EP0193603A1 - Procede photolitographique utilisant une matiere photographique positive de protection contenant un agent indecolorable d'absorption de la lumiere - Google Patents

Procede photolitographique utilisant une matiere photographique positive de protection contenant un agent indecolorable d'absorption de la lumiere

Info

Publication number
EP0193603A1
EP0193603A1 EP85904900A EP85904900A EP0193603A1 EP 0193603 A1 EP0193603 A1 EP 0193603A1 EP 85904900 A EP85904900 A EP 85904900A EP 85904900 A EP85904900 A EP 85904900A EP 0193603 A1 EP0193603 A1 EP 0193603A1
Authority
EP
European Patent Office
Prior art keywords
layer
photosensitive coating
light
photosensitive
dye
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP85904900A
Other languages
German (de)
English (en)
Other versions
EP0193603A4 (fr
Inventor
Colin W. T. Knight
William H. Arnold, Iii
Andrew Victor Brown
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of EP0193603A1 publication Critical patent/EP0193603A1/fr
Publication of EP0193603A4 publication Critical patent/EP0193603A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Definitions

  • This invention relates to the production of elec ⁇ trical devices using photolithography. More parti- 5 cularly, this invention relates to improvements in photolithography utilizing positive photoresist to provide sharper resolution by reducing reflected radiation.
  • the photosensitive layer is partially transparent and that the underlying substrate (e.g., polysilicon, aluminum, or sili-
  • inter ⁇ mediate resist layer which is chemically dissimilar so that neither layer is soluble in the other's developer.
  • Near-UV radiation is used to expose the top layer while deep-UV is used to expose the
  • the absorbing agent is used in an amount sufficient to absorb enough radiation to prevent any substantial reflection back through the photo ⁇ sensitive coating layer of radiation initially passing through the layer from an external radia- tion source to the material beneath said photosen ⁇ sitive coating layer.
  • Figure 2 is a fragmentary cross-sectional view of a subsequent stage of the process.
  • Figure 3 is a fragmentary cross-sectional view of a further step of the process.
  • the invention comprises an improved photolitho ⁇ graphy process which results in the reduction of reflection damage in microlithographic imaging by increasing the optical density or absorbance of a positive photosensitive layer or photoresist through the addition to the positive photosensitive layer of a suitably chosen unbleachable light ab ⁇ sorbing agent.
  • the concentration of the unbleachable absorbing agent, when added as a dye to the photoresist, may vary from 0.1 to 1.0% by weight of the total photo- sensitive material.
  • the dye is used in a concentration of from 0.25 to 0.5 weight per cent.
  • the amount of dye used is very important because a minimum amount must be used to realize the beneficial effects of the invention, i.e., to provide sufficient absorption of reflected light.
  • the amount of dye used will permit the passage of enough light through the layer to properly expose the photoresist but will be present in an amount sufficient to absorb light reflected from the substrate beneath the photore- sist back into the photoresist layer.
  • the amount of -dye used should, therefore, add about 0.225 to 0.45 micron " to the absorption coefficient to provide sufficient additional absorbance to inhibit reflec ⁇ tion of light back through the positive photore- sist.
  • the dye is preselected to have a high absorption at the wavelength used to pattern the photosensitive coating, e.g., 436 nm, while exhibiting high transmission of light at another preselected wavelength used to align the mask used in patterning with previous patterns in layers underlying the photosensitive coating, e.g., 633 nm. , or, in some cases, a broad band of from 500 -700 nm.
  • the absorbing dye used will be one which also will fluoresce upon exposure to radiation thereby pro ⁇ viding, as an additional benefit, the potential ability to measure and inspect micron-level- resist features through the use of fluorescence microscopy as opposed to conventional bright-field microscopy.
  • a particularly preferred dye which has been found to be useful in the practice of the invention is a dye distributed under the trademark COUMARIN 504 by Exciton Corporation of Dayton, Ohio, or COUMARIN
  • a 1 micron film of aluminum containing 1% silicon and 0.5% copper was sputter deposited on a sub ⁇ strate.
  • a positive photoresist coating containing 0.3% by weight COUMARIN 504 was deposited on the aluminum film. to a thickness of 1.6 micron.
  • the dye-containing photoresist was soft baked at 100°C for 300 seconds in an infrared convection track oven.
  • the baked resist was then exposed to a pattern of 436 nm light for about 0.50 seconds at an intensity of roughly 300 milliwatts per square centimeter.
  • the exposed resist was then developed with an AZ351 developer in a ratio of 1 part devel ⁇ oper to 5 parts water at 21°C for 180 seconds.
  • the resist was then rinsed with deionized water and allowed to dry.
  • the invention provides an improved process wherein a' photoresist material is provided with a selected amount of a light absorbing dye capable of absorbing a sufficient amount of light at the wave length of exposure whereby the radiation used to expose the photoresist will be absorbed sufficient ⁇ ly by the dye therein to prevent or inhibit the reflectance back into the photoresist layer of light from the underlying* substrate thereby reduc- ing or eliminating standing waves as well as scat ⁇ tered light which would otherwise result from such reflection.

Abstract

Un procédé photolithographique de fabrication d'un dispositif électrique, tel qu'un dispositif à circuit intégré, comprend le revêtement d'un matériau (30) avec une couche de revêtement photosensible positif (40) contenant un agent d'absorption indécolorable, tel qu'un colorant capable d'absorber des rayonnements électromagnétiques d'une longueur d'onde prédéterminée. Le colorant est utilisé en une quantité adéquate pour absorber suffisamment de rayonnements pour empêcher toute réflexion sensible à travers la couche de revêtement photosensible (40) de rayonnement ayant initialement traversé cette couche allant d'une source extérieure de rayonnements jusqu'au matériau (30) situé sous cette couche de revêtement photosensible (40). La couche de revêtement photosensible est exposé à une image lumineuse pour former un dessin sur la couche photosensible (40), et ensuite développée pour enlever sélectivement des parties du revêtement photosensible (40), l'absence sensible de lumière réfléchie permettant alors à une image nettement définie de se former en conformité avec le modèle lumineux sélectif transmis au revêtement photosensible (40).
EP19850904900 1984-09-13 1985-09-12 Procede photolitographique utilisant une matiere photographique positive de protection contenant un agent indecolorable d'absorption de la lumiere. Withdrawn EP0193603A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65095784A 1984-09-13 1984-09-13
US650957 1984-09-13

Publications (2)

Publication Number Publication Date
EP0193603A1 true EP0193603A1 (fr) 1986-09-10
EP0193603A4 EP0193603A4 (fr) 1988-04-06

Family

ID=24611023

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19850904900 Withdrawn EP0193603A4 (fr) 1984-09-13 1985-09-12 Procede photolitographique utilisant une matiere photographique positive de protection contenant un agent indecolorable d'absorption de la lumiere.

Country Status (3)

Country Link
EP (1) EP0193603A4 (fr)
JP (1) JPS62500202A (fr)
WO (1) WO1986001914A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62177187A (ja) * 1986-01-30 1987-08-04 Sumitomo Suriim Kk 金属画像の形成方法
US4782009A (en) * 1987-04-03 1988-11-01 General Electric Company Method of coating and imaging photopatternable silicone polyamic acid
DE3735852A1 (de) * 1987-10-23 1989-05-03 Hoechst Ag Positiv arbeitendes lichtempfindliches gemisch, enthaltend einen farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches aufzeichnungsmaterial
KR930008866B1 (ko) * 1990-04-20 1993-09-16 가부시키가이샤 도시바 반도체장치 및 그 제조방법
US20230408422A1 (en) * 2022-06-16 2023-12-21 Kla Corporation System and method for reducing sample noise using selective markers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2025633A1 (fr) * 1968-12-09 1970-09-11 Kalle Ag
US4370405A (en) * 1981-03-30 1983-01-25 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
JPS58174941A (ja) * 1982-04-08 1983-10-14 Tokyo Ohka Kogyo Co Ltd 新規な吸光剤及びそれを含有するホトレジスト組成物
EP0159428A1 (fr) * 1982-09-30 1985-10-30 Brewer Science, Inc. Couche antiréfléchissante

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4102683A (en) * 1977-02-10 1978-07-25 Rca Corp. Nonreflecting photoresist process
JPS6046422B2 (ja) * 1978-12-07 1985-10-16 東京応化工業株式会社 新規なフオトレジスト組成物
US4362809A (en) * 1981-03-30 1982-12-07 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
JPH05345180A (ja) * 1992-06-12 1993-12-27 Umehara Jiro 水質改善方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2025633A1 (fr) * 1968-12-09 1970-09-11 Kalle Ag
US4370405A (en) * 1981-03-30 1983-01-25 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
JPS58174941A (ja) * 1982-04-08 1983-10-14 Tokyo Ohka Kogyo Co Ltd 新規な吸光剤及びそれを含有するホトレジスト組成物
EP0159428A1 (fr) * 1982-09-30 1985-10-30 Brewer Science, Inc. Couche antiréfléchissante

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
CHEMICAL ABSTRACTS, vol. 101, no. 16, 15th October 1984, page 642, abstract no. 140939s, Columbus, Ohio, US; M.P.C. WATTS: "A high-sensitivity two-layer resist process for use in high resolution optical lithography", & PROC. SPIE-INT. SOC. OPT. ENG. 1984, 469 (ADV. RESIST TECHNOL.) 2-10 *
CHEMICAL ABSTRACTS, vol. 103, no. 10, 9th September 1985, page 542, abstract no. 79352t, Columbus, Ohio, US; J.F. BOHLAND et al.: "Effects of dye additions on the exposure and development characteristics of positive photoresists", & PROC. SPIE-INT. SOC. OPT. ENG. 1985, 539 (ADV. RESIST TECHNOL. PROCESSING 2), 267-74 *
CHEMICAL ABSTRACTS, vol. 99, no. 6, August 1983, page 486, abstract no. 45981f, Columbus, Ohio, US; P. KOLODNER et al.: "End-point detection and etch-rate measurement during reactive-ion etching using fluorescent polymer films", & J. VAC. SCI. TECHNOL., B 1983, 1(2), 501-4 *
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 16, no. 1, June 1973, pages 334-336, New York, US; A.R. NEUREUTHER: "Photoresist containing absorbing dye" *
PATENT ABSTRACTS OF JAPAN, vol. 8, no. 14 (P-249)[1451], 21st January 1984; & JP-A-58 174 941 (TOKIYOU OUKA KOGYO K.K.) 14-10-1983 *
See also references of WO8601914A1 *

Also Published As

Publication number Publication date
JPS62500202A (ja) 1987-01-22
WO1986001914A1 (fr) 1986-03-27
EP0193603A4 (fr) 1988-04-06

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Inventor name: ARNOLD, WILLIAM, H., III

Inventor name: BROWN, ANDREW, VICTOR

Inventor name: KNIGHT, COLIN, W., T.