DE2050289A1 - - Google Patents
Info
- Publication number
- DE2050289A1 DE2050289A1 DE19702050289 DE2050289A DE2050289A1 DE 2050289 A1 DE2050289 A1 DE 2050289A1 DE 19702050289 DE19702050289 DE 19702050289 DE 2050289 A DE2050289 A DE 2050289A DE 2050289 A1 DE2050289 A1 DE 2050289A1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- layer
- area
- main
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 15
- 230000000694 effects Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910015367 Au—Sb Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 201000009482 yaws Diseases 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H10D62/135—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/206—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8115669 | 1969-10-13 | ||
| JP8869569A JPS5028797B1 (en, 2012) | 1969-11-07 | 1969-11-07 | |
| JP9336469 | 1969-11-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2050289A1 true DE2050289A1 (en, 2012) | 1971-04-22 |
| DE2050289B2 DE2050289B2 (de) | 1980-07-17 |
Family
ID=27303506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2050289A Ceased DE2050289B2 (de) | 1969-10-13 | 1970-10-13 | Steuerbarer Halbleitergleichrichter |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3619738A (en, 2012) |
| DE (1) | DE2050289B2 (en, 2012) |
| GB (1) | GB1298330A (en, 2012) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2233786A1 (de) * | 1972-01-24 | 1974-01-31 | Licentia Gmbh | Thyristor mit erhoehter ein- und durchschaltgeschwindigkeit |
| FR2516704A1 (fr) * | 1981-11-13 | 1983-05-20 | Thomson Csf | Thyristor a faible courant de gachette immunise par rapport aux declenchements |
| EP0420164A1 (en) * | 1989-09-29 | 1991-04-03 | Mitsubishi Denki Kabushiki Kaisha | Bipolar power semiconductor device and method for making the same |
| US5229313A (en) * | 1989-09-29 | 1993-07-20 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor device having multilayer structure |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3964090A (en) * | 1971-12-24 | 1976-06-15 | Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. | Semiconductor controlled rectifier |
| DE2164644C3 (de) * | 1971-12-24 | 1979-09-27 | Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg | Steuerbarer Halbleitergleichrichter |
| US4079409A (en) * | 1973-11-27 | 1978-03-14 | Licentia Patent-Verwaltungs G.M.B.H. | Thyristor with pressure contacting |
| US4096623A (en) * | 1974-07-01 | 1978-06-27 | Siemens Aktiengesellschaft | Thyristor and method of producing the same |
| DE2457106A1 (de) * | 1974-12-03 | 1976-06-10 | Siemens Ag | Thyristor |
| US4091409A (en) * | 1976-12-27 | 1978-05-23 | Rca Corporation | Semiconductor device having symmetrical current distribution |
| GB1558840A (en) * | 1977-02-07 | 1980-01-09 | Rca Corp | Gate controlled semiconductor device |
| US4581626A (en) * | 1977-10-25 | 1986-04-08 | General Electric Company | Thyristor cathode and transistor emitter structures with insulator islands |
| US4356503A (en) * | 1978-06-14 | 1982-10-26 | General Electric Company | Latching transistor |
| DE2923693A1 (de) * | 1978-06-14 | 1980-01-03 | Gen Electric | Schalttransistor |
| US4236171A (en) * | 1978-07-17 | 1980-11-25 | International Rectifier Corporation | High power transistor having emitter pattern with symmetric lead connection pads |
| DE3005458A1 (de) * | 1980-01-16 | 1981-07-23 | BBC AG Brown, Boveri & Cie., Baden, Aargau | Thyristor zum verlustarmen schalten kurzer impulse |
| US4622572A (en) * | 1980-05-23 | 1986-11-11 | General Electric Company | High voltage semiconductor device having an improved DV/DT capability and plasma spreading |
| JPS56131955A (en) * | 1980-09-01 | 1981-10-15 | Hitachi Ltd | Semiconductor device |
| GB2145559A (en) * | 1983-08-26 | 1985-03-27 | Philips Electronic Associated | Interdigitated semiconductor device |
| DE3446789A1 (de) * | 1984-12-21 | 1986-07-03 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zum herstellen von halbleiterbauelementen |
| DE3573357D1 (en) * | 1984-12-27 | 1989-11-02 | Siemens Ag | Semiconductor power switch |
| US4812890A (en) * | 1985-11-19 | 1989-03-14 | Thompson-Csf Components Corporation | Bipolar microwave integratable transistor |
| GB9125260D0 (en) * | 1991-11-27 | 1992-01-29 | Texas Instruments Ltd | A pnpn semiconductor device |
| KR101679108B1 (ko) | 2010-06-21 | 2016-11-23 | 에이비비 슈바이쯔 아게 | 국부적 에미터 쇼트 도트들의 개선된 패턴을 갖는 위상 제어 사이리스터 |
| WO2022048919A1 (en) | 2020-09-03 | 2022-03-10 | Hitachi Energy Switzerland Ag | Power semiconductor device |
| CN118136622A (zh) * | 2022-12-02 | 2024-06-04 | 力特半导体（无锡）有限公司 | 具有高抗干扰性的scr结构 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514562B2 (de) * | 1965-09-07 | 1972-12-07 | Semikron Gesellschaft fur Gleich richterbau und Elektronik mbH, 8500 Nurn berg | Anordnung zur herstellung eines halbleiter-bauelementes |
| US3475235A (en) * | 1966-10-05 | 1969-10-28 | Westinghouse Electric Corp | Process for fabricating a semiconductor device |
| US3480802A (en) * | 1966-11-16 | 1969-11-25 | Westinghouse Electric Corp | High power semiconductor control element and associated circuitry |
| US3476992A (en) * | 1967-12-26 | 1969-11-04 | Westinghouse Electric Corp | Geometry of shorted-cathode-emitter for low and high power thyristor |
-
1970
- 1970-10-12 US US80110A patent/US3619738A/en not_active Expired - Lifetime
- 1970-10-13 GB GB48657/70A patent/GB1298330A/en not_active Expired
- 1970-10-13 DE DE2050289A patent/DE2050289B2/de not_active Ceased
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2233786A1 (de) * | 1972-01-24 | 1974-01-31 | Licentia Gmbh | Thyristor mit erhoehter ein- und durchschaltgeschwindigkeit |
| FR2516704A1 (fr) * | 1981-11-13 | 1983-05-20 | Thomson Csf | Thyristor a faible courant de gachette immunise par rapport aux declenchements |
| EP0420164A1 (en) * | 1989-09-29 | 1991-04-03 | Mitsubishi Denki Kabushiki Kaisha | Bipolar power semiconductor device and method for making the same |
| US5111267A (en) * | 1989-09-29 | 1992-05-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a multilayer electrode structure and method for fabricating the same |
| US5229313A (en) * | 1989-09-29 | 1993-07-20 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor device having multilayer structure |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1298330A (en) | 1972-11-29 |
| US3619738A (en) | 1971-11-09 |
| DE2050289B2 (de) | 1980-07-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8235 | Patent refused |