EP0141905A1 - Process for the electrochemical compensation of the oxidation in the electrochemical regeneration of copper etching solutions containing chloride - Google Patents
Process for the electrochemical compensation of the oxidation in the electrochemical regeneration of copper etching solutions containing chloride Download PDFInfo
- Publication number
- EP0141905A1 EP0141905A1 EP84108467A EP84108467A EP0141905A1 EP 0141905 A1 EP0141905 A1 EP 0141905A1 EP 84108467 A EP84108467 A EP 84108467A EP 84108467 A EP84108467 A EP 84108467A EP 0141905 A1 EP0141905 A1 EP 0141905A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- anode
- copper
- electrochemical
- chloride
- regeneration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 14
- 230000008929 regeneration Effects 0.000 title claims abstract description 13
- 238000011069 regeneration method Methods 0.000 title claims abstract description 13
- 239000010949 copper Substances 0.000 title claims abstract description 11
- 230000003647 oxidation Effects 0.000 title claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 title abstract description 6
- -1 hydrogen ions Chemical class 0.000 claims abstract description 13
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims abstract description 8
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000460 chlorine Substances 0.000 claims abstract description 7
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 7
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 229910021592 Copper(II) chloride Inorganic materials 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000011148 porous material Substances 0.000 claims abstract 5
- 239000004743 Polypropylene Substances 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010405 anode material Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 125000001309 chloro group Chemical group Cl* 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000007921 spray Substances 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 238000007086 side reaction Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229910002476 CuII Inorganic materials 0.000 description 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 1
- 229910002553 FeIII Inorganic materials 0.000 description 1
- 229910021577 Iron(II) chloride Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- WGKMWBIFNQLOKM-UHFFFAOYSA-N [O].[Cl] Chemical compound [O].[Cl] WGKMWBIFNQLOKM-UHFFFAOYSA-N 0.000 description 1
- 229910001514 alkali metal chloride Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
Definitions
- the invention is based on a method according to the preamble of the main claim.
- etching solutions for metals that contain copper (II) chloride or iron (III) chloride the copper (I) chloride or iron (II) chloride formed during the etching becomes partly due to the oxygen in the air CuII or FeIII. Oxidizes according to the reaction equation
- the intermediate copper (II) oxide reacts according to (2) with the consumption of additional hydrochloric acid
- This side reaction is noticeable by a pH increase in copper etching solutions containing chloride.
- the air oxidation of CuCl is particularly noticeable when the etching solution is used for spray etching, since the surface of the solution exposed to the air is particularly large.
- Such etching solutions such as CuC1 2 hydrochloric acid or CuCl 2 alkali chloride can be regenerated electrochemically according to the chemical equations (3), (4), (5) using appropriate electrolysis devices:
- circuit boards were prepared by the spray - etching process etched by the etching solution was sprayed with a pressure of 2.5 bar to the printed circuit boards.
- the etching solution had a volume of 660 1, contained 150 g / 1 KC1 and 50 g / 1 Cu and had a temperature of 50 ° C.
- This solution was pumped from the etching system into a regeneration system as described in DE-OS 33 03 594.
- Two cells were connected in series and the anodes consisted of titanium rods 8 mm in diameter with an iridium oxide coating. The anode surface area was 14.3 dm 2 per cell.
- the anode material was wrapped with a filter cloth made of polypropylene in the form of 8 mm wide strips in such a way that the strips abut each other in order to obtain gaps in the casing so that the gases released at the anode were oxygen and Chlorine can escape.
- a current of 550 A at a voltage of 19.5 V flowed in the regeneration cells connected in series.
- the electrochemical process was controlled by detecting the copper (I) ions with the help of the redox potential and switching off the current at a value of 375 mV. If the regeneration system was operated without etching printed circuit boards, the pH value fell from 2.5 initially to approximately 1.9 after approximately 1 1/2 hours.
- the current yield for the reaction according to equation (6) is dependent on the current density with which the regeneration system is operated and for example at 30 A / dm 2 at 20%, at 50 A / dm 2 at 45% and at 90 A / dm 2 is finally 60%.
- the choice of the anodic current density is therefore a possibility, the amount of hydrogen ions formed to the amount of Cu (I) ions oxidized by the air. to adapt, for example, by controlling the anodic current density so that the pH is kept constant at, for example, 2.0.
- Other ways of matching the amount of H formed to the amount of Cu (I) ions oxidized by the air lies in the type of anode coating by changing the porosity or varying the number and type of gas gaps.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
Die Erfindung geht aus von einem Verfahren nach der Gattung des Hauptanspruchs. In Ätzlösungen für Metalle, die Kupfer (II)-chlorid oder Eisen(III)-chlorid enthalten, wird das beim Ätzen entstehende Kupfer(I)-chlorid bzw. Eisen(II)-chlorid zu einem Teil durch den Sauerstoff der Luft wieder zum CuII oder FeIII.oxidiert gemäß der Reaktionsgleichung
Diese Nebenreaktion macht sich durch einen pH-Anstieg bei chloridhaltigen Kupferätzlösungen bemerkbar. Die Luftoxidation von CuCl tritt ganz besonders in Erscheinung, wenn die Ätzlösung zum Sprühätzen eingesetzt wird, da dann die der Luft ausgesetzte Lösungsoberfläche besonders groß ist.This side reaction is noticeable by a pH increase in copper etching solutions containing chloride. The air oxidation of CuCl is particularly noticeable when the etching solution is used for spray etching, since the surface of the solution exposed to the air is particularly large.
Derartige Ätzlösungen wie beispielsweise CuC12-Salzsäure oder CuCl2-Alkalichlorid, lassen sich durch entsprechende Elektrolyseeinrichtungen elektrochemisch nach den chemischer Gleichungen (3), (4), (5) regenerieren:
Ein derartiges, mit Alkalichloriden arbeitendes Verfahren sowie eine Vorrichtung zur Regenerierung einer kupferhaltigen Ätzlösung ist in der DE-OS 33 03 594 beschrieben. Bei konventionellen Elektrodenanordnungen, wie sie auch in der soeben genannten DE-OS vorgesehen sind, erfolgt die anodische Teilreaktion (4) in chloridhaltigen Lösungen in der Regel mit 100 % Chlorausbeute. In der Praxis stehen diesen 100 % Chlorausbeute jedoch verschiedene störende Nebenreaktionen gegenüber, nämlich zum einen eine kathodische Reduktion von Wasserstoffionen und zum anderen die oben bereits erwähnten Reaktionen (1) und (2). Diese Nebenreaktionen machen sich auch bei der elektrochemischen Regenerierung von Kupferätzlösungen infolge des Verbrauchs an HCl durch eine Erhöhung des pH-Wertes sowie durch eine unerwünschte Chlorgasentwicklung bemerkbar.Such a method, which works with alkali chlorides, and a device for regenerating a copper-containing etching solution is described in DE-OS 33 03 594. In conventional electrode arrangements, as are also provided in the DE-OS just mentioned, the anodic partial reaction (4) in chloride-containing solutions generally takes place with a 100% chlorine yield. In practice, however, this 100% chlorine yield is contrasted by various interfering side reactions, namely on the one hand a cathodic reduction of hydrogen ions and on the other hand the reactions (1) and (2) already mentioned above. These side reactions are also noticeable in the electrochemical regeneration of copper etching solutions due to the consumption of HCl by an increase in the pH value and by an undesirable development of chlorine gas.
Das erfindungsgemäße Verfahren mit den kennzeichnenden Merkmalen des Hauptanspruchs hat demgegenüber den Vorteil, daß an der Anode neben der normalerweise bevorzugten Chloridoxidation auch eine elektrochemische Zerlegung von Wasser in gasförmigen Sauerstoff und Wasserstoffionen gemäß der Reaktionsgleichung
realisiert werden kann. Der bei dieser Reaktion entstehende Sauerstoff entweicht im wesentlichen gasförmig aus der Ätzlösung, da die Löslichkeit für Sauerstoff im Gegensatz zu derjenigen für Chlor nur sehr gering ist. In der Lösung verbleiben die Wasserstoffionen, die in der gewünschten Weise dafür sorgen, daß der pH-Wert im wesentlichen konstant bleibt und somit die insbesondere beim Sprühätzen auftretende Luftoxidation von CuCl kompensiert wird.can be realized. The result of this reaction Oxygen escapes from the etching solution essentially in gaseous form, since the solubility for oxygen, in contrast to that for chlorine, is very low. The hydrogen ions remain in the solution, which, in the desired manner, ensure that the pH remains essentially constant and thus compensate for the air oxidation of CuCl, which occurs particularly during spray etching.
Durch die in den Unteransprüchen aufgeführten Maßnahmen sind vorteilhafte Weiterbildungen und Verbesserungen des im Hauptanspruch angegebenen Verfahrens möglich. Besonders vorteilhaft ist die Verwendung von Polypropylen-Filtertuch-Material, das in Streifen geschnitten und auf Stoß um die Anode herumgewickelt wird, um auf diese Weise Spalte oder Öffnungen in der Umhüllung zu belassen, damit das Sauerstoff-Chlor-Gemisch von der Anode entweichen kann.Advantageous further developments and improvements of the method specified in the main claim are possible through the measures listed in the subclaims. It is particularly advantageous to use polypropylene filter cloth material which is cut into strips and wrapped around the anode in a butt joint so as to leave gaps or openings in the casing so that the oxygen-chlorine mixture can escape from the anode .
In einer Ätzanlage wurden Leiterplatten nach dem Sprüh- ätzverfahren geätzt, indem die Ätzlösung mit einem Druck von 2,5 bar auf die Leiterplatten gesprüht wurde. Die Ätzlösung hatte ein Volumen von 660 1, enthielt 150 g/1 KC1 und 50 g/1 Cu und hatte eine Temperatur von 50°C. Diese Lösung wurde von der Ätzanlage in eine Regenerieranlage gepumpt, wie sie in der DE-OS 33 03 594 beschrieben ist. Dabei waren zwei Zellen hintereinander geschaltet und die Anoden bestanden aus Titanstäben von 8 mm Durchmesser mit einer Iridiumoxidbeschichtung. Die Anodenoberfläche betrug pro Zelle 14,3 dm2. Das Anodenmaterial war mit einem Filtertuch aus Polypropylen in Form von 8 mm breiten Streifen umwickelt derart, daß die Streifen aneinander stoßen, um Spalte in der Umhüllung zu erhalten, damit die an der Anode freigesetzten Gase Sauerstoff und Chlor entweichen können. In den hintereinander geschalteten Regenierzellen floß ein Strom von 550 A bei einer Spannung von 19,5 V. Um zu verhindern, daß mehr Chlor gebildet als für die Oxidation benötigt wird, erfolgte eine Steuerung des elektrochemischen Vorgangs durch Erfassen der Kupfer (I)-Ionen mit Hilfe des Redoxpotentials und Abschaltung des Stroms bei einem Wert von 375 mV. Wurde die Regenerieranlage gefahren, ohne daß Leiterplatten geätzt wurden, so fiel der pH-Wert von anfänglich 2,5 auf etwa 1,9 nach etwa 1 1/2 Stunden. Wurde dagegen sprühgeätzt, ohne daß die Regenerieranlage eingeschaltet war - und dies entspricht auch etwa den Verhältnissen bei eingeschalteter Regenerieranlage, aber ohne die Umhüllung der Anoden -, so stieg der pH-Wert im Verlauf von etwa 20 Minuten von 1,9 auf 2,5. Wurde dagegen sprühgeätzt und gleichzeitig regeneriert, so blieb der pH-Wert konstant auf 2,0, was bedeutet, daß unter diesen Umständen die vorzugsweise beim Sprühätzen auftretende Luftoxidation von Cu(I) kompensiert war.In an etching system circuit boards were prepared by the spray - etching process etched by the etching solution was sprayed with a pressure of 2.5 bar to the printed circuit boards. The etching solution had a volume of 660 1, contained 150 g / 1 KC1 and 50 g / 1 Cu and had a temperature of 50 ° C. This solution was pumped from the etching system into a regeneration system as described in DE-OS 33 03 594. Two cells were connected in series and the anodes consisted of titanium rods 8 mm in diameter with an iridium oxide coating. The anode surface area was 14.3 dm 2 per cell. The anode material was wrapped with a filter cloth made of polypropylene in the form of 8 mm wide strips in such a way that the strips abut each other in order to obtain gaps in the casing so that the gases released at the anode were oxygen and Chlorine can escape. A current of 550 A at a voltage of 19.5 V flowed in the regeneration cells connected in series. To prevent more chlorine from being formed than is required for the oxidation, the electrochemical process was controlled by detecting the copper (I) ions with the help of the redox potential and switching off the current at a value of 375 mV. If the regeneration system was operated without etching printed circuit boards, the pH value fell from 2.5 initially to approximately 1.9 after approximately 1 1/2 hours. If, on the other hand, spray-etching was carried out without the regeneration system being switched on - and this also roughly corresponds to the conditions when the regeneration system is switched on but without the anodes being coated - the pH rose from 1.9 to 2.5 over the course of about 20 minutes . If, on the other hand, spray etching and regeneration were carried out at the same time, the pH remained constant at 2.0, which means that under these circumstances the air oxidation of Cu (I), which occurs preferably during spray etching, was compensated.
Versuche haben gezeigt, daß die Stromausbeute für die Reaktion nach Gleichung (6) abhängig ist von der Stromdichte, mit der die Regenerieranlage gefahren wird und beispielsweise bei 30 A/dm2 bei 20 %, bei 50 A/dm2 bei 45 % und bei 90 A/dm2 schließlich bei 60 % liegt. Die Wahl der anodischen Stromdichte ist daher eine Möglichkeit, die Menge der gebildeten Wasserstoffionen an die Menge der durch die Luft oxidierten Cu(I)-Ionen. anzupassen, indem man beispielsweise die anodische Stromdichte so steuert, daß der pH-Wert konstant auf beispielsweise 2,0 gehalten wird. Andere Möglichkeiten der Abstimmung der gebildeten H -Menge auf die durch die Luft oxidierte Cu(I)-Ionen-Menge liegt in-der Art der Anodenumhüllung, indem man hier die Porösität ändert oder die Anzahl und die Art der Gasspalten variiert.Experiments have shown that the current yield for the reaction according to equation (6) is dependent on the current density with which the regeneration system is operated and for example at 30 A / dm 2 at 20%, at 50 A / dm 2 at 45% and at 90 A / dm 2 is finally 60%. The choice of the anodic current density is therefore a possibility, the amount of hydrogen ions formed to the amount of Cu (I) ions oxidized by the air. to adapt, for example, by controlling the anodic current density so that the pH is kept constant at, for example, 2.0. Other ways of matching the amount of H formed to the amount of Cu (I) ions oxidized by the air lies in the type of anode coating by changing the porosity or varying the number and type of gas gaps.
Es sei noch betont, daß diese Art der Kompensation der Luftoxidation sich nicht nur bei Ätzlösungen, die als Komplexbildner Alkalichloride enthalten, verwirklichen läßt, sondern daß dies genauso gut möglich ist bei Ätzlösungen, die als Komplexbildner Salzsäure enthalten. Ebenso ist sie anwendbar auf Lösungen, die statt Kupferchlorid, CuCl2, Eisenchlorid, FeCl3, enthalten.It should also be emphasized that this type of compensation for air oxidation can be achieved not only in the case of etching solutions which contain alkali metal chlorides as complexing agents, but that this is just as possible in the case of etching solutions which contain hydrochloric acid as complexing agents. It is also applicable to solutions that contain copper chloride, CuCl 2 , iron chloride, FeCl 3 instead.
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3330349 | 1983-08-23 | ||
DE3330349A DE3330349A1 (en) | 1983-08-23 | 1983-08-23 | PROCESS FOR ELECTROCHEMICAL COMPENSATION OF AIR OXIDATION DURING THE ELECTROCHEMICAL REGENERATION OF CHLORIDE-CONTAINING COPPER ETCH SOLUTIONS |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0141905A1 true EP0141905A1 (en) | 1985-05-22 |
EP0141905B1 EP0141905B1 (en) | 1986-10-08 |
Family
ID=6207205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP84108467A Expired EP0141905B1 (en) | 1983-08-23 | 1984-07-18 | Process for the electrochemical compensation of the oxidation in the electrochemical regeneration of copper etching solutions containing chloride |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0141905B1 (en) |
DE (2) | DE3330349A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991014800A1 (en) * | 1990-03-29 | 1991-10-03 | Hans Höllmüller Maschinenbau GmbH & Co. | Device for the electrolytic regeneration of an etching agent containing chloride and metallic ions |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0539792B1 (en) * | 1991-10-28 | 1997-04-16 | Nittetsu Mining Co., Ltd. | Method for regenerating etchant |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2008766B2 (en) * | 1970-02-23 | 1971-07-29 | Licentia Patent Verwaltungs GmbH, 6000 Frankfurt | Regenerating cupric chloride etching - solution enriched with cuprous chloride |
DE2241462A1 (en) * | 1972-08-23 | 1974-03-07 | Bach & Co | Cupric chloride-contg etching soln regeneration - by oxidising cuprous chloride and recovery of hydrogen chloride and oxygen using part of cupric chloride |
DE2641905A1 (en) * | 1976-09-17 | 1978-03-23 | Kutscherenko | Electrolytic regeneration of spent etchant - contg. iron and copper chloride(s), esp. from printed circuit boards mfr. to avoid pollution and increase etching power |
DE2650912A1 (en) * | 1976-11-06 | 1978-05-18 | Hoellmueller Maschbau H | Electrolytic regeneration of copper etching reagent - contg. chloride and cuprous ion, with control of copper concn. in reagent and current density |
EP0011799A1 (en) * | 1978-11-22 | 1980-06-11 | Forschungszentrum Jülich Gmbh | Process and apparatus for regenerating an etching solution containing cupric and/or ferric chloride in an electrolytic cell |
-
1983
- 1983-08-23 DE DE3330349A patent/DE3330349A1/en not_active Withdrawn
-
1984
- 1984-07-18 EP EP84108467A patent/EP0141905B1/en not_active Expired
- 1984-07-18 DE DE8484108467T patent/DE3460905D1/en not_active Expired
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2008766B2 (en) * | 1970-02-23 | 1971-07-29 | Licentia Patent Verwaltungs GmbH, 6000 Frankfurt | Regenerating cupric chloride etching - solution enriched with cuprous chloride |
DE2241462A1 (en) * | 1972-08-23 | 1974-03-07 | Bach & Co | Cupric chloride-contg etching soln regeneration - by oxidising cuprous chloride and recovery of hydrogen chloride and oxygen using part of cupric chloride |
DE2641905A1 (en) * | 1976-09-17 | 1978-03-23 | Kutscherenko | Electrolytic regeneration of spent etchant - contg. iron and copper chloride(s), esp. from printed circuit boards mfr. to avoid pollution and increase etching power |
DE2650912A1 (en) * | 1976-11-06 | 1978-05-18 | Hoellmueller Maschbau H | Electrolytic regeneration of copper etching reagent - contg. chloride and cuprous ion, with control of copper concn. in reagent and current density |
EP0011799A1 (en) * | 1978-11-22 | 1980-06-11 | Forschungszentrum Jülich Gmbh | Process and apparatus for regenerating an etching solution containing cupric and/or ferric chloride in an electrolytic cell |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991014800A1 (en) * | 1990-03-29 | 1991-10-03 | Hans Höllmüller Maschinenbau GmbH & Co. | Device for the electrolytic regeneration of an etching agent containing chloride and metallic ions |
Also Published As
Publication number | Publication date |
---|---|
EP0141905B1 (en) | 1986-10-08 |
DE3330349A1 (en) | 1985-03-14 |
DE3460905D1 (en) | 1986-11-13 |
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