Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
  • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
  • H01L23/5329—Insulating materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
  • H01L23/64—Impedance arrangements
  • H01L23/647—Resistive arrangements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
  • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01005—Boron [B]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01013—Aluminum [Al]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01014—Silicon [Si]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01015—Phosphorus [P]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/0102—Calcium [Ca]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01024—Chromium [Cr]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/0103—Zinc [Zn]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01042—Molybdenum [Mo]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01047—Silver [Ag]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/12—Passive devices, e.g. 2 terminal devices
  • H01L2924/1203—Rectifying Diode
  • H01L2924/12036—PN diode
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/12—Passive devices, e.g. 2 terminal devices
  • H01L2924/1204—Optical Diode
  • H01L2924/12044—OLED
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1301—Thyristor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
  • H01L2924/1901—Structure
  • H01L2924/1904—Component type
  • H01L2924/19043—Component type being a resistor

Definitions

• the invention relates to a semiconductor component with a semiconductor body, which has a sequence of layer-shaped zones with at least two intermediate pn junctions and in at least one of the two outer zones forming the emitter zone, a structure in which sections of the emitter zone and intermediate parts of the adjacent base zone form a common surface, and on the base zone parts with a first metallization and on the emitter zone sections with a second metallization, over which a continuous contact plate is attached.
• Electrode structures with interlocking sections of electrodes with different poles are known. These require special measures to avoid short circuits. As the dimensions of the electrode sections become smaller, that is to say as the subdivision increases, the fine structuring becomes denser and the demands on the process technology and on the device for producing such arrangements increase.
• GTO thyristors, transistors In known pressure-contactable, switchable power semiconductor components (GTO thyristors, transistors), emitter zone metallization and base zone metallization, as parts of the electrode structure, are arranged in one plane and with the same material thickness. All sections of the emitter zone are connected with a continuous contact piece made of molybdenum. This has a corresponding pattern of contact bumps on the connecting surface, so that the base zone metallization is exposed. Such a structure cannot be used arbitrarily because of the limited structurability of the contact piece and because of its limited adjustment accuracy to the emitter geometry.
• the base zone metallization is lower than the emitter zone metallization, and a flat contact piece is provided for contacting the latter. This structure necessitates a considerable outlay in terms of process for the formation of the base zone metallization.
• Each strip-shaped section of the emitter metallization has an area of the con over the entire surface tact piece, such as a molybdenum blank, directly connected.
• a GTO thyristor When a GTO thyristor is switched off, for example, part of the forward current flowing previously is drawn off via the gate with the aid of a negative gate voltage. Because of the very low-resistance connection between the emitter metallization and the contact piece, the time in which the emitter zone sections react after the negative voltage is applied is different due to tolerances of the parameters determining the switch-off behavior. This results in an undesirable limitation of the anode current that can be switched off.
• the invention has for its object to improve the switching behavior of pressure-contactable, switchable semiconductor components with a structured electrode in that the emitter zone sections via defined resistances with the connecting parts, e.g. the contact pieces.
• the object is achieved in a semiconductor device of the type mentioned in the characterizing features of the main claim.
• Advantageous embodiments are given in claims 2 to 9.
• the invention is explained on the basis of the exemplary embodiment shown in the figure.
• the illustration shows schematically the disk-shaped semiconductor body a GTO thyristor and the arrangement of a contact on the same.
• the semiconductor body (I) consisting of a high-resistance, n-conducting central zone (1), an adjoining p-conducting zone (2, 3) and the emitter zone sections (4) embedded in the control base zone (2), shows this usual structure for a switchable semiconductor rectifier element.
• the two functional areas namely the control current area and the load current area, are each formed in a strip-like manner, alternately arranged in succession and together form the one of the two main surfaces of the semiconductor body (I).
• Each strip-shaped part of the control current range, i.e. the base zone part (2a) lying between two adjacent emitter zone sections (4) is provided with a metallization (6).
• This base zone metallization (6) is covered with an insulating layer (7), which is designed for a perfect covering of the base zone metallization (6) which is subjected to the contact pressure when the structure is press-contacted.
• the insulating layer (7) overlaps the pn junction which emerges between the base zone part (2a) and the emitter zone section (4).
• emitter metallization The free surface of the emitter zone sections (4) and the insulating layer surfaces (7) is covered with a second contact layer (8) referred to as emitter metallization.
• the tabular support areas (8c) of the emitter metallization (8) form the contact surfaces for the contact piece (10). The same is pressed onto the areas (8c) when the semiconductor component is used with its flat lower surface. Due to the arrangement of the metallizations (6, 8) according to the invention, the insulation Layer (7) and the contact piece (10) with only partial support on the metallization (8) are formed in a surprisingly simple manner between the contact piece (10) and the emitter zone section (4) in each case defined resistors for load current paths. These resistors R consist of a partial resistor R1 between the contact piece (10) and the end of the insulating layer (7) and a partial resistor R2 from this end up to the plane of symmetry of the respective emitter zone section (4).
• the width of the emitter zone sections (4) can be selected to determine the resistance R from the partial resistors R1 and R2, as can the width of the base zone metallization (6) within certain limits, as a result of which the extent of the insulating layer (7) on the semiconductor surface is determined.
• the resistance is also determined by the thickness and the composition of the emitter metallization (8).
• the inorganic compounds SiO, Sio 2 , Si 3 N 4 and Al 2 O 3 and glasses based on silicate, for example zinc borosilicate glasses or phosphor glasses, are suitable as the material of the insulating layer (7). Furthermore, favorable results were achieved with an organic layer made of a polyimide.
• the thickness of the insulating layer (7) should be at least 0.1 ⁇ m and preferably 0.5 to 30 ⁇ m.
• the material for the base zone metallization (6) is e.g. Aluminum or a layer sequence of the metals aluminum, chrome, nickel, silver is provided. This fulfills the requirement that this metallic coating of the base zone parts must have a high electrical conductivity in order to keep the lateral voltage drops occurring therein as small as possible.
• Suitable as material for the emitter metallization (8) alloys made of or with nickel and chrome Chromium-nickel alloys with a proportion of nickel in the range from 35 to 60 percent by weight are preferably provided.
• a chromium-nickel alloy with 40 percent by weight nickel, the rest chromium is preferably provided.
• the material of the emitter metallization (8) can also contain silicon oxide.
• the thickness of the emitter metallization (8) is at least 1 ⁇ m, preferably 3 ⁇ m to 30 ⁇ m.
• the metallizations (6, 8) can e.g. generated by vapor deposition or sputtering and then firmly connected to the underlying material in a subsequent temperature step.
• the distance between the base zone metallization (6) and the emitter zone section (4) should be at least 5 ⁇ m and can be up to 500 ⁇ m.
• Typical values for the construction of a semiconductor body according to the invention are 200 ⁇ m for the width of the emitter zone sections (4), the distance between the planes of symmetry of these sections is 600 ⁇ m, the width of the
• Base zone metallization (6) 200 ⁇ m, the thickness of the base zone metallization 8 ⁇ m, the thickness of the insulating layer (7) 5 ⁇ m and the thickness of the emitter metallization (8) 6 ⁇ m.
• the base metallization consists of aluminum
• the emitter metallization consists of a nickel / chrome alloy with e.g. 40 weight percent nickel, balance chrome.
• the switchable anode current of a GTo thyristor with the aforementioned typical structure is about 50% higher than that of known designs.
• n-conducting semiconductor output disk For the production of semiconductor components according to The invention is produced in a pretreated, large-area, preferably n-conducting semiconductor output disk by doping on both sides a pnp layer film (1, 2, 3).
• the pattern of the emitter zone sections (4) is then produced using a masking process.
• the base zone parts (2a) are then provided with a metallization (6) with the aid of a further masking.
• the entire surface is covered with an insulating layer (7), for example from a compound of the semiconductor material.
• all emitter zone sections are exposed to such an extent that the remaining insulating layer still covers the gate transition between a base zone part and the adjacent emitter zone section.
• the structured protective covering of the semiconductor body achieved in this way with e.g. Strip-shaped windows above the emitter zone sections (4) are now applied, for example evaporated, a continuous, second metallization, which connects all emitter zone sections, the emitter metallization (8).
• the latter then has the shape of a step-shaped depression above the emitter zone sections and the shape of a tabular attachment with a free contact surface (8c) above the metallizations (6).
• a contact plate (10) is applied to this outer contact layer of the semiconductor conductor body, with its flat contact surface on all tabular areas (8c) of the emitter metallization (8) in
• Conductive connection rests and is pressed onto the electrode structure when using the semiconductor component. This means that, regardless of the degree of subdivision below, there is a perfect pressure contact capable Given emitter electrode structure, in which the arrangement of defined resistances to compensate for tolerances in the switch-off time of the emitter zone sections is achieved in a particularly simple manner by the design of the emitter metallization sections described, and thus the desired improvement in the switch-off behavior of generic semiconductor components is given.

Landscapes

• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Thyristors (AREA)
• Bipolar Transistors (AREA)
• Die Bonding (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=6300815

Family Applications (1)

Country Status (4)

Families Citing this family (2)

Family Cites Families (4)

• 1986
  • 1986-05-14 DE DE19863616233 patent/DE3616233A1/de active Granted
• 1987
  • 1987-05-12 JP JP62502953A patent/JPH01502706A/ja active Pending
  • 1987-05-12 EP EP87902437A patent/EP0268599A1/de not_active Withdrawn
  • 1987-05-12 WO PCT/DE1987/000221 patent/WO1987007080A1/de not_active Application Discontinuation

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events