EP0152606B1 - Matériau de contact et procédé de préparation de pièces de contact - Google Patents

Matériau de contact et procédé de préparation de pièces de contact Download PDF

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Publication number
EP0152606B1
EP0152606B1 EP84115754A EP84115754A EP0152606B1 EP 0152606 B1 EP0152606 B1 EP 0152606B1 EP 84115754 A EP84115754 A EP 84115754A EP 84115754 A EP84115754 A EP 84115754A EP 0152606 B1 EP0152606 B1 EP 0152606B1
Authority
EP
European Patent Office
Prior art keywords
weight percent
tungsten
contact
contact material
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP84115754A
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German (de)
English (en)
Other versions
EP0152606A2 (fr
EP0152606A3 (en
Inventor
Joachim Grosse
Günter Tiefel
Wolfgang Haufe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0152606A2 publication Critical patent/EP0152606A2/fr
Publication of EP0152606A3 publication Critical patent/EP0152606A3/de
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/021—Composite material
    • H01H1/023—Composite material having a noble metal as the basic material
    • H01H1/0237—Composite material having a noble metal as the basic material and containing oxides
    • H01H1/02372—Composite material having a noble metal as the basic material and containing oxides containing as major components one or more oxides of the following elements only: Cd, Sn, Zn, In, Bi, Sb or Te
    • H01H1/02376—Composite material having a noble metal as the basic material and containing oxides containing as major components one or more oxides of the following elements only: Cd, Sn, Zn, In, Bi, Sb or Te containing as major component SnO2
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0021—Matrix based on noble metals, Cu or alloys thereof

Definitions

  • the invention relates to a contact material, in particular for contact pieces in low-voltage switching devices, which consists of silver, tin oxide and other additives.
  • the invention relates to a method for manufacturing contact pieces from this material.
  • AgSn0 2 contacts have a lower erosion compared to AgCdO, which leads to an increased contact life. Therefore, the size of the required contact pieces can advantageously be reduced in comparison to AgCdO, whereby a not inconsiderable saving in silver is achieved.
  • EP-B1-0 024 349 a material based on AgSn0 2 is known, in which the excess temperature is reduced compared to the pure AgSn0 2 by adding tungsten oxide (W0 3 );
  • EP-B1-0 0 39 429 proposes bismuth oxide (Bi 2 0 3 ) as a further additive, with which the welding force is to be influenced favorably without increasing the contact resistance.
  • EP-A1-0 056 857 states that the overtemperature behavior can also allegedly be improved by molybdenum oxide (Mo03) and / or germanium oxide (Ge0 2 ).
  • Mo03 molybdenum oxide
  • Ge0 2 germanium oxide
  • Mo03 deteriorates the erosion behavior of AgSn0 2 in such a way that the contact life falls far below that of AgCdO.
  • These disadvantages do not occur when using Ge0 2 ; however, due to the high price of germanium oxide, which is a multiple of that of silver, the contact piece becomes significantly more expensive. This largely eliminates the economic advantage of using AgSn0 2 , namely saving silver due to the favorable burning behavior compared to AgCdO.
  • the object of the invention is therefore to develop an electrical contact material based on silver and tin oxide, in which the excess temperature compared to the known AgSnOr material is specifically reduced by adding further additives.
  • the aim is neither to significantly reduce the contact life nor to make the material excessively expensive.
  • the object is achieved in that the new material 5 to 20 mass% SnO 2 , 0.1 to 5 mass% Ta 2 0 5 , 0.1 to 5 mass% CuO. Contains 0.1 to 5 mass% Bi 2 0 3 and the balance silver.
  • tungsten or oxygen-containing tungsten compounds can also be present, the proportion of tungsten being 0.05 to 3% by mass.
  • the invention shows in particular the advantageous property of tantalum oxide in conjunction with bismuth oxide and predetermined amounts of CuO and optionally tungsten in the case of contact materials based on silver-tin oxide.
  • WO-A1-80 / 01434 has already suggested that tantalum oxide also be used in contact materials.
  • tantalum is used either as cadmium tantalum oxide or as tantalum oxide in conjunction with at least germanium. Because of the favorable wetting properties of the tantalum oxide, the contact erosion is favorably influenced in the material there. It was not previously recognized that tantalum oxide can be used as an additive in silver-tin oxide-based contact materials in conjunction with bismuth oxide.
  • the overtemperature in the contact material according to the invention is on the one hand up to about 20% lower than in AgSn0 2 11.5 W0 3 0.5; on the other hand, the welding force has values comparable to those of known AgCdO materials.
  • an optimized contact material with low overtemperature and a sufficient service life can now be used.
  • the materials according to the invention can be produced by known powder metallurgical processes.
  • the material is advantageously subjected to an extrusion into a strip after sintering, as a result of which a straightening structure is produced.
  • the directional structure runs parallel to the longitudinal edges, the contact pieces being able to be hard-soldered onto the contact carriers of the conventional switching devices.
  • Powders of the components Ag, SnO 2 , Ta 2 0 5 , CuO and Bi 2 0 3 are used as starting materials, a composition in mass fractions of 91.4% Ag, 7.5% Sn0 2 , 0.5% Ta 2 0 5 , 0.3% CuO and 0.3% Bi 2 0 3 is selected.
  • the powder batch is mixed and then subjected to powder metallurgical process steps from pressing, sintering and post-pressing with the usual pressures and temperatures: For example, 200 MPa have been used for pressing the powder, 850-900 ° C for one hour in air and 600 for pressing MPa proved to be suitable values.
  • a strip as a semi-finished product is produced from the blank by extrusion at 700 ° C, from which contact pieces with a directional structure parallel to the edges can be separated.
  • the contact pieces manufactured in this way can be hard-soldered directly onto the contact carriers of a conventional switching device.
  • Powders of the components are used as in Example 1, with a composition in proportions by mass of 87.7% Ag, 10.5% SnO 2 , 0.8% Ta 2 0 5 , 0.5% CuO and 0.5% Bi 2 0 3 is selected.
  • the other manufacturing steps correspond to those of Example 1.
  • powders of the components Ag, Sn0 2 , Ta 2 0 5 , CuO are used as starting materials.
  • Bi 2 0 3 and additionally powder made of pure tungsten are used.
  • a mixture with mass fractions of 91.7% Ag, 7.0% Sn0 2 , 0.5% Ta 2 0 5 , 0.3% CuO, 0.3% Bi 2 0 3 and 0.2% W is selected .
  • the powder batch is mixed and then subjected to the usual powder metallurgical process steps from pressing, sintering and post-pressing.
  • a strip as a semi-finished product is produced from the blank by extrusion, from which contact pieces with a parallel alignment structure can be separated.
  • Powders of the components are used as in Example 3, but now a composition in mass fractions with 87.5% Ag, 10.5% Sn0 2 , 0.8% Ta 2 0 5 , 0.5% CuO, 0.4% Bi 2 0 3 and 0.3% W is selected.
  • the contact pieces were connected until the original button was remelted due to arcing. This required a few thousand switching operations. Under the highest continuous current load permitted for the switchgear, the temperature on the movable contact piece was measured directly below the contact pieces. It has been shown that the influence of the contact material can best be detected at this point.
  • the excess temperatures measured at the connection terminals for the reference material AgSn0 2 11.5 W0 3 0.5 are 33% higher than for AgCd012, while the pure AgSn0 2 materials are more than 44% higher. It can be seen that the materials according to the invention have excess temperatures which are between 7 and 23% lower than those of the comparative material AgSn0 2 11.5 W0 3 0.5 and thus at best reach the temperatures of AgCdO.
  • the materials according to the invention with added tungsten are even above the comparative material AgSn0 2 11.5 W0 3 0.5, while the materials according to the invention without tungsten achieve switching numbers comparable to the corresponding pure AgSnO 2 materials, but are due to the most favorable overtemperature behavior of all examined AgSn0 Mark 2 materials (with the same oxide content).
  • Tests with tungsten-containing AgSn0 2 contact materials in various switching devices generally confirm the favorable service life behavior, but with certain AC switching devices, material shifting can occur, which can lead to premature failure of the switching device.
  • contact material is transferred from one contact piece to the opposite, so that the material-releasing contact piece limits the service life of the switching device by switching through to the carrier material before the prescribed number of switching operations has been reached.
  • the causes of this material shift are not yet known, but seem to be related to the addition of tungsten or oxygen-containing tungsten compounds, since they have not previously occurred with tungsten-free AgSn0 2 materials. For these reasons, the behavior with regard to material displacement must first be checked before using the tungsten-containing AgSn0 2 materials.
  • the material according to the invention can be used as a substitute for AgCdO without tungsten addition, which, with a volume reduction of approximately 20%, still has a favorable combustion behavior compared to AgCdO.
  • the materials according to the invention with added tungsten compared to AgSn0 2 11.5 W0 3 0.5 have a longer service life at a lower excess temperature, while the materials according to the invention without tungsten are characterized by a lack of material displacement, very favorable excess temperature and a longer service life compared to AgCdO, which, however, are not completely reached the values of Agsn0 2 11.5 W0 3 0.5.
  • the percentage composition of the material can be further varied with the special oxide combination Sn0 2 , Ta 2 0 5 , CuO and Bi 2 0 3 and optionally W.
  • the tungsten can be added either as pure tungsten or as tungsten oxide (WO 3 ) or other oxygen-containing tungsten compounds without the properties of the contact material being impaired.
  • the material costs of the individual additional components are only about 40% compared to Ge0 2, which has so far been found to be particularly favorable. This enables the object of the invention to create an inexpensive contact material with favorable temperature behavior. Overall, suitable contact pieces for switching devices can now be produced.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Contacts (AREA)

Claims (12)

1. Matériau de contact, en particulier pour plots de contact d'appareils d'interruption basse tension, qui est constitué d'argent, oxyde d'étain et d'autres additifs, caractérisé en ce qu'il contient, outre l'argent, 5 à 20 % en masse de Sn02, 0,1 à 5 % en masse de Ta205, 0,1 à 5 % en masse de CuO, 0,1 à 5 % en masse de Bi203.
2. Matériau selon la revendication 1, caractérisé en ce qu'il contient, en plus, du tungstène ou des composés de tungstène contenant de l'oxygène, la fraction de tungstène étant de 0.05 à 3 % en masse.
3. Matériau selon la revendication 1, caractérisé en ce qu'il contient, outre l'argent, 7 à 14 % en masse de SnO2, 0,2 à 1,5 % en masse de Ta205, 0,2 à 1,5 % en masse de CuO, 0,1 à 1,2 % en masse de Bi2 0 3.
4. Matériau selon les revendications 2 et 3, caractérisé en ce que la fraction de tungstène représente 0,05 à 1 % en masse.
5. Matériau selon la revendication 3, caractérisé en ce qu'il contient 7,5 % en masse de Sn02, 0,5 % en masse de T205, 0,3 % en masse de CuO, 0,3 % en masse de Bi203 et le reste argent.
6. Matériau selon la revendication 3, caractérisé en ce qu'il contient 10.5 % en masse de Sn02, 0.8 % en masse de Ta205, 0,5 % en masse de CuO, 0,5 % en masse de Bi203 et le reste argent.
7. Matériau selon les revendications 2 et 3, caractérisé en ce qu'il contient 7,0 % SnO2, 0,5 % Ta205, 0.5 % CuO, 0.3 % Biz03, 0,2 % W et le reste argent.
8. Matériau selon la revendication 3, caractérisé en ce qu'il contient 10,5 % en masse de Sn02. 0,8 % en masse de Ta2O5, 0,5 % en masse de CuO. 0.4 % en masse de Bi203, 0,3 % en masse de W et le reste argent.
9. Matériau selon la revendication 2, caractérisé en ce que le composé de tungstène contenant de l'oxygène est un oxyde (W03).
10. Procédé pour fabriquer des plots de contact d'un matériau de contact selon la revendication 1 ou une des revendications 2 à 9, caractérisé en ce que, après mélange des différents constituants en une préparation de poudres, on produit le matériau par compression, frittage et recompression et que, ensuite, on crée, par extrusion un demi-produit sous forme d'une bande avec une structure orientée, dont on sépare des plots de contact, de manière que la structure orientée s'étende parallèlement aux arêtes longitudinales du plot de contact.
11. Procédé selon la revendication 10, caractérisé en ce que l'on ajoute le tungstène à la préparation de poudres sous forme d'une poudre de tungstène.
12. Procédé selon la revendication 10, caractérisé en ce que l'on ajoute le tungstène à la préparation de poudres sous forme d'une poudre d'oxyde de tungstène (W03).
EP84115754A 1984-01-30 1984-12-18 Matériau de contact et procédé de préparation de pièces de contact Expired EP0152606B1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE3403115 1984-01-30
DE3403115 1984-01-30
DE3428070 1984-07-30
DE3428070 1984-07-30

Publications (3)

Publication Number Publication Date
EP0152606A2 EP0152606A2 (fr) 1985-08-28
EP0152606A3 EP0152606A3 (en) 1985-09-25
EP0152606B1 true EP0152606B1 (fr) 1987-09-09

Family

ID=25818007

Family Applications (1)

Application Number Title Priority Date Filing Date
EP84115754A Expired EP0152606B1 (fr) 1984-01-30 1984-12-18 Matériau de contact et procédé de préparation de pièces de contact

Country Status (3)

Country Link
US (1) US4565590A (fr)
EP (1) EP0152606B1 (fr)
DE (1) DE3466122D1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3304637A1 (de) * 1983-02-10 1984-08-16 Siemens AG, 1000 Berlin und 8000 München Sinterkontaktwerkstoff fuer niederspannungsschaltgeraete
DE3421758A1 (de) * 1984-06-12 1985-12-12 Siemens AG, 1000 Berlin und 8000 München Sinterkontaktwerkstoff fuer niederspannungsschaltgeraete der energietechnik und verfahren zu dessen herstellung
JPS6355822A (ja) * 1986-08-26 1988-03-10 松下電工株式会社 接点材料
US4904317A (en) * 1988-05-16 1990-02-27 Technitrol, Inc. Erosion resistant Ag-SnO2 electrical contact material
EP0369283B1 (fr) * 1988-11-17 1994-09-14 Siemens Aktiengesellschaft Matériau de contact fritté pour appareillages interrupteurs à basse tension de la technique de l'énergie, spécialement pour des contacteurs
FR2639466B1 (fr) * 1988-11-22 1991-02-15 Telemecanique Procede de preparation d'un materiau de contact electrique et procede de fabrication d'un element de contact incorporant un tel materiau
US5258052A (en) * 1992-06-18 1993-11-02 Advanced Metallurgy Incorporated Powder metallurgy silver-tin oxide electrical contact material
US5569412A (en) * 1994-08-18 1996-10-29 E. I. Du Pont De Nemours And Company Tin oxide based conductive powders and coatings
DE19503182C1 (de) * 1995-02-01 1996-05-15 Degussa Sinterwerkstoff auf der Basis Silber-Zinnoxid für elektrische Kontakte und Verfahren zu dessen Herstellung
US5846288A (en) * 1995-11-27 1998-12-08 Chemet Corporation Electrically conductive material and method for making
WO2011125244A1 (fr) * 2010-04-09 2011-10-13 三菱マテリアル株式会社 Composition argileuse pour la formation d'un objet fritté, poudre pour une composition argileuse pour la formation d'un objet fritté, procédé pour la fabrication d'une composition argileuse pour la formation d'un objet fritté, objet en argent fritté et procédé pour la fabrication d'un objet en argent fritté
CN110643847B (zh) * 2019-10-18 2021-08-27 宁波汉博贵金属合金有限公司 银氧化锡电接触材料的制备方法
CN112760513B (zh) * 2020-12-30 2022-04-15 宁波东大神乐电工合金有限公司 一种银氧化锡电触头材料及其制备工艺

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DE807416C (de) * 1949-10-20 1951-06-28 Eugen Duerrwaechter Dr Ing Elektrischer Kontaktwerkstoff und Verfahren zu Seiner Herstellung
CH588152A5 (fr) * 1972-12-11 1977-05-31 Siemens Ag
US3992199A (en) * 1973-12-03 1976-11-16 P. R. Mallory & Co., Inc. Method of making electrical contact materials
JPS5222767A (en) * 1975-08-13 1977-02-21 Matsushita Electric Ind Co Ltd Electric contact material
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DE2933338C3 (de) * 1979-08-17 1983-04-28 Degussa Ag, 6000 Frankfurt Werkstoff für elektrische Kontakte und Verfahren zu seiner Herstellung
DE3017424A1 (de) * 1980-05-07 1981-11-12 Degussa Ag, 6000 Frankfurt Werkstoff fuer elektrische kontakte
DE3102067A1 (de) * 1981-01-23 1982-08-19 Degussa Ag, 6000 Frankfurt Werkstoff fuer elektrische kontakte
JPS5827904A (ja) * 1981-08-10 1983-02-18 Matsushita Electric Works Ltd 電気接点材料の製法
DE3146972A1 (de) * 1981-11-26 1983-06-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von formteilen aus cadmiumfreien silber-metalloxid-verbundwerkstoffen fuer elektrische kontaktstuecke
JPS5896835A (ja) * 1981-12-02 1983-06-09 Tanaka Kikinzoku Kogyo Kk 電気接点材料
JPS58117844A (ja) * 1981-12-29 1983-07-13 Matsushita Electric Works Ltd 電気接点材料
US4462841A (en) * 1982-04-23 1984-07-31 Mitsubishi Kinzoku Kabushiki Kaisha Silver-metal oxide alloy electrical contact materials
JPS596342A (ja) * 1982-06-30 1984-01-13 Matsushita Electric Works Ltd 電気接点材料

Also Published As

Publication number Publication date
EP0152606A2 (fr) 1985-08-28
US4565590A (en) 1986-01-21
DE3466122D1 (en) 1987-10-15
EP0152606A3 (en) 1985-09-25

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