EP0148357A1 - Verfahren zum chemischen Abscheiden von siliziumdotierten intermetallischen Halbleiterverbindungen unter Verwendung metallorganischer Dämpfe - Google Patents

Verfahren zum chemischen Abscheiden von siliziumdotierten intermetallischen Halbleiterverbindungen unter Verwendung metallorganischer Dämpfe Download PDF

Info

Publication number
EP0148357A1
EP0148357A1 EP84113329A EP84113329A EP0148357A1 EP 0148357 A1 EP0148357 A1 EP 0148357A1 EP 84113329 A EP84113329 A EP 84113329A EP 84113329 A EP84113329 A EP 84113329A EP 0148357 A1 EP0148357 A1 EP 0148357A1
Authority
EP
European Patent Office
Prior art keywords
silicon
metal organic
organic chemical
vapour deposition
chemical vapour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP84113329A
Other languages
English (en)
French (fr)
Other versions
EP0148357B1 (de
Inventor
Thomas Francis Kuech
Bernard Steele Meyerson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP0148357A1 publication Critical patent/EP0148357A1/de
Application granted granted Critical
Publication of EP0148357B1 publication Critical patent/EP0148357B1/de
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Definitions

  • This invention relates to a metal organic chemical vapour deposition (MOCVD) process for depositing silicon doped intermetallic semiconductor compounds.
  • MOCVD metal organic chemical vapour deposition
  • the element silicon (Si) has been found to be desirable for incorporation as a dopant. Silicon however is exceptionally non-volatile. The low volatility of elemental silicon preempts its direct use in vapor phase growth. This is generally overcome by providing the silicon in the hydride silane (SiH 4 ). A description of the introduction of silicon as a dopant using silane (SiH 4 ) is given in J. Electro- chemical Society 126, No. 7, July 1979, p.1134 to 1142.
  • the crystalline material is grown atom by atom epitaxially, several requirements for the silicon source in order that the dopant enter the crystal in such a way that device specifications can be met.
  • the dopant must be present over the growing crystal in a concentration or flux that is uniform over the area and remains so for the duration of the growth period, in order to result in a crystal with a controlled doping concentration.
  • the source of silicon must be pure since small quantities of impurities can affect device performance.
  • the silicon source should also be capable of rapid changes in concentration over the surface of the growing crystal in order to reach both the concentrations and the rates of change of concentrations required for the device structures.
  • the invention seeks to provide a source of silicon which is more advantageous than silane (SiH 4 ) in a metal organic chemical vapour deposition process.
  • a metal organic chemical vapour deposition process for epitaxially depositing a silicon doped intermetallic semiconductor compound in which a gaseous hydride based silicon compound is used as a source of silicon is characterised by the hydride based silicon compound having a molecule containing at least two silicon atoms.
  • a metal organic chemical vapour deposition process for epitaxially depositing a silicon doped intermetallic semiconductor compound is characterised by employing a higher silane gas as a source of the silicon.
  • disilane (Si 2 H 6 ) and the higher hydride based silicon compounds when maintained in the gaseous state over a growing intermetallic semiconductor substrate, will serve as a source of silicon dopant in the growing crystal that provides a higher doping efficiency and a more uniform doping distribution yet achieved at a lower temperature than silane (SiH 4 ).
  • the higher silane compounds that are gaseous at lower temperatures, up to Si 3 H 8 , and the even higher silane compounds, up through Si 5 H 12 , 5 that can be maintained in the vapor state over the growing crystal are satisfactory dopant sources, with disilane (Si 2 H 6 ) being preferred.
  • the 6 growth of the intermetallic crystal can occur at temperatures greater than 500°C and there is no variation in doping efficiency with temperature variation.
  • the decomposition of the higher hydride based compounds of silicon takes less energy than the removal of hydrogen atoms from a single silicon atom such as the case in the decomposition of silane (SiH 4 ) and in turn the lower required energy permits efficient doping at lower temperatures, and less temperature sensitivity for uniform growth and doping.
  • the graph indicates the influence of growth temperature on electron concentration in gallium arsenide (GaAs).
  • This graph provides a comparison of dopant concentration when disilane, (Si 2 H 6 ) is used and when the prior art silane (SiH 4 ) is used under growth conditions of a constant amount of dopant and at a constant growth rate.
  • the temperature scale is in both degrees centigrade and reciprocal temperature. From the concentrations shown not only does more silicon enter the growing crystal when disilane is used thereby illustrating enhanced doping efficiency but also disilane doping is seen to be temperature independent.
  • the silicon dopant source in a process according to the invention permits control not achieved heretofore in the art.
  • the silicon doped GaAs crystal layers produced are characterized by room and low temperature photoluminescence, capacitance profiling and Van der pauw Hall measurements.
  • the substrates on which the intermetallic semiconductor crystals are to be grown are positioned on a hot susceptor and are then brought to an elevated temperature of the order of 550°C to 800°C while exposed to the gaseous silicon source.
  • an elevated temperature of the order of 550°C to 800°C while exposed to the gaseous silicon source.
  • the temperature across the area of the substrates it is common for the temperature across the area of the substrates to vary in the order of ⁇ 10°C.
  • a ⁇ 10°C variation in substrate temperature at 650°C would result in a ⁇ 20% variation in silicon dopant incorporation across a substrate so that the doping would not be homogenous.
  • a silicon source according to the process of the invention such as disilane (Si 2 H 6 ) is employed, the incorporation of silicon (as shown in the 6 graph) is independent of temperature and a ⁇ 10% temperature variation would have no effect on the doping concentration.
  • the process of the invention provides uniform doping even though temperature gradients may occur.
  • the doping efficiency is greater which permits higher conductivity device material to be made thereby providing intermetallic semiconductor material capable of meeting a wider range of device specifications.
  • one of the difficulties with gaseous sources is that there may be some uncontrollable impurities in the gas and these are carried into the growth chamber. Where the doping efficiency is high as with the present invention, the quantity of gas needed is less and thus the contamination from impurities in the gas is reduced.
  • silicon doped gallium arsenide is grown by metal organic chemical vapor deposition with the addition of a small amount of disilane (Si 2 H 6 ) to the gas phase ambient during the growth.
  • the disilane (Si 2 H 6 ) is markedly less stable than silane 2 (SiH 4 ), its decomposition by-products do not contaminate the gallium arsenide (GaAs) layers and the silicon enters the growing crystal so efficiently that the amount of dopant gas required at lower growth temperatures is reduced by two orders.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP84113329A 1983-12-08 1984-11-06 Verfahren zum chemischen Abscheiden von siliziumdotierten intermetallischen Halbleiterverbindungen unter Verwendung metallorganischer Dämpfe Expired EP0148357B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US559583 1983-12-08
US06/559,583 US4504331A (en) 1983-12-08 1983-12-08 Silicon dopant source in intermetallic semiconductor growth operations

Publications (2)

Publication Number Publication Date
EP0148357A1 true EP0148357A1 (de) 1985-07-17
EP0148357B1 EP0148357B1 (de) 1988-02-10

Family

ID=24234149

Family Applications (1)

Application Number Title Priority Date Filing Date
EP84113329A Expired EP0148357B1 (de) 1983-12-08 1984-11-06 Verfahren zum chemischen Abscheiden von siliziumdotierten intermetallischen Halbleiterverbindungen unter Verwendung metallorganischer Dämpfe

Country Status (4)

Country Link
US (1) US4504331A (de)
EP (1) EP0148357B1 (de)
JP (1) JPS60124818A (de)
DE (1) DE3469303D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162207B (en) 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
US5294286A (en) * 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
US4829022A (en) * 1985-12-09 1989-05-09 Nippon Telegraph And Telephone Corporation Method for forming thin films of compound semiconductors by flow rate modulation epitaxy
US4689094A (en) * 1985-12-24 1987-08-25 Raytheon Company Compensation doping of group III-V materials
US4699688A (en) * 1986-07-14 1987-10-13 Gte Laboratories Incorporated Method of epitaxially growing gallium arsenide on silicon
US4891091A (en) * 1986-07-14 1990-01-02 Gte Laboratories Incorporated Method of epitaxially growing compound semiconductor materials
JP2587623B2 (ja) * 1986-11-22 1997-03-05 新技術事業団 化合物半導体のエピタキシヤル結晶成長方法
US5827365A (en) * 1991-07-05 1998-10-27 Mitsubishi Kasei Corporation Compound semiconductor and its fabrication
JPH0541529A (ja) * 1991-08-06 1993-02-19 Sumitomo Electric Ind Ltd 化合物半導体素子およびその作製方法
US5599735A (en) * 1994-08-01 1997-02-04 Texas Instruments Incorporated Method for doped shallow junction formation using direct gas-phase doping
US5489550A (en) * 1994-08-09 1996-02-06 Texas Instruments Incorporated Gas-phase doping method using germanium-containing additive
US5641707A (en) * 1994-10-31 1997-06-24 Texas Instruments Incorporated Direct gas-phase doping of semiconductor wafers using an organic dopant source of phosphorus
US5580382A (en) * 1995-03-27 1996-12-03 Board Of Trustees Of The University Of Illinois Process for forming silicon doped group III-V semiconductors with SiBr.sub.4
US5976941A (en) * 1997-06-06 1999-11-02 The Whitaker Corporation Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates
JP4632533B2 (ja) * 2000-12-27 2011-02-16 旭テック株式会社 懸垂吊状耐張碍子装置
WO2006106644A1 (ja) * 2005-03-31 2006-10-12 Dowa Electronics Materials Co., Ltd. ＳｉドープＧａＡｓ単結晶インゴットおよびその製造方法、並びに、当該ＳｉドープＧａＡｓ単結晶インゴットから製造されたＳｉドープＧａＡｓ単結晶ウェハ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
JPS5412792B2 (de) * 1971-10-27 1979-05-25
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
US4128733A (en) * 1977-12-27 1978-12-05 Hughes Aircraft Company Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
US4329189A (en) * 1980-02-04 1982-05-11 Northern Telecom Limited Channelled substrate double heterostructure lasers

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 26, no. 3A, August 1983, New York, USA; D.C. GREEN et al. "CVD growth of silicon using higher-order silanes", pages 918-920 *
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 126, no. 7, July 1979, Manchester, USA; J.P. DUCHEMIN et al. "A new method for growing GaAs epilayers by low pressure organometallics", pages 1134-1142 *

Also Published As

Publication number Publication date
US4504331A (en) 1985-03-12
EP0148357B1 (de) 1988-02-10
JPS60124818A (ja) 1985-07-03
DE3469303D1 (en) 1988-03-17

Similar Documents

Publication Publication Date Title
EP0148357B1 (de) Verfahren zum chemischen Abscheiden von siliziumdotierten intermetallischen Halbleiterverbindungen unter Verwendung metallorganischer Dämpfe
Jones Developments in metalorganic precursors for semiconductor growth from the vapour phase
CA1036470A (en) Deposition of solid semiconductor compositions and novel semiconductor materials
EP0390552B1 (de) Verfahren zur Herstellung einer Dünnschichthalbleiterlegierung
US4716130A (en) MOCVD of semi-insulating indium phosphide based compositions
KR860700072A (ko) 단결정 실리콘 기판과 단결정 막의 합성물 및 그 형성방법
Kuech et al. Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs
US4830982A (en) Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
Takigawa et al. Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B2H6-PH3-H2 System
US4488914A (en) Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch
GB990161A (en) Semiconductor body
EP0524817B1 (de) Verfahren zur Kristallzüchtung eines III-V Verbindungshalbleiters
US5656538A (en) Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices
JP3386302B2 (ja) 化合物半導体へのｎ型ドーピング方法およびこれを用いた化学ビーム堆積方法並びにこれらの結晶成長方法によって形成された化合物半導体結晶およびこの化合物半導体結晶によって構成された電子デバイスおよび光デバイス
KR900006120B1 (ko) 도우펀트 운반 화합물로서 디에틸베릴륨을 사용하는 반도체 재료층의 에피택셜 증착방법
EP0293439B1 (de) Halbisolierende, auf iii-v-elementen basierende materialien
JPH0754802B2 (ja) ＧａＡｓ薄膜の気相成長法
KR900006121B1 (ko) 도우펀트 운반 화합물로서 테트라메틸주석을 사용하는 반도체 재료층의 에피택셜 증착방법
US6211539B1 (en) Semi-insulated indium phosphide based compositions
EP0141561B1 (de) Verfahren zur Herstellung von Bauelementen, die eine halbisolierende Zusammensetzung mit Indiumphosphid als Bestandteil haben
US5215938A (en) Process to obtain semi-insulating single crystalline epitaxial layers of arsenides and phosphides of metals of the group III of the periodic table useful to make electronic devices
JPS61275191A (ja) ＧａＡｓ薄膜の気相成長法
JP3141628B2 (ja) 化合物半導体素子及びその製造方法
JP2601712B2 (ja) 混晶を製造する材料節約式方法
EP0381456A1 (de) Dampfphasenwachstum von epitaktischen Kristallen

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19841214

AK Designated contracting states

Designated state(s): DE FR GB

17Q First examination report despatched

Effective date: 19860930

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB

REF Corresponds to:

Ref document number: 3469303

Country of ref document: DE

Date of ref document: 19880317

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 19951107

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 19951123

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 19961028

Year of fee payment: 13

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Effective date: 19970731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Effective date: 19970801

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19971106

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 19971106