EP0146798A2 - Procédé de décapage protégeant l'environnement pour circuits imprimés et appareil pour exécuter le procédé - Google Patents

Procédé de décapage protégeant l'environnement pour circuits imprimés et appareil pour exécuter le procédé Download PDF

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Publication number
EP0146798A2
EP0146798A2 EP84114317A EP84114317A EP0146798A2 EP 0146798 A2 EP0146798 A2 EP 0146798A2 EP 84114317 A EP84114317 A EP 84114317A EP 84114317 A EP84114317 A EP 84114317A EP 0146798 A2 EP0146798 A2 EP 0146798A2
Authority
EP
European Patent Office
Prior art keywords
etching
container
electrolytic cell
pump
etching solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP84114317A
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German (de)
English (en)
Other versions
EP0146798B1 (fr
EP0146798A3 (en
Inventor
Walter Senator H.C. Dr.H.C.Ing. Holzer
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Individual
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Individual
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Publication date
Application filed by Individual filed Critical Individual
Priority to AT84114317T priority Critical patent/ATE51648T1/de
Publication of EP0146798A2 publication Critical patent/EP0146798A2/fr
Publication of EP0146798A3 publication Critical patent/EP0146798A3/de
Application granted granted Critical
Publication of EP0146798B1 publication Critical patent/EP0146798B1/fr
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Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions

Definitions

  • the invention relates to a method and an apparatus for etching printed circuit boards.
  • the object of the invention is to develop a method with the appropriate device for carrying out the method, which both etches properly and ensures through proper regeneration that environmental problems caused by pouring away etching solution are avoided.
  • Such methods and devices can be offered, for example, to the non-specialist in electronic shops, where, for example, hobbyists can have circuit boards immediately etched according to their ideas and circuits.
  • the solution to the problem according to the invention is that kinetic energy, e.g. by vortexing by means of a circulating pump.
  • the etching solution can be regenerated and the etched copper is deposited in an electrolysis cell in order to avoid environmental pollution from waste materials. Since the regeneration of an ammoniacal etching solution requires oxygen and ammonia, which is otherwise generated during electrolysis, these two resulting gases are sucked out of the electrolysis cell above the liquid level and fed to the etching solution via a water jet pump (injector), the intimate mixing of the gases with the Etchant in the water jet pump ensures accelerated regeneration.
  • the copper deposition capacity of the electrolysis cell is higher than the etching capacity of the etching container, in order to avoid over-enrichment of the etching agent with copper. It should therefore be possible to deposit more copper than is added to the etchant in the etching container.
  • Another invention is the method which, regardless of the type, e.g. the copper is etched away from the circuit boards in achieving a continuous, metered supply of electrolyte (etchant) through the electrolytic cell, without a pump or other metering agent.
  • electrolyte etchant
  • a particularly simple embodiment for carrying out the method consists in designing an etching container with an electrolysis cell as communicating vessels.
  • the solution according to the invention is a common container which is divided by a partition into the etching chamber and the electrolysis cell, this partition being able to perform other tasks.
  • the partition wall can be formed from the arrangement sheet of the electrolysis cell which is required anyway and which has corresponding connection openings.
  • openings are provided in the lower part of the partition (anode sheet) which allow the inflow of etchant into the electrolysis cell. In the upper area of the partition (anode sheet), but still below the liquid level, there are also openings which allow the etchant to flow back allow from the electrolytic cell into the etching container.
  • This arrangement leads to a continuous slow circulation of the etchant through the electrolytic cell, where the copper is deposited on the cathode.
  • the flow is created on the one hand by the gas bubbles that form during the chemical reaction (e.g. oxygen and ammonia) and on the other hand by the thermal flow, since the electrolysis cell is supplied with the current of considerable intensity required to separate the copper.
  • the flow is supported by the reduction in the copper content due to deposits on the cathode and the resulting reduction in the specific weight of the electrolyte.
  • This arrangement according to the invention is not only extremely simple and effective, it makes the use of electrolyte pumps or other circulating means unnecessary.
  • the anode plate formed as an insertable partition it is possible by the size and arrangement of the V, the intensity of the flow ER binding holes to adjust the optimum conditions, and even optimized by changing the anode plates with different hole sizes, the flooding of the electrolysis cell to operating conditions adapt the system.
  • ion exchangers in the rinsing circuit which bind entrained copper residues or ammonia from the rinsing liquid. Since this is also a closed system in this case, a continuous depletion of the carried-over pollutants is sufficient and it is proposed to arrange the ion exchangers in the pressureless return of the flushing agent to the pump.
  • the ion exchangers are expediently designed as cassettes which are placed in chambers of the rinsing container, the excess rinsing agent, which cannot flow through the cassettes in the free passage, directly reaching the return to the pump. This also eliminates the need to connect or seal the ion exchanger in the chambers of the rinsing container.
  • the liquid level of the rinsing agent constantly above the inlet opening of the ion exchanger. This primarily prevents the ion exchange resins from drying out when the system is at a standstill.
  • a further improvement is that when the pump is switched off, the liquid level in the rinsing tank is set such that the ion exchange resin is always covered by the liquid.
  • the pump is switched on, the actual rinsing container is filled and rinsing liquid is pumped out of the chamber surrounding the ion exchanger. Since the rinsing liquid enters the ion exchanger at the top, there is a level difference which favors a flow through the ion exchanger.
  • it is further recommended at least partially perform the ion exchanger cassettes transparent and use a onenSermaterial I, showing a color change in saturation.
  • a circulating pump 1 is shown schematically, the pressure side 13 of which opens into a nozzle 9 via an injector 14.
  • the nozzle 9 is arranged in the etching or immersion container 5, the etching liquid is flung through this nozzle 9 against the surface of a printed circuit board 2 such that a certain kinetic energy supports the etching process.
  • the injector 14 has a connection from its suction side 15 via a suction pipe 16 to a suction opening 17 which opens out above the liquid level 4 of an electrolysis cell 3.
  • the electrolysis cell 3 Arranged in the electrolysis cell 3 is the anorde 8 (shown as a partition between the etching container 5 and the electrolysis cell 3) and the cathode 31, which serves for the deposition of the etched-off copper in a known manner.
  • the array 31 can be designed to be removable in the direction of the arrow 32 in order to prevent the etching of the to avoid already deposited copper, or to remove the deposited copper.
  • the holder 30 with the circuit board 2 is inserted into the rinsing chamber 12 through the slot 27.
  • a circulation pump 29 makes its pressure line 35 and nozzles 9 for a turbulent flow of the S p ül mattersers.
  • the backflow of the rinsing liquid takes place through the two chambers 11 with their unpressurized returns 36 to the pump 29.
  • ion exchange cassettes 37 can be used, through which the returning rinsing liquid flows.
  • the rinsing liquid enters the ion exchange cassette 37 at the top into the inlet opening 38, flows through the ion exchange material 39 and passes through the outlet 33 to the return 36 of the pump 29.
  • the ion exchanger cassettes 37 can easily be removed from the chambers 11, to regenerate the ion exchange material 39 after saturation of the material.
  • An environmentally friendly, closed circuit is also implemented during rinsing, in which no harmful wastewater can escape to the outside.
  • Figure 1 also shows how easy it is to accommodate all the necessary components of such an etching system in a common container (40), which is closed by a lid 29.
  • the control cabinet 21 can also be located in the same container 40 be arranged, which contains all the electrical components, such as the two timers 28 for the temporary activation of the circulation pump 1 and the circulation pump 29.
  • the control cabinet 21 also contains corresponding transformers and rectifiers to supply the electrolysis cell with current.
  • Anode 8 is connected to plus and cathode 31 to minus.
  • a sensor 18 In order not to let the deposition of the copper from the electrolyte or the etching solution drop below a lower limit value, a sensor 18 automatically checks the density of the electrolyte.
  • the sensor 18 is designed as a float, which actuates the contact 19 directly via a linkage, which expediently e.g. is designed as a magnetic switch.
  • the contact 19 opens and interrupts the power supply to the electrolysis cell.
  • the suction opening of the tube 34 through which the electrolyte flows back to the pump 1, is not arranged in the bottom but above it. This creates a calming zone 22 around the tube 34, which also helps to calm the electrolyte flow through the electrolytic cell through the openings 7.
  • FIG. 3 shows the state of the rinsing chamber 12 when the pump 29 is switched on.
  • the level rises to the overflow level 42 and the rinsing liquid flows into the inlet openings 38 of the ion exchanger cassettes 37.
  • the pressure in the return line 36 causes the water in the chambers 11, e.g. sink to the return level 43. This results in a pressure difference from the height of the inlet 38 to the return level 43, which determines the flow through the ion exchanger cassettes.
  • the partition walls 41 prevent liquid balance between the overflow level 42 and the level 43 in the chambers 11.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • ing And Chemical Polishing (AREA)
  • Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)
EP84114317A 1983-12-13 1984-11-27 Procédé de décapage protégeant l'environnement pour circuits imprimés et appareil pour exécuter le procédé Expired - Lifetime EP0146798B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT84114317T ATE51648T1 (de) 1983-12-13 1984-11-27 Verfahren zum umweltfreundlichen aetzen von leiterplatten und vorrichtung zur ausuebung des arbeitsverfahrens.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3345050 1983-12-13
DE19833345050 DE3345050A1 (de) 1983-12-13 1983-12-13 Verfahren zum umweltfreundlichen aetzen von leiterplatten und vorrichtung zur ausuebung des arbeitsverfahrens

Publications (3)

Publication Number Publication Date
EP0146798A2 true EP0146798A2 (fr) 1985-07-03
EP0146798A3 EP0146798A3 (en) 1986-05-21
EP0146798B1 EP0146798B1 (fr) 1990-04-04

Family

ID=6216822

Family Applications (1)

Application Number Title Priority Date Filing Date
EP84114317A Expired - Lifetime EP0146798B1 (fr) 1983-12-13 1984-11-27 Procédé de décapage protégeant l'environnement pour circuits imprimés et appareil pour exécuter le procédé

Country Status (7)

Country Link
US (1) US4595451A (fr)
EP (1) EP0146798B1 (fr)
JP (1) JPS61143583A (fr)
AT (1) ATE51648T1 (fr)
AU (1) AU573770B2 (fr)
CA (1) CA1227111A (fr)
DE (2) DE3345050A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990005797A1 (fr) * 1988-11-24 1990-05-31 Hans Höllmüller Maschinenbau GmbH & Co. Installation de decapage d'objets
WO1991011544A1 (fr) * 1990-01-30 1991-08-08 Uzhgorodsky Gosudarstvenny Universitet Procede et dispositif de regeneration de solution de chlorure de fer pour le decapage de cuivre

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4402788A1 (de) * 1994-01-31 1995-08-10 Emil Krechen Industrievertretu Verfahren zum Abtragen von Metallen
US5833816A (en) * 1994-05-11 1998-11-10 Siemens S.A. Apparatus for treating printed circuit boards
US5486282A (en) * 1994-11-30 1996-01-23 Ibm Corporation Electroetching process for seed layer removal in electrochemical fabrication of wafers
GB2316366A (en) * 1996-08-16 1998-02-25 Rolls Royce Plc Apparatus for chemically machining or etching metal components uses acid jets for agitation
US6372081B1 (en) 1999-01-05 2002-04-16 International Business Machines Corporation Process to prevent copper contamination of semiconductor fabs
US6348159B1 (en) 1999-02-15 2002-02-19 First Solar, Llc Method and apparatus for etching coated substrates
US6332973B1 (en) * 2000-01-25 2001-12-25 Advanced Micro Devices, Inc. CMOS chemical bath purification
US7597815B2 (en) * 2003-05-29 2009-10-06 Dressel Pte. Ltd. Process for producing a porous track membrane
DE102005015758A1 (de) * 2004-12-08 2006-06-14 Astec Halbleitertechnologie Gmbh Verfahren und Vorrichtung zum Ätzen von in einer Ätzlösung aufgenommenen Substraten

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5569267A (en) * 1978-11-13 1980-05-24 Yamatoya Shokai:Kk Automatic etching machine
GB2103154A (en) * 1981-05-11 1983-02-16 Airvision Engineering Ltd Liquid treatment of articles
EP0122963A1 (fr) * 1983-04-13 1984-10-31 Forschungszentrum Jülich Gmbh Appareil pour régénérer une solution ammoniacale de décapage

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2008766B2 (de) * 1970-02-23 1971-07-29 Licentia Patent Verwaltungs GmbH, 6000 Frankfurt Verfahren zum regenerieren einer kupferhaltigen aetzloesung insbesondere fuer die herstellung von gedruckten schaltungen
AT313671B (de) * 1971-03-08 1974-02-25 Hoellmueller Maschbau H Verfahren zum Regenerieren von Ätzlösungen für Kupfer und Kupferlegierungen, Regenerationsanlage zur Durchführung dieses Verfahrens sowie Meß- und Steuereinrichtung für diese Regenerationsanlage
JPS4829977A (fr) * 1971-08-20 1973-04-20
DE2241462A1 (de) * 1972-08-23 1974-03-07 Bach & Co Verfahren zum rueckgewinnen einer kupfer(ii)-chlorid enthaltenden aetzloesung
US3880409A (en) * 1973-04-18 1975-04-29 In Line Technology Inc Solution agitation apparatus
JPS5916984B2 (ja) * 1974-09-17 1984-04-18 アイシン精機株式会社 車両用制動油圧制御装置
US4073708A (en) * 1976-06-18 1978-02-14 The Boeing Company Apparatus and method for regeneration of chromosulfuric acid etchants
JPS556711A (en) * 1978-06-29 1980-01-18 Hitachi Cable Method of manufacturing flat cable
US4302273A (en) * 1980-06-04 1981-11-24 Rca Corporation Etching tank in which the solution circulates by convection
US4482425A (en) * 1983-06-27 1984-11-13 Psi Star, Inc. Liquid etching reactor and method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5569267A (en) * 1978-11-13 1980-05-24 Yamatoya Shokai:Kk Automatic etching machine
GB2103154A (en) * 1981-05-11 1983-02-16 Airvision Engineering Ltd Liquid treatment of articles
EP0122963A1 (fr) * 1983-04-13 1984-10-31 Forschungszentrum Jülich Gmbh Appareil pour régénérer une solution ammoniacale de décapage

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENTS ABSTRACTS OF JAPAN, Band 4, Nr.106, (C-20) (588), 30. Juli 1980 & JP-A-55 069 267 (YAMATOYA SHIYOUKAI K.K.) 24-05-1980 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990005797A1 (fr) * 1988-11-24 1990-05-31 Hans Höllmüller Maschinenbau GmbH & Co. Installation de decapage d'objets
US5035765A (en) * 1988-11-24 1991-07-30 Hans Hollmuller Maschinenbau Gmbh & Co Installation for etching objects
WO1991011544A1 (fr) * 1990-01-30 1991-08-08 Uzhgorodsky Gosudarstvenny Universitet Procede et dispositif de regeneration de solution de chlorure de fer pour le decapage de cuivre

Also Published As

Publication number Publication date
CA1227111A (fr) 1987-09-22
US4595451A (en) 1986-06-17
DE3481848D1 (de) 1990-05-10
JPH0573831B2 (fr) 1993-10-15
AU3664584A (en) 1985-06-20
ATE51648T1 (de) 1990-04-15
EP0146798B1 (fr) 1990-04-04
DE3345050C2 (fr) 1993-01-21
DE3345050A1 (de) 1985-06-20
JPS61143583A (ja) 1986-07-01
AU573770B2 (en) 1988-06-23
EP0146798A3 (en) 1986-05-21

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