diffuses into the ceramic support and the electrophoretically coated getter mixture.
- the getter device is then allowed to cool to room teperature whereupon it is removed from the vacuum oven and is ready for use.
- the term "sintering" as used herein refers to the process of heating powdered material at a temperature and for a time sufficient to give some mass transfer between adjacent particles without appreciably reducing the surface area of the powdered material. The mass transfer serves to bind the particles together thereby increasing strength and reducing the number of loose particles. Lower temperatures require longer times.
- the sintering temperature of a material is that temperature at which the above-described sintering takes place in about one hour. In a preferred embodiment of the present invention a temperature is chosen which is at or slightly above the sintering temperature of the non-evaporable getter material and below the sintering temperature of the antisintering material.
- ceramic means any material that is not electrically conductive at the temperature of use including glass-ceramics, quartz-glass, SiO2, refractory metal oxides in general and Al2O3 in particular.
- Figure 1 shows a porous non-evaporable getter device 102 comprising a ceramic substrate 104.
- Ceramic support 104 has one of its surfaces 106 coated with a thin film 108 of conductive material.
- On the thin film 108 of conductive material is an electrodeposited thicker layer 110 of metal.
- Onto thicker film 110 has been electrophoretically deposited particles 112, 112' of particulate non-evaporable getter material and particles 114, 114' of antisintering material.
- FIG. 2 shows a porous non-evaporable getter device 202 similar to that shown in Fig. 1 except that it has now been subject to a sintering process.
- Getter device 202 comprises a ceramic support 204 that supports particles of non-evaporable getter material 206, 206' and particles 208, 208' of antisintering material.
- the thin and thick conductive layers have diffused into the ceramic to produce a diffusion layer 210 and they have diffused into the getter and/or antisintering material particles to produce diffusion zones 212, 212'.
- these diffusion zones may result from a single metallic layer.
- This comparative example was designed to show the behaviour of a prior art porous non-evaporable getter device comprising a ceramic support and a porous sintered getter material layer.
- a metallic wire was coated with a thin layer of alumina thereby forming a tube which was coated electrophoretically following the process as described in the above mentioned UK Patent Application Publication GB-A-2,157,486 using getter material particles of titanium hydride and antisintering particles of a Zr-V-Fe alloy both having a particle size of approximately 40 ⁇ m. After the sintering process and cooling down to room temperature a metallurgical cross-section was made and is shown in Fig. 3.
- Figure 3 shows the cross-section 302 where can be seen the ceramic support 304 of alumina.
- the sintered non-evaporable getter material 306 comprising titanium and Zr-V-Fe is found to be separated from the ceramic support 304 by a space 308 showing a detachment of the getter material 306 from the ceramic support 304.
- This example is designed to show the behaviour of a porous non-evaporable getter device of the present invention.
- An alumina tube was taken and its external surface was coated with aluminium in a vacuum deposition apparatus. Using the aluminium film as an electrode a thicker layer of Ni was electroplated upon it. The Ni layer was then used as an electrode in an electrophoretic deposition bath exactly as for Example 1.
- the porous non-evaporable getter material again comprised Ti hydride and a Zr-V-Fe alloy as an antisintering agent. The particle size of both components was approximately 40 ⁇ m. After the sintering operation and cooling to room temperature a cross-section 402 of the getter device was made and reported in Fig. 4.
- the alumina support 404 and the getter material 406 are shown to be clearly adhering to each other along line 408. The aluminium and nickel layers can no longer be seen as they have diffused into the alumina and the getter material.
- the deposition took place in a few seconds at an applied voltage of 15 V with the passage of 1 ampere. No H2 formation was observed and the deposition was able to take place for 20 seconds thus providing a sufficient quantity of getter material with a smooth uniform surface appearance.
- This example illustrates that embodiment of the present invention wherein the intermediate electrically conductive layer is a single metal.
- Example 2 The procedure of Example 2 is repeated except that the aluminium is replaced with nickel such that the intermediate electrically conductive layer is substantially all nickel.
Landscapes
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Separation Of Gases By Adsorption (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT22807/86A IT1201540B (it) | 1986-12-22 | 1986-12-22 | Dispositivo getter non evaporabile comprendente un supporto ceramico e metodo per la sua fabbricazione |
IT2280786 | 1986-12-22 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0275844A2 EP0275844A2 (en) | 1988-07-27 |
EP0275844A3 EP0275844A3 (en) | 1990-02-28 |
EP0275844B1 true EP0275844B1 (en) | 1993-07-28 |
Family
ID=11200649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP87830452A Expired - Lifetime EP0275844B1 (en) | 1986-12-22 | 1987-12-21 | Non evaporable getter device incorporating a ceramic support and method for the manufacture thereof |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0275844B1 (ja) |
JP (1) | JPH0687402B2 (ja) |
DE (1) | DE3786779T2 (ja) |
IN (1) | IN169971B (ja) |
IT (1) | IT1201540B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5934964A (en) * | 1994-02-28 | 1999-08-10 | Saes Getters S.P.A. | Field emitter flat display containing a getter and process for obtaining it |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3923745A1 (de) * | 1989-07-18 | 1991-01-31 | Eltro Gmbh | Laservorrichtung mit ramanzelle |
SE9700612D0 (sv) | 1997-02-20 | 1997-02-20 | Cecap Ab | Sensorelement med integrerat referenstryck |
JP2001210225A (ja) * | 1999-11-12 | 2001-08-03 | Sony Corp | ゲッター、平面型表示装置及び平面型表示装置の製造方法 |
US6911065B2 (en) * | 2002-12-26 | 2005-06-28 | Matheson Tri-Gas, Inc. | Method and system for supplying high purity fluid |
EP2960935B1 (en) * | 2013-02-25 | 2018-04-04 | KYOCERA Corporation | Package for housing an electronic component and electronic device |
DE102014203083A1 (de) * | 2014-02-20 | 2015-08-20 | Mahle International Gmbh | Adsorbervorrichtung |
CN109680249A (zh) * | 2019-01-25 | 2019-04-26 | 苏州大学 | 非蒸散型薄膜吸气剂及其制备方法 |
CN110820031A (zh) * | 2019-11-19 | 2020-02-21 | 有研工程技术研究院有限公司 | 一种微型吸气剂的制备方法 |
CN114318233A (zh) * | 2021-12-10 | 2022-04-12 | 兰州空间技术物理研究所 | 一种具有薄膜镀层的吸气剂及其制备方法和应用 |
WO2023186704A1 (en) * | 2022-04-01 | 2023-10-05 | Saes Getters S.P.A. | Substrate comprising a base and an integrated getter film for manufacturing microelectronic devices |
CN115185169A (zh) * | 2022-09-07 | 2022-10-14 | 上海晶维材料科技有限公司 | 一种用于空间氢原子钟上具有抗粉化能力的吸附泵 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3620645A (en) * | 1970-05-01 | 1971-11-16 | Getters Spa | Getter device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7707079A (nl) * | 1977-06-27 | 1978-12-29 | Philips Nv | Elektrische lamp. |
IT1110271B (it) * | 1979-02-05 | 1985-12-23 | Getters Spa | Lega ternaria getterante non evaporabile e metodo di suo impiego per l'assorbimento di acqua,vapore d'acqua,di altri gas |
IT1173865B (it) * | 1984-03-16 | 1987-06-24 | Getters Spa | Metodo perfezionato per fabbricare dispositivi getter non evaporabili porosi e dispositivi getter cosi' prodotti |
US4620645A (en) * | 1984-03-26 | 1986-11-04 | Aeroil Products Company, Inc. | Portable asphalt melting and dispensing apparatus |
-
1986
- 1986-12-22 IT IT22807/86A patent/IT1201540B/it active
-
1987
- 1987-12-08 IN IN884/MAS/87A patent/IN169971B/en unknown
- 1987-12-21 DE DE87830452T patent/DE3786779T2/de not_active Expired - Fee Related
- 1987-12-21 EP EP87830452A patent/EP0275844B1/en not_active Expired - Lifetime
- 1987-12-21 JP JP62321623A patent/JPH0687402B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3620645A (en) * | 1970-05-01 | 1971-11-16 | Getters Spa | Getter device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5934964A (en) * | 1994-02-28 | 1999-08-10 | Saes Getters S.P.A. | Field emitter flat display containing a getter and process for obtaining it |
Also Published As
Publication number | Publication date |
---|---|
DE3786779D1 (de) | 1993-09-02 |
EP0275844A2 (en) | 1988-07-27 |
JPH0687402B2 (ja) | 1994-11-02 |
IT1201540B (it) | 1989-02-02 |
EP0275844A3 (en) | 1990-02-28 |
JPS63182283A (ja) | 1988-07-27 |
IT8622807A0 (it) | 1986-12-22 |
DE3786779T2 (de) | 1993-11-18 |
IN169971B (ja) | 1992-01-18 |
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